Data Sheet

Freescale Semiconductor
Technical Data
Document Number: MRF8S9170N
Rev. 1, 5/2010
RF Power Field Effect Transistor
N--Channel Enhancement--Mode Lateral MOSFET
MRF8S9170NR3
Designed for CDMA base station applications with frequencies from 920 to
960 MHz. Can be used in Class AB and Class C for all typical cellular base
station modulation formats.
• Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ =
1000 mA, Pout = 50 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
920 MHz
19.3
36.5
6.0
--36.6
940 MHz
19.1
36.1
6.1
--36.7
960 MHz
18.9
36.0
6.0
--36.1
920--960 MHz, 50 W AVG., 28 V
SINGLE W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFET
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 250 Watts CW
Output Power (3 dB Input Overdrive from Rated Pout), Designed for
Enhanced Ruggedness
• Typical Pout @ 1 dB Compression Point ≃ 177 Watts CW
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C Operation
• Designed for Digital Predistortion Error Correction Systems
• Optimized for Doherty Applications
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.
CASE 2021--03, STYLE 1
OM--780--2
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +70
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
--65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
Symbol
Value (2,3)
Unit
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 78°C, 50 W CW, 28 Vdc, IDQ = 1000 mA
Case Temperature 82°C, 170 W CW, 28 Vdc, IDQ = 1000 mA
RθJC
0.38
0.33
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
© Freescale Semiconductor, Inc., 2009--2010. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF8S9170NR3
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2 (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
Package Peak Temperature
Unit
3
260
°C
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 70 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 355 μAdc)
VGS(th)
1.5
2.3
3
Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 1000 mAdc, Measured in Functional Test)
VGS(Q)
2.3
3.1
3.8
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 2.9 Adc)
VDS(on)
0.1
0.19
0.3
Vdc
Characteristic
Off Characteristics
On Characteristics
Functional Tests (1) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1000 mA, Pout = 50 W Avg., f = 920 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Power Gain
Gps
18.0
19.3
21.0
dB
Drain Efficiency
ηD
34.0
36.5
—
%
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
PAR
5.5
6.0
—
dB
ACPR
—
--36.6
--34.5
dBc
IRL
—
--10
--7
dB
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1000 mA, Pout = 50 W Avg.,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
920 MHz
19.3
36.5
6.0
--36.6
--10
940 MHz
19.1
36.1
6.1
--36.7
--12
960 MHz
18.9
36.0
6.0
--36.1
--16
1. Part internally matched both on input and output.
(continued)
MRF8S9170NR3
2
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1000 mA, 920--960 MHz Bandwidth
Pout @ 1 dB Compression Point, CW
P1dB
—
177
—
—
17
—
W
IMD Symmetry @ 160 W PEP, Pout where IMD Third Order
Intermodulation  30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres
—
50
—
MHz
Gain Flatness in 40 MHz Bandwidth @ Pout = 50 W Avg.
GF
—
0.32
—
dB
Gain Variation over Temperature
(--30°C to +85°C)
∆G
—
0.01
—
dB/°C
∆P1dB
—
0.01
—
dBm/°C
Output Power Variation over Temperature
(--30°C to +85°C)
MHz
MRF8S9170NR3
RF Device Data
Freescale Semiconductor
3
C28
B1
C6
C7
C20 C22
C24 C26
C5
C4
R2
C9
C12 C14
C1*
C2
C3
CUT OUT AREA
R1
C18
C8
C17*
C11 C13
C16
C15
C10
C19
C21 C23
C25 C27
MRF8S9170N
Rev. 0
*C1 and C17 are mounted vertically.
Figure 1. MRF8S9170NR3 Test Circuit Component Layout
Table 6. MRF8S9170NR3 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1
Short Ferrite Bead
2743019447
Fair--Rite
C1, C8, C17, C18, C19,
C20, C21
39 pF Chip Capacitors
ATC100B390JT500XT
ATC
C2
2.0 pF Chip Capacitor
ATC100B2R0BT500XT
ATC
C3, C4
3.3 pF Chip Capacitors
ATC100B3R3CT500XT
ATC
C5
100 μF, 50 V Electrolytic Capacitor
476KXM063M
Illinois Cap
C6
3.3. μF, 100 V Chip Capacitor
C4532JB1H335KT
TDK
C7, C22, C23
0.1 μF Chip Capacitors
C3216X7R2E104KT
TDK
C9, C10
6.8 pF Chip Capacitors
ATC100B6R8CT500XT
ATC
C11, C12
6.2 pF Chip Capacitors
ATC100B6R2BT500XT
ATC
C13, C14
5.6 pF Chip Capacitors
ATC100B5R6CT500XT
ATC
C15
4.7 pF Chip Capacitor
ATC100B4R7CT500XT
ATC
C16
2.2 pF Chip Capacitor
ATC100B2R2JT500XT
ATC
C24, C25, C26, C27
22 μF, 50 V Chip Capacitors
C5750JF1H226ZT
TDK
C28
470 μF, 63 V Electrolytic Capacitor
KME63VB471M12x25LL
Chemi--Con
R1
2 KΩ, 1/4 W Chip Resistor
CRCW12062K00FKEA
Vishay
R2
5.1 Ω, 1/4 W Chip Resistor
CRCW12065R10FKEA
Vishay
PCB
0.030″, εr = 3.5
RF--35
Taconic
MRF8S9170NR3
4
RF Device Data
Freescale Semiconductor
VDD = 28 Vdc, Pout = 50 W (Avg.), IDQ = 1000 mA
Single--Carrier W--CDMA, 3.85 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB
@ 0.01% Probability on CCDF
19.4
Gps
19.2
42
40
38
36
19
--27
PARC
18.8
18.6
--29
--31
IRL
18.4
18.2
18
820
--33
--35
ACPR
840
860
880
900
ACPR (dBc)
Gps, POWER GAIN (dB)
19.6
44
--37
920
940
960
0
--5
--10
--15
--20
980
--1.5
--2
--2.5
--3
PARC (dB)
ηD
19.8
IRL, INPUT RETURN LOSS (dB)
20
ηD, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS
--3.5
--4
f, FREQUENCY (MHz)
IMD, INTERMODULATION DISTORTION (dBc)
Figure 2. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ Pout = 50 Watts Avg.
--5
--10
--15
VDD = 28 Vdc, Pout = 160 W (PEP), IDQ = 1000 mA
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 940 MHz
--20
--25
IM3--U
--30
--35
IM3--L
IM5--U
--40
--45
--50
IM5--L
IM7--U
--55
--60
--65
IM7--L
1
10
100
TWO--TONE SPACING (MHz)
20
0
19
18
17
16
15
VDD = 28 Vdc, IDQ = 1000 mA, f = 940 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel
Bandwidth, Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
ACPR
80
--15
70
--20
60
--1
ηD
--2 --1 dB = 40 W
Gps
--2 dB = 58.4 W
--3
50
40
PARC
--4
--5
--3 dB = 79.1 W
20
40
60
80
100
120
140
--25
--30
ACPR (dBc)
1
ηD, DRAIN EFFICIENCY (%)
21
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
Gps, POWER GAIN (dB)
Figure 3. Intermodulation Distortion Products
versus Two--Tone Spacing
--35
30
--40
20
--45
160
Pout, OUTPUT POWER (WATTS)
Figure 4. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
MRF8S9170NR3
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
940 MHz
960 MHz
f = 920 MHz
20
940 MHz
VDD = 28 Vdc, IDQ = 1000 mA
Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @
0.01% Probability on CCDF
14
ACPR
12
60
--25
40
940 MHz
16 920 MHz
--20
50
Gps
18
70
960 MHz
10
100
30
20
10
200
--30
--35
--40
ACPR (dBc)
920 MHz
22
Gps, POWER GAIN (dB)
ηD
ηD, DRAIN EFFICIENCY (%)
24
--45
--50
Pout, OUTPUT POWER (WATTS) AVG.
Figure 5. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
0
24
16
--10
12
--15
8
--20
4
VDD = 28 Vdc
Pin = 0 dBm
IDQ = 1000 mA
0
IRL
--4
--8
600
800
IRL (dB)
GAIN (dB)
--5
Gain
20
--25
--30
--35
--40
1200
1000
f, FREQUENCY (MHz)
Figure 6. Broadband Frequency Response
W--CDMA TEST SIGNAL
100
10
0
--10
Input Signal
--30
0.1
0.01
W--CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
0.001
0.0001
3.84 MHz
Channel BW
--20
1
(dB)
PROBABILITY (%)
10
0
1
2
3
4
5
6
--40
--50
--60
+ACPR in 3.84 MHz
Integrated BW
--ACPR in 3.84 MHz
Integrated BW
--70
--80
7
8
9
PEAK--TO--AVERAGE (dB)
Figure 7. CCDF W--CDMA IQ Magnitude
Clipping, Single--Carrier Test Signal
10
--90
--100
--9
--7.2 --5.4
--3.6 --1.8
0
1.8
3.6
5.4
7.2
9
f, FREQUENCY (MHz)
Figure 8. Single--Carrier W--CDMA Spectrum
MRF8S9170NR3
6
RF Device Data
Freescale Semiconductor
VDD = 28 Vdc, IDQ = 1000 mA, Pout = 50 W Avg.
f
MHz
Zsource
Ω
820
2.34 -- j3.90
2.08 -- j1.11
840
2.51 -- j3.75
2.07 -- j1.05
860
2.54 -- j3.77
2.01 -- j1.09
880
2.37 -- j3.71
1.81 -- j1.11
900
2.26 -- j3.50
1.58 -- j1.02
920
2.27 -- j3.33
1.43 -- j0.89
940
2.28 -- j3.26
1.27 -- j0.77
960
2.24 -- j3.19
1.10 -- j0.64
980
2.21 -- j3.10
0.94 -- j0.47
Zload
Ω
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured from
drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 9. Series Equivalent Source and Load Impedance
MRF8S9170NR3
RF Device Data
Freescale Semiconductor
7
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
VDD = 28 Vdc, IDQ = 909 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle
58
Ideal
Pout, OUTPUT POWER (dBm)
57
f = 920 MHz
56
55
Actual
f = 920 MHz
54
53
f = 960 MHz
f = 940 MHz
f = 940 MHz
52
51
50
30
31
32
33
34
36
35
37
38
Pin, INPUT POWER (dBm)
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
P1dB
P3dB
f
(MHz)
Watts
dBm
920
229
940
217
960
205
Watts
dBm
53.6
285
54.6
53.6
269.2
54.3
53.1
259
54.1
Test Impedances per Compression Level
f
(MHz)
Zsource
Ω
Zload
Ω
920
P1dB
4.6 -- j2.8
0.8 -- j1.6
940
P1dB
4.7 -- j2.1
0.8 -- j1.6
960
P1dB
5.2 -- j3.4
1.0 -- j1.7
Figure 10. Pulsed CW Output Power
versus Input Power @ 28 V
MRF8S9170NR3
8
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
MRF8S9170NR3
RF Device Data
Freescale Semiconductor
9
MRF8S9170NR3
10
RF Device Data
Freescale Semiconductor
MRF8S9170NR3
RF Device Data
Freescale Semiconductor
11
PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE
Refer to the following documents, tools and software to aid your design process.
Application Notes
• AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
• AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
• RF High Power Model
• .s2p File
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Sept. 2009
• Initial Release of Data Sheet
1
May 2010
• Replaced Case Outline 2021--02, Issue A, with 2021--03, Issue B, p. 1, 9--11. Added 4 exposed source
tabs at dimension e1 on Sheets 1 and 2. Added dimension e1 0.721″--0.729″ (18.31--18.52 mm) in the
table, revised D1 minimum dimension from 0.730″ (18.54 mm) to 0.720″ (18.29 mm), revised dimension E2
from 0.312″ (7.92 mm) to 0.306″ (7.77 mm), and revised wording of Note 8 on Sheet 3.
• Changed Human Body Model ESD rating from Class 1C to Class 2 to reflect recent ESD test results of the
device, p. 2
MRF8S9170NR3
12
RF Device Data
Freescale Semiconductor
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MRF8S9170NR3
Document
Number:
RF
Device
Data MRF8S9170N
Rev. 1, 5/2010
Freescale
Semiconductor
13