NSS60600MZ4 D

NSS60600MZ4
60 V, 6.0 A, Low VCE(sat)
PNP Transistor
ON Semiconductor’s e2 PowerEdge family of low VCE(sat)
transistors are surface mount devices featuring ultra low saturation
voltage (VCE(sat)) and high current gain capability. These are designed
for use in low voltage, high speed switching applications where
affordable efficient energy control is important.
Typical applications are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e2PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
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−60 VOLTS, 6.0 AMPS
2.0 WATTS
PNP LOW VCE(sat) TRANSISTOR
EQUIVALENT RDS(on) 50 mW
4
1
2
3
Features
SOT−223
CASE 318E
STYLE 1
• Complementary to NSS60601MZ4
• NSV Prefix for Automotive and Other Applications Requiring
•
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
C 2, 4
MAXIMUM RATINGS (TA = 25°C)
B1
Symbol
Max
Unit
Collector-Emitter Voltage
VCEO
−60
Vdc
Collector-Base Voltage
VCBO
−100
Vdc
Emitter-Base Voltage
VEBO
−6.0
Vdc
IC
−6.0
A
ICM
−12.0
A
Rating
Collector Current − Continuous
Collector Current − Peak
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
E3
MARKING DIAGRAM
AYW
60600G
1
A
Y
W
60600
G
= Assembly Location
= Year
= Work Week
= Specific Device Code
= Pb−Free Package
PIN ASSIGNMENT
4
C
B
C
E
1
2
3
Top View Pinout
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2016
June, 2016 − Rev. 5
1
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Publication Order Number:
NSS60600MZ4/D
NSS60600MZ4
THERMAL CHARACTERISTICS
Characteristic
Symbol
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD (Note 1)
Thermal Resistance,
Junction−to−Ambient
RqJA (Note 1)
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD (Note 2)
Thermal Resistance,
Junction−to−Ambient
RqJA (Note 2)
Max
Unit
800
6.5
mW
mW/°C
°C/W
155
2
15.6
W
mW/°C
°C/W
64
Total Device Dissipation
(Single Pulse < 10 sec.)
PDsingle
(Note 3)
710
mW
Junction and Storage Temperature Range
TJ, Tstg
−55 to +150
°C
1. FR− 4 @ 7.6 mm2, 1 oz. copper traces.
2. FR− 4 @ 645 mm2, 1 oz. copper traces.
3. Thermal response.
ORDERING INFORMATION
Package
Shipping†
NSS60600MZ4T1G
SOT−223
(Pb−Free)
1,000 / Tape & Reel
NSV60600MZ4T1G
SOT−223
(Pb−Free)
1,000 / Tape & Reel
NSS60600MZ4T3G
SOT−223
(Pb−Free)
4,000 / Tape & Reel
NSV60600MZ4T3G
SOT−223
(Pb−Free)
4,000 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
2
NSS60600MZ4
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector −Emitter Breakdown Voltage (IC = −10 mAdc, IB = 0)
V(BR)CEO
−60
−
−
Vdc
Collector −Base Breakdown Voltage (IC = −0.1 mAdc, IE = 0)
V(BR)CBO
−100
−
−
Vdc
Emitter −Base Breakdown Voltage (IE = −0.1 mAdc, IC = 0)
OFF CHARACTERISTICS
V(BR)EBO
−6.0
−
−
Vdc
Collector Cutoff Current (VCB = −100 Vdc, IE = 0)
ICBO
−
−
−0.1
mAdc
Emitter Cutoff Current (VEB = −6.0 Vdc)
IEBO
−
−
−0.1
mAdc
150
120
100
70
−
−
−
−
−
360
−
−
−
−
−
−
−
−
−0.050
−0.100
−
−
−0.050
−0.070
−0.120
−0.250
−0.350
−
−
−1.0
−
−
−0.900
100
−
−
ON CHARACTERISTICS
hFE
DC Current Gain (Note 4)
(IC = −500 mA, VCE = −2.0 V)
(IC = −1.0 A, VCE = −2.0 V)
(IC = −2.0 A, VCE = −2.0 V)
(IC = −6.0 A, VCE = −2.0 V)
−
Collector −Emitter Saturation Voltage (Note 4)
(IC = −0.1 A, IB = −2.0 mA)
(IC = −1.0 A, IB = −0.100 A)
(IC = −2.0 A, IB = −0.200 A)
(IC = −3.0 A, IB = −60 mA)
(IC = −6.0 A, IB = −0.6 A)
VCE(sat)
Base −Emitter Saturation Voltage (Note 4)
(IC = −1.0 A, IB = −0.1 A)
VBE(sat)
Base −Emitter Turn−on Voltage (Note 4)
(IC = −1.0 A, VCE = −2.0 V)
VBE(on)
V
V
V
Cutoff Frequency
(IC = −500 mA, VCE = −10 V, f = 1.0 MHz)
fT
MHz
Input Capacitance (VEB = 5.0 V, f = 1.0 MHz)
Cibo
−
360
−
pF
Output Capacitance (VCB = 10 V, f = 1.0 MHz)
Cobo
−
60
−
pF
Delay (VCC = −30 V, IC = 750 mA, IB1 = 15 mA)
td
−
100
−
ns
Rise (VCC = −30 V, IC = 750 mA, IB1 = 15 mA)
tr
−
180
−
ns
Storage (VCC = −30 V, IC = 750 mA, IB1 = 15 mA)
ts
−
540
−
ns
Fall (VCC = −30 V, IC = 750 mA, IB1 = 15 mA)
tf
−
145
−
ns
SWITCHING CHARACTERISTICS
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
PD, POWER DISSIPATION (W)
2.5
2.0
TC
1.5
1.0
TA
0.5
0
25
50
75
100
TJ, TEMPERATURE (°C)
Figure 1. Power Derating
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3
125
150
NSS60600MZ4
TYPICAL CHARACTERISTICS
1000
1000
VCE = 4 V
150°C
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
VCE = 2 V
25°C
−40°C
100
10
0.001
150°C
25°C
10
0.01
0.1
1
10
0.001
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 2. DC Current Gain
Figure 3. DC Current Gain
10
1
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
IC/IB = 10
150°C
0.1
25°C
−40°C
0.01
IC/IB = 50
−40°C
25°C
0.1
150°C
0.01
0.001
0.001
0.01
0.1
1
0.001
10
IC, COLLECTOR CURRENT (A)
VBE(on), EMITTER−BASE VOLTAGE (V)
TJ = 25°C
IC = 6 A
3A
0.1
0.01
1.0E−04
2A
1A
0.1 A
1.0E−03
0.5 A
1.0E−02
1.0E−01
0.1
1
10
Figure 5. Collector−Emitter Saturation Voltage
10
1
0.01
IC, COLLECTOR CURRENT (A)
Figure 4. Collector−Emitter Saturation Voltage
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
0.01
IC, COLLECTOR CURRENT (A)
1
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
−40°C
100
1.0E+00
1.0E+01
1.2
1.1
VCE = 2 V
1.0
0.9
−40°C
0.8
0.7
0.6
25°C
0.5
0.4
0.3
0.2
0.1
0
0.001
IB, BASE CURRENT (A)
150°C
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 6. Collector Saturation Region
Figure 7. VBE(on) Voltage
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4
10
NSS60600MZ4
TYPICAL CHARACTERISTICS
1.2
IC/IB = 10
1.0
0.9
0.8
VBE(sat), EMITTER−BASE
SATURATION VOLTAGE (V)
VBE(sat), EMITTER−BASE
SATURATION VOLTAGE (V)
1.2
1.1
−40°C
0.7
0.6
0.5
25°C
0.4
150°C
0.3
0.2
0.1
0
0.001
0.01
0.1
1
10
1.1
1.0
IC/IB = 50
0.9
−40°C
0.8
0.7
0.6
25°C
0.5
0.4
0.3
150°C
0.2
0.1
0
0.001
0.01
IC, COLLECTOR CURRENT (A)
180
TJ = 25°C
ftest = 1 MHz
800
Cobo, OUTPUT CAPACITANCE (pF)
Cibo, INPUT CAPACITANCE (pF)
10
Figure 9. Base−Emitter Saturation Voltage
900
700
600
500
400
300
200
100
160
TJ = 25°C
ftest = 1 MHz
140
120
100
80
60
40
20
0
0
1
2
3
4
5
7
6
8
0
10
20
30
40
50
60
Figure 10. Input Capacitance
Figure 11. Output Capacitance
IC, COLLECTOR CURRENT (A)
TJ = 25°C
ftest = 1 MHz
VCE = 10 V
100
80
60
40
20
0
0.001
90 100
VCB, COLLECTOR BASE VOLTAGE (V)
100
120
80
70
VEB, EMITTER BASE VOLTAGE (V)
140
fTau, CURRENT BANDWIDTH
PRODUCT (MHz)
1
IC, COLLECTOR CURRENT (A)
Figure 8. Base−Emitter Saturation Voltage
0
0.1
0.01
0.1
1
10
100 ms
10 ms
1 ms
10
1s
100 ms
1
10 ms
DC
1 ms
0.5 ms
0.1
0.01
0.1
IC, COLLECTOR CURRENT (A)
1
10
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 12. Current−Gain Bandwidth Product
Figure 13. Safe Operating Area
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5
100
NSS60600MZ4
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE N
D
b1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCH.
4
HE
DIM
A
A1
b
b1
c
D
E
e
e1
L
L1
HE
E
1
2
3
b
e1
e
0.08 (0003)
A1
C
q
A
q
L
STYLE 1:
PIN 1.
2.
3.
4.
L1
MIN
1.50
0.02
0.60
2.90
0.24
6.30
3.30
2.20
0.85
0.20
1.50
6.70
0°
MILLIMETERS
NOM
MAX
1.63
1.75
0.06
0.10
0.75
0.89
3.06
3.20
0.29
0.35
6.50
6.70
3.50
3.70
2.30
2.40
0.94
1.05
−−−
−−−
1.75
2.00
7.00
7.30
−
10°
MIN
0.060
0.001
0.024
0.115
0.009
0.249
0.130
0.087
0.033
0.008
0.060
0.264
0°
INCHES
NOM
0.064
0.002
0.030
0.121
0.012
0.256
0.138
0.091
0.037
−−−
0.069
0.276
−
MAX
0.068
0.004
0.035
0.126
0.014
0.263
0.145
0.094
0.041
−−−
0.078
0.287
10°
BASE
COLLECTOR
EMITTER
COLLECTOR
SOLDERING FOOTPRINT*
3.8
0.15
2.0
0.079
2.3
0.091
2.3
0.091
6.3
0.248
2.0
0.079
1.5
0.059
SCALE 6:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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6
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NSS60600MZ4/D