Data Sheet

Freescale Semiconductor
Technical Data
MW4IC915N
Rev. 8, 3/2011
RF LDMOS Wideband Integrated
Power Amplifiers
The MW4IC915NB/GNB wideband integrated circuit is designed for GSM
and GSM EDGE base station applications. It uses Freescale’s newest High
Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi--stage
structure. Its wideband On--Chip design makes it usable from 750 to 1000 MHz.
The linearity performances cover all modulations for cellular applications: GSM,
GSM EDGE, TDMA, N--CDMA and W--CDMA.
Final Application
• Typical Performance: VDD = 26 Volts, IDQ1 = 60 mA, IDQ2 = 240 mA,
Pout = 15 Watts CW, Full Frequency Band (860--960 MHz)
Power Gain — 30 dB
Power Added Efficiency — 44%
Driver Application
• Typical GSM/GSM EDGE Performances: VDD = 26 Volts, IDQ1 = 60 mA,
IDQ2 = 240 mA, Pout = 3 Watts Avg., Full Frequency Band (869--894 MHz
and 921--960 MHz)
Power Gain — 31 dB
Power Added Efficiency — 19%
Spectral Regrowth @ 400 kHz Offset = --65 dBc
Spectral Regrowth @ 600 kHz Offset = --83 dBc
EVM — 1.5%
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 15 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• On--Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output)
• Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function
• On--Chip Current Mirror gm Reference FET for Self Biasing Application(1)
• Integrated ESD Protection
• 200°C Capable Plastic Package
• N Suffix Indicates Lead--Free Terminations. RoHS Compliant.
• In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel.
VRD2
VRG2
VDS1
RFin
VDS2/RFout
VRD1
VRG1
VGS1
Quiescent Current
Temperature Compensation
VGS2
Figure 1. Functional Block Diagram
MW4IC915NBR1
MW4IC915GNBR1
860 -- 960 MHz, 15 W, 26 V
GSM/GSM EDGE, N--CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 1329--09
TO--272 WB--16
PLASTIC
MW4IC915NBR1
CASE 1329A--04
TO--272 WB--16 GULL
PLASTIC
MW4IC915GNBR1
GND
VRD2
VRG2
VDS1
VRD1
1
2
3
4
5
16
15
GND
NC
RFin
6
14
VRG1
VGS1
VGS2
NC
GND
RFout/
VDS2
7
8
9
10
11
13
12
NC
GND
(Top View)
Note: Exposed backside flag is source
terminal for transistors.
Figure 2. Pin Connections
1. Refer to AN1987/D, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1987.
© Freescale Semiconductor, Inc., 2006, 2011. All rights reserved.
RF Device Data
Freescale Semiconductor
MW4IC915NBR1 MW4IC915GNBR1
1
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain--Source Voltage
Rating
VDSS
--0.5. +65
Vdc
Gate--Source Voltage
VGS
--0.5. +15
Vdc
Storage Temperature Range
Tstg
--65 to +175
°C
Operating Junction Temperature
TJ
200
°C
Symbol
Value (1)
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Unit
RθJC
°C/W
GSM Application
(Pout = 15 W CW)
Stage 1, 26 Vdc, IDQ = 60 mA
Stage 2, 26 Vdc, IDQ = 240 mA
7.3
1.7
GSM EDGE Application
(Pout = 7.5 W CW)
Stage 1, 26 Vdc, IDQ = 60 mA
Stage 2, 26 Vdc, IDQ = 240 mA
7.3
1.8
CDMA Application
(Pout = 3.75 W CW)
Stage 1, 26 Vdc, IDQ = 60 mA
Stage 2, 26 Vdc, IDQ = 240 mA
7.4
1.9
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M3 (Minimum)
Charge Device Model
C2 (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD 22--A113, IPC/JEDEC J--STD--020
Rating
Package Peak Temperature
Unit
3
260
°C
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDS = 26 Vdc, IDQ1 = 90 mA, IDQ2 = 240 mA, Pout = 15 W PEP,
f1 = 960 MHz and f2 = 960.1 MHz, Two--Tone
Power Gain
Gps
29
31
—
dB
Power Added Efficiency
PAE
29
31
—
%
Intermodulation Distortion
IMD
—
--40
--29
dBc
Input Return Loss
IRL
—
--15
--10
dB
1. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
(continued)
MW4IC915NBR1 MW4IC915GNBR1
2
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances (In Freescale Reference Board) VDS = 26 V, IDQ1 = 60 mA, IDQ2 = 240 mA, 869 MHz<Frequency>960 MHz
Quiescent Current Accuracy over Temperature
with 1.8 kΩ Gate Feed Resistors (--10 to 85°C) (1)
∆IQT
—
±5
—
%
Gain Flatness in 40 MHz Bandwidth @ Pout = 3 W CW
GF
—
0.2
—
dB
Deviation from Linear Phase in 40 MHz Bandwidth @ Pout = 3 W CW
Φ
—
±0.6
—
°
Delay
—
2.5
—
ns
∆Φ
—
±15
—
°
Delay @ Pout = 3 W CW Including Output Matching
Part--to--Part Phase Variation @ Pout = 3 W CW
Typical GSM/GSM EDGE Performances (In Freescale Reference Board) VDS = 26 V, IDQ1 = 60 mA, IDQ2 = 240 mA,
869 MHz<Frequency<960 MHz
Output Power, 1dB Compression Point
P1dB
—
20
—
Watts
Power Gain @ Pout = 15 W CW
Gps
—
30
—
dB
Power Added Efficiency @ Pout = 15 W CW
PAE
—
44
—
%
Input Return Loss @ Pout = 15 W CW
IRL
—
--15
—
dB
Error Vector Magnitude @ Pout = 3 W Avg. including
0.6% rms source EVM
EVM
—
1.5
—
% rms
Spectral Regrowth at 400 kHz Offset @ Pout = 3 W Avg.
SR1
—
--65
—
dBc
Spectral Regrowth at 600 kHz Offset @ Pout = 3 W Avg.
SR2
—
--83
—
dBc
1. Refer to AN1977/D, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1977.
MW4IC915NBR1 MW4IC915GNBR1
RF Device Data
Freescale Semiconductor
3
L1
VDS1
+
C1
RF
INPUT
VGS1
C2
C3
Z1
16
R1
+
C5
C4
C8
C7
R2
C10
NC 15
14
6
C6
VGS2
1
2
3
4
5
VDS2
Z2
Z3
C12
Z4
C11
M1
C13
7
8
9
+
+
C15
C14
Z8
M4
Z5
C16
Z9
RF
OUTPUT
Z7
Z6
M2
10 NC
11
M3
NC 13
Quiescent Current
Temperature Compensation
12
+
C9
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
PCB
0.086″, 50 Ω Microstrip
0.133″ x 0.236″ Microstrip
0.435″ x 0.283″ Microstrip
0.171″ x 0.283″ Microstrip
0.429″ x 0.283″ Microstrip
0.157″ x 0.283″ Microstrip
0.429″ x 0.283″ Microstrip
0.394″ x 0.088″ Microstrip
0.181″ x 0.088″ Microstrip
Taconic TLX8, 0.030″, εr = 2.55
Figure 3. MW4IC915NBR1(GNBR1) Test Fixture Schematic
Table 6. MW4IC915NBR1(GNBR1) Test Fixture Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C6, C9, C14
22 mF, 35 V Tantalum Chip Capacitors
TAJE226M035R
AVX
C2, C5, C8, C11
1000 pF Chip Capacitors
100B102JCA500X
ATC
C3, C4, C7, C10, C16
22 pF Chip Capacitors
100B220JCA500X
ATC
C12, C13
10 pF Chip Capacitors
100B100JCA500X
ATC
C15
10 mF Tantalum Chip Capacitor
T491X226K035AS4394
Kemet
L1
12.5 nH Inductor
M1, M2, M3, M4
0.283″, 90_ Mitered Microstrip Bends
R1, R2
10 kΩ, 1/4 W Chip Resistor (1206)
MW4IC915NBR1 MW4IC915GNBR1
4
RF Device Data
Freescale Semiconductor
C1
VDS1
C2
C11
MW4IC915MB
Rev 0
VDS2
C14
C15
C3
C10
L1
C16
C12
C13
C4
C5
C7
C8
C6
R1
VGS1
C9
VGS2
R2
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact
on form, fit or function of the current product.
Figure 4. MW4IC915NBR1(GNBR1) Test Fixture Component Layout
MW4IC915NBR1 MW4IC915GNBR1
RF Device Data
Freescale Semiconductor
5
VDS
+
1
2
3
4
5
R1
+
C7
RF
INPUT
C10
C9
16
14
6
C6
Z2
Z3
C15
Z4
Z5
C2
Z6
C3
Z7
RF
OUTPUT
C1
7
8
9
10 NC
11
NC 13
Quiescent Current
Temperature Compensation
12
VGS
R2
R7
C12
C5
NC 15
Z1
C11
C4
+
P2
C8
C16
R4
R3
R6
C13
C14
P1
C17
R5
Z1
Z2
Z3
Z4
0.681″ x 0.039″, 50 Ω Microstrip
0.157″ x 0.228″ Microstrip
0.468″ x 0.157″ Microstrip
0.220″ x 0.157″ Microstrip
Z5
Z6
Z7
PCB
0.566″ x 0.043″ Microstrip
0.165″ x 0.043″ Microstrip
0.078″ x 0.043″ Microstrip
Taconic RF35, 0.02″, εr = 3.5
Figure 5. MW4IC915NBR1(GNBR1) Reference Board Schematic
Table 7. MW4IC915NBR1(GNBR1) Reference Board Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C15
10 pF Chip Capacitors (0805), ACCU--P
08051J100GBT
AVX
C2
5.6 pF Chip Capacitor (0805), ACCU--P
08051J5R6BBT
AVX
C3, C4, C9, C11, C13
33 pF Chip Capacitors (0805), ACCU--P
08051J330GB
AVX
C5, C10, C12, C14
10 nF Chip Capacitors (0805)
08055C103KAT
AVX
C6, C7, C8
22 mF, 35 V Tantalum Capacitors
TAJE226MO35R
AVX
C16, C17
100 nF Chip Capacitors (0805)
08055C104KAT
AVX
P1, P2
5 kΩ Potentiometer CMS Cermet Multi--turn
3224W
Bourns
R1, R2, R3, R4, R5
0 Ω, 1/8 W Chip Resistors (0805)
R6, R7
10 kΩ, 1/4 W Chip Resistors (1206)
MW4IC915NBR1 MW4IC915GNBR1
6
RF Device Data
Freescale Semiconductor
VDD
GROUND
R1
C6
C7
C5
C4
C10
C9
C15
C13
C3
C1
C11
C14
C2
C12
R7
R6
C17
P1
R5
MW4IC915MB
Rev 0
P2
C16
C8
R4
R3
R2
VGG
GROUND
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact
on form, fit or function of the current product.
Figure 6. MW4IC915NBR1(GNBR1) Reference Board Component Layout
MW4IC915NBR1 MW4IC915GNBR1
RF Device Data
Freescale Semiconductor
7
PAE, POWER ADDED EFFICIENCY (%),
Gps, POWER GAIN (dB)
34
0
Gps
32
PAE
30
--8
--16
IRL
28
--24
26
IMD3
24
22
--32
--40
--48
VDD = 26 Vdc
Pout = 15 W (PEP)
IDQ1 = 90 mA, IDQ2 = 240 mA
Two--Tone Measurement
100 kHz Tone Spacing
20
18
16
14
860
880
900
920
940
--56
--64
--72
--80
960
IRL, INPUT RETURN LOSS (dB)
IMD3, INTERMODULATION DISTORTION (dBc)
TYPICAL CHARACTERISTICS (FREESCALE TEST FIXTURE, 50 OHM SYSTEM)
f, FREQUENCY (MHz)
0
Gps
32
--7
30
--14
28
--21
IRL
26
VDD = 26 Vdc
Pout = 6 W (PEP)
IDQ1 = 90 mA, IDQ2 = 240 mA
Two--Tone Measurement
100 kHz Tone Spacing
24
22
IMD3
20
PAE
18
--35
--42
--49
--56
16
14
860
--28
--63
880
900
920
--70
960
940
IMD, INTERMODULATION DISTORTION (dBc)
34
IRL, INPUT RETURN LOSS (dB)
IMD3, INTERMODULATION DISTORTION (dB)
PAE, POWER ADDED EFFICIENCY (%), Gps, POWER GAIN (dB)
Figure 7. Two--Tone Wideband Circuit Performance @ Pout = 15 Watts PEP
--20
3rd Order
--30
5th Order
--40
7th Order
--50
--60
--70
VDD = 26 Vdc
IDQ1 = 90 mA, IDQ2 = 240 mA
f = 960 MHz
100 kHz Tone Spacing
--80
--90
0.1
1
f, FREQUENCY (MHz)
100
10
Pout, OUTPUT POWER (WATTS) Avg.
Figure 8. Two--Tone Wideband Circuit Performance
@ Pout = 6 Watts
Figure 9. Intermodulation Distortion Products
versus Output Power
TYPICAL CHARACTERISTICS (FREESCALE REFERENCE BOARD)
--30_C
33 V = 26 Vdc
DD
IDQ1 = 60 mA, IDQ2 = 240 mA
32 f = 910 MHz
85_C
PAE
30
32
16
28
27
0.1
40
24
85_C
29
56
48
Gps
25_C
31
25_C
8
1
10
0
100
Pout, OUTPUT POWER (WATTS)
Figure 10. Power Gain and Power Added Efficiency
versus Output Power
35
34
G ps , POWER GAIN (dB)
TC = --30_C
PAE, POWER ADDED EFFICIENCY (%)
G ps , POWER GAIN (dB)
34
TC = --30_C
33
VDD = 26 Vdc
Pout = 3 W CW
IDQ1 = 60 mA, IDQ2 = 240 mA
32
25_C
31
30
85_C
29
28
860
870
880
890
900
910
920
930
940
950
960
f, FREQUENCY (MHz)
Figure 11. Power Gain versus Frequency
MW4IC915NBR1 MW4IC915GNBR1
8
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS (FREESCALE REFERENCE BOARD) -- CONTINUED
34
21
30
85_C
28
860
4
3.5
3
870
880
890
900
910
920
930
940
950
20
TC = --30_C
19
25_C
85_C
18
VDD = 26 Vdc
Pout = 3 W CW
IDQ1 = 60 mA, IDQ2 = 240 mA
17
860
960
870
880
890
900
920
930
940
950
f, FREQUENCY (MHz)
Figure 12. Power Gain versus Frequency
Figure 13. Power Added Efficiency versus
Frequency
--50
VDD = 26 Vdc
IDQ1 = 60 mA, IDQ2 = 240 mA
EDGE Modulation
f = 910 MHz
25_C
--30_C
2.5
TC = 85_C
2
1.5
1
0.5
1
10
100
960
25_C
--55
TC = 85_C
--30_C
--60
--65
--70
VDD = 26 Vdc
IDQ1 = 60 mA, IDQ2 = 240 mA
EDGE Modulation
f = 910 MHz
--75
--80
0
0.1
910
f, FREQUENCY (MHz)
SPECTRAL REGROWTH @ 400 kHz (dBc)
G ps , POWER GAIN (dB)
25_C
29
EVM, ERROR VECTOR MAGNITUDE (% rms)
VDD = 26 Vdc
Pout = P1dB
IDQ1 = 60 mA, IDQ2 = 240 mA
32
31
PAE, POWER ADDED EFFICIENCY (%)
TC = --30_C
33
0.1
1
10
Pout, OUTPUT POWER (WATTS) AVG.
Pout, OUTPUT POWER (WATTS)
Figure 14. Error Vector Magnitude versus
Output Power
Figure 15. Spectral Regrowth at 400 kHz
versus Output Power
100
SPECTRAL REGROWTH @ 600 kHz (dBc)
--70
--72
--74
VDD = 26 Vdc
IDQ1 = 60 mA, IDQ2 = 240 mA
EDGE Modulation
f = 910 MHz
--76
TC = --30_C
--78
85_C
25_C
--80
--82
--84
--86
0.1
1
10
100
Pout, OUTPUT POWER (WATTS)
Figure 16. Spectral Regrowth at 600 kHz
versus Output Power
MW4IC915NBR1 MW4IC915GNBR1
RF Device Data
Freescale Semiconductor
9
Zo = 5 Ω
Zload
f = 900 MHz
f = 980 MHz
VDD = 26 V, IDQ1 = 60 mA, IDQ2 = 240 mA, Pout = P1dB
f
MHz
Zload
Ω
900
3.23 -- j4.30
910
3.24 -- j4.36
920
3.25 -- j4.42
930
3.25 -- j4.47
940
3.23 -- j4.52
950
3.21 -- j4.56
960
3.16 -- j4.60
970
3.11 -- j4.65
980
3.04 -- j4.70
Zload
= Test circuit impedance as
measured from drain to ground.
Output
Matching
Network
Device
Under Test
Z
in
Z
load
Figure 17. Series Equivalent Input and Load Impedance
MW4IC915NBR1 MW4IC915GNBR1
10
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
MW4IC915NBR1 MW4IC915GNBR1
RF Device Data
Freescale Semiconductor
11
MW4IC915NBR1 MW4IC915GNBR1
12
RF Device Data
Freescale Semiconductor
MW4IC915NBR1 MW4IC915GNBR1
RF Device Data
Freescale Semiconductor
13
MW4IC915NBR1 MW4IC915GNBR1
14
RF Device Data
Freescale Semiconductor
MW4IC915NBR1 MW4IC915GNBR1
RF Device Data
Freescale Semiconductor
15
MW4IC915NBR1 MW4IC915GNBR1
16
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following documents, tools and software to aid your design process.
Application Notes
• AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
• AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
• AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family
• AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over--Molded Plastic Packages
• AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
Development Tools
• Printed Circuit Boards
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
8
Mar. 2011
Description
• Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification
number, PCN13628, p. 2
• Replaced Case Outline 1329A--03 with 1329A--04, Issue F, p. 1, 14--16. Added pin numbers 1 through 17.
Corrected mm dimension L for gull--wing foot from 4.90--5.06 Min--Max to 0.46--0.61 Min--Max. Corrected
L1 mm dimension from .025 BSC to 0.25 BSC. Added JEDEC Standard Package Number.
• Added Product Documentation, Software and Tools and Revision History, p. 17
MW4IC915NBR1 MW4IC915GNBR1
RF Device Data
Freescale Semiconductor
17
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MW4IC915NBR1 MW4IC915GNBR1
MW4IC915N
Rev. 8, 3/2011
18
RF Device Data
Freescale Semiconductor
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