Data Sheet

Freescale Semiconductor
Technical Data
Document Number: MRF9030
Rev. 8, 9/2008
RF Power Field Effect Transistor
MRF9030LR1
Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device
make it ideal for large - signal, common - source amplifier applications in 26 volt
base station equipment.
• Typical Two - Tone Performance at 945 MHz, 26 Volts
Output Power — 30 Watts PEP
Power Gain — 19 dB
Efficiency — 41.5%
IMD — - 32.5 dBc
945 MHz, 30 W, 26 V
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFET
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts CW
Output Power
Features
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Excellent Thermal Stability
•
•
•
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal.
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
CASE 360B - 05, STYLE 1
NI - 360
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
VDSS
- 0.5, +68
Vdc
Gate - Source Voltage
VGS
- 0.5, + 15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
92
0.53
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
Symbol
Value
Unit
RθJC
1.9
°C/W
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
© Freescale Semiconductor, Inc., 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
Class
1 (Minimum)
M1 (Minimum)
NOT RECOMMENDED FOR NEW DESIGN
NOT RECOMMENDED FOR NEW DESIGN
N - Channel Enhancement - Mode Lateral MOSFET
MRF9030LR1
1
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 26 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 100 μAdc)
VGS(th)
2
2.9
4
Vdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 250 mAdc)
VGS(Q)
—
3.8
—
Vdc
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 0.7 Adc)
VDS(on)
—
0.19
0.4
Vdc
gfs
—
3
—
S
Input Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Ciss
—
49.5
—
pF
Output Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
26.5
—
pF
Reverse Transfer Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
1
—
pF
On Characteristics
Forward Transconductance
(VDS = 10 Vdc, ID = 2 Adc)
Dynamic Characteristics
(continued)
NOT RECOMMENDED FOR NEW DESIGN
NOT RECOMMENDED FOR NEW DESIGN
Off Characteristics
MRF9030LR1
2
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Two - Tone Common - Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
Gps
18
19
—
dB
Two - Tone Drain Efficiency
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
η
37
41.5
—
%
3rd Order Intermodulation Distortion
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
IMD
—
- 32.5
- 28
dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
IRL
—
- 15.5
-9
dB
Two - Tone Common - Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
Gps
—
19
—
dB
Two - Tone Drain Efficiency
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
η
—
41.5
—
%
3rd Order Intermodulation Distortion
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
IMD
—
- 33
—
dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
IRL
—
- 14
—
dB
Power Output, 1 dB Compression Point
(VDD = 26 Vdc, Pout = 30 W CW, IDQ = 250 mA,
f1 = 945.0 MHz)
P1dB
—
30
—
W
Common - Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 30 W CW, IDQ = 250 mA,
f1 = 945.0 MHz)
Gps
—
19
—
dB
Drain Efficiency
(VDD = 26 Vdc, Pout = 30 W CW, IDQ = 250 mA,
f1 = 945.0 MHz)
η
—
60
—
%
NOT RECOMMENDED FOR NEW DESIGN
NOT RECOMMENDED FOR NEW DESIGN
Functional Tests (In Freescale Test Fixture, 50 ohm system)
MRF9030LR1
RF Device Data
Freescale Semiconductor
3
B2
VDD
+
C8
C14
C5
L1
RF
INPUT
Z1
Z2
Z3
Z4
Z5
Z6
Z7
+
C15
C16
C17
L2
C9
DUT
+
Z8
Z9
Z10
Z11
Z12
Z13
RF
OUTPUT
C13
C1
C2
B1
B2
C1, C8, C13, C14
C2, C4
C3
C5, C6
C7, C15, C16
C9, C10
C11
C12
C17
L1, L2
Z1
Z2
C3
C4
C6
C10
Short Ferrite Bead
Long Ferrite Bead
47 pF Chip Capacitors
0.8 pF to 8.0 pF Trim Capacitors
3.9 pF Chip Capacitor
7.5 pF Chip Capacitors
10 μF, 35 V Tantalum Capacitors
10 pF Chip Capacitors
9.1 pF Chip Capacitor
0.6 pF to 4.5 pF Trim Capacitor
220 μF, 50 V Electrolytic Capacitor
12.5 nH Surface Mount Inductors
0.260″ x 0.060″ Microstrip
0.240″ x 0.060″ Microstrip
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
Z11
Z12
Z13
PCB
C11
C12
0.500″ x 0.100″ Microstrip
0.215″ x 0.270″ Microstrip
0.315″ x 0.270″ Microstrip
0.160″ x 0.270″ x 0.520″, Taper
0.285″ x 0.520″ Microstrip
0.450″ x 0.270″ Microstrip
0.140″ x 0.270″ Microstrip
0.250″ x 0.060″ Microstrip
0.720″ x 0.060″ Microstrip
0.490″ x 0.060″ Microstrip
0.290″ x 0.060″ Microstrip
Taconic RF - 35 - 0300, 30 mil,
εr = 3.55
Figure 1. 945 MHz Broadband Test Circuit Schematic
C7
C17
VDD
VGG
C8
C9
L1
RF INPUT
C1
C2
C14
C5
C15 C16
L2
C13
C3
C4 C6
CUT OUT AREA
NOT RECOMMENDED FOR NEW DESIGN
C7
+
C10
C11
RF OUTPUT
C12
MRF9030
900 MHz
Rev−02
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
NOT RECOMMENDED FOR NEW DESIGN
B1
VGG
Figure 2. 945 MHz Broadband Test Circuit Component Layout
MRF9030LR1
4
RF Device Data
Freescale Semiconductor
G ps , POWER GAIN (dB)
45
η
18
40
VDD = 26 Vdc
Pout = 30 W (PEP)
IDQ = 250 mA
Two−Tone, 100 kHz Tone Spacing
17
16
IMD
15
35
−30
−32
IRL
14
−34
13
−36
12
930
935
940
945
950
955
−38
960
−10
−12
−14
−16
−18
f, FREQUENCY (MHz)
G ps , POWER GAIN (dB)
19.5
IDQ = 375 mA
19
300 mA
18.5
250 mA
200 mA
18
17.5
VDD = 26 Vdc
f1 = 945 MHz, f2 = 945.1 MHz
17
1
10
VDD = 26 Vdc
f1 = 945 MHz, f2 = 945.1 MHz
−30
IDQ = 200 mA
−40
300 mA
250 mA
−50
375 mA
−60
10
1
100
100
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
Figure 4. Power Gain versus Output Power
Figure 5. Intermodulation Distortion versus
Output Power
22
0
VDD = 26 Vdc
IDQ = 250 mA
f1 = 945 MHz, f2 = 945.1 MHz
20
G ps , POWER GAIN (dB)
−10
−20
−20
−30
3rd Order
−40
−50
5th Order
7th Order
1
50
Gps
18
40
16
30
η
14
20
12
−60
−70
60
VDD = 26 Vdc
IDQ = 250 mA
f = 945 MHz
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Intermodulation Distortion Products
versus Output Power
10
0.1
10
0
1
10
100
η, DRAIN EFFICIENCY (%)
20
IMD, INTERMODULATION DISTORTION (dBc)
Figure 3. Class AB Broadband Circuit Performance
IMD, INTERMODULATION DISTORTION (dBc)
NOT RECOMMENDED FOR NEW DESIGN
19
NOT RECOMMENDED FOR NEW DESIGN
50
Gps
IRL, INPUT RETURN LOSS (dB)
20
η, DRAIN EFFICIENCY (%)
IMD, INTERMODULATION DISTORTION (dBc)
TYPICAL CHARACTERISTICS
Pout, OUTPUT POWER (WATTS) AVG.
Figure 7. Power Gain and Efficiency versus
Output Power
MRF9030LR1
RF Device Data
Freescale Semiconductor
5
60
Gps
NOT RECOMMENDED FOR NEW DESIGN
G ps , POWER GAIN (dB)
18
40
16
20
VDD = 26 Vdc
IDQ = 250 mA
f1 = 945 MHz, f2 = 945.1 MHz
η
14
12
10
0
−20
−40
IMD
8
−60
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 8. Power Gain, Efficiency and IMD
versus Output Power
MTTF FACTOR (HOURS X AMPS2)
1010
109
108
107
90 100 110 120 130 140 150 160 170 180 190 200 210
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
Figure 9. MTTF Factor versus Junction Temperature
NOT RECOMMENDED FOR NEW DESIGN
20
η, DRAIN EFFICIENCY (%)
IMD, INTERMODULATION DISTORTION (dBc)
TYPICAL CHARACTERISTICS
MRF9030LR1
6
RF Device Data
Freescale Semiconductor
Zsource
Zload
f = 930 MHz
f = 930 MHz
f = 960 MHz
f = 960 MHz
VDD = 26 V, IDQ = 250 mA, Pout = 30 W PEP
f
MHz
Zsource
Ω
Zload
Ω
930
1.34 - j0.1
3.175 + j0.09
945
1.36 - j0.2
3.1 + j0.08
960
1.4 - j0.14
3.0 + j0.05
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under Test
Input
Matching
Network
Z
source
Z
load
NOT RECOMMENDED FOR NEW DESIGN
NOT RECOMMENDED FOR NEW DESIGN
Zo = 5 Ω
Figure 10. Series Equivalent Source and Load Impedance
MRF9030LR1
RF Device Data
Freescale Semiconductor
7
PACKAGE DIMENSIONS
B
M
T A
M
B
M
NOTES:
1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
1
NOT RECOMMENDED FOR NEW DESIGN
3
B
(FLANGE)
2
D
bbb M T A
K
2X
2X
M
B
R
M
(LID)
ccc
N
(LID)
ccc
M
T A
M
B
M
T A
M
B
M
F
H
M
C
E
S
(INSULATOR)
T
M
(INSULATOR)
A
aaa
SEATING
PLANE
bbb
M
T A
M
B
M
T A
M
B
M
DIM
A
B
C
D
E
F
G
H
K
M
N
Q
R
S
aaa
bbb
ccc
INCHES
MIN
MAX
0.795
0.805
0.225
0.235
0.125
0.175
0.210
0.220
0.055
0.065
0.004
0.006
0.562 BSC
0.077
0.087
0.220
0.250
0.355
0.365
0.357
0.363
0.125
0.135
0.227
0.233
0.225
0.235
0.005 REF
0.010 REF
0.015 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
M
A
CASE 360B - 05
ISSUE G
NI - 360
MRF9030LR1
MILLIMETERS
MIN
MAX
20.19
20.45
5.72
5.97
3.18
4.45
5.33
5.59
1.40
1.65
0.10
0.15
14.28 BSC
1.96
2.21
5.59
6.35
9.02
9.27
9.07
9.22
3.18
3.43
5.77
5.92
5.72
5.97
0.13 REF
0.25 REF
0.38 REF
NOT RECOMMENDED FOR NEW DESIGN
Q
aaa
2X
G
MRF9030LR1
8
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
8
Sept. 2008
Description
• Data sheet revised to reflect part status change, p. 1, including use of applicable overlay.
• Added Product Documentation and Revision History, p. 9
NOT RECOMMENDED FOR NEW DESIGN
NOT RECOMMENDED FOR NEW DESIGN
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
MRF9030LR1
RF Device Data
Freescale Semiconductor
9
Home Page:
www.freescale.com
Web Support:
http://www.freescale.com/support
USA/Europe or Locations Not Listed:
Freescale Semiconductor, Inc.
Technical Information Center, EL516
2100 East Elliot Road
Tempe, Arizona 85284
1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130
www.freescale.com/support
Europe, Middle East, and Africa:
Freescale Halbleiter Deutschland GmbH
Technical Information Center
Schatzbogen 7
81829 Muenchen, Germany
+44 1296 380 456 (English)
+46 8 52200080 (English)
+49 89 92103 559 (German)
+33 1 69 35 48 48 (French)
www.freescale.com/support
Japan:
Freescale Semiconductor Japan Ltd.
Headquarters
ARCO Tower 15F
1 - 8 - 1, Shimo - Meguro, Meguro - ku,
Tokyo 153 - 0064
Japan
0120 191014 or +81 3 5437 9125
[email protected]
Asia/Pacific:
Freescale Semiconductor China Ltd.
Exchange Building 23F
No. 118 Jianguo Road
Chaoyang District
Beijing 100022
China
+86 10 5879 8000
[email protected]
For Literature Requests Only:
Freescale Semiconductor Literature Distribution Center
P.O. Box 5405
Denver, Colorado 80217
1 - 800 - 441 - 2447 or +1 - 303 - 675 - 2140
Fax: +1 - 303 - 675 - 2150
[email protected]
Information in this document is provided solely to enable system and software
implementers to use Freescale Semiconductor products. There are no express or
implied copyright licenses granted hereunder to design or fabricate any integrated
circuits or integrated circuits based on the information in this document.
Freescale Semiconductor reserves the right to make changes without further notice to
any products herein. Freescale Semiconductor makes no warranty, representation or
guarantee regarding the suitability of its products for any particular purpose, nor does
Freescale Semiconductor assume any liability arising out of the application or use of
any product or circuit, and specifically disclaims any and all liability, including without
limitation consequential or incidental damages. “Typical” parameters that may be
provided in Freescale Semiconductor data sheets and/or specifications can and do
vary in different applications and actual performance may vary over time. All operating
parameters, including “Typicals”, must be validated for each customer application by
customer’s technical experts. Freescale Semiconductor does not convey any license
under its patent rights nor the rights of others. Freescale Semiconductor products are
not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life,
or for any other application in which the failure of the Freescale Semiconductor product
could create a situation where personal injury or death may occur. Should Buyer
purchase or use Freescale Semiconductor products for any such unintended or
unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all
claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such
unintended or unauthorized use, even if such claim alleges that Freescale
Semiconductor was negligent regarding the design or manufacture of the part.
Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc.
All other product or service names are the property of their respective owners.
© Freescale Semiconductor, Inc. 2008. All rights reserved.
NOT RECOMMENDED FOR NEW DESIGN
NOT RECOMMENDED FOR NEW DESIGN
How to Reach Us:
MRF9030LR1
Document Number: MRF9030
Rev. 8, 9/2008
10
RF Device Data
Freescale Semiconductor