Data Sheet

Freescale Semiconductor
Technical Data
Document Number: MRF6VP121KH
Rev. 3, 4/2010
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
RF Power transistors designed for applications operating at frequencies
between 965 and 1215 MHz. These devices are suitable for use in pulsed
applications.
• Typical Pulsed Performance: VDD = 50 Volts, IDQ = 150 mA, Pout =
1000 Watts Peak (100 W Avg.), f = 1030 MHz, Pulse Width = 128 μsec,
Duty Cycle = 10%
Power Gain — 20 dB
Drain Efficiency — 56%
• Capable of Handling 5:1 VSWR, @ 50 Vdc, 1030 MHz, 1000 Watts Peak
Power
Features
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 50 VDD Operation
• Integrated ESD Protection
• Designed for Push--Pull Operation
• Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
• RoHS Compliant
• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
MRF6VP121KHR6
MRF6VP121KHSR6
965--1215 MHz, 1000 W, 50 V
LATERAL N--CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 375D--05, STYLE 1
NI--1230
MRF6VP121KHR6
CASE 375E--04, STYLE 1
NI--1230S
MRF6VP121KHSR6
PARTS ARE PUSH--PULL
RFinA/VGSA 3
1 RFoutA/VDSA
RFinB/VGSB 4
2 RFoutB/VDSB
(Top View)
Figure 1. Pin Connections
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain--Source Voltage
Rating
VDSS
--0.5, +110
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Storage Temperature Range
Tstg
-- 65 to +150
°C
TC
150
°C
TJ
225
°C
Case Operating Temperature
Operating Junction Temperature
(1,2)
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
© Freescale Semiconductor, Inc., 2009--2010. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6VP121KHR6 MRF6VP121KHSR6
1
Table 2. Thermal Characteristics
Characteristic
Symbol
Thermal Resistance, Junction to Case
Case Temperature 67°C, 1000 W Pulsed, 128 μsec Pulse Width, 10% Duty Cycle,
50 Vdc, IDQ = 150 mA
Case Temperature 62°C, Mode--S Pulse Train, 80 Pulses of 32 μsec On, 18 μsec
Off, Repeated Every 40 msec, 6.4% Overall Duty Cycle, 50 Vdc, IDQ = 150 mA
ZθJC
Value (1,2)
Unit
°C/W
0.02
0.07
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
1B (Minimum)
Machine Model (per EIA/JESD22--A115)
B (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
IGSS
—
—
10
μAdc
V(BR)DSS
110
—
—
Vdc
Zero Gate Voltage Drain Leakage Current
(VDS = 50 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 100 Vdc, VGS = 0 Vdc)
IDSS
—
—
100
μAdc
Gate Threshold Voltage (3)
(VDS = 10 Vdc, ID = 1000 μAdc)
VGS(th)
0.9
1.6
2.4
Vdc
Gate Quiescent Voltage (4)
(VDD = 50 Vdc, ID = 150 mAdc, Measured in Functional Test)
VGS(Q)
1.5
2.2
3
Vdc
Drain--Source On--Voltage (3)
(VGS = 10 Vdc, ID = 2.7 Adc)
VDS(on)
—
0.15
—
Vdc
Reverse Transfer Capacitance
(VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
1.27
—
pF
Output Capacitance
(VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
86.7
—
pF
Input Capacitance
(VDS = 50 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
Ciss
—
539
—
pF
Characteristic
Off Characteristics
(3)
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
Drain--Source Breakdown Voltage
(VGS = 0 Vdc, ID = 165 mA)
On Characteristics
Dynamic Characteristics (3)
Functional Tests (4) (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 150 mA, Pout = 1000 W Peak (100 W Avg.),
f = 1030 MHz, 128 μsec Pulse Width, 10% Duty Cycle
Power Gain
Gps
19
20
22
dB
Drain Efficiency
ηD
54
56
—
%
Input Return Loss
IRL
—
--23
--9
dB
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
3. Each side of device measured separately.
4. Measurement made with device in push--pull configuration.
(continued)
MRF6VP121KHR6 MRF6VP121KHSR6
2
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Pulsed RF Performance — 785 MHz (In Freescale 785 MHz Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 150 mA, Pout = 1000 W
Peak (100 W Avg.), f = 785 MHz, 128 μsec Pulse Width, 10% Duty Cycle
Power Gain
Gps
—
18.9
—
dB
Drain Efficiency
ηD
—
57.8
—
%
Input Return Loss
IRL
—
--16.6
—
dB
Pulsed RF Performance — 1030 MHz (In Freescale 1030 MHz Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 150 mA, Pout = 1000 W
Peak (100 W Avg.), f = 1030 MHz, Mode--S Pulse Train, 80 Pulses of 32 μsec On, 18 μsec Off, Repeated Every 40 msec, 6.4% Overall Duty
Cycle
Power Gain
Gps
—
19.8
—
dB
Drain Efficiency
ηD
—
59.0
—
%
BDrp
—
0.21
—
dB
Burst Droop
Pulsed RF Performance — 1090 MHz (In Freescale 1090 MHz Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 150 mA, Pout = 1000 W
Peak (100 W Avg.), f = 1090 MHz, 128 μsec Pulse Width, 10% Duty Cycle
Power Gain
Gps
—
21.4
—
dB
Drain Efficiency
ηD
—
56.3
—
%
Input Return Loss
IRL
—
--25.3
—
dB
MRF6VP121KHR6 MRF6VP121KHSR6
RF Device Data
Freescale Semiconductor
3
VBIAS
+
C1
C2
C3
C4
C21
C22
+
+
C23
C24
VSUPPLY
L1
BALUN 1
Z3
RF
INPUT Z1
C13
R1
Z5
Z7
Z11
Z13
Z15
Z17
Z19 Z21
C18
Z9
RF
Z23 OUTPUT
C10
Z2
Z4
C9
Z6
Z8
C12
Z10
DUT
C11
Z12
C15
C16
Z16
Z18
Z14
Z20 Z22
R2
C19
C14
VBIAS
C17
L2
+
C5
C6
C7
C20
C8
C25
Z1
Z2
Z3, Z4
Z5, Z6
Z7, Z8
Z9, Z10
Z11, Z12
BALUN 2
0.140″ x 0.083″
0.300″ x 0.083″
0.746″ x 0.220″
0.075″ x 0.631″
0.329″ x 0.631″
0.326″ x 0.631″
0.240″ x 0.631″
Z13, Z14
Z15, Z16
Z17, Z18
Z19, Z20
Z21, Z22
Z23
PCB
C26
+
+
C27
C28
VSUPPLY
0.143″ x 0.631″
0.135″ x 0.631″
0.102″ x 0.632″
0.130″ x 0.631″
0.736″ x 0.215″
0.410″ x 0.083″
Arlon CuClad 250GX--0300--55--22, 0.030″, εr = 2.55
Figure 2. MRF6VP121KHR6(HSR6) Test Circuit Schematic
Table 5. MRF6VP121KHR6(HSR6) Test Circuit Component Designations and Values
Part
Description
Manufacturer
Part Number
Balun 1, 2
Balun Anaren
3A412
Anaren
C1, C5
22 μF, 25 V Tantalum Capacitors
TPSD226M025R
AVX
C2, C6
2.2 μF, 50 V Chip Capacitors
C1825C225J5RAC
Kemet
C3, C7
0.22 μF, 100 V Chip Capacitors
C1210C224K1RAC
Kemet
C4, C8, C10, C11, C17,
C18, C19, C20, C21, C25
36 pF Chip Capacitors
ATC100B360JT500XT
ATC
C9
1.0 pF Chip Capacitor
ATC100B1R0CT500XT
ATC
C12, C16
0.8--8.0 pF Variable Capacitors
27291SL
Johanson
C13, C14, C15
5.1 pF Chip Capacitors
ATC100B5R1CT500XT
ATC
C22, C26
0.022 μF, 100 V Chip Capacitors
C1825C223K1GAC
Kemet
C23, C24, C27, C28
470 μF, 63 V Electrolytic Capacitors
MCGPR63V477M13X26--RH
Multicomp
L1, L2
Inductors 3 Turn
GA3094--AL
Coilcraft
R1, R2
1000 Ω, 1/4 W Chip Resistors
CRCW12061001FKEA
Vishay
MRF6VP121KHR6 MRF6VP121KHSR6
4
RF Device Data
Freescale Semiconductor
C24
C3
C2
BALUN 1
C13
C12
C6
C8
C7
C15
CUT OUT AREA
R2
C5
C21
R1
C11
--
C22
C4
C10
C9
C23
MRF6VP121KH
Rev. 2
C1
BALUN 2
L1
C17
C18
C16
C19
C20
C14
L2
C25
C26
C27
--
C28
Figure 3. MRF6VP121KHR6(HSR6) Test Circuit Component Layout
MRF6VP121KHR6 MRF6VP121KHSR6
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
22
21
Coss
100
Measured with ±30 mV(rms)ac @ 1 MHz
VGS = 0 Vdc
Crss
10
Gps, POWER GAIN (dB)
C, CAPACITANCE (pF)
Ciss
60
VDD = 50 Vdc
IDQ = 150 mA
f = 1030 MHz
Pulse Width = 128 μsec
Duty Cycle = 10%
20
50
Gps
40
30
19
18
20
ηD
10
17
16
1
0
10
20
40
30
50
Note: Each side of device measured separately.
Figure 5. Pulsed Power Gain and Drain Efficiency
versus Output Power
24
Gps, POWER GAIN (dB)
P1dB = 1065 W (60.3 dBm)
20
P3dB = 1182 W (60.7 dBm)
19.5
19
18.5
18
500
VDD = 50 Vdc
IDQ = 150 mA
f = 1030 MHz
Pulse Width = 128 μsec
Duty Cycle = 10%
600
700
Actual
900
1000
1100
1200
1300
3000 mA
21
20
1500 mA
19
750 mA
18
375 mA
17
150 mA
VDD = 50 Vdc
f = 1030 MHz
Pulse Width = 128 μsec
Duty Cycle = 10%
10
1
1000
100
10000
Pout, OUTPUT POWER (WATTS) PULSED
Pout, OUTPUT POWER (WATTS) PULSED
Figure 6. Pulsed Power Gain versus
Output Power
Figure 7. Pulsed Power Gain versus
Output Power
65
IDQ = 150 mA, f = 1030 MHz
Pulse Width = 128 μsec
Duty Cycle = 10%
20
19
18
VDD = 30 V
17
0
22
16
800
21
16
IDQ = 6000 mA
23
21
Pout, OUTPUT POWER (dBm)
Gps, POWER GAIN (dB)
21.5
Gps, POWER GAIN (dB)
25
Ideal
20.5
0
10000
1000
100
Pout, OUTPUT POWER (WATTS) PULSED
22
22
10
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 4. Capacitance versus Drain--Source Voltage
23
1
200
400
ηD, DRAIN EFFICIENCY (%)
1000
35 V
40 V
45 V
50 V
600
800
1000
1200
1400
60
55
TC = --30_C
50
45
40
20
25_C
VDD = 50 Vdc
IDQ = 150 mA
f = 1030 MHz
Pulse Width = 128 μsec
Duty Cycle = 10%
85_C
25
30
35
40
Pout, OUTPUT POWER (WATTS) PULSED
Pin, INPUT POWER (dBm) PULSED
Figure 8. Pulsed Power Gain versus
Output Power
Figure 9. Pulsed Output Power versus
Input Power
45
MRF6VP121KHR6 MRF6VP121KHSR6
6
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
22
Gps, POWER GAIN (dB)
70
VDD = 50 Vdc
IDQ = 150 mA
f = 1030 MHz
Pulse Width = 128 μsec
Duty Cycle = 10%
21
60
Gps
50
20
40
TC = --30_C
19
18
25_C
17
16
30
20
ηD
10
85_C
10
1
ηD, DRAIN EFFICIENCY (%)
23
0
10000
1000
100
Pout, OUTPUT POWER (WATTS) PULSED
109
109
108
108
MTTF (HOURS)
MTTF (HOURS)
Figure 10. Pulsed Power Gain and Drain Efficiency
versus Output Power
107
106
105
107
106
105
104
104
90
110
130
150
170
190
210
230
250
TJ, JUNCTION TEMPERATURE (°C)
90
110
130
150
170
190
210
230
250
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 50 Vdc, Pout = 1000 W Peak, Pulse Width = 128 μsec,
Duty Cycle = 10%, and ηD = 56%.
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 50 Vdc, Pout = 1000 W Peak, Mode--S Pulse Train,
Pulse Width = 32 μsec, Duty Cycle = 6.4%, and ηD = 59%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 11. MTTF versus Junction Temperature -128 μsec, 10% Duty Cycle
Figure 12. MTTF versus Junction Temperature -Mode--S
MRF6VP121KHR6 MRF6VP121KHSR6
RF Device Data
Freescale Semiconductor
7
Zo = 5 Ω
f = 1030 MHz
Zload
f = 1030 MHz
Zsource
VDD = 50 Vdc, IDQ = 150 mA, Pout = 1000 W Peak
f
MHz
Zsource
Ω
Zload
Ω
1030
3.93 + j0.09
1.54 + j1.42
Zsource = Test circuit impedance as measured from
gate to gate, balanced configuration.
Zload
= Test circuit impedance as measured from
drain to drain, balanced configuration.
Input
Matching
Network
+
Device
Under
Test
--
-Z
source
Output
Matching
Network
+
Z
load
Figure 13. Series Equivalent Source and Load Impedance
MRF6VP121KHR6 MRF6VP121KHSR6
8
RF Device Data
Freescale Semiconductor
C26
C25
MRF6VP121KH
Rev. 2
C1
C3
C2
BALUN 1
C24
C23
C4
L1
BALUN 2
R1
C13
C12
C11
R2
C8
C6
C17 C18
C14
CUT OUT AREA
C10
C19
C20
C21
C22
C15 C16
L2
C27
C7
C28
--
C9
C29
C30
C5
Figure 14. MRF6VP121KHR6(HSR6) Test Circuit Component Layout — 785 MHz
Table 6. MRF6VP121KHR6(HSR6) Test Circuit Component Designations and Values — 785 MHz
Part
Description
Manufacturer
Part Number
Balun 1, 2
Balun Anaren
3A412
Anaren
C1, C5
22 μF, 25 V Tantalum Capacitors
TPSD226M025R0200
AVX
C2, C6
2.2 μF, 50 V Chip Capacitors
C1825C225J5RAC--TU
Kemet
C3, C7
0.22 μF, 100 V Chip Capacitors
C1210C224K1RAC--TU
Kemet
C4, C8, C10, C11, C19,
C20, C21, C22, C23, C27
36 pF Chip Capacitors
ATC100B360JT500XT
ATC
C9
8.2 pF Chip Capacitor
ATC100B8R2CT500XT
ATC
C12
0.6--4.5 pF Variable Capacitor
27271SL
Johanson
C13
3.6 pF Chip Capacitor
ATC100B3R6CT500XT
ATC
C14
10 pF Chip Capacitor
ATC100B100JT500XT
ATC
C15, C16, C17, C18
5.1 pF Chip Capacitors
ATC100B5R1CT500XT
ATC
C24, C28
0.022 μF, 100 V Chip Capacitors
C1825C223K1GAC
Kemet
C25, C26, C29, C30
470 μF, 63 V Electrolytic Capacitors
MCGPR63V477M13X26--RH
Multicomp
L1, L2
Inductors 3 Turn
GA3094--ALC
Coilcraft
R1, R2
1000 Ω, 1/4 W Chip Resistors
CRCW12061K00FKEA
Vishay
PCB
CuClad, 0.030″, εr = 2.55
250GX--0300--55--22
Arlon
MRF6VP121KHR6 MRF6VP121KHSR6
RF Device Data
Freescale Semiconductor
9
TYPICAL CHARACTERISTICS — 785 MHZ
VDD = 50 Vdc
20 I = 150 mA
DQ
19.5 f = 785 MHz
Pulse Width = 128 μsec
19
Duty Cycle = 10%
18.5
18
60
55
50
45
40
Gps
17.5
35
30
ηD
17
25
16.5
20
16
15
15.5
10
100
1000
ηD, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
20.5
10
3000
Pout, OUTPUT POWER (WATTS) PULSED
Figure 15. Pulsed Power Gain and Drain Efficiency
versus Output Power
MRF6VP121KHR6 MRF6VP121KHSR6
10
RF Device Data
Freescale Semiconductor
Zo = 5 Ω
Zload
f = 785 MHz
Zsource
f = 785 MHz
VDD = 50 Vdc, IDQ = 150 mA, Pout = 1000 W Peak
f
MHz
Zsource
Ω
Zload
Ω
785
1.54 -- j0.46
2.79 + j1.10
Zsource = Test circuit impedance as measured from
gate to gate, balanced configuration.
Zload
= Test circuit impedance as measured from
drain to drain, balanced configuration.
Input
Matching
Network
+
Device
Under
Test
--
-Z
source
Output
Matching
Network
+
Z
load
Figure 16. Series Equivalent Source and Load Impedance — 785 MHz
MRF6VP121KHR6 MRF6VP121KHSR6
RF Device Data
Freescale Semiconductor
11
-MRF6VP121KH
Rev. 2
C3
C2
C21
C13
R1
C29
C12
C11
R2
C8
C6
C15
CUT OUT AREA
C10
--
C22
C4
BALUN 1
C9
C23
BALUN 2
L1
C16
C17
C18
C19
C20
C14
L2
C25 C26
C7
C5
--
C1
C24
C27
C28
Figure 17. MRF6VP121KHR6(HSR6) Test Circuit Component Layout — 1090 MHz
Table 7. MRF6VP121KHR6(HSR6) Test Circuit Component Designations and Values — 1090 MHz
Part
Description
Manufacturer
Part Number
Balun 1, 2
Balun Anaren
3A412
Anaren
C1, C5
22 μF, 25 V Tantalum Capacitors
TPSD226M025R0200
AVX
C2, C6
2.2 μF, 50 V 1825 Chip Capacitors
C1825C225J5RAC--TU
Kemet
C3, C7
0.22 μF, 100 V Chip Capacitors
C1210C224K1RAC--TU
Kemet
C4, C8, C17, C18, C19,
C20, C21, C25
36 pF Chip Capacitors
ATC100B360JT500XT
ATC
C9
1.0 pF Chip Capacitor
ATC100B1R0BT500XT
ATC
C12, C16
0.8--8.0 pF Variable Capacitors
27291SL
Johanson
C10, C11, C13, C14, C15,
C29
5.1 pF Chip Capacitors
ATC100B5R1CT500XT
ATC
C22, C26
0.022 μF, 100 V Chip Capacitors
C1825C223K1GAC
Kemet
C23, C24, C27, C28
470 μF, 63 V Electrolytic Capacitors
MCGPR63V477M13X26--RH
Multicomp
L1, L2
Inductors 3 Turn
GA3094--ALC
Coilcraft
R1, R2
1000 Ω, 1/4 W Chip Resistors
CRCW12061K00FKEA
Vishay
PCB
CuClad, 0.030″, εr = 2.55
250GX--0300--55--22
Arlon
MRF6VP121KHR6 MRF6VP121KHSR6
12
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS — 1090 MHZ
60
VDD = 50 Vdc
I = 150 mA
21 DQ
f = 1090 MHz
Pulse Width = 128 μsec
20 Duty Cycle = 10%
50
40
Gps
19
30
ηD
18
20
17
10
16
10
100
1000
ηD, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
22
0
3000
Pout, OUTPUT POWER (WATTS) PULSED
Figure 18. Pulsed Power Gain and Drain Efficiency
versus Output Power
MRF6VP121KHR6 MRF6VP121KHSR6
RF Device Data
Freescale Semiconductor
13
Zo = 5 Ω
f = 1090 MHz
f = 1090 MHz
Zsource
Zload
VDD = 50 Vdc, IDQ = 150 mA, Pout = 1000 W Peak
f
MHz
Zsource
Ω
Zload
Ω
1090
2.98 + j3.68
1.51 + j2.02
Zsource = Test circuit impedance as measured from
gate to gate, balanced configuration.
Zload
= Test circuit impedance as measured from
drain to drain, balanced configuration.
Input
Matching
Network
+
Device
Under
Test
--
-Z
source
Output
Matching
Network
+
Z
load
Figure 19. Series Equivalent Source and Load Impedance — 1090 MHz
MRF6VP121KHR6 MRF6VP121KHSR6
14
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
MRF6VP121KHR6 MRF6VP121KHSR6
RF Device Data
Freescale Semiconductor
15
MRF6VP121KHR6 MRF6VP121KHSR6
16
RF Device Data
Freescale Semiconductor
MRF6VP121KHR6 MRF6VP121KHSR6
RF Device Data
Freescale Semiconductor
17
MRF6VP121KHR6 MRF6VP121KHSR6
18
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
June 2009
• Initial Release of Data Sheet
1
June 2009
• Added Pulsed RF Performance tables for 785 MHz and 1090 MHz applications, p. 3
• Added Figs. 13 and 16, Test Circuit Component Layout -- 785 MHz and 1090 MHz, and Tables 6 and 7, Test
Circuit Component Designations and Values -- 785 MHz and 1090 MHz, p. 9, 12
• Added Figs. 14 and 17, Pulsed Power Gain and Drain Efficiency versus Output Power -- 785 MHz and
1090 MHz, p. 10, 13
• Added Figs. 15 and 18, Series Equivalent Source and Load Impedance -- 785 MHz and 1090 MHz, p. 11, 14
2
Dec. 2009
• Added thermal data for 1030 MHz Mode--S application to Table 2, Thermal Characteristics, reporting of
pulsed thermal data now shown using the ZθJC symbol, p. 2
• Added Typical Performances table for 1030 MHz Mode--S application, p. 3
• Added Fig. 12, MTTF versus Junction Temperature -- 1030 MHz Mode--S, p. 7
3
Apr. 2010
• Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related
“Continuous use at maximum temperature will affect MTTF” footnote added, p. 1
MRF6VP121KHR6 MRF6VP121KHSR6
RF Device Data
Freescale Semiconductor
19
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MRF6VP121KHR6 MRF6VP121KHSR6
Document Number: MRF6VP121KH
Rev. 3, 4/2010
20
RF Device Data
Freescale Semiconductor