Transistor 2SD1820, 2SD1820A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB1219 and 2SB1219A Unit: mm ■ Features Collector to 2SD1820 30 VCBO 25 VEBO 5 V Peak collector current ICP 1 A Collector current IC 500 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C Symbol 2SD1820 voltage 2SD1820A Collector to emitter 2SD1820 voltage 2SD1820A Emitter to base voltage 1.3±0.1 Marking symbol : W(2SD1820) X(2SD1820A) Conditions min VCBO IC = 10µA, IE = 0 VCEO IC = 2mA, IB = 0 VEBO IE = 10µA, IC = 0 *1 µA V V 5 40 Collector to emitter saturation voltage VCE(sat) Transition frequency Collector output capacitance V 160 340 IC = 300mA, IB = 30mA*2 0.35 0.6 fT VCB = 10V, IE = –50mA*2, f = 200MHz 200 Cob VCB = 10V, IE = 0, f = 1MHz V MHz 6 15 *2 FE1 0.1 50 85 *1h Unit 25 VCE = 10V, IC = 500mA*2 VCE = 10V, IC = max 60 hFE2 hFE1 typ 30 150mA*2 Forward current transfer ratio 0.3–0 0.65 EIAJ:SC–70 S–Mini Type Package VCB = 20V, IE = 0 ICBO Collector to base 1:Base 2:Emitter 3:Collector 0.2±0.1 (Ta=25˚C) Parameter Collector cutoff current 0.65 V 50 Emitter to base voltage ■ Electrical Characteristics +0.1 V 60 VCEO emitter voltage 2SD1820A Unit +0.1 2SD1820A Ratings 0 to 0.1 2SD1820 base voltage 3 0.2 Collector to 1 2 (Ta=25˚C) Symbol 0.425 0.7±0.1 Parameter 1.25±0.1 0.15–0.05 ■ Absolute Maximum Ratings 0.425 2.0±0.2 ● 2.1±0.1 Low collector to emitter saturation voltage VCE(sat). S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 0.9±0.1 ● pF Pulse measurement Rank classification Marking Symbol Rank Q R S hFE1 85 ~ 170 120 ~ 240 170 ~ 340 2SD1820 WQ WR WS 2SD1820A XQ XR XS 1 2SD1820, 2SD1820A Transistor PC — Ta IC — VCE 80 600 500 4mA 400 3mA 300 2mA 200 1mA 100 500 400 300 200 100 0 60 80 100 120 140 160 0 0 4 30 10 3 1 Ta=75˚C 0.3 25˚C –25˚C 0.03 0.3 1 3 30 10 3 25˚C Ta=–25˚C 1 75˚C 0.3 0.1 0.03 0.01 0.01 0.03 10 0.1 fT — IE 0.3 200 160 120 80 40 Collector output capacitance Cob (pF) VCB=10V Ta=25˚C 1 3 Emitter current IE (mA) –100 8 10 250 Ta=75˚C 200 25˚C –25˚C 150 100 50 0 0.01 0.03 0.1 0.3 1 3 10 Collector current IC (A) VCER — RBE 8 6 4 2 0 –30 6 VCE=10V 10 IE=0 f=1MHz Ta=25˚C 10 4 300 Cob — VCB 12 –10 2 Base current IB (mA) Collector current IC (A) 240 –3 0 IC/IB=10 Collector current IC (A) 0 –1 20 hFE — IC 100 Base to emitter saturation voltage VBE(sat) (V) IC/IB=10 0.1 16 VBE(sat) — IC 100 0.01 0.01 0.03 12 Collector to emitter voltage VCE (V) VCE(sat) — IC 0.1 8 Forward current transfer ratio hFE 40 120 Collector to emitter voltage VCER (V) 20 Ambient temperature Ta (˚C) Collector to emitter saturation voltage VCE(sat) (V) 600 40 0 Transition frequency fT (MHz) Collector current IC (mA) 120 VCE=10V Ta=25˚C 700 IB=10mA 9mA 8mA 7mA 6mA 5mA 200 160 800 Ta=25˚C 700 0 2 IC — I B 800 Collector current IC (mA) Collector power dissipation PC (mW) 240 IC=2mA Ta=25˚C 100 80 60 2SD1820A 40 2SD1820 20 0 1 3 10 30 100 Collector to base voltage VCB (V) 1 3 10 30 100 300 1000 Base to emitter resistance RBE (kΩ)