Data Sheet

Freescale Semiconductor
Technical Data
Document Number: MRF8P20165WH
Rev. 0, 4/2011
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
MRF8P20165WHR3
MRF8P20165WHSR3
Designed for base station applications with wide instantaneous bandwidth
requirements covering frequencies from 1880 to 2025 MHz.
• Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Volts,
IDQA = 550 mA, VGSB = 1.3 Vdc, Pout = 37 Watts Avg., IQ Magnitude
Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB
@ 0.01% Probability on CCDF.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
1930 MHz
16.1
47.0
7.1
--27.7
1960 MHz
16.3
47.7
7.1
--29.7
1995 MHz
16.3
46.0
7.0
--33.3
1930--1995 MHz, 37 W AVG., 28 V
SINGLE W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFETs
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 1960 MHz, 173 Watts CW
Output Power (2 dB Input Overdrive from Rated Pout)
• Typical Pout @ 3 dB Compression Point ≃ 190 Watts (1)
Features
• Designed for Wide Instantaneous Bandwidth Applications. VBWres ≃ 100 MHz.
• Designed for Wideband Applications that Require 65 MHz Signal Bandwidth
• Production Tested in a Symmetrical Doherty Configuration
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Large--Signal Load--Pull Parameters and Common
Source S--Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
• Designed for Digital Predistortion Error Correction Systems
• RoHS Compliant
• NI--780--4 in Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width,
13 inch Reel. For R5 Tape and Reel option, see p. 15.
• NI--780S--4 in Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width,
13 inch Reel. For R5 Tape and Reel option, see p. 15.
CASE 465M--01, STYLE 1
NI--780--4
MRF8P20165WHR3
CASE 465H--02, STYLE 1
NI--780S--4
MRF8P20165WHSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
--65 to +150
°C
TC
125
°C
TJ
225
°C
Case Operating Temperature
Operating Junction Temperature
(2)
RFinA/VGSA 3
1 RFoutA/VDSA
RFinB/VGSB 4
2 RFoutB/VDSB
(Top View)
Figure 1. Pin Connections
Table 2. Thermal Characteristics
Characteristic
Symbol
Thermal Resistance, Junction to Case
Case Temperature 80°C, 37 W CW, 28 Vdc, IDQA = 550 mA, VGSB = 1.3 Vdc, 1960 MHz
Case Temperature 114°C, 160 W CW, 28 Vdc, IDQA = 550 mA, VGSB = 1.3 Vdc, 1960 MHz
RθJC
Value (3)
0.79
0.53
Unit
°C/W
1. P3dB = Pavg + 7.0 dB where Pavg is the average output power measured using an unclipped W--CDMA single--carrier input signal where
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
2. Continuous use at maximum temperature will affect MTTF.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
© Freescale Semiconductor, Inc., 2011. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF8P20165WHR3 MRF8P20165WHSR3
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
1C (Minimum)
Machine Model (per EIA/JESD22--A115)
B (Minimum)
Charge Device Model (per JESD22--C101)
III (Minimum)
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
5
μAdc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage (1)
(VDS = 10 Vdc, ID = 232 μAdc)
VGS(th)
1.2
1.8
2.7
Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, IDA = 550 mAdc, Measured in Functional Test)
VGS(Q)
2.0
2.7
3.5
Vdc
Drain--Source On--Voltage (1)
(VGS = 10 Vdc, ID = 1.5 Adc)
VDS(on)
0.05
0.2
0.3
Vdc
Characteristic
Off Characteristics
(1)
On Characteristics (2)
Functional Tests (2,3,4) (In Freescale Doherty Production Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 550 mA, VGSB = 1.3 Vdc,
Pout = 37 W Avg., f1 = 1980 MHz, f2 = 2010 MHz, 2--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.8 dB @ 0.01%
Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Power Gain
Gps
14.2
14.8
17.2
dB
Drain Efficiency
ηD
40.6
44.3
—
%
PAR
5.2
5.8
—
dB
ACPR
—
--31.0
--28.7
dBc
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Performance (4)
Typical Broadband
— (In Freescale Doherty Characterization Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 550 mA,
VGSB = 1.3 Vdc, Pout = 37 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on
CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
1.
2.
3.
4.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
1930 MHz
16.1
47.0
7.1
--27.7
1960 MHz
16.3
47.7
7.1
--29.7
1995 MHz
16.3
46.0
7.0
--33.3
Side A and Side B are tied together for this measurement.
VDDA and VDDB must be tied together and powered by a single DC power supply.
Part internally matched both on input and output.
Measurement made with device in a Symmetrical Doherty configuration.
(continued)
MRF8P20165WHR3 MRF8P20165WHSR3
2
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances (1) (In Freescale Doherty Characterization Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 550 mA,
VGSB = 1.3 Vdc, 1930--1995 MHz Bandwidth
Pout @ 1 dB Compression Point, CW
P1dB
—
104
—
W
Pout @ 3 dB Compression Point (2)
P3dB
—
190
—
W
—
20
—
IMD Symmetry @ 74 W PEP, Pout where IMD Third Order
Intermodulation  30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres
—
100
—
MHz
Gain Flatness in 65 MHz Bandwidth @ Pout = 37 W Avg.
GF
—
0.2
—
dB
Gain Variation over Temperature
(--30°C to +85°C)
∆G
—
0.017
—
dB/°C
∆P1dB
—
0.01
—
dB/°C
Output Power Variation over Temperature
(--30°C to +85°C)
MHz
1. Measurement made with device in a Symmetrical Doherty configuration.
2. P3dB = Pavg + 7.0 dB where Pavg is the average output power measured using an unclipped W--CDMA single--carrier input signal where
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
MRF8P20165WHR3 MRF8P20165WHSR3
RF Device Data
Freescale Semiconductor
3
VGGA
C22
C8
C10
R2
C14
C1
C3
Z1
C4
C2
R3
C11
C28
C18
CUT OUT AREA
R1
VDDA
C24
C6
C7
C9
C
C15
C16
P
C30
C12
C13
C19
C29
C25
VDDB C26 C27
C23
MRF8P20165W
Rev. 1
VGGB
Note 1: Component numbers C5, C17, C20 and C21 are not used.
Note 2: VDDA and VDDB must be tied together and powered by a single DC power supply.
Figure 2. MRF8P20165WHR3(WHSR3) Production Test Circuit Component Layout
Table 5. MRF8P20165WHR3(WHSR3) Production Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C2, C6, C7, C12, C13
15 pF Chip Capacitors
ATC600F150JT250XT
ATC
C3, C4
1.8 pF Chip Capacitors
ATC600F1R8BT250XT
ATC
C8, C9, C24, C25
10 μF, 50 V Chip Capacitors
GRM55DR61H106KA88L
Murata
C10, C11
22 μF, 35 V Tantalum Capacitors
T491X226K035AT
Kemet
C14
0.3 pF Chip Capacitor
ATC600F0R3BT250XT
ATC
C15, C16
1.0 pF Chip Capacitors
ATC600F1R0BT250XT
ATC
C18, C19
2.0 pF Chip Capacitors
ATC600F2R0BT250XT
ATC
C22, C23
18 pF Chip Capacitors
ATC600F180JT250XT
ATC
C26, C27
0.1 pF Chip Capacitors
ATC600F0R1BT250XT
ATC
C28, C29
220 μF, 50 V Electrolytic Capacitors
227CKS050M
Illinois Capacitor
C30
0.8 pF Chip Capacitor
ATC600F0R8BT250XT
ATC
R1
50 Ω, 4 W Chip Resistor
CW12010T0050GBK
ATC
R2, R3
2.37 Ω, 1/4 W Chip Resistors
CRCW12062R37FNEA
Vishay
Z1
1750 MHz Band 90°, 3 dB Hybrid Coupler
GSC351--HYB1900
Soshin
PCB
0.020″, εr = 3.5
RO4350B
Rogers
MRF8P20165WHR3 MRF8P20165WHSR3
4
RF Device Data
Freescale Semiconductor
VGGA
C25
C7
C21
C19
R1
C10
C5
C1
C11 C
Z1
R3
C13
C2
C4
C27
C29
C12
C17
C30
P C14 C18
C15
C6
C16
R2
C8
VGGB
C23
C9
C3
VDDA
C28
C24
C20
C22
C26
VDDB
MRF8P20165W
Rev. 0
Note: VDDA and VDDB must be tied together and powered by a single DC power supply.
Figure 3. MRF8P20165WHR3(WHSR3) Characterization Test Circuit Component Layout
Table 6. MRF8P20165WHR3(WHSR3) Characterization Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1
1.6 pF Chip Capacitor
ATC600S1R6BT250XT
ATC
C2
1.8 pF Chip Capacitor
ATC600S1R8BT250XT
ATC
C3, C4, C5, C6, C21, C22
C29, C30
10 pF Chip Capacitors
ATC600S100JT250XT
ATC
C7, C8, C23, C24
10 μF, 50 V Chip Capacitors
GRM55DR61H106KA88L
Murata
C9, C11, C13, C15
2.7 pF Chip Capacitors
ATC600S2R7BT250XT
ATC
C10, C12, C14, C16, C17
1 pF Chip Capacitors
ATC600S1R0BT250XT
ATC
C18, C28
0.6 pF Chip Capacitors
ATC600S0R6BT250XT
ATC
C19, C20
1.5 pF Chip Capacitors
ATC600S1R5BT250XT
ATC
C25, C26
330 μF, 35 V Electrolytic Capacitors
MCGPR35V337M10X16--RH
Multicomp
C27
0.5 pF Chip Capacitor
ATC600S0R5BT250XT
ATC
R1, R2
2.37 Ω, 1/4 W Chip Resistors
CRCW12062R37FNEA
Vishay
R3
51 Ω, 1/4 W Chip Resistor
CRCW120651R0FKEA
Vishay
Z1
1900 MHz Band 90°, 3 dB Hybrid Coupler
GSC351--HYB1900
Soshin
PCB
0.030″, εr = 3.48
RO4350
Rogers
MRF8P20165WHR3 MRF8P20165WHSR3
RF Device Data
Freescale Semiconductor
5
Single--ended
λ
4
λ
Quadrature combined
4
λ
4
λ
λ
2
2
Doherty
Push--pull
Figure 4. Possible Circuit Topologies
MRF8P20165WHR3 MRF8P20165WHSR3
6
RF Device Data
Freescale Semiconductor
48
ηD
17
16
30 MHz Carrier Spacing, Input Signal
PAR = 9.8 dB @ 0.01% Probability on CCDF
15
14
13
Gps
PARC
11
10
1880
1920
1940
1960
1980
--27
--2.5
--21
--29
--2.75
--22
--33
--35
IM3
1900
44
--31
ACPR
12
46
2000
--37
2040
2020
--3
--3.25
--3.5
--23
--24
--25
--26
--3.75
IM3, THIRD ORDER
INTERMODULATION (dBc)
50
PARC (dB)
18
Gps, POWER GAIN (dB)
52
VDD = 28 Vdc, Pout = 37 W (Avg.), IDQA = 550 mA, VGSB = 1.3 Vdc
2--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
19
ACPR (dBc)
20
ηD, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS
f, FREQUENCY (MHz)
52
19
50
ηD
46
17
Gps
48
16
44
15
--26
--2.5
14
--28
--2.75
--30
PARC
13
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
12
11
10
1880
1900
1920
1940
1960
--32
ACPR
--34
1980
2000
2020
ACPR (dBc)
Gps, POWER GAIN (dB)
18
VDD = 28 Vdc, Pout = 37 W (Avg.), IDQA = 550 mA, VGSB = 1.3 Vdc
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
--36
2040
--3
--3.25
--3.5
PARC (dB)
20
ηD, DRAIN
EFFICIENCY (%)
Figure 5. 2--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ Pout = 37 Watts Avg.
--3.75
f, FREQUENCY (MHz)
IMD, INTERMODULATION DISTORTION (dBc)
Figure 6. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ Pout = 37 Watts Avg.
--10
VDD = 28 Vdc, Pout = 74 W (PEP), IDQA = 550 mA, VGSB = 1.3 Vdc
Two--Tone Measurements, (f1 + f2)/2 = Center
--20 Frequency of 1960 MHz
IM3--L
IM3--U
--30
IM5--L
IM5--U
--40
IM7--L
IM7--U
--50
--60
1
10
100
200
TWO--TONE SPACING (MHz)
Figure 7. Intermodulation Distortion Products
versus Two--Tone Spacing
MRF8P20165WHR3 MRF8P20165WHSR3
RF Device Data
Freescale Semiconductor
7
17
0
16.5
16
15.5
15
14.5
VDD = 28 Vdc, IDQA = 550 mA, VGSB = 1.3 Vdc
f = 1960 MHz, Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth
--10
50
--15
ηD
--1
40
Gps
--2
ACPR 30
--1 dB = 17 W
--2 dB = 28 W
--3
20
PARC
--3 dB = 39 W
--4
--5
60
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF
10
20
30
50
40
--20
--25
ACPR (dBc)
1
ηD, DRAIN EFFICIENCY (%)
17.5
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
Gps, POWER GAIN (dB)
TYPICAL CHARACTERISTICS
--30
10
--35
0
--40
60
0
60
Pout, OUTPUT POWER (WATTS)
Figure 8. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
Gps, POWER GAIN (dB)
17
16
Gps
ηD
1930 MHz
15 1960 MHz
1995 MHz
14
13
1930 MHz 50
1960 MHz
1995 MHz
40
ACPR
1995 MHz
1930 MHz
1960 MHz
20
10
Input Signal PAR = 9.9 dB
@ 0.01% Probability on CCDF
12
1
30
10
100
--10
0
200
--20
--30
--40
ACPR (dBc)
VDD = 28 Vdc, IDQA = 550 mA, VGSB = 1.3 Vdc
Single--Carrier W--CDMA, 3.84 MHz Channel
Bandwidth
ηD, DRAIN EFFICIENCY (%)
18
--50
--60
Pout, OUTPUT POWER (WATTS) AVG.
Figure 9. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
Gps, POWER GAIN (dB)
17
Gps
16
IM5--L
IM5--U
15
13
IM7--L
1
--20
15
--30
12
--50
IM3--L
12
18
--40
IM3--U
14
--10
Input Signal PAR = 9.8 dB @
0.01% Probability on CCDF
IM7--U
10
100
--60
--70
200
GAIN (dB)
VDD = 28 Vdc, IDQA = 550 mA, VGSB = 1.3 Vdc, f1 = 1945 MHz
f2 = 1975 MHz, 2--Carrier W--CDMA, 3.84 MHz Channel
Bandwidth
IM3, IM5, IM7 (dBc)
18
9
VDD = 28 Vdc
Pin = 0 dBm
IDQA = 550 mA
VGSB = 1.3 Vdc
6
3
0
1800
1835
1870
1905
1940
1975
2010
2045
Pout, OUTPUT POWER (WATTS) AVG.
f, FREQUENCY (MHz)
Figure 10. 2--Carrier W--CDMA Power Gain, IM3, IM5, IM7
versus Output Power
Figure 11. Broadband Frequency Response
2080
MRF8P20165WHR3 MRF8P20165WHSR3
8
RF Device Data
Freescale Semiconductor
W--CDMA TEST SIGNAL
--20
100
--40
--50
1
--60
Input Signal
(dB)
PROBABILITY (%)
10
0.1
--70
--80
0.01
--90
W--CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Input Signal PAR = 9.8 dB @ 0.01%
Probability on CCDF
0.001
0.0001
3.84 MHz
Channel BW
--30
0
2
4
6
--ACPR in
+ACPR in
3.84 MHz BW 3.84 MHz BW
--IM3 in
3.84 MHz BW
--100
--110
8
10
--120
--75
12
--60
--45
0
15
30
45
60
75
Figure 13. 2-Carrier W-CDMA Spectrum
Figure 12. CCDF W--CDMA IQ Magnitude
Clipping, 2--Carrier Test Signal
100
10
0
10
--10
3.84 MHz
Channel BW
--20
1
Input Signal
--30
0.1
(dB)
PROBABILITY (%)
--15
f, FREQUENCY (MHz)
PEAK--TO--AVERAGE (dB)
0.01
W--CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
0.001
0.0001
--30
+IM3 in
3.84 MHz BW
0
2
4
6
--40
--50
--60
+ACPR in 3.84 MHz
Integrated BW
--ACPR in 3.84 MHz
Integrated BW
--70
--80
8
10
PEAK--TO--AVERAGE (dB)
Figure 14. CCDF W--CDMA IQ Magnitude
Clipping, Single--Carrier Test Signal
12
--90
--100
--9
--7.2 --5.4
--3.6 --1.8
0
1.8
3.6
5.4
7.2
9
f, FREQUENCY (MHz)
Figure 15. Single--Carrier W--CDMA Spectrum
MRF8P20165WHR3 MRF8P20165WHSR3
RF Device Data
Freescale Semiconductor
9
VDD = 28 Vdc, IDQA = 550 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle
Max Output Power
P1dB
P3dB
f
(MHz)
Zsource
(Ω)
Zload (1)
(Ω)
(dBm)
(W)
ηD (%)
(dBm)
(W)
ηD (%)
1930
16.0 -- j8.99
1.58 -- j5.68
50.4
110
55.3
51.2
132
55.8
1960
17.2 -- j2.43
1.55 -- j6.08
50.4
110
54.4
51.3
135
53.5
1990
18.6 + j3.55
1.93 -- j5.82
50.4
110
54.4
51.2
132
55.4
(1) Load impedance for optimum P1dB power.
Zsource = Impedance as measured from gate contact to ground.
Zload = Impedance as measured from drain contact to ground.
Input
Load Pull
Tuner
Output
Load Pull
Tuner
Device
Under
Test
Z
source
Z
load
Figure 16. Carrier Side Load Pull Performance — Maximum P1dB Tuning
VDD = 28 Vdc, IDQA = 550 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle
Max Drain Efficiency
P1dB
P3dB
Zsource
(Ω)
Zload (1)
(Ω)
(dBm)
(W)
ηD (%)
(dBm)
(W)
ηD (%)
1930
16.0-- j8.99
3.45 -- j3.43
48.5
71
65.8
49.6
91
66.5
1960
17.2 -- j2.43
3.68 -- j3.88
48.7
74
65.6
49.6
91
66.1
1990
18.6 + j3.55
2.95-- j3.99
48.2
66
65.1
49.6
91
65.3
f
(MHz)
(1) Load impedance for optimum P1dB efficiency.
Zsource = Impedance as measured from gate contact to ground.
Zload = Impedance as measured from drain contact to ground.
Input
Load Pull
Tuner
Output
Load Pull
Tuner
Device
Under
Test
Z
source
Z
load
Figure 17. Carrier Side Load Pull Performance — Maximum Efficiency Tuning
MRF8P20165WHR3 MRF8P20165WHSR3
10
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
MRF8P20165WHR3 MRF8P20165WHSR3
RF Device Data
Freescale Semiconductor
11
MRF8P20165WHR3 MRF8P20165WHSR3
12
RF Device Data
Freescale Semiconductor
MRF8P20165WHR3 MRF8P20165WHSR3
RF Device Data
Freescale Semiconductor
13
MRF8P20165WHR3 MRF8P20165WHSR3
14
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following documents, Software and Tools to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• .s2p File
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
R5 TAPE AND REEL OPTION
R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel.
The R5 tape and reel option for MRF8P20165WH and MRF8P20165WHS parts will be available for 2 years after release of
MRF8P20165WH and MRF8P20165WHS. Freescale Semiconductor, Inc. reserves the right to limit the quantities that will be
delivered in the R5 tape and reel option. At the end of the 2 year period customers who have purchased these devices in the R5
tape and reel option will be offered MRF8P20165WH and MRF8P20165WHS in the R3 tape and reel option.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
0
Apr. 2011
Description
• Initial Release of Data Sheet
MRF8P20165WHR3 MRF8P20165WHSR3
RF Device Data
Freescale Semiconductor
15
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MRF8P20165WHR3 MRF8P20165WHSR3
Document Number: MRF8P20165WH
Rev. 0, 4/2011
16
RF Device Data
Freescale Semiconductor