Data Sheet

Freescale Semiconductor
Technical Data
Document Number: MRFE6S9125N
Rev. 0, 10/2007
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications
in 28 volt base station equipment.
N - CDMA Application
• Typical Single - Carrier N - CDMA Performance @ 880 MHz, VDD = 28 Volts,
IDQ = 950 mA, Pout = 27 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging, Traffic
Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @
0.01% Probability on CCDF.
Power Gain — 20.2 dB
Drain Efficiency — 31%
ACPR @ 750 kHz Offset = - 45.7 dBc in 30 kHz Bandwidth
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, 3 dB Overdrive,
Designed for Enhanced Ruggedness
GSM EDGE Application
• Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 700 mA,
Pout = 60 Watts Avg., Full Frequency Band (865 - 960 MHz or 920 - 960 MHz)
Power Gain — 20 dB
Drain Efficiency — 40%
Spectral Regrowth @ 400 kHz Offset = - 63 dBc
Spectral Regrowth @ 600 kHz Offset = - 78 dBc
EVM — 1.8% rms
GSM Application
• Typical GSM Performance: VDD = 28 Volts, IDQ = 700 mA, Pout =
125 Watts, Full Frequency Band (920 - 960 MHz)
Power Gain — 19 dB
Drain Efficiency — 62%
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MRFE6S9125NR1
MRFE6S9125NBR1
880 MHz, 27 W AVG., 28 V
SINGLE N - CDMA, GSM EDGE
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 1486 - 03, STYLE 1
TO - 270 WB - 4
PLASTIC
MRF6S9125NR1
CASE 1484 - 04, STYLE 1
TO - 272 WB - 4
PLASTIC
MRF6S9125NBR1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
VDSS
- 0.5, +66
Vdc
Gate - Source Voltage
VGS
- 0.5, +12
Vdc
Maximum Operation Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
Symbol
Value (2,3)
Unit
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 125 W CW
Case Temperature 76°C, 27 W CW
RθJC
0.44
0.45
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools (Software & Tools)/Calculators to access MTTF calculators
by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2007. All rights reserved.
RF Device Data
Freescale Semiconductor
MRFE6S9125NR1 MRFE6S9125NBR1
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1B (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Rating
Package Peak Temperature
Unit
3
260
°C
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 66 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
10
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 400 μAdc)
VGS(th)
1
2.1
3
Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 950 mAdc, Measured in Functional Test)
VGS(Q)
2
2.86
4
Vdc
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 2.74 Adc)
VDS(on)
0.05
0.24
0.3
Vdc
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
1.9
—
pF
Output Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
64
—
pF
Input Capacitance
(VDS = 28 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
Ciss
—
350
—
pF
Off Characteristics
On Characteristics
Dynamic Characteristics (1)
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 950 mA, Pout = 27 W Avg. N - CDMA, f = 880 MHz,
Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz Offset.
PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain
Gps
19
20.2
24
dB
Drain Efficiency
ηD
29
31
—
%
ACPR
—
- 45.7
- 44
dBc
IRL
—
- 18
-9
dB
Adjacent Channel Power Ratio
Input Return Loss
1. Part is internally input matched.
(continued)
MRFE6S9125NR1 MRFE6S9125NBR1
2
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 700 mA,
Pout = 60 W Avg., 920 - 960 MHz, EDGE Modulation
Power Gain
Gps
—
20
—
dB
Drain Efficiency
ηD
—
40
—
%
Error Vector Magnitude
EVM
—
1.8
—
% rms
Spectral Regrowth at 400 kHz Offset
SR1
—
- 63
—
dBc
Spectral Regrowth at 600 kHz Offset
SR2
—
- 78
—
dBc
Typical CW Performances (In Freescale GSM Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 700 mA, Pout = 125 W, 920 - 960 MHz
Power Gain
Gps
—
19
—
dB
Drain Efficiency
ηD
—
62
—
%
Input Return Loss
IRL
—
- 12
—
dB
P1dB
—
125
—
W
Pout @ 1 dB Compression Point, CW
(f = 880 MHz)
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 950 mA, 865 - 900 MHz Bandwidth
VBW
Video Bandwidth @ 125 W PEP Pout where IM3 = - 30 dBc
(Tone Spacing from 100 kHz to VBW)
—
10
—
ΔIMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both
sidebands)
MHz
Gain Flatness in 35 MHz Bandwidth @ Pout = 27 W Avg.
GF
—
0.93
—
dB
Gain Variation over Temperature
( - 30°C to +85°C)
ΔG
—
0.011
—
dB/°C
ΔP1dB
—
0.205
—
dBm/°C
Output Power Variation over Temperature
( - 30°C to +85°C)
MRFE6S9125NR1 MRFE6S9125NBR1
RF Device Data
Freescale Semiconductor
3
R1
VBIAS
+
C10
RF
INPUT
C9
+
+
C8
C7
C18
R2
C6
Z2
Z3
Z4
Z5
+
+
C20
C21
C22
L2
L1
Z1
C19
Z6
Z9
C4
Z7
Z10
Z11
C11
C12
Z12
Z13
Z14
Z15
Z16
C13
C14
C15
C16
Z8
C1
VSUPPLY
+
C23
RF
Z17 OUTPUT
C17
DUT
C3
C2
Z1, Z17
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
0.200″
1.060″
0.382″
0.108″
0.200″
0.028″
0.236″
0.050″
0.238″
x 0.080″
x 0.080″
x 0.220″
x 0.220″
x 0.420″
x 0.620″
x 0.620″
x 0.620″
x 0.620″
C5
Microstrip
Microstrip
Microstrip
Microstrip
x 0.620″ Taper
Microstrip
Microstrip
Microstrip
Microstrip
Z10
Z11
Z12
Z13
Z14
Z15
Z16
PCB
0.057″ x 0.620″ Microstrip
0.119″ x 0.620″ Microstrip
0.450″ x 0.220″ Microstrip
0.061″ x 0.220″ Microstrip
0.078″ x 0.220″ Microstrip
0.692″ x 0.080″ Microstrip
0.368″ x 0.080″ Microstrip
Arlon CuClad 250GX - 0300 - 55 - 22, 0.030″, εr = 2.55
Figure 1. MRFE6S9125NR1(NBR1) Test Circuit Schematic
Table 6. MRFE6S9125NR1(NBR1) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1
20 pF Chip Capacitor
ATC100B200FT500XT
ATC
C2
6.2 pF Chip Capacitor
ATC100B6R2BT500XT
ATC
C3, C15
0.8 - 8.0 pF Variable Capacitors, Gigatrim
27291SL
Johanson
C4, C5
11 pF Chip Capacitors
ATC100B110FT500XT
ATC
C6, C18, C19
0.56 μF, 50 V Chip Capacitors
C1825C564J5RAC
Kemet
C7, C8
47 μF, 16 V Tantalum Capacitors
T491B476K016AT
Kemet
C9, C23
47 pF Chip Capacitors
ATC700B470FT500XT
ATC
C10
100 μF, 50 V Electrolytic Capacitor
MCHT101M1HB - 1017 - RH
Multicomp
C11, C12
12 pF Chip Capacitors
ATC100B120FT250XT
ATC
C13, C14
5.1 pF Chip Capacitors
ATC100B5R1BT250XT
ATC
C16
0.3 pF Chip Capacitor
ATC700B0R3BT500XT
ATC
C17
39 pF Chip Capacitor
ATC700B390FT500XT
ATC
C20, C21
22 μF, 35 V Tantalum Capacitors
T491X226K035AT
Kemet
C22
470 μF, 63 V Electrolytic Capacitor
EKME630ELL471MK25S
Multicomp
L1
7.15 nH Inductor
1606 - 7J
CoilCraft
L2
8.0 nH Inductor
A03T
CoilCraft
R1
15 Ω, 1/3 W Chip Resistor
CRCW121015R0FKEA
Vishay
R2
560 kΩ, 1/4 W Resistor
CRCW12065600FKEA
Vishay
MRFE6S9125NR1 MRFE6S9125NBR1
4
RF Device Data
Freescale Semiconductor
C20 C21
C8 C7
C22
C9
VGG
C10
C6
R2
C4
R1
VDD
C19
C23
C18
C11
C14
C1
C17
C2
C5
C3
CUT OUT AREA
L2
L1
C13
C15
C16
C12
900 MHz
TO272 WB
Rev. 0
Figure 2. MRFE6S9125NR1(NBR1) Test Circuit Component Layout
MRFE6S9125NR1 MRFE6S9125NBR1
RF Device Data
Freescale Semiconductor
5
ηD
30
VDD = 28 Vdc, Pout = 27 W (Avg.)
IDQ = 950 mA, N−CDMA IS−95
Pilot, Sync, Paging, Traffic Codes
8 Through 13
19
Gps
18
20
−30
IRL
17
−40
ACPR
−50
16
15
ALT1
−60
14
820
840
860
880
900
920
940
960
−70
980
0
ACPR (dBc), ALT1 (dBc)
Gps, POWER GAIN (dB)
20
−5
−10
−15
−20
IRL, INPUT RETURN LOSS (dB)
40
21
ηD, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS
f, FREQUENCY (MHz)
Gps
50
ηD
18
VDD = 28 Vdc, Pout = 62.5 W (Avg.)
IDQ = 950 mA, N−CDMA IS−95
Pilot, Sync, Paging, Traffic Codes
8 Through 13
17
40
30
IRL
16
−30
ACPR
−40
15
14
−50
ALT1
13
820
840
860
880
900
920
940
960
−60
980
0
ACPR (dBc), ALT1 (dBc)
Gps, POWER GAIN (dB)
19
−5
−10
−15
−20
IRL, INPUT RETURN LOSS (dB)
60
20
ηD, DRAIN
EFFICIENCY (%)
Figure 3. Single - Carrier N - CDMA Broadband Performance
@ Pout = 27 Watts Avg.
f, FREQUENCY (MHz)
Figure 4. Single - Carrier N - CDMA Broadband Performance
@ Pout = 62.5 Watts Avg.
22
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
1187 mA
21
Gps, POWER GAIN (dB)
−10
IDQ = 1475 mA
950 mA
20
712 mA
19
475 mA
18
17
VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz
Two−Tone Measurements
16
VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz
Two−Tone Measurements
−20
−30
IDQ = 475 mA
712 mA
−40
1425 mA
−50
1187 mA
950 mA
−60
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
300
1
10
100
300
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRFE6S9125NR1 MRFE6S9125NBR1
6
RF Device Data
Freescale Semiconductor
0
IMD, INTERMODULATION DISTORTION (dBc)
IMD, INTERMODULATION DISTORTION (dBc)
TYPICAL CHARACTERISTICS
VDD = 28 Vdc, IDQ = 950 mA
f1 = 880 MHz, f2 = 880.1 MHz
Two−Tone Measurements
−20
−40
3rd Order
−60
5th Order
−80
7th Order
−100
10
1
100
−10
VDD = 28 Vdc, Pout = 125 W (PEP)
IDQ = 950 mA, Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 880 MHz
−20
IM3−U
−30
IM3−L
IM5−U
−40
IM5−L
−50
IM7−U
IM7−L
−60
1
400
10
Pout, OUTPUT POWER (WATTS) PEP
TWO−TONE SPACING (MHz)
Figure 7. Intermodulation Distortion Products
versus Output Power
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
60
Pout, OUTPUT POWER (dBm)
Ideal
P6dB = 53.39 dBm (218.27 W)
59
80
58
P3dB = 52.83 dBm (191.87 W)
57
56
55
P1dB = 51.92 dBm
(155.6 W)
54
53
Actual
52
VDD = 28 Vdc, IDQ = 950 mA, Pulsed CW
12 μsec(on), 1% Duty Cycle, f = 880 MHz
51
50
29
30
31
32
33
34
35
36
37
38
39
Pin, INPUT POWER (dBm)
70
VDD = 28 Vdc, IDQ = 950 mA
f = 880 MHz, N−CDMA IS−95
Pilot, Sync, Paging, Traffic Codes
8 Through 13
60
50
−10
TC = −30_C
25_C
85_C
25_C
−30_C
−20
−30
85_C
25_C −40
40
−30_C
30
85_C −50
ACPR
20
−30_C −60
Gps
85_C
ηD
10
−70
ALT1
25_C
0
1
10
100
−80
200
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
ALT1, CHANNEL POWER (dBc)
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
Figure 9. Pulsed CW Output Power versus
Input Power
Pout, OUTPUT POWER (WATTS) AVG.
Figure 10. Single - Carrier N - CDMA ACPR, ALT1, Power Gain
and Drain Efficiency versus Output Power
MRFE6S9125NR1 MRFE6S9125NBR1
RF Device Data
Freescale Semiconductor
7
TYPICAL CHARACTERISTICS
22
TC = −30_C
−30_C
21
IDQ = 950 mA
f = 880 MHz
25_C
19
85_C
50
40
18
17
30
ηD
16
20
VDD = 28 Vdc
IDQ = 950 mA
f = 880 MHz
15
10
19
18
32 V
17
28 V
10
VDD = 24 V
0
300
14
1
20
Gps, POWER GAIN (dB)
25_C
85_C 60
ηD, DRAIN EFFICIENCY (%)
70
20
Gps, POWER GAIN (dB)
21
80
Gps
100
16
0
40
80
120
160
200
240
Pout, OUTPUT POWER (WATTS) CW
Pout, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
Figure 12. Power Gain versus Output Power
280
MTTF (HOURS)
108
107
106
105
90
110
130
150
170
190
210
230
250
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device is
operated at VDD = 28 Vdc, Pout = 27 W Avg., and ηD = 31%.
MTTF calculator available at http://www.freescale.com/rf. Select Tools
(Software & Tools)/Calculators to access MTTF calculators by product.
Figure 13. MTTF versus Junction Temperature
MRFE6S9125NR1 MRFE6S9125NBR1
8
RF Device Data
Freescale Semiconductor
N - CDMA TEST SIGNAL
100
−10
−20
−30
1
−40
−50
0.1
(dB)
PROBABILITY (%)
10
IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8
Through 13) 1.2288 MHz Channel Bandwidth
Carriers. ACPR Measured in 30 kHz Bandwidth @
±750 kHz Offset. ALT1 Measured in 30 kHz
Bandwidth @ ±1.98 MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
0.01
0.001
−60
−70
−80
−90
0.0001
0
2
4
6
8
10
1.2288 MHz
Channel BW
.. ..................................................
. . . .
............
..
..
..
..
..
..
.
..
..
..
.
.
−ALT1 in 30 kHz
+ALT1 in 30 kHz
..
.
.
Integrated BW
Integrated BW
... .
...............
.........
..........
.....
..........
.
. ................
...... ... ..
.
.
.
.
.
.
.
..............
.................
.........
...........
...
......
......
.........
..........
.
.
.
.
.
.
.
.
.
.........
......
.
.
.
....... −ACPR in 30 kHz +ACPR in 30 kHz ..................
.
.
.
.
..
....
.
.
............
.......
...............
.
........
.
................
...
.
.
.
.
.
Integrated BW
Integrated BW
........
...........
......
..........
......
...
...........
−100
PEAK−TO−AVERAGE (dB)
Figure 14. Single - Carrier CCDF N - CDMA
−110
−3.6 −2.9 −2.2
−1.5 −0.7
0
0.7
1.5
2.2
2.9
3.6
f, FREQUENCY (MHz)
Figure 15. Single - Carrier N - CDMA Spectrum
MRFE6S9125NR1 MRFE6S9125NBR1
RF Device Data
Freescale Semiconductor
9
f = 900 MHz
Zload
f = 860 MHz
Zo = 5 Ω
Zsource
f = 900 MHz
f = 860 MHz
VDD = 28 Vdc, IDQ = 950 mA, Pout = 27 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
860
0.62 - j2.13
1.48 - j0.14
865
0.64 - j2.31
1.56 - j0.09
870
0.62 - j2.45
1.66 - j0.02
875
0.59 - j2.43
1.73 + j0.04
880
0.57 - j2.42
1.74 + j0.11
885
0.54 - j2.36
1.68 + j0.19
890
0.57 - j2.18
1.61 + j0.25
895
0.58 - j1.94
1.52 + j0.33
900
0.59 - j1.86
1.48 + j0.37
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 16. Series Equivalent Source and Load Impedance
MRFE6S9125NR1 MRFE6S9125NBR1
10
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
MRFE6S9125NR1 MRFE6S9125NBR1
RF Device Data
Freescale Semiconductor
11
MRFE6S9125NR1 MRFE6S9125NBR1
12
RF Device Data
Freescale Semiconductor
MRFE6S9125NR1 MRFE6S9125NBR1
RF Device Data
Freescale Semiconductor
13
MRFE6S9125NR1 MRFE6S9125NBR1
14
RF Device Data
Freescale Semiconductor
MRFE6S9125NR1 MRFE6S9125NBR1
RF Device Data
Freescale Semiconductor
15
MRFE6S9125NR1 MRFE6S9125NBR1
16
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
• AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over - Molded Plastic Packages
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
0
Oct. 2007
Description
• Initial Release of Data Sheet
MRFE6S9125NR1 MRFE6S9125NBR1
RF Device Data
Freescale Semiconductor
17
How to Reach Us:
Home Page:
www.freescale.com
Web Support:
http://www.freescale.com/support
USA/Europe or Locations Not Listed:
Freescale Semiconductor, Inc.
Technical Information Center, EL516
2100 East Elliot Road
Tempe, Arizona 85284
+1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130
www.freescale.com/support
Europe, Middle East, and Africa:
Freescale Halbleiter Deutschland GmbH
Technical Information Center
Schatzbogen 7
81829 Muenchen, Germany
+44 1296 380 456 (English)
+46 8 52200080 (English)
+49 89 92103 559 (German)
+33 1 69 35 48 48 (French)
www.freescale.com/support
Japan:
Freescale Semiconductor Japan Ltd.
Headquarters
ARCO Tower 15F
1 - 8 - 1, Shimo - Meguro, Meguro - ku,
Tokyo 153 - 0064
Japan
0120 191014 or +81 3 5437 9125
support.japan@freescale.com
Asia/Pacific:
Freescale Semiconductor Hong Kong Ltd.
Technical Information Center
2 Dai King Street
Tai Po Industrial Estate
Tai Po, N.T., Hong Kong
+800 2666 8080
support.asia@freescale.com
For Literature Requests Only:
Freescale Semiconductor Literature Distribution Center
P.O. Box 5405
Denver, Colorado 80217
1 - 800 - 441 - 2447 or 303 - 675 - 2140
Fax: 303 - 675 - 2150
LDCForFreescaleSemiconductor@hibbertgroup.com
Information in this document is provided solely to enable system and software
implementers to use Freescale Semiconductor products. There are no express or
implied copyright licenses granted hereunder to design or fabricate any integrated
circuits or integrated circuits based on the information in this document.
Freescale Semiconductor reserves the right to make changes without further notice to
any products herein. Freescale Semiconductor makes no warranty, representation or
guarantee regarding the suitability of its products for any particular purpose, nor does
Freescale Semiconductor assume any liability arising out of the application or use of
any product or circuit, and specifically disclaims any and all liability, including without
limitation consequential or incidental damages. “Typical” parameters that may be
provided in Freescale Semiconductor data sheets and/or specifications can and do
vary in different applications and actual performance may vary over time. All operating
parameters, including “Typicals”, must be validated for each customer application by
customer’s technical experts. Freescale Semiconductor does not convey any license
under its patent rights nor the rights of others. Freescale Semiconductor products are
not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life,
or for any other application in which the failure of the Freescale Semiconductor product
could create a situation where personal injury or death may occur. Should Buyer
purchase or use Freescale Semiconductor products for any such unintended or
unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all
claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such
unintended or unauthorized use, even if such claim alleges that Freescale
Semiconductor was negligent regarding the design or manufacture of the part.
Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc.
All other product or service names are the property of their respective owners.
© Freescale Semiconductor, Inc. 2007. All rights reserved.
MRFE6S9125NR1 MRFE6S9125NBR1
Document Number: MRFE6S9125N
Rev. 0, 10/2007
18
RF Device Data
Freescale Semiconductor