Not for new design, this product will be obsoleted soon TSDF52830YS Vishay Semiconductors Dual - MOSMIC®- two AGC Amplifiers for TV-Tuner Prestage with Integrated Band Switch for One-Line Switching 6 Comments MOSMIC - MOS Monolithic Integrated Circuit VY Description CW The Dual-MOSMIC® TSDF52830YS, assembled in the well-known SOT-363 plastic package, is a combination of two different MOSMIC® amplifiers with common Source and common Gate 2 leads and an integrated switch. One of the MOSMIC stages is optimized for use in VHF applications, especially regarding cross modulation performance and noise figure at lower VHF frequencies, whereas the other stage is optimized for use in UHF applications regarding gain and noise figure performance at higher frequencies of UHF range. The integrated switch is operated by the Gate 1 bias of the UHF amplifier on Pin 1. All of the Gates are protected against excessive input voltage surges by integrated antiserial diodes between themselves and Source. 1 5 4 WN5 2 3 19024 Electrostatic sensitive device. Observe precautions for handling Applications Low noise gain controlled VHF and UHF input stages with 5 V supply voltage, such as in digital and analog TV tuners and in other multimedia and communications equipment. Typical Application Features 5 AGC • Two differently optimized amplifiers in a single package. One of them has a fully e3 internal self-biasing network on chip and the other has a partly integrated bias for easy Gate 1 switch-off with PNP switching transistors inside PLL -IC • Internal switch for saving lines on PCB layout as well as external components • Integrated gate protection diodes • Low noise figure, high gain • Typical forward transadmittance of 31 mS resp. 28 mS • Superior cross modulation at gain reduction • High AGC-range with soft slope • Main AGC control range from 3 V to 0.5 V • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC C RFC +5 V G2 (common) C VHF in 6 D G1 AMP2 4 C VHF out RFC RG1 +5 V V GG UHF in C D AMP1 1 G1 3 C UHF out S (common) 2 V GG = 5 V: UHF AMP is on; VHF AMP is off V GG = 0 V: UHF AMP is off; VHF AMP is on (0 = shorted to Ground or open) 19025 Mechanical Data Case: SOT-363 Plastic case Weight: approx. 6.0 mg V - Vishay Y - Year, is variable for digit from 0 to 9 Parts Table Part TSDF52830YS Document Number 85178 Rev. 1.2, 05-Sep-08 Marking WN5 Package SOT-363 www.vishay.com 1 TSDF52830YS Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Amplifier 1 Following data are valid for operating amplifier 1 (pin 1, 3, 5, 2) which is optimized for UHF applications Parameter Test condition Symbol Value VDS 8 V ID 25 mA ± IG1/G2SM 10 mA + VG1± VG2SM 6 V Drain - source voltage Drain current Gate 1/Gate 2 - source peak current Gate 1/Gate 2 - source voltage Gate 1 - source voltage Unit - VG1SM 1.5 V Ptot 200 mW Channel temperature TCh 150 °C Storage temperature range Tstg - 55 to + 150 °C Total power dissipation Tamb ≤ 60 °C Amplifier 2 Following data are valid for operating amplifier 2 (pin 6, 4, 5, 2) which is optimized for VHF applications Parameter Test condition Symbol Value VDS 8 V ID 30 mA ± IG1/G2SM 10 mA + VG1/± VG2SM 6 V Drain - source voltage Drain current Gate 1/Gate 2 - source peak current Gate 1/Gate 2 - source voltage Gate 1 - source voltage Unit - VG1SM 1.5 V Ptot 200 mW Channel temperature TCh 150 °C Storage temperature range Tstg - 55 to + 150 °C Symbol Value Unit RthChA 450 K/W Total power dissipation Tamb ≤ 60 °C Maximum Thermal Resistance Parameter Channel ambient 1) on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 μm Cu www.vishay.com 2 Test condition 1) Document Number 85178 Rev. 1.2, 05-Sep-08 TSDF52830YS Vishay Semiconductors Electrical DC Characteristics Tamb = 25 °C, unless otherwise specified Amplifier 1 Following data are valid for operating amplifier 1 (pin 1, 3, 5, 2) which is optimized for UHF applications Parameter Test condition Symbol Min V(BR)DSS 15 Drain - source breakdown voltage ID = 10 μA, VG2S = VG1S = 0 Gate 1 - source breakdown voltage + IG1S = 10 mA, VG2S = VDS = 0 + V(BR)G1SS 7 ± IG2S = 10 mA, VG1S = VDS = 0 ± V(BR)G2SS 7 Gate 1 - source leakage current + VG1S = 5 V, VG2S = VDS = 0 + IG1SS Gate 2 - source leakage current ± VG2S = 5 V, VG1S = VDS = 0 ± IG2SS Drain - source operating current VDS = VRG1 = 5 V, VG2S = 4 V, RG1 = 100 kΩ IDSO 8 Typ. Max Unit V 10 12 V 10 V 20 nA 20 nA 17 mA Gate 1 - source cut-off voltage VDS = 5 V, VG2S = 4, ID = 20 μA VG1S(OFF) 0.3 1.0 V Gate 2 - source cut-off voltage VDS = VRG1 = 5 V, RG1 =100 kΩ, ID = 20 μA VG2S(OFF) 0.3 1.2 V Amplifier 2 Following data are valid for operating amplifier 2 (pin 6, 4, 5, 2) which is optimized for VHF applications Max Unit Gate 1 - source breakdown voltage Parameter + IG1S = 10 mA, VG2S = VDS = 0 + V(BR)G1SS Test condition Symbol Min 7 Typ. 10 V Gate 2 - source breakdown voltage ± IG2S = 10 mA, VG1S = VDS = 0 ± V(BR)G2SS 7 10 V Gate 1 - source leakage current + VG1S = 5 V, VG2S = VDS = 0 + IG1SS 50 μA Gate 2 - source leakage current ± VG2S = 5 V, VG1S = VDS = 0 ± IG2SS 20 nA Drain - source operating current VDS = VRG1 = 5 V, VG2S = 4 V, Gate 1 = nc IDSP 8 17 mA VG2S(OFF) 0.3 1.2 V Gate 2 - source cut-off voltage Document Number 85178 Rev. 1.2, 05-Sep-08 VDS = VRG1 = 5 V, Gate 1 = nc, ID = 20 μA 13 www.vishay.com 3 TSDF52830YS Vishay Semiconductors Electrical AC Characteristics Tamb = 25 °C, unless otherwise specified Amplifier 1 VDS = VRG1 = 5 V, VG2S = 4 V, RG1 = 100 kΩ, ID = IDSO, f = 1 MHz, Tamb = 25 °C, unless otherwise specified Following data are valid for operating amplifier 1 (pin 1, 3, 5, 2) which is optimized for UHF applications Symbol Min Typ. Max Unit Forward transadmittance Parameter Test condition |y21s| 27 31 35 mS Gate 1 input capacitance Cissg1 1.7 2.1 pF Crss 20 Feedback capacitance Output capacitance fF Coss 0.9 pF GS = 2 mS, BS = BSopt, GL = 0.5 mS, BL = BLopt, f = 200 MHz Gps 33 dB GS = 3.3 mS, BS = BSopt, GL = 1 mS, BL = BLopt, f = 400 MHz Gps 30 dB GS = 3.3 mS, BS = BSopt, GL = 1 mS, BL = BLopt, f = 800 MHz Gps 25 dB AGC range VDS = 5 V, VG2S = 0.5 to 4 V, f = 800 MHz Gps 50 dB Noise figure GS = GL = 20 mS, BS = BL = 0, f = 50 MHz F 5.0 7.0 dB GS = 2 mS, GL = 0.5 mS, BS = BSopt, f = 400 MHz F 1.0 1.5 dB GS = 3.3 mS, GL = 1 mS, BS = BSopt, f = 800 MHz F 1.3 2.0 dB Power gain Cross modulation 40 Input level for k = 1 % @ 0 dB AGC fw = 50 MHz, funw = 60 MHz Xmod 90 Input level for k = 1 % @ 40 dB AGC fw = 50 MHz, funw = 60 MHz Xmod 100 dBμV 105 dBμV Remark on improving intermodulation behavior: By setting RG1 smaller than 100 kΩ, typical value of IDSO will raise and improved intermodulation behavior will be performed. www.vishay.com 4 Document Number 85178 Rev. 1.2, 05-Sep-08 TSDF52830YS Vishay Semiconductors Amplifier 2 VDS = VRG1 = 5 V, VG2S = 4 V, Gate 1 = nc, ID = IDSP, f = 1 MHz, Tamb = 25 °C, unless otherwise specified Following data are valid for operating amplifier 2 (pin 6, 4, 5, 2) which is optimized for VHF applications Symbol Min Typ. Max Unit Forward transadmittance Parameter Test condition |y21s| 23 28 33 mS Gate 1 input capacitance Cissg1 2.2 2.7 pF Crss 20 Feedback capacitance Output capacitance fF Coss 1.0 pF GS = 2 mS, BS = BSopt, GL = 0.5 mS, BL = BLopt, f = 200 MHz Gps 32 dB GS = 2 mS, BS = BSopt, GL = 1 mS, BL = BLopt, f = 400 MHz Gps 28 dB GS = 3.3 mS, BS = BSopt, GL = 1 mS, BL = BLopt, f = 800 MHz Gps 22 dB AGC range VDS = 5 V, VG2S = 0.5 to 4 V, f = 200 MHz Gps 50 dB Noise figure GS = GL = 20 mS, BS = BL = 0, f = 50 MHz F 4.5 6.0 dB GS = 2 mS, GL = 1 mS, BS = BSopt, f = 400 MHz F 1.0 1.6 dB GS = 3.3 mS, GL = 1 mS, BS = BSopt, f = 800 MHz F 1.5 2.3 dB Power gain Cross modulation Document Number 85178 Rev. 1.2, 05-Sep-08 Input level for k = 1 % @ 0 dB AGC fw = 50 MHz, funw = 60 MHz Xmod 90 dBμV Input level for k = 1 % @ 40 dB AGC fw = 50 MHz, funw = 60 MHz Xmod 105 dBμV www.vishay.com 5 TSDF52830YS Vishay Semiconductors Package Dimensions in mm (Inches) 14280 www.vishay.com 6 Document Number 85178 Rev. 1.2, 05-Sep-08 TSDF52830YS Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively. 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA. 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 85178 Rev. 1.2, 05-Sep-08 www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1