Data Sheet

Freescale Semiconductor
Technical Data
Document Number: MRF8S9220H
Rev. 0, 11/2009
RF Power Field Effect Transistors
MRF8S9220HR3
MRF8S9220HSR3
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 920 to
960 MHz. Can be used in Class AB and Class C for all typical cellular base
station modulation formats.
• Typical Single- Carrier W - CDMA Performance: VDD = 28 Volts, IDQ =
1600 mA, Pout = 65 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on
CCDF.
Frequency
Gps
(dB)
hD
(%)
Output PAR
(dB)
ACPR
(dBc)
920 MHz
19.7
35.1
6.1
- 37.4
940 MHz
19.8
35.3
6.2
- 37.5
960 MHz
19.4
35.7
6.1
- 37.4
920 - 960 MHz, 65 W AVG., 28 V
SINGLE W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 317 Watts CW
Output Power (3 dB Input Overdrive from Rated Pout), Designed for
Enhanced Ruggedness
• Typical Pout @ 1 dB Compression Point ] 220 Watts CW
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
and Common Source S - Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate - Source Voltage Range for Improved Class C
Operation
• Designed for Digital Predistortion Error Correction Systems
• Optimized for Doherty Applications
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
CASE 465 - 06, STYLE 1
NI - 780
MRF8S9220HR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF8S9220HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain- Source Voltage
VDSS
- 0.5, +70
Vdc
Gate- Source Voltage
VGS
- 6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
Symbol
Value (2,3)
Unit
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 81‘°C, 65 W CW, 28 Vdc, IDQ = 1600 mA
Case Temperature 81°C, 220 W CW, 28 Vdc, IDQ = 1600 mA
RθJC
0.39
0.32
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2009. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF8S9220HR3 MRF8S9220HSR3
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1C (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 70 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate- Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 400 μAdc)
VGS(th)
1.5
2.2
3
Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 1600 mAdc, Measured in Functional Test)
VGS(Q)
2.3
3.1
3.8
Vdc
Drain- Source On - Voltage
(VGS = 10 Vdc, ID = 4 Adc)
VDS(on)
0.1
0.2
0.3
Vdc
Characteristic
Off Characteristics
On Characteristics
Functional Tests (1) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1600 mA, Pout = 65 W Avg., f = 960 MHz,
Single- Carrier W - CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Power Gain
Gps
18.0
19.4
21.0
dB
Drain Efficiency
ηD
34.0
35.7
—
%
PAR
5.7
6.1
—
dB
ACPR
—
- 37.4
- 35
dBc
IRL
—
- 13
-8
dB
Output Peak - to - Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1600 mA, Pout = 65 W Avg.,
Single- Carrier W - CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Frequency
Gps
(dB)
hD
(%)
Output PAR
(dB)
ACPR
(dB)
IRL
(dB)
920 MHz
19.7
35.1
6.1
- 37.4
- 13
940 MHz
19.8
35.3
6.2
- 37.5
- 24
960 MHz
19.4
35.7
6.1
- 37.4
- 13
1. Part internally matched both on input and output.
(continued)
MRF8S9220HR3 MRF8S9220HSR3
2
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1600 mA, 920 - 960 MHz Bandwidth
Pout @ 1 dB Compression Point, CW
P1dB
—
220
—
—
12
—
40
—
W
IMD Symmetry @ 200 W PEP, Pout where IMD Third Order
Intermodulation ` 30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres
—
Gain Flatness in 40 MHz Bandwidth @ Pout = 65 W Avg.
GF
—
0.3
—
dB
Gain Variation over Temperature
( - 30°C to +85°C)
ΔG
—
0.017
—
dB/°C
ΔP1dB
—
0.016
—
dBm/°C
Output Power Variation over Temperature
( - 30°C to +85°C)
MHz
MHz
MRF8S9220HR3 MRF8S9220HSR3
RF Device Data
Freescale Semiconductor
3
C30
R2
R3
C9
C10
C26 C28
C8
C22*
C24*
C7
R1
C16
C20
C1
C11
C2
C3
C4
C5
CUT OUT AREA
C18
C14
C17
C12
C13
C19
C15
C6
MRF8S9XXXH
Rev. 1
C21*
C25 C27
C23*
C29
*C21, C22, C23, and C24 are mounted vertically.
Figure 1. MRF8S9220HR3(HSR3) Test Circuit Component Layout
Table 5. MRF8S9220HR3(HSR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C8, C11, C23, C24
39 pF Chip Capacitors
ATC100B390JT500XT
ATC
C2
0.3 pF Chip Capacitor
ATC100B0R3BT500XT
ATC
C3, C12
1.0 pF Chip Capacitors
ATC100B1R0BT500XT
ATC
C4, C14
1.2 pF Chip Capacitors
ATC100B1R2BT500XT
ATC
C5
0.7 pF Chip Capacitor
ATC100B0R7BT500XT
ATC
C6, C7, C21, C22
10 pF Chip Capacitors
ATC100B100JT500XT
ATC
C9
2.2 μF, 50 V Chip Capacitor
C1825C225J5RAC- TU
Kemet
C10
47 μF, 50 V Electrolytic Capacitor
476KXM050M
Illinois Capacitor
C13
1.3 pF Chip Capacitor
ATC100B1R3BT500XT
ATC
C15, C16
5.1 pF Chip Capacitors
ATC100B5R1CT500XT
ATC
C17
5.6 pF Chip Capacitor
ATC100B5R6CT500XT
ATC
C18
6.2 pF Chip Capacitor
ATC100B6R2BT500XT
ATC
C19, C20
6.8 pF Chip Capacitors
ATC100B6R8CT500XT
ATC
C25, C26, C27, C28
10 μF, 50 V Chip Capacitors
GRM55DR61H106KA88L
Murata
C29, C30
470 μF, 63 V Electrolytic Capacitors
MCGPR63V477M13X26- RH
Multicomp
R1
0 Ω, 3 A Chip Resistor
CRCW12060000Z0EA
Vishay
R2
3.3 Ω, 1/2 W Chip Resistor
P3.3VCT- ND
Panasonic
R3
2.2 kΩ, 1/4 W Chip Resistor
CRCW12062K20FKEA
Vishay
PCB
0.030″, εr = 3.5
RF - 35
Taconic
MRF8S9220HR3 MRF8S9220HSR3
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
20
38
36
18.4
34
18
17.6
IRL
17.2
32
0
−31
−5
−33
−35
16.8
PARC
16.4
840
860
880
900
920
940
960
−15
−37
−20
−39
980
−25
ACPR
16
820
−10
−1.5
−2
−2.5
−3
PARC (dB)
Gps
IRL, INPUT RETURN LOSS (dB)
18.8
40
ACPR (dBc)
Gps, POWER GAIN (dB)
19.2
ηD, DRAIN
EFFICIENCY (%)
42
VDD = 28 Vdc, Pout = 65 W (Avg.)
IDQ = 1600 mA, Single−Carrier
W−CDMA
3.84 MHz Channel Bandwidth
ηD
Input Signal PAR = 7.5 dB @
0.01% Probability on CCDF
19.6
−3.5
−4
f, FREQUENCY (MHz)
IMD, INTERMODULATION DISTORTION (dBc)
Figure 2. Output Peak - to - Average Ratio Compression (PARC)
Broadband Performance @ Pout = 65 Watts Avg.
0
VDD = 28 Vdc, Pout = 200 W (PEP), IDQ = 1600 mA
Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 940 MHz
−10
−20
IM3−U
−30
IM3−L
IM5−U
−40
IM5−L
IM7−U
−50
IM7−L
−60
1
10
100
TWO−TONE SPACING (MHz)
Figure 3. Intermodulation Distortion Products
versus Two - Tone Spacing
20.5
1
60
−25
50
−30
19
18.5
18
17.5
ηD
−1
40
−1 dB = 59.8 W
−2
−3
−4
−5
30
−2 dB = 81.0 W
−3 dB = 110.1 W
Gps
30
PARC
20
VDD = 28 Vdc, IDQ = 1600 mA, f = 940 MHz
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
50
70
90
110
10
0
130
−35
−40
ACPR (dBc)
19.5
0
ηD, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
20
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
ACPR
−45
−50
−55
Pout, OUTPUT POWER (WATTS)
Figure 4. Output Peak - to - Average Ratio
Compression (PARC) versus Output Power
MRF8S9220HR3 MRF8S9220HSR3
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
920 MHz
Gps, POWER GAIN (dB)
20
940 MHz
Gps
920 MHz
960 MHz
19
VDD = 28 Vdc, IDQ = 1600 mA
Single−Carrier W−CDMA, 3.84 MHz
Channel Bandwidth, Input Signal
PAR = 7.5 dB @ 0.01%
Probability on CCDF
18
17
16
920 MHz
15
1
ηD
60
0
50
−10
40
30
ACPR
10
940 MHz
960 MHz
10
20
0
300
100
−20
ACPR (dBc)
960 MHz
940 MHz
ηD, DRAIN EFFICIENCY (%)
21
−30
−40
−50
−60
Pout, OUTPUT POWER (WATTS) AVG.
Figure 5. Single - Carrier W - CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
5
25
Gain
20
0
−5
IRL
10
−10
5
−15
VDD = 28 Vdc
Pin = 0 dBm
IDQ = 1600 mA
0
−5
600
700
800
IRL (dB)
GAIN (dB)
15
−20
900
1000
1100
1200
−25
1300
f, FREQUENCY (MHz)
Figure 6. Broadband Frequency Response
W - CDMA TEST SIGNAL
100
10
0
−10
3.84 MHz
Channel BW
−20
1
Input Signal
−30
0.1
(dB)
PROBABILITY (%)
10
0.01
W−CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
0.001
0.0001
0
1
2
3
4
5
6
−40
−50
−60
+ACPR in 3.84 MHz
Integrated BW
−ACPR in 3.84 MHz
Integrated BW
−70
−80
7
8
9
PEAK−TO−AVERAGE (dB)
Figure 7. CCDF W - CDMA IQ Magnitude
Clipping, Single - Carrier Test Signal
10
−90
−100
−9
−7.2 −5.4 −3.6 −1.8
0
1.8
3.6
5.4
7.2
9
f, FREQUENCY (MHz)
Figure 8. Single - Carrier W - CDMA Spectrum
MRF8S9220HR3 MRF8S9220HSR3
6
RF Device Data
Freescale Semiconductor
VDD = 28 Vdc, IDQ = 1600 mA, Pout = 65 W Avg.
f
MHz
Zsource
W
Zload
W
820
1.27 - j1.44
2.14 - j2.23
840
1.27 - j1.15
1.97 - j1.94
860
1.23 - j0.90
1.82 - j1.65
880
1.05 - j0.68
1.54 - j1.40
900
0.95 - j0.39
1.29 - j1.11
920
0.94 - j0.15
1.26 - j0.85
940
0.90 + j0.08
1.22 - j0.69
960
0.85 + j0.31
1.11 - j0.47
980
0.78 + j0.55
1.01 - j0.23
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured from
drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 9. Series Equivalent Source and Load Impedance
MRF8S9220HR3 MRF8S9220HSR3
RF Device Data
Freescale Semiconductor
7
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
VDD = 28 Vdc, IDQ = 1600 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle
60
Pout, OUTPUT POWER (dBm)
59
Ideal
58
57
920 MHz
Actual
56
940 MHz
55
920 MHz
54
960 MHz
53
940 MHz
52
960 MHz
51
50
49
29
30
31
32
33
34
35
36
38
37
39
40
Pin, INPUT POWER (dBm)
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
P1dB
P3dB
f
(MHz)
Watts
dBm
Watts
dBm
920
295
54.7
357
55.5
940
270
54.3
316
55.0
960
284
54.5
344
55.4
Test Impedances per Compression Level
f
(MHz)
Zsource
Ω
Zload
Ω
920
P1dB
0.630 - j1.26
0.791 - j1.16
940
P1dB
0.728 - j1.43
0.809 - j1.04
960
P1dB
0.886 - j1.68
0.853 - j1.28
Figure 10. Pulsed CW Output Power
versus Input Power @ 28 V
MRF8S9220HR3 MRF8S9220HSR3
8
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
MRF8S9220HR3 MRF8S9220HSR3
RF Device Data
Freescale Semiconductor
9
MRF8S9220HR3 MRF8S9220HSR3
10
RF Device Data
Freescale Semiconductor
MRF8S9220HR3 MRF8S9220HSR3
RF Device Data
Freescale Semiconductor
11
MRF8S9220HR3 MRF8S9220HSR3
12
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
• RF High Power Model
• .s2p File
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
0
Nov. 2009
Description
• Initial Release of Data Sheet
MRF8S9220HR3 MRF8S9220HSR3
RF Device Data
Freescale Semiconductor
13
How to Reach Us:
Home Page:
www.freescale.com
Web Support:
http://www.freescale.com/support
USA/Europe or Locations Not Listed:
Freescale Semiconductor, Inc.
Technical Information Center, EL516
2100 East Elliot Road
Tempe, Arizona 85284
1 - 800- 521- 6274 or +1 - 480- 768- 2130
www.freescale.com/support
Europe, Middle East, and Africa:
Freescale Halbleiter Deutschland GmbH
Technical Information Center
Schatzbogen 7
81829 Muenchen, Germany
+44 1296 380 456 (English)
+46 8 52200080 (English)
+49 89 92103 559 (German)
+33 1 69 35 48 48 (French)
www.freescale.com/support
Japan:
Freescale Semiconductor Japan Ltd.
Headquarters
ARCO Tower 15F
1 - 8 - 1, Shimo - Meguro, Meguro - ku,
Tokyo 153 - 0064
Japan
0120 191014 or +81 3 5437 9125
[email protected]
Asia/Pacific:
Freescale Semiconductor China Ltd.
Exchange Building 23F
No. 118 Jianguo Road
Chaoyang District
Beijing 100022
China
+86 10 5879 8000
[email protected]
For Literature Requests Only:
Freescale Semiconductor Literature Distribution Center
1 - 800- 441- 2447 or +1 - 303- 675- 2140
Fax: +1 - 303- 675- 2150
[email protected]
Information in this document is provided solely to enable system and software
implementers to use Freescale Semiconductor products. There are no express or
implied copyright licenses granted hereunder to design or fabricate any integrated
circuits or integrated circuits based on the information in this document.
Freescale Semiconductor reserves the right to make changes without further notice to
any products herein. Freescale Semiconductor makes no warranty, representation or
guarantee regarding the suitability of its products for any particular purpose, nor does
Freescale Semiconductor assume any liability arising out of the application or use of
any product or circuit, and specifically disclaims any and all liability, including without
limitation consequential or incidental damages. “Typical” parameters that may be
provided in Freescale Semiconductor data sheets and/or specifications can and do
vary in different applications and actual performance may vary over time. All operating
parameters, including “Typicals”, must be validated for each customer application by
customer’s technical experts. Freescale Semiconductor does not convey any license
under its patent rights nor the rights of others. Freescale Semiconductor products are
not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life,
or for any other application in which the failure of the Freescale Semiconductor product
could create a situation where personal injury or death may occur. Should Buyer
purchase or use Freescale Semiconductor products for any such unintended or
unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all
claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such
unintended or unauthorized use, even if such claim alleges that Freescale
Semiconductor was negligent regarding the design or manufacture of the part.
Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc.
All other product or service names are the property of their respective owners.
© Freescale Semiconductor, Inc. 2009. All rights reserved.
MRF8S9220HR3 MRF8S9220HSR3
Document Number: MRF8S9220H
Rev. 0, 11/2009
14
RF Device Data
Freescale Semiconductor