Chinese (simplified)/English

技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FF300R12KT3P_E
62mmC-Series模块采用第三代沟槽栅/场终止IGBT和HE型发射机控制二极管
62mmC-SeriesmodulewithTrench/FieldstopIGBT3andEmitterControlledHEdiode
初步数据/PreliminaryData
VCES = 1200V
IC nom = 300A / ICRM = 600A
典型应用
• 大功率变流器
• 电机传动
• UPS系统
• 风力发电机
TypicalApplications
• Highpowerconverters
• Motordrives
• UPSsystems
• Windturbines
电气特性
• 低开关损耗
• 无与伦比的坚固性
• VCEsat带正温度系数
ElectricalFeatures
• Lowswitchinglosses
• Unbeatablerobustness
• VCEsatwithpositivetemperaturecoefficient
机械特性
• 封装的CTI>400
• 高爬电距离和电气间隙
• 高功率密度
• 绝缘的基板
• 标准封装
• 预涂导热介质
MechanicalFeatures
• PackagewithCTI>400
• Highcreepageandclearancedistances
• Highpowerdensity
• Isolatedbaseplate
• Standardhousing
• Pre-appliedThermalInterfaceMaterial
ModuleLabelCode
BarcodeCode128
DMX-Code
preparedby:AKB
dateofpublication:2016-04-25
approvedby:MK
revision:V2.1
1
ContentoftheCode
Digit
ModuleSerialNumber
ModuleMaterialNumber
ProductionOrderNumber
Datecode(ProductionYear)
Datecode(ProductionWeek)
1-5
6-11
12-19
20-21
22-23
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FF300R12KT3P_E
初步数据
PreliminaryData
IGBT,逆变器/IGBT,Inverter
最大额定值/MaximumRatedValues
集电极-发射极电压
Collector-emittervoltage
Tvj = 25°C
VCES
1200
V
连续集电极直流电流
ContinuousDCcollectorcurrent
TH = 65°C, Tvj max = 150°C
IC nom 300
A
集电极重复峰值电流
Repetitivepeakcollectorcurrent
tP = 1 ms
ICRM
600
A
VGES
+/-20
V
栅极-发射极峰值电压
Gate-emitterpeakvoltage
特征值/CharacteristicValues
min.
typ.
max.
1,70
1,90
2,15
V
V
5,80
6,50
V
集电极-发射极饱和电压
Collector-emittersaturationvoltage
IC = 300 A, VGE = 15 V
IC = 300 A, VGE = 15 V
栅极阈值电压
Gatethresholdvoltage
IC = 12,0 mA, VCE = VGE, Tvj = 25°C
栅极电荷
Gatecharge
VGE = -15 V ... +15 V
QG
2,80
µC
内部栅极电阻
Internalgateresistor
Tvj = 25°C
RGint
2,5
Ω
输入电容
Inputcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cies
21,0
nF
反向传输电容
Reversetransfercapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cres
0,85
nF
集电极-发射极截止电流
Collector-emittercut-offcurrent
VCE = 1200 V, VGE = 0 V, Tvj = 25°C
ICES
5,0
mA
栅极-发射极漏电流
Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
IGES
400
nA
Tvj = 25°C
Tvj = 125°C
VCE sat
VGEth
5,00
开通延迟时间(电感负载)
Turn-ondelaytime,inductiveload
IC = 300 A, VCE = 600 V
VGE = ±15 V
RGon = 2,4 Ω
Tvj = 25°C
Tvj = 125°C
td on
0,16
0,17
µs
µs
上升时间(电感负载)
Risetime,inductiveload
IC = 300 A, VCE = 600 V
VGE = ±15 V
RGon = 2,4 Ω
Tvj = 25°C
Tvj = 125°C
tr
0,04
0,045
µs
µs
关断延迟时间(电感负载)
Turn-offdelaytime,inductiveload
IC = 300 A, VCE = 600 V
VGE = ±15 V
RGoff = 2,4 Ω
Tvj = 25°C
Tvj = 125°C
td off
0,45
0,52
µs
µs
下降时间(电感负载)
Falltime,inductiveload
IC = 300 A, VCE = 600 V
VGE = ±15 V
RGoff = 2,4 Ω
Tvj = 25°C
Tvj = 125°C
tf
0,10
0,16
µs
µs
开通损耗能量(每脉冲)
Turn-onenergylossperpulse
IC = 300 A, VCE = 600 V, LS = 30 nH
VGE = ±15 V, di/dt = 6000 A/µs
RGon = 2,4 Ω
Tvj = 25°C
Tvj = 125°C
Eon
16,5
25,0
mJ
mJ
关断损耗能量(每脉冲)
Turn-offenergylossperpulse
IC = 300 A, VCE = 600 V, LS = 30 nH
VGE = ±15 V, du/dt = 4500 V/µs
RGoff = 2,4 Ω
Tvj = 25°C
Tvj = 125°C
Eoff
24,5
37,0
mJ
mJ
短路数据
SCdata
VGE ≤ 15 V, VCC = 900 V
VCEmax = VCES -LsCE ·di/dt
1200
A
???
Thermalresistance,junctiontoheatsink
每个IGBT/perIGBT
validwithIFXpre-appliedthermalinterfacematerial
在开关状态下温度
Temperatureunderswitchingconditions
tP ≤ 10 µs, Tvj = 125°C
ISC
RthJH
Tvj op
preparedby:AKB
dateofpublication:2016-04-25
approvedby:MK
revision:V2.1
2
0,116 K/W
-40
125
°C
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FF300R12KT3P_E
初步数据
PreliminaryData
二极管,逆变器/Diode,Inverter
最大额定值/MaximumRatedValues
反向重复峰值电压
Repetitivepeakreversevoltage
Tvj = 25°C
连续正向直流电流
ContinuousDCforwardcurrent
正向重复峰值电流
Repetitivepeakforwardcurrent
tP = 1 ms
I2t-值
I²t-value
VR = 0 V, tP = 10 ms, Tvj = 125°C
VRRM 1200
V
IF
300
A
IFRM
600
A
I²t
19000
A²s
特征值/CharacteristicValues
min.
typ.
max.
1,65
1,65
2,15
正向电压
Forwardvoltage
IF = 300 A, VGE = 0 V
IF = 300 A, VGE = 0 V
Tvj = 25°C
Tvj = 125°C
VF
反向恢复峰值电流
Peakreverserecoverycurrent
IF = 300 A, - diF/dt = 6000 A/µs (Tvj=125°C) Tvj = 25°C
VR = 600 V
Tvj = 125°C
VGE = -15 V
IRM
210
270
A
A
恢复电荷
Recoveredcharge
IF = 300 A, - diF/dt = 6000 A/µs (Tvj=125°C) Tvj = 25°C
VR = 600 V
Tvj = 125°C
VGE = -15 V
Qr
30,0
56,0
µC
µC
反向恢复损耗(每脉冲)
Reverserecoveryenergy
IF = 300 A, - diF/dt = 6000 A/µs (Tvj=125°C) Tvj = 25°C
VR = 600 V
Tvj = 125°C
VGE = -15 V
Erec
14,0
26,0
mJ
mJ
???
Thermalresistance,junctiontoheatsink
每个二极管/perdiode
validwithIFXpre-appliedthermalinterfacematerial
RthJH
在开关状态下温度
Temperatureunderswitchingconditions
Tvj op
preparedby:AKB
dateofpublication:2016-04-25
approvedby:MK
revision:V2.1
3
V
V
0,183 K/W
-40
125
°C
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FF300R12KT3P_E
初步数据
PreliminaryData
模块/Module
绝缘测试电压
Isolationtestvoltage
RMS, f = 50 Hz, t = 1 min.
VISOL 2,5
kV
Cu
模块基板材料
Materialofmodulebaseplate
内部绝缘
Internalisolation
基本绝缘(class1,IEC61140)
basicinsulation(class1,IEC61140)
Al2O3
爬电距离
Creepagedistance
端子至散热器/terminaltoheatsink
端子至端子/terminaltoterminal
29,0
23,0
mm
电气间隙
Clearance
端子至散热器/terminaltoheatsink
端子至端子/terminaltoterminal
23,0
11,0
mm
> 400
相对电痕指数
Comperativetrackingindex
CTI
min.
杂散电感,模块
Strayinductancemodule
模块引线电阻,端子-芯片
Moduleleadresistance,terminals-chip
TH=25°C,每个开关/perswitch
储存温度
Storagetemperature
20
nH
RCC'+EE'
0,70
mΩ
-40
TBPmax
模块安装的安装扭距
Mountingtorqueformodulmounting
螺丝M6根据相应的应用手册进行安装
ScrewM6-Mountingaccordingtovalidapplicationnote
M
3,00
端子联接扭距
Terminalconnectiontorque
螺丝M6根据相应的应用手册进行安装
ScrewM6-Mountingaccordingtovalidapplicationnote
M
2,5
重量
Weight
G
Lagerung und Transport von Modulen mit TIM => siehe AN2012-07
Storage and shipment of modules with TIM => see AN2012-07
preparedby:AKB
dateofpublication:2016-04-25
approvedby:MK
revision:V2.1
4
max.
LsCE
Tstg
最高基板工作温度
Maximumbaseplateoperationtemperature
typ.
340
125
°C
125
°C
6,00
Nm
5,0
Nm
g
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FF300R12KT3P_E
初步数据
PreliminaryData
输出特性IGBT,逆变器(典型)
outputcharacteristicIGBT,Inverter(typical)
IC=f(VCE)
VGE=15V
输出特性IGBT,逆变器(典型)
outputcharacteristicIGBT,Inverter(typical)
IC=f(VCE)
Tvj=125°C
600
600
500
500
400
400
IC [A]
IC [A]
Tvj = 25°C
Tvj = 125°C
300
300
200
200
100
100
0
0,0
0,5
1,0
1,5
VCE [V]
2,0
2,5
0
3,0
传输特性IGBT,逆变器(典型)
transfercharacteristicIGBT,Inverter(typical)
IC=f(VGE)
VCE=20V
VGE = 19V
VGE = 17V
VGE = 15V
VGE = 13V
VGE = 11V
VGE = 9V
0,0
0,5
1,0
1,5
2,0
2,5 3,0
VCE [V]
3,5
4,0
4,5
5,0
开关损耗IGBT,逆变器(典型)
switchinglossesIGBT,Inverter(typical)
Eon=f(IC),Eoff=f(IC)
VGE=±15V,RGon=2.4Ω,RGoff=2.4Ω,VCE=600V
600
80
Tvj = 25°C
Tvj = 125°C
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
70
500
60
400
E [mJ]
IC [A]
50
300
40
30
200
20
100
10
0
5
6
7
8
9
VGE [V]
10
11
0
12
preparedby:AKB
dateofpublication:2016-04-25
approvedby:MK
revision:V2.1
5
0
100
200
300
IC [A]
400
500
600
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FF300R12KT3P_E
初步数据
PreliminaryData
开关损耗IGBT,逆变器(典型)
switchinglossesIGBT,Inverter(typical)
Eon=f(RG),Eoff=f(RG)
VGE=±15V,IC=300A,VCE=600V
瞬态热阻抗IGBT,逆变器
transientthermalimpedanceIGBT,Inverter
ZthJH=f(t)
150
1
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
135
ZthJH : IGBT
120
105
0,1
ZthJH [K/W]
E [mJ]
90
75
60
0,01
45
30
i:
1
2
3
4
ri[K/W]: 0,0082
0,0459 0,0435 0,0184
τi[s]:
0,000803 0,0333 0,135 1,045
15
0
0
4
8
12
RG [Ω]
16
20
0,001
0,001
24
反偏安全工作区IGBT,逆变器(RBSOA)
reversebiassafeoperatingareaIGBT,Inverter(RBSOA)
IC=f(VCE)
VGE=±15V,RGoff=2.4Ω,Tvj=125°C
0,01
0,1
t [s]
1
10
正向偏压特性二极管,逆变器(典型)
forwardcharacteristicofDiode,Inverter(typical)
IF=f(VF)
700
600
IC, Modul
IC, Chip
Tvj = 25°C
Tvj = 125°C
600
500
500
400
IF [A]
IC [A]
400
300
300
200
200
100
100
0
0
200
400
600
800
VCE [V]
1000
1200
0
1400
preparedby:AKB
dateofpublication:2016-04-25
approvedby:MK
revision:V2.1
6
0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4
VF [V]
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FF300R12KT3P_E
初步数据
PreliminaryData
开关损耗二极管,逆变器(典型)
switchinglossesDiode,Inverter(typical)
Erec=f(IF)
RGon=2.4Ω,VCE=600V
开关损耗二极管,逆变器(典型)
switchinglossesDiode,Inverter(typical)
Erec=f(RG)
IF=300A,VCE=600V
35
32
Erec, Tvj = 125°C
Erec, Tvj = 125°C
28
30
24
25
20
E [mJ]
E [mJ]
20
16
15
12
10
8
5
0
4
0
100
200
300
IF [A]
400
500
0
600
瞬态热阻抗二极管,逆变器
transientthermalimpedanceDiode,Inverter
ZthJH=f(t)
1
ZthJH [K/W]
ZthJH : Diode
0,1
i:
1
2
3
4
ri[K/W]: 0,014
0,0702 0,0722 0,0266
τi[s]:
0,00068 0,0258 0,106 0,825
0,01
0,001
0,01
0,1
t [s]
1
10
preparedby:AKB
dateofpublication:2016-04-25
approvedby:MK
revision:V2.1
7
0
4
8
12
16
RG [Ω]
20
24
28
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FF300R12KT3P_E
初步数据
PreliminaryData
接线图/Circuitdiagram
封装尺寸/Packageoutlines
In fin e o n
preparedby:AKB
dateofpublication:2016-04-25
approvedby:MK
revision:V2.1
8
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
FF300R12KT3P_E
初步数据
PreliminaryData
Publishedby
InfineonTechnologiesAG
81726München,Germany
©InfineonTechnologiesAG2015.
AllRightsReserved.
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preparedby:AKB
dateofpublication:2016-04-25
approvedby:MK
revision:V2.1
9
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