Data Sheet

Freescale Semiconductor
Technical Data
Document Number: MRF5P21045N
Rev. 0, 4/2007
RF Power Field - Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
MRF5P21045NR1
Designed for W - CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. Dual path topology suitable for Doherty, quadrature, single - ended and
push - pull applications.
• Typical 2 - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 500 mA,
Pout = 10 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz,
PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 14.5 dB
Drain Efficiency — 25.5%
IM3 @ 10 MHz Offset — - 37 dBc in 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — - 39 dBc in 3.84 MHz Channel Bandwidth
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 45 Watts CW Output
Power
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• 200°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
2110 - 2170 MHz, 10 W AVG., 28 V
2 x W - CDMA, DUAL PATH
LATERAL N - CHANNEL
RF POWER MOSFET
CASE 1486 - 03, STYLE 1
TO - 270 WB - 4
RFinA/VGSA 3
2 RFoutA/VDSA
RFinB/VGSB 4
1 RFoutB/VDSB
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 1. Pin Connections
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
VDSS
- 0.5, +65
Vdc
Gate - Source Voltage
VGS
- 0.5, + 15
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 45 W CW
Case Temperature 77°C, 10 W CW
Symbol
RθJC
Value (1,2)
1.35
1.48
Unit
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF
calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2007. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF5P21045NR1
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1C (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Rating
Package Peak Temperature
Unit
3
260
°C
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 120 μAdc)
VGS(th)
2
—
3.5
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 500 mAdc)
VGS(Q)
—
3.8
—
Vdc
Fixture Gate Quiescent Voltage (2)
(VDD = 28 Vdc, ID = 500 mAdc, Measured in Functional Test)
VGG(Q)
6
7.6
10
Vdc
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 1.2 Adc)
VDS(on)
0.2
0.3
0.35
Vdc
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
0.9
—
pF
Output Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
124
—
pF
Input Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Ciss
—
247
—
pF
Off Characteristics
(1)
On Characteristics (1)
Dynamic Characteristics (1,3)
Functional Tests (1) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 500 mA, Pout = 10 W Avg., f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2 - Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured
in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01%
Probability on CCDF.
Power Gain
Gps
13.5
14.5
16.5
dB
Drain Efficiency
ηD
23.5
25.5
—
%
Intermodulation Distortion
Adjacent Channel Power Ratio
Input Return Loss
IM3
—
- 37
- 35
dBc
ACPR
—
- 39
- 37
dBc
IRL
—
- 12
-8
dB
1. Measurement made with device in single - ended configuration. (See Figure 4, Possible Circuit Topologies)
2. VGG = 2 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
schematic.
3. Part internally matched both on input and output.
MRF5P21045NR1
2
RF Device Data
Freescale Semiconductor
R1
VBIAS
VSUPPLY
R2
C1
C2
C4
Z7
+
C6
C5
C3
Z8
R3
RF
INPUT
Z1
Z2
Z3
Z4
Z5
Z6
Z14
Z9
Z10
Z11
Z12
C7
Z13
RF
OUTPUT
C12
C8
DUT
C9
C10
Z15
C11
C13
C14
Z1, Z13
Z2
Z3
Z4
Z5
Z6, Z8
Z7
0.250″ x 0.080″ Microstrip
1.012″ x 0.080″ Microstrip
0.165″ x 0.080″ Microstrip
0.378″ x 0.080″ Microstrip
0.365″ x 1.000″ Microstrip
0.115″ x 1.000″ Microstrip
0.510″ x 0.080″ Microstrip
Z9
Z10
Z11
Z12
Z14, Z15
PCB
C15
0.385″ x 1.000″ Microstrip
0.179″ x 0.080″ Microstrip
0.527″ x 0.080″ Microstrip
0.789″ x 0.080″ Microstrip
0.270″ x 0.080″ Microstrip
Taconic TLX8 - 0300, 0.030″, εr = 2.55
Figure 2. MRF5P21045NR1 Test Circuit Schematic — Single - Ended Configuration
Table 6. MRF5P21045NR1 Test Circuit Component Designations and Values — Single - Ended Configuration
Part
Description
Part Number
Manufacturer
C1
220 nF Chip Capacitor
18125C224KAT4A
AVX
C2, C3, C7, C12, C13
6.8 pF Chip Capacitors
ATC100B6R8BT500XT
ATC
C4, C5, C14, C15
6.8 μF Chip Capacitors
C4532X5R1H685MT
TDK
C6
220 μF, 63 V Electrolytic Capacitor, Radial
EMVY630ATR221MKE0S
Nippon Chemi - Con
C8, C10
1 pF Chip Capacitors
ATC100B1R0BT500XT
ATC
C9
1.5 pF Chip Capacitor
ATC100B1R5BT500XT
ATC
C11
0.5 pF Chip Capacitor
ATC100B0R5BT500XT
ATC
R1, R2
10 kΩ, 1/4 W Chip Resistors
CRCW12061001FKTA
Vishay
R3
10 Ω, 1/4 W Chip Resistor
CRCW120610R0FKTA
Vishay
MRF5P21045NR1
RF Device Data
Freescale Semiconductor
3
C1
C4 C5
C2
R1
C3
R2
R3
C6
C8
C12
CUT OUT AREA
C7
C9
C10
C11
C13
C14 C15
MRF5P21045N
Rev. 0
Figure 3. MRF5P21045NR1 Test Circuit Component Layout — Single - Ended Configuration
Single −ended
l
4
l
4
l
2
Quadrature combined
l
4
Doherty
l
2
Push −pull
Figure 4. Possible Circuit Topologies
MRF5P21045NR1
4
RF Device Data
Freescale Semiconductor
28
ηD
Gps, POWER GAIN (dB)
14.8
VDD = 28 Vdc, Pout = 10 W (Avg.)
IDQ = 500 mA, 2−Carrier W−CDMA
10 MHz Carrier Spacing, 3.84 MHz
Channel Bandwidth, PAR = 8.5 dB @
0.01% Probability (CCDF)
Gps
14.6
14.4
14.2
24
20
−28
IRL
14
−32
13.8
−36
IM3
−40
13.6
13.4
2060
ACPR
2080
2100
2120
2140
2160
2180
2200
−7
16
−44
2220
IM3 (dBc), ACPR (dBc)
15
−10
−13
−16
−19
−22
IRL, INPUT RETURN LOSS (dB)
32
15.2
ηD, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS
f, FREQUENCY (MHz)
Figure 5. 2 - Carrier W - CDMA Broadband Performance
@ Pout = 10 Watts Avg.
14.4
42
ηD
38
VDD = 28 Vdc, Pout = 20 W (Avg.)
IDQ = 500 mA, 2−Carrier W−CDMA
10 MHz Carrier Spacing, 3.84 MHz
Channel Bandwidth, PAR = 8.5 dB @
0.01% Probability (CCDF)
14.2
14
13.8
13.6
13.2
13
2060
−30
ACPR
2080
−18
−26
IM3
2100
2120 2140 2160
f, FREQUENCY (MHz)
2180
2200
−5
30
−22
IRL
13.4
34
−34
2220
−8
−11
−14
−17
−20
IRL, INPUT RETURN LOSS (dB)
Gps, POWER GAIN (dB)
14.6
IM3 (dBc), ACPR (dBc)
Gps
ηD, DRAIN
EFFICIENCY (%)
46
14.8
Figure 6. 2 - Carrier W - CDMA Broadband Performance
@ Pout = 20 Watts Avg.
17
Gps, POWER GAIN (dB)
16
650 mA
15
500 mA
14
350 mA
13
12
200 mA
11
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
−10
VDD = 28 Vdc
f1 = 2135 MHz, f2 = 2145 MHz
Two −Tone Measurements
IDQ = 800 mA
−20
650 mA
IDQ = 200 mA
−30
800 mA
−40
−50
500 mA
350 mA
VDD = 28 Vdc
f1 = 2135 MHz, f2 = 2145 MHz
Two −Tone Measurements
−60
−70
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 7. Two - Tone Power Gain versus
Output Power
300
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 8. Third Order Intermodulation Distortion
versus Output Power
MRF5P21045NR1
RF Device Data
Freescale Semiconductor
5
−20
VDD = 28 Vdc, Pout = 45 W (PEP), IDQ = 500 mA
Two −Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
Pout, OUTPUT POWER (dBm)
−30
IM3 −L
IM3 −U
−40
IM5 −U
IM5 −L
−50
IM7 −L
IM7 −U
−60
0.1
1
100
10
55
54
53
52
51
50
49
48
47
46
45
44
43
42
Ideal
P6dB = 47.74 dBm (74.82 W)
P3dB = 48.38 dBm (68.8 W)
P1dB = 47.78 dBm (60.1 W)
Actual
VDD = 28 Vdc, IDQ = 500 mA
Pulsed CW, 12 μsec(on), 1% Duty Cycle
f = 2140 MHz
28
29
31
30
33
32
34
35
36
37
38
39
Pin, INPUT POWER (dBm)
Figure 10. Pulsed CW Output Power versus
Input Power
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
TWO −TONE SPACING (MHz)
Figure 9. Intermodulation Distortion Products
versus Tone Spacing
50
−30_C
VDD = 28 Vdc, IDQ = 500 mA
f1 = 2135 MHz, f2 = 2145 MHz
2−Carrier W−CDMA, 10 MHz
Carrier Spacing, 3.84 MHz
Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
45
40
35
30
−10
25_C
85_C 25_C
−30_C
25_C
−15
−20
−25
−30_C
−30
−35
25
20
−40
Gps
TC = −30_C
15
IM3
10
5
85_C
ACPR
ηD
1
25_C
40
IM3 (dBc), ACPR (dBc)
IMD, INTERMODULATION DISTORTION (dBc)
TYPICAL CHARACTERISTICS
−45
−50
−55
100
10
Pout, OUTPUT POWER (WATTS) CW
Figure 11. 2 - Carrier W - CDMA ACPR, IM3, Power Gain
and Drain Efficiency versus Output Power
17
70
TC = −30_C
15
Gps
14
25_C
25_C
50
85_C
40
30
13
12
11
10
0.1
60
20
VDD = 28 Vdc
IDQ = 500 mA
f = 2140 MHz
ηD
1
ηD, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
16
−30_C
85_C
10
10
0
100
Pout, OUTPUT POWER (WATTS) CW
Figure 12. Power Gain and Drain Efficiency
versus CW Output Power
MRF5P21045NR1
6
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
16
108
MTTF (HOURS)
Gps, POWER GAIN (dB)
14
12
28 V
VDD = 24 V
32 V
10
107
106
IDQ = 500 mA
f = 2140 MHz
8
105
6
0
10
20
30
40
50
60
70
80
90
110
130
Pout, OUTPUT POWER (WATTS) CW
150
170
190
210
230
250
TJ, JUNCTION TEMPERATURE (°C)
Figure 13. Power Gain versus Output Power
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 28 Vdc, Pout = 10 W Avg., and ηD = 25.5%.
MTTF calculator available at http:/www.freescale.com/rf. Select Tools/
Software/Application Software/Calculators to access the MTTF calcu−
lators by product.
Figure 14. MTTF versus Junction Temperature
W - CDMA TEST SIGNAL
100
+20
3.84 MHz
Channel BW
+30
0
−10
1
(dB)
PROBABILITY (%)
10
0.1
W−CDMA. ACPR Measured in 3.84 MHz Channel
Bandwidth @ $5 MHz Offset. IM3 Measured in
3.84 MHz Bandwidth @ $10 MHz Offset. PAR =
8.5 dB @ 0.01% Probability on CCDF
0.01
−50
4
6
−70
−ACPR in
+ACPR in
3.84 MHz BW 3.84 MHz BW
−IM3 in
3.84 MHz BW
−80
−25
−20
−60
0.0001
2
−30
−40
0.001
0
−20
8
10
PEAK −TO−AVERAGE (dB)
Figure 15. CCDF W - CDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping, Single - Carrier Test Signal
−15
−10
−5
0
5
10
+IM3 in
3.84 MHz BW
15
20
25
f, FREQUENCY (MHz)
Figure 16. 2-Carrier W-CDMA Spectrum
MRF5P21045NR1
RF Device Data
Freescale Semiconductor
7
Zo = 10 Ω
f = 2220 MHz
f = 2060 MHz
Zload
f = 2060 MHz
Zsource
f = 2220 MHz
VDD = 28 Vdc, IDQ = 500 mA, Pout = 10 W Avg.
f
MHz
Zsource
W
Zload
W
2060
8.01 - j6.68
4.38 - j4.62
2080
7.66 - j6.94
4.27 - j4.43
2100
7.26 - j7.20
4.12 - j4.04
2120
6.76 - j7.45
3.98 - j3.90
2140
6.28 - j7.71
3.81 - j3.69
2160
5.82 - j7.78
3.73 - j3.50
2180
5.37 - j7.85
3.65 - j3.30
2200
4.92 - j7.85
3.57 - j3.11
2220
4.46 - j7.97
3.49 - j2.92
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 17. Series Equivalent Source and Load Impedance — Single - Ended Configuration
MRF5P21045NR1
8
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
E1
B
A
2X
E3
GATE LEAD
DRAIN LEAD
D
D1
4X
e
4X
b1
aaa M C A
2X
2X
D2
c1
E
H
DATUM
PLANE
F
ZONE J
A
A1
2X
A2
E2
NOTE 7
E5
E4
4
D3
3
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
E5
BOTTOM VIEW
C
SEATING
PLANE
PIN 5
NOTE 8
1
2
CASE 1486 - 03
ISSUE C
TO - 270 WB - 4
PLASTIC
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M−1994.
3. DATUM PLANE −H− IS LOCATED AT THE TOP OF
LEAD AND IS COINCIDENT WITH THE LEAD
WHERE THE LEAD EXITS THE PLASTIC BODY AT
THE TOP OF THE PARTING LINE.
4. DIMENSIONS “D" AND “E1" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 PER SIDE. DIMENSIONS “D" AND “E1" DO
INCLUDE MOLD MISMATCH AND ARE DETER−
MINED AT DATUM PLANE −H−.
5. DIMENSION “b1" DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE .005 TOTAL IN EXCESS
OF THE “b1" DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. DATUMS −A− AND −B− TO BE DETERMINED AT
DATUM PLANE −H−.
7. DIMENSION A2 APPLIES WITHIN ZONE “J" ONLY.
8. HATCHING REPRESENTS THE EXPOSED AREA
OF THE HEAT SLUG.
DIM
A
A1
A2
D
D1
D2
D3
E
E1
E2
E3
E4
E5
F
b1
c1
e
aaa
INCHES
MIN
MAX
.100
.104
.039
.043
.040
.042
.712
.720
.688
.692
.011
.019
.600
−−−
.551
.559
.353
.357
.132
.140
.124
.132
.270
−−−
.346
.350
.025 BSC
.164
.170
.007
.011
.106 BSC
.004
STYLE 1:
PIN 1.
2.
3.
4.
5.
MILLIMETERS
MIN
MAX
2.54
2.64
0.99
1.09
1.02
1.07
18.08
18.29
17.48
17.58
0.28
0.48
15.24
−−−
14
14.2
8.97
9.07
3.35
3.56
3.15
3.35
6.86
−−−
8.79
8.89
0.64 BSC
4.17
4.32
0.18
0.28
2.69 BSC
0.10
DRAIN
DRAIN
GATE
GATE
SOURCE
MRF5P21045NR1
RF Device Data
Freescale Semiconductor
9
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
• AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over - Molded Plastic Packages
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
0
April 2007
Description
• Initial Release of Data Sheet
MRF5P21045NR1
10
RF Device Data
Freescale Semiconductor
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unintended or unauthorized use, even if such claim alleges that Freescale
Semiconductor was negligent regarding the design or manufacture of the part.
Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc.
All other product or service names are the property of their respective owners.
© Freescale Semiconductor, Inc. 2007. All rights reserved.
MRF5P21045NR1
Document
Number:
RF
Device
Data MRF5P21045N
Rev. 0, 4/2007
Freescale
Semiconductor
11