Data Sheet

Document Number: MRF8S9202N
Rev. 1, 2/2012
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
MRF8S9202NR3
MRF8S9202GNR3
Designed for CDMA base station applications with frequencies from 920 to 960
MHz. Can be used in Class AB and Class C for all typical cellular base station
modulation formats.
• Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ =
1300 mA, Pout = 58 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth =
3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
920 MHz
19.0
36.3
6.3
--38.2
940 MHz
19.1
37.2
6.2
--38.0
960 MHz
18.9
37.3
6.1
--37.1
920--960 MHz, 58 W AVG., 28 V
SINGLE W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFETs
• Capable of Handling 7:1 VSWR, @ 32 Vdc, 920 MHz, 290 Watts CW Output
Power (3 dB Input Overdrive from Rated Pout). Designed for
Enhanced Ruggedness.
• Typical Pout @ 1 dB Compression Point ≃ 200 Watts CW
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C Operation
• Designed for Digital Predistortion Error Correction Systems
• Optimized for Doherty Applications
• 225°C Capable Plastic Package
• In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13 inch Reel.
CASE 2021--03, STYLE 1
OM--780--2
PLASTIC
MRF8S9202NR3
CASE 2267--01
OM--780--2 GULL
PLASTIC
MRF8S9202GNR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +70
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
--65 to +150
°C
TC
150
°C
TJ
225
°C
Symbol
Value (2,3)
Unit
Case Operating Temperature
Operating Junction Temperature
(1,2)
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 58 W CW, 28 Vdc, IDQ = 1300 mA, 920 MHz
Case Temperature 90°C, 200 W CW, 28 Vdc, IDQ = 1300 mA, 920 MHz
RθJC
0.31
0.27
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
© Freescale Semiconductor, Inc., 2010, 2012. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
MRF8S9202NR3 MRF8S9202GNR3
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2
Machine Model (per EIA/JESD22--A115)
A
Charge Device Model (per JESD22--C101)
IV
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
Package Peak Temperature
Unit
3
260
°C
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 70 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 800 μAdc)
VGS(th)
1.5
2.3
3.0
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 1300 mAdc)
VGS(Q)
—
3.1
—
Vdc
Fixture Gate Quiescent Voltage (1)
(VDD = 28 Vdc, ID = 1300 mAdc, Measured in Functional Test)
VGG(Q)
4.6
6.2
7.6
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 3.3 Adc)
VDS(on)
0.1
0.2
0.3
Vdc
Characteristic
Off Characteristics
On Characteristics
Functional Tests (2,3) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1300 mA, Pout = 58 W Avg., f = 920 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Power Gain
Gps
18.0
19.0
21.0
dB
Drain Efficiency
ηD
34.5
36.3
—
%
PAR
6.0
6.3
—
dB
ACPR
—
--38.2
--35.0
dBc
IRL
—
--13
--9
dB
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1300 mA, Pout = 58 W Avg.,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
920 MHz
19.0
36.3
6.3
--38.2
--13
940 MHz
19.1
37.2
6.2
--38.0
--15
960 MHz
18.9
37.3
6.1
--37.1
--15
1. VGG = 2 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
schematic.
2. Part internally matched both on input and output.
3. Measurement made with device in straight lead configuration before any lead forming operation is applied.
(continued)
MRF8S9202NR3 MRF8S9202GNR3
2
RF Device Data
Freescale Semiconductor, Inc.
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1300 mA, 920--960 MHz Bandwidth
Pout @ 1 dB Compression Point, CW
P1dB
—
200
—
—
7.5
—
W
IMD Symmetry @ 180 W PEP, Pout where IMD Third Order
Intermodulation  30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres
—
70
—
MHz
Gain Flatness in 40 MHz Bandwidth @ Pout = 58 W Avg.
GF
—
0.3
—
dB
Gain Variation over Temperature
(--30°C to +85°C)
∆G
—
0.02
—
dB/°C
∆P1dB
—
0.006
—
dB/°C
Output Power Variation over Temperature
(--30°C to +85°C)
MHz
MRF8S9202NR3 MRF8S9202GNR3
RF Device Data
Freescale Semiconductor, Inc.
3
C2
R1
C10
R2
C3
R3
C9
C4
C5
C17
C8
C15
C13
C16
C12
C14
C18
C6
C7
C11
C1
MRF8S9202N
Rev. 0
Figure 1. MRF8S9202NR3(GNR3) Test Circuit Component Layout
Table 6. MRF8S9202NR3(GNR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C2
220 μF, 63 V Electrolytic Capacitors
222212018221
Vishay BC
C3, C4, C5, C6, C7
10 μF, 50 V Chip Capacitors
C5750X5R1H106MT
TDK
C8
2.7 pF Chip Capacitor
ATC100B2R7BT500XT
ATC
C9, C10, C11, C12
47 pF Chip Capacitors
ATC100B470JT500XT
ATC
C13, C14
1.2 pF Chip Capacitors
ATC100B1R2BT500XT
ATC
C15
2 pF Chip Capacitor
ATC100B2R0BT500XT
ATC
C16
4.3 pF Chip Capacitor
ATC100B4R3BT500XT
ATC
C17, C18
3.3 pF Chip Capacitors
ATC100B3R3BT500XT
ATC
R1, R2
1 KΩ, 1/8 W Chip Resistors
WCR08051KG
Welwyn
R3
10 Ω, 1/8 W Chip Resistor
232273461009L
Phycomp
PCB
0.020″, εr = 3.5
RO4350B
Rogers
MRF8S9202NR3 MRF8S9202GNR3
4
RF Device Data
Freescale Semiconductor, Inc.
35
Gps, POWER GAIN (dB)
20
19.5
Gps
19
30
25
18
ACPR --36
--38
17.5
--40
18.5
IRL
17
16.5
16
820
Input Signal PAR = 7.5 dB
@ 0.01% Probability on CCDF
840
860
880
900
--42
PARC --44
920
940
--4
--46
980
960
--8
--12
--16
--20
--24
--0.6
--0.8
--1
--1.2
--1.4
PARC (dB)
40
hD
IRL, INPUT RETURN LOSS (dB)
45
VDD = 28 Vdc, Pout = 58 W (Avg.), IDQ = 1300 mA
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
20.5
ACPR (dBc)
21
ηD, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS
--1.6
f, FREQUENCY (MHz)
IMD, INTERMODULATION DISTORTION (dBc)
Figure 2. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ Pout = 58 Watts Avg.
--10
VDD = 28 Vdc, Pout = 180 W (PEP), IDQ = 1300 mA
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 940 MHz
--20
--30
IM3--L
IM5--U
--40
IM7--L
--50
IM3--U
IM5--L
IM7--U
--60
1
10
100
TWO--TONE SPACING (MHz)
19.5
0
19
18.5
18
17.5
17
ACPR
--1
--1 dB = 49 W
--2 dB = 69 W
--3
PARC
VDD = 28 Vdc, IDQ = 1300 mA, f = 940 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
--4
--5
Gps
--3 dB = 95 W
30
50
70
90
--20
60
--25
50
hD
--2
70
110
40
30
--30
--35
ACPR (dBc)
1
ηD, DRAIN EFFICIENCY (%)
20
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
Gps, POWER GAIN (dB)
Figure 3. Intermodulation Distortion Products
versus Two--Tone Spacing
--40
20
--45
10
--50
130
Pout, OUTPUT POWER (WATTS)
Figure 4. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
MRF8S9202NR3 MRF8S9202GNR3
RF Device Data
Freescale Semiconductor, Inc.
5
TYPICAL CHARACTERISTICS
18
17
920 MHz
50
--10
30
920 MHz
16
940 MHz
960 MHz
15
1
0
40
ACPR
960 MHz
940 MHz
60
10
100
20
10
0
200
--20
--30
--40
ACPR (dBc)
VDD = 28 Vdc, IDQ = 1300 mA, Single--Carrier
W--CDMA, 3.84 MHz Channel Bandwidth
20 Input Signal PAR = 7.5 dB @ 0.01%
Gps
Probability on CCDF
19
hD
ηD, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
21
--50
--60
Pout, OUTPUT POWER (WATTS) AVG.
Figure 5. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
0
24
Gain
--3
16
--6
12
--9
IRL
8
--12
VDD = 28 Vdc
Pin = 0 dBm
IDQ = 1300 mA
4
0
600
700
800
900
IRL (dB)
GAIN (dB)
20
--15
1000
1100
1200
1300
--18
1400
f, FREQUENCY (MHz)
Figure 6. Broadband Frequency Response
W--CDMA TEST SIGNAL
100
10
0
--10
Input Signal
--30
0.1
0.01
W--CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
0.001
0.0001
3.84 MHz
Channel BW
--20
1
(dB)
PROBABILITY (%)
10
0
1
2
3
4
5
6
--40
--50
--60
+ACPR in 3.84 MHz
Integrated BW
--ACPR in 3.84 MHz
Integrated BW
--70
--80
7
8
9
PEAK--TO--AVERAGE (dB)
Figure 7. CCDF W--CDMA IQ Magnitude
Clipping, Single--Carrier Test Signal
10
--90
--100
--9
--7.2 --5.4
--3.6 --1.8
0
1.8
3.6
5.4
7.2
9
f, FREQUENCY (MHz)
Figure 8. Single--Carrier W--CDMA Spectrum
MRF8S9202NR3 MRF8S9202GNR3
6
RF Device Data
Freescale Semiconductor, Inc.
VDD = 28 Vdc, IDQ = 1300 mA, Pout = 58 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
820
1.46 -- j3.27
2.14 -- j2.57
840
1.62 -- j3.12
2.08 -- j2.30
860
1.80 -- j3.01
2.05 -- j2.05
880
2.00 -- j2.95
2.05 -- j1.82
900
2.20 -- j2.95
2.06 -- j1.60
920
2.38 -- j3.00
2.09 -- j1.38
940
2.52 -- j3.12
2.14 -- j1.18
960
2.62 -- j3.29
2.21 -- j0.98
980
2.63 -- j3.49
2.30 -- j0.81
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured from
drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 9. Series Equivalent Source and Load Impedance
MRF8S9202NR3 MRF8S9202GNR3
RF Device Data
Freescale Semiconductor, Inc.
7
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
VDD = 28 Vdc, IDQ = 1150 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle
60.5
Pout, OUTPUT POWER (dBm)
59
Ideal
57.5
Actual
56
54.5
53
960 MHz
940 MHz
51.5
920 MHz
50
48.5
940 MHz
47
920 MHz
960 MHz
45.5
44
27
28.5 30
31.5 33
34.5
36
37.5
39 40.5
42
43.5
Pin, INPUT POWER (dBm)
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
P1dB
P3dB
f
(MHz)
Watts
dBm
Watts
dBm
920
298
54.7
362
55.6
940
290
54.6
358
55.5
960
283
54.5
352
55.5
Test Impedances per Compression Level
f
(MHz)
Zsource
Ω
Zload
Ω
920
P1dB
1.66 -- j3.06
4.27 -- j0.73
940
P1dB
2.08 -- j3.44
4.57 + j0.04
960
P1dB
2.86 -- j3.13
4.40 + j0.94
Figure 10. Pulsed CW Output Power
versus Input Power @ 28 V
MRF8S9202NR3 MRF8S9202GNR3
8
RF Device Data
Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
MRF8S9202NR3 MRF8S9202GNR3
RF Device Data
Freescale Semiconductor, Inc.
9
MRF8S9202NR3 MRF8S9202GNR3
10
RF Device Data
Freescale Semiconductor, Inc.
MRF8S9202NR3 MRF8S9202GNR3
RF Device Data
Freescale Semiconductor, Inc.
11
MRF8S9202NR3 MRF8S9202GNR3
12
RF Device Data
Freescale Semiconductor, Inc.
MRF8S9202NR3 MRF8S9202GNR3
RF Device Data
Freescale Semiconductor, Inc.
13
MRF8S9202NR3 MRF8S9202GNR3
14
RF Device Data
Freescale Semiconductor, Inc.
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents and software to aid your design process.
Application Notes
• AN1907: Solder Reflow Attach Method for High Power RF Devices in Over--Molded Plastic Packages
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
• AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
• RF High Power Model
• .s2p File
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Dec. 2010
• Initial Release of Data Sheet
1
Feb. 2012
• Added part number MRF8S9202GNR3, p. 1
• Added 2267--01 (OM--780--2 Gull) package isometric, p. 1, and Mechanical Outline, p. 12--14
MRF8S9202NR3 MRF8S9202GNR3
RF Device Data
Freescale Semiconductor, Inc.
15
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MRF8S9202NR3 MRF8S9202GNR3
Document Number: MRF8S9202N
Rev. 1, 2/2012
16
RF Device Data
Freescale Semiconductor, Inc.