Data Sheet

Freescale Semiconductor
Technical Data
Document Number: MD7IC2251N
Rev. 0, 5/2012
RF LDMOS Wideband Integrated
Power Amplifiers
The MD7IC2251N wideband integrated circuit is designed with on--chip
matching that makes it usable from 2110 -- 2170 MHz. This multi -- stage
structure is rated for 26 to 32 volt operation and covers all typical cellular
base station modulation formats.
• Typical Doherty Single--Carrier W--CDMA Characterization Performance:
VDD = 28 Volts, IDQ1(A+B) = 80 mA, IDQ2A = 260 mA, VGS2B = 1.4 Vdc,
Pout = 12 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz,
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency
Gps
(dB)
PAE
(%)
Output PAR
(dB)
ACPR
(dBc)
2110 MHz
28.8
38.2
7.1
--34.6
2140 MHz
29.0
37.9
7.1
--36.2
2170 MHz
29.2
37.4
6.9
--36.1
MD7IC2251NR1
MD7IC2251GNR1
2110--2170 MHz, 12 W AVG., 28 V
SINGLE W--CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
TO--270 WB--14
PLASTIC
MD7IC2251NR1
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 63 Watts CW
Output Power (3 dB Input Overdrive from Rated Pout)
• Typical Pout @ 3 dB Compression Point ≃ 58 Watts (1)
Features
TO--270 WB--14 GULL
PLASTIC
MD7IC2251GNR1
• 100% PAR Tested for Guaranteed Output Power Capability
•
•
•
•
•
•
•
Production Tested in a Symmetrical Doherty Configuration
Characterized with Large--Signal Load--Pull Parameters and Common Source S--Parameters
On--Chip Matching (50 Ohm Input, DC Blocked)
Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (2)
Integrated ESD Protection
225°C Capable Plastic Package
In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel.
VDS1A
CARRIER (3)
RFinA
VGS1A
VGS2A
VGS1B
VGS2B
RFout1/VDS2A
Quiescent Current
Temperature Compensation (2)
Quiescent Current
Temperature Compensation (2)
PEAKING (3)
RFinB
RFout2/VDS2B
VDS1A
VGS2A
VGS1A
RFinA
NC
NC
NC
NC
RFinB
VGS1B
VGS2B
VDS1B
Carrier
1
2
14
3
4
5
6
7
8
9
13
10
11
12 Peaking
RFout1/VDS2A
RFout2/VDS2B
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistors.
VDS1B
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. P3dB = Pavg + 7.0 dB where Pavg is the average output power measured using an unclipped W--CDMA single--carrier input signal where output
PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
2. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or AN1987.
3. Peaking and Carrier orientation is determined by the test fixture design.
© Freescale Semiconductor, Inc., 2012. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
MD7IC2251NR1 MD7IC2251GNR1
1
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain--Source Voltage
Rating
VDS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
--0.5, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
-- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
Input Power
Pin
28
dBm
Symbol
Value (2,3)
Unit
Table 2. Thermal Characteristics
Characteristic
Final Doherty Application
RθJC
Thermal Resistance, Junction to Case
Case Temperature 78°C, Pout = 12 W CW
Stage 1, 28 Vdc, IDQ1(A+B) = 80 mA
Stage 2, 28 Vdc, IDQ2A = 260 mA, VGS2B = 1.4 Vdc
Case Temperature 89°C, Pout = 50 W CW
Stage 1, 28 Vdc, IDQ1(A+B) = 80 mA
Stage 2, 28 Vdc, IDQ2A = 260 mA, VGS2B = 1.4 Vdc
°C/W
4.8
1.5
3.7
1.0
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
1A
Machine Model (per EIA/JESD22--A115)
A
Charge Device Model (per JESD22--C101)
II
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
Package Peak Temperature
Unit
3
260
°C
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate--Source Leakage Current
(VGS = 1.5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 23 μAdc)
VGS(th)
1.2
2.0
2.7
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, IDQ1(A+B) = 80 mAdc)
VGS(Q)
—
2.7
—
Vdc
Fixture Gate Quiescent Voltage
(VDD = 28 Vdc, IDQ1(A+B) = 80 mAdc, Measured in Functional Test)
VGG(Q)
6.0
7.0
8.0
Vdc
Characteristic
Stage 1 -- Off Characteristics
(4)
Stage 1 -- On Characteristics (4)
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
4. Each side of device measured separately.
(continued)
MD7IC2251NR1 MD7IC2251GNR1
2
RF Device Data
Freescale Semiconductor, Inc.
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate--Source Leakage Current
(VGS = 1.5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 150 μAdc)
VGS(th)
1.2
2.0
2.7
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, IDQ2A = 260 mAdc)
VGSA(Q)
—
2.7
—
Vdc
Fixture Gate Quiescent Voltage
(VDD = 28 Vdc, IDQ2A = 260 mAdc, Measured in Functional Test)
VGGA(Q)
5.5
6.3
7.5
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 1 Adc)
VDS(on)
0.1
0.24
1.2
Vdc
Stage 2 -- Off Characteristics (1)
Stage 2 -- On Characteristics (1)
Functional Tests (2,3,4) (In Freescale Doherty Production Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1(A+B) = 80 mA, IDQ2A = 260 mA,
VGS2B = 1.4 Vdc, Pout = 12 W Avg., f = 2140 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Power Gain
Gps
27.6
28.2
32.0
dB
Power Added Efficiency
PAE
33.5
36.9
—
%
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
PAR
6.2
6.6
—
dB
ACPR
—
--34.2
--31.5
dBc
Adjacent Channel Power Ratio
Typical Broadband Performance (In Freescale Doherty Characterization Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1(A+B) = 80 mA,
IDQ2A = 260 mA, VGS2B = 1.4 Vdc, Pout = 12 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
1.
2.
3.
4.
Frequency
Gps
(dB)
PAE
(%)
Output PAR
(dB)
ACPR
(dBc)
2110 MHz
28.8
38.2
7.1
--34.6
2140 MHz
29.0
37.9
7.1
--36.2
2170 MHz
29.2
37.4
6.9
--36.1
Each side of device measured separately.
Part internally matched both on input and output.
Measurement made with device in a Symmetrical Doherty configuration.
Measurement made with device in straight lead configuration before any lead forming operation is applied.
(continued)
MD7IC2251NR1 MD7IC2251GNR1
RF Device Data
Freescale Semiconductor, Inc.
3
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances (1) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1(A+B) = 80 mA, IDQ2A = 260 mA, VGS2B =
1.4 Vdc, 2110--2170 MHz Bandwidth
Pout @ 1 dB Compression Point, CW
P1dB
—
40
—
W
Pout @ 3 dB Compression Point (2)
P3dB
—
58
—
W
IMD Symmetry @ 18 W PEP, Pout where IMD Third Order
Intermodulation  30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
—
25
—
MHz
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres
—
65
—
MHz
—
—
1.5
5.0
—
—
Quiescent Current Accuracy over Temperature
with 4.7 kΩ Gate Feed Resistors (--30 to 85°C) (3)
Stage 1
Stage 2
∆IQT
%
Gain Flatness in 60 MHz Bandwidth @ Pout = 12 W Avg.
GF
—
0.2
—
dB
Gain Variation over Temperature
(--30°C to +85°C)
∆G
—
0.028
—
dB/°C
∆P1dB
—
0.028
—
dB/°C
Output Power Variation over Temperature
(--30°C to +85°C)
1. Measurement made with device in a Symmetrical Doherty configuration.
2. P3dB = Pavg + 7.0 dB where Pavg is the average output power measured using an unclipped W--CDMA single--carrier input signal where
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
3. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or
AN1987.
MD7IC2251NR1 MD7IC2251GNR1
4
RF Device Data
Freescale Semiconductor, Inc.
VGS1A
VGS2A
VDS2A
VDS1A
C1
R2
C23
R1
C9
C7
C13
C3
C19
C15
CUT OUT AREA
C16
Z1
R5
C17
C20
R3
C22
C4
C11
C
P
C18
C5
C8
C21
C12
C10
C6
C14
MD7IC2251N
Rev. 1
R4
C2
VGS1B
VGS2B
VDS2B
VDS1B
Figure 3. MD7IC2251NR1(GNR1) Production Test Circuit Component Layout
Table 6. MD7IC2251NR1(GNR1) Production Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C2, C3, C4, C5, C6
10 μF Chip Capacitors
GRM55DR61H106KA88L
Murata
C7, C8
4.7 pF Chip Capacitors
ATC600F4R7BT250XT
ATC
C9, C10
5.6 pF Chip Capacitors
ATC600F5R6BT250XT
ATC
C11, C12
39 pF Chip Capacitors
ATC600F390JT250XT
ATC
C13, C14, C15, C16, C17, C18
4.7 μF Chip Capacitors
GRM31CR71H475KA12L
Murata
C19, C20
0.5 pF Chip Capacitors
ATC600F0R5BT250XT
ATC
C21
0.9 pF Chip Capacitor
ATC600F0R9BT250XT
ATC
C22, C23
1.0 μF Chip Capacitors
GRM31CR71H105KA12L
Murata
R1, R2, R3, R4
4.7 kΩ, 1/4 W Chip Resistors
CRCW12064K70FKEA
Vishay
R5
50 Ω, 10 W, Termination
RFP-06012A15Z50
Anaren
Z1
2100--2200 MHz, 90°, 3 dB Chip Hybrid Coupler
GSC355-HYB2150
Soshin
PCB
0.020″, εr = 3.5
RF-35A2
Taconic
MD7IC2251NR1 MD7IC2251GNR1
RF Device Data
Freescale Semiconductor, Inc.
5
VGS1A
VGS2A
VDS2A
VDS1A
C1
R2
C23
R1
C9
C7
C13
C3
C16
Z1
R5
C17
C20
R3
C22
C4
C11
CUT OUT AREA
C19
C15
C
P
C18
C5
C8
C21
C12
C10
C6
C14
MD7IC2251N
Rev. 1
R4
C2
VGS1B
VGS2B
VDS2B
VDS1B
Figure 4. MD7IC2251NR1(GNR1) Characterization Test Circuit Component Layout
Table 7. MD7IC2251NR1(GNR1) Characterization Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C2, C3, C4, C5, C6
10 μF Chip Capacitors
GRM55DR61H106KA88L
Murata
C7, C8
4.7 pF Chip Capacitors
ATC600F4R7BT250XT
ATC
C9, C10
5.6 pF Chip Capacitors
ATC600F5R6BT250XT
ATC
C11, C12
39 pF Chip Capacitors
ATC600F390JT250XT
ATC
C13, C14, C15, C16, C17, C18
4.7 μF Chip Capacitors
GRM31CR71H475KA12L
Murata
C19, C20
0.5 pF Chip Capacitors
ATC600F0R5BT250XT
ATC
C21
0.9 pF Chip Capacitor
ATC600F0R9BT250XT
ATC
C22, C23
1.0 μF Chip Capacitors
GRM31CR71H105KA12L
Murata
R1, R2, R3, R4
4.7 kΩ, 1/4 W Chip Resistors
CRCW12064K70FKEA
Vishay
R5
50 Ω, 10 W, Termination
RFP-06012A15Z50
Anaren
Z1
2100--2200 MHz, 90°, 3 dB Chip Hybrid Coupler
GSC355-HYB2150
Soshin
PCB
0.020″, εr = 3.5
RF-35A2
Taconic
MD7IC2251NR1 MD7IC2251GNR1
6
RF Device Data
Freescale Semiconductor, Inc.
VDD = 28 Vdc, Pout = 12 W (Avg.)
IDQ1(A+B) = 80 mA, IDQ2A = 260 mA
VGS2B = 1.4 Vdc, Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth
Gps, POWER GAIN (dB)
30.2
29.8
29.4
29
35
33
31
Gps
Input Signal PAR = 9.9 dB @
0.01% Probability on CCDF
28.6
37
--30
0
--32
--1
28.2
ACPR --34
27.8
--36
27.4
PARC --38
27
2060
2080
2100
2120
2140
2160
2180
2200
--40
2220
--2
--3
--4
PARC (dB)
39
PAE
ACPR (dBc)
31
30.6
PAE, POWER ADDED
EFFICIENCY (%)
TYPICAL CHARACTERISTICS
--5
f, FREQUENCY (MHz)
IMD, INTERMODULATION DISTORTION (dBc)
Figure 5. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ Pout = 12 Watts Avg.
--20
IM3--L
--30
IM3--U
--40
IM5--U
IM5--L
--50
VDD = 28 Vdc, Pout = 18 W (PEP)
IDQ1(A+B) = 80 mA, IDQ2A = 260 mA
--60
--70
VGS2B = 1.4 Vdc, Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
1
IM7--U
IM7--L
100
10
TWO--TONE SPACING (MHz)
Figure 6. Intermodulation Distortion Products
versus Two--Tone Spacing
27
26
25
24
--1
--2
--3
--4
--3 dB = 12.5 W
--5
--6
46
--1 dB = 7.2 W
--2 dB = 9.9 W
ACPR
42
VDD = 28 Vdc, IDQ1(A+B) = 80 mA
IDQ2A = 260 mA, VGS2B = 1.4 Vdc
f = 2140 MHz, Single--Carrier
W--CDMA
5
10
15
20
38
34
30
3.84 MHz Channel Bandwidth, Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF
--20
50
PAE
PARC
26
25
--25
--30
--35
ACPR (dBc)
28
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
Gps, POWER GAIN (dB)
29
Gps
PAE, POWER ADDED EFFICIENCY (%)
0
30
--40
--45
--50
30
Pout, OUTPUT POWER (WATTS)
Figure 7. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
MD7IC2251NR1 MD7IC2251GNR1
RF Device Data
Freescale Semiconductor, Inc.
7
TYPICAL CHARACTERISTICS
Gps, POWER GAIN (dB)
30
ACPR
PAE
29 Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB
28 @ 0.01% Probability
on CCDF
2140 MHz
60
50
40
2110 MHz
2170 MHz
2110 MHz
27
20
2140 MHz
2170 MHz
26
Gps
10
0
100
25
10
1
30
--20
--25
--30
ACPR (dBc)
VDD = 28 Vdc, IDQ1(A+B) = 80 mA
IDQ2A = 260 mA, VGS2B = 1.4 Vdc
PAE, POWER ADDED EFFICIENCY (%)
31
--35
--40
--45
--50
Pout, OUTPUT POWER (WATTS) AVG.
Figure 8. Single--Carrier W--CDMA Power Gain, Power
Added Efficiency and ACPR versus Output Power
36
30
Gain
GAIN (dB)
24
18
VDD = 28 Vdc
Pin = 0 dBm
IDQ1(A+B) = 80 mA
IDQ2A = 260 mA
VGS2B = 1.4 Vdc
12
6
0
1800
1900
2000
2100
2200
2300
2400
2500
2600
f, FREQUENCY (MHz)
Figure 9. Broadband Frequency Response
W--CDMA TEST SIGNAL
100
10
0
--10
Input Signal
--30
0.1
0.01
W--CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
0.001
0.0001
3.84 MHz
Channel BW
--20
1
(dB)
PROBABILITY (%)
10
0
2
4
6
--40
--50
--60
+ACPR in 3.84 MHz
Integrated BW
--ACPR in 3.84 MHz
Integrated BW
--70
--80
8
10
PEAK--TO--AVERAGE (dB)
Figure 10. CCDF W--CDMA IQ Magnitude
Clipping, Single--Carrier Test Signal
12
--90
--100
--9
--7.2 --5.4
--3.6 --1.8
0
1.8
3.6
5.4
7.2
9
f, FREQUENCY (MHz)
Figure 11. Single--Carrier W--CDMA Spectrum
MD7IC2251NR1 MD7IC2251GNR1
8
RF Device Data
Freescale Semiconductor, Inc.
VDD = 28 Vdc, IDQ1(A+B) = 80 mA, IDQ2A = 260 mA, CW
Max Output Power
P1dB
P3dB
f
(MHz)
Zin
(Ω)
Zload (1)
(Ω)
(dBm)
(W)
PAE (%)
(dBm)
(W)
PAE (%)
2110
68.0 – j42.0
7.20 – j14.0
45.8
38
52.2
46.4
44
53.1
2140
60.6 – j37.0
7.40 – j14.4
45.7
37
51.9
46.4
44
52.7
2170
54.0 – j31.0
7.30 – j14.7
45.7
37
51.6
46.4
44
52.2
(1) Load impedance for optimum P1dB power.
Zin = Impedance as measured from input contact to ground.
Zload = Impedance as measured from drain contact to ground.
Output
Load Pull
Tuner
Device
Under
Test
Zload
Zin
Figure 12. Carrier Side Load Pull Performance — Maximum P1dB Tuning
VDD = 28 Vdc, IDQ1(A+B) = 80 mA, IDQ2A = 260 mA, CW
Max Power Added Efficiency
P1dB
P3dB
f
(MHz)
Zin
(Ω)
Zload (1)
(Ω)
(dBm)
(W)
PAE (%)
(dBm)
(W)
PAE (%)
2110
60.0 – j53.0
9.10 – j8.80
44.4
28
58.1
45.0
32.0
57.6
2140
54.0 – j46.0
8.20 – j9.10
44.4
28
57.6
44.9
31.0
57.0
2170
48.0 – j39.0
7.90 – j9.60
44.4
28
57.4
45.0
32.0
56.7
(1) Load impedance for optimum P1dB efficiency.
Zin = Impedance as measured from input contact to ground.
Zload = Impedance as measured from drain contact to ground.
Output
Load Pull
Tuner
Device
Under
Test
Zin
Zload
Figure 13. Carrier Side Load Pull Performance — Maximum Power Added Efficiency Tuning
MD7IC2251NR1 MD7IC2251GNR1
RF Device Data
Freescale Semiconductor, Inc.
9
PACKAGE DIMENSIONS
MD7IC2251NR1 MD7IC2251GNR1
10
RF Device Data
Freescale Semiconductor, Inc.
MD7IC2251NR1 MD7IC2251GNR1
RF Device Data
Freescale Semiconductor, Inc.
11
MD7IC2251NR1 MD7IC2251GNR1
12
RF Device Data
Freescale Semiconductor, Inc.
MD7IC2251NR1 MD7IC2251GNR1
RF Device Data
Freescale Semiconductor, Inc.
13
MD7IC2251NR1 MD7IC2251GNR1
14
RF Device Data
Freescale Semiconductor, Inc.
MD7IC2251NR1 MD7IC2251GNR1
RF Device Data
Freescale Semiconductor, Inc.
15
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following documents, software and tools to aid your design process.
Application Notes
• AN1907: Solder Reflow Attach Method for High Power RF Devices in Over--Molded Plastic Packages
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
• AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
• AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family
• AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
• RF High Power Model
• .s2p File
Development Tools
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REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
0
May 2012
Description
• Initial Release of Data Sheet
MD7IC2251NR1 MD7IC2251GNR1
16
RF Device Data
Freescale Semiconductor, Inc.
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E 2012 Freescale Semiconductor, Inc.
MD7IC2251NR1 MD7IC2251GNR1
Document
Number:
RF
Device
Data MD7IC2251N
Rev. 0, 5/2012
Freescale
Semiconductor, Inc.
17