Data Sheet

Freescale Semiconductor
Technical Data
Document Number: MRF7S21080H
Rev. 1, 3/2011
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
MRF7S21080HR3
MRF7S21080HSR3
Designed for CDMA base station applications with frequencies from 2110 to
2170 MHz. Suitable for CDMA and multicarrier amplifier applications. To be
used in Class AB and Class C for TD--SCDMA and PCN--PCS/cellular radio
applications.
• Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ =
800 mA, Pout = 22 Watts Avg., f = 2167.5 MHz, IQ Magnitude Clipping,
Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF.
Power Gain — 18 dB
Drain Efficiency — 32%
Device Output Signal PAR — 6.5 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset — --38 dBc in 3.84 MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 80 Watts CW
Peak Tuned Output Power
• Pout @ 1 dB Compression Point ≃ 80 Watts CW
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
• Designed for Digital Predistortion Error Correction Systems
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.
2110--2170 MHz, 22 W AVG., 28 V
SINGLE W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFETs
CASE 465--06, STYLE 1
NI--780
MRF7S21080HR3
CASE 465A--06, STYLE 1
NI--780S
MRF7S21080HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
-- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
Symbol
Value (2,3)
Unit
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 79°C, 79 W CW
Case Temperature 75°C, 22 W CW
RθJC
0.60
0.65
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
© Freescale Semiconductor, Inc., 2007, 2011. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF7S21080HR3 MRF7S21080HSR3
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
1C (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 174 μAdc)
VGS(th)
1.5
2
3
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 800 mAdc)
VGS(Q)
—
2.7
—
Vdc
Fixture Gate Quiescent Voltage (1)
(VDD = 28 Vdc, ID = 800 mAdc, Measured in Functional Test)
VGG(Q)
4
5.5
7
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 1.74 Adc)
VDS(on)
0.1
0.2
0.3
Vdc
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
0.64
—
pF
Output Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
296
—
pF
Input Capacitance
(VDS = 28 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
Ciss
—
160
—
pF
Characteristic
Off Characteristics
On Characteristics
Dynamic Characteristics (2)
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 800 mA, Pout = 22 W Avg., f = 2167.5 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel
Bandwidth @ ±5 MHz Offset.
Power Gain
Gps
16.5
18
19.5
dB
Drain Efficiency
ηD
30
32
—
%
PAR
5.7
6.5
—
dB
ACPR
—
--38
--35
dBc
IRL
—
--16
--9
dB
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
1. VGG = 2 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
schematic.
2. Part internally matched both on input and output.
(continued)
MRF7S21080HR3 MRF7S21080HSR3
2
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 800 mA, 2110--2170 MHz Bandwidth
Video Bandwidth @ 70 W PEP Pout where IM3 = --30 dBc
(Tone Spacing from 100 kHz to VBW)
∆IMD3 = IMD3 @ VBW frequency -- IMD3 @ 100 kHz <1 dBc (both
sidebands)
VBW
MHz
—
10
—
Gain Flatness in 60 MHz Bandwidth @ Pout = 22 W Avg.
GF
—
0.12
—
dB
Average Deviation from Linear Phase in 60 MHz Bandwidth
@ Pout = 80 W CW
Φ
—
22.3
—
°
Delay
—
6.21
—
ns
Part--to--Part Insertion Phase Variation @ Pout = 80 W CW,
f = 2140 MHz, Six Sigma Window
∆Φ
—
151.6
—
°
Gain Variation over Temperature
(--30°C to +85°C)
∆G
—
0.009
—
dB/°C
∆P1dB
—
0.008
—
dB/°C
Average Group Delay @ Pout = 80 W CW, f = 2140 MHz
Output Power Variation over Temperature
(--30°C to +85°C)
MRF7S21080HR3 MRF7S21080HSR3
RF Device Data
Freescale Semiconductor
3
Z15
R1
VBIAS
VSUPPLY
R2
C5
+
C4
C3
C10
Z14
R3
RF
INPUT
Z1
Z2
Z3
Z4
C1
C17
C2
C12
C13
C16
Z6
Z7
Z5
Z8
Z9
Z10
Z11
Z12
Z13
RF
OUTPUT
C9
DUT
C6
C7
C8
Z16
C11
Z1
Z2*
Z3*
Z4*
Z5
Z6
Z7
Z8
Z9*
0.325″ x 0.083″ Microstrip
0.921″ x 0.083″ Microstrip
0.126″ x 0.083″ Microstrip
0.645″ x 0.083″ Microstrip
0.275″ x 0.669″ Microstrip
0.114″ x 0.764″ Microstrip
0.374″ x 0.764″ Microstrip
0.180″ x 0.524″ Microstrip
0.075″ x 0.083″ Microstrip
Z10*
Z11*
Z12*
Z13
Z14*
Z15, Z16*
PCB
C14
C15
0.457″ x 0.083″ Microstrip
0.118″ x 0.083″ Microstrip
0.206″ x 0.083″ Microstrip
0.301″ x 0.083″ Microstrip
1.220″ x 0.080″ Microstrip
0.720″ x 0.080″ Microstrip
Taconic TLX8--0300, 0.030″, εr = 2.55
* Variable for tuning
Figure 1. MRF7S21080HR3(HSR3) Test Circuit Schematic
Table 5. MRF7S21080HR3(HSR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C3, C9, C10, C11
6.8 pF Chip Capacitors
ATC100B6R8BT500XT
ATC
C2
0.5 pF Chip Capacitor
ATC100B0R5BT500XT
ATC
C4
220 nF Chip Capacitor
18125C224KAT1A
AVX
C5, C12, C13, C14, C15
10 μF, 50 V Chip Capacitors
C5750X5R1H106M
TDK
C6
1.5 pF Chip Capacitor
ATC100B1R5BT500XT
ATC
C7, C8, C17
0.2 pF Chip Capacitors
ATC100B0R2BT500XT
ATC
C16
220 μF, 63 V Electrolytic Capacitor, Radial
222213668221
Vishay
R1, R2
2 KΩ, 1/4 W Chip Resistors
CRCW12062001FKEA
Vishay
R3
10 Ω, 1/4 W Chip Resistor
CRCW120610R0FKEA
Vishay
MRF7S21080HR3 MRF7S21080HSR3
4
RF Device Data
Freescale Semiconductor
R2
VGS
R1
C4
C12
VDD
C13
C3
C5
C10
C16
C17 C2
CUT OUT AREA
R3
C1
C6
C7 C8
C9
C11
C14
C15
MRF7S21080H
Rev. 1
Figure 2. MRF7S21080HR3(HSR3) Test Circuit Component Layout
MRF7S21080HR3 MRF7S21080HSR3
RF Device Data
Freescale Semiconductor
5
18.8
33
ηD
32
Gps, POWER GAIN (dB)
18.6
18.4
31
Gps
18.2
30
VDD = 28 Vdc, Pout = 22 W (Avg.), IDQ = 800 mA
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability (CCDF)
18
17.8
0
--4
--0.5
--8
17.6
--1
17.4 PARC
--1.5
IRL
17.2
17
2060
2080
2100
2120
--2
2140
2160
2180
--16
--20
--2.5
2220
2200
--12
--24
IRL, INPUT RETURN LOSS (dB)
34
PARC (dB)
19
ηD, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS
f, FREQUENCY (MHz)
45
ηD
44
43
17.8
17.6
Gps
17.4
17.2
17
42
41
VDD = 28 Vdc, Pout = 40 W (Avg.), IDQ = 800 mA
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability (CCDF)
--4
--2.5
--8
--3
16.8
16.6 PARC
16.4
2060
--2
2080
--3.5
IRL
2100
2120
2140
2160
2180
PARC (dB)
Gps, POWER GAIN (dB)
18
--4
2220
2200
--12
--16
--20
IRL, INPUT RETURN LOSS (dB)
18.2
ηD, DRAIN
EFFICIENCY (%)
Figure 3. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ Pout = 22 Watts Avg.
f, FREQUENCY (MHz)
Figure 4. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ Pout = 40 Watts Avg.
1000 mA
Gps, POWER GAIN (dB)
19
18
--10
IDQ = 1200 mA
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
20
800 mA
17
600 mA
16
15
400 mA
VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two--Tone Measurements, 10 MHz Tone Spacing
14
13
1
10
100
200
VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two--Tone Measurements, 10 MHz Tone Spacing
--20
IDQ = 400 mA
--30
600 mA
1200 mA
--40
1000 mA
--50
--60
800 mA
1
100
10
200
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two--Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF7S21080HR3 MRF7S21080HSR3
6
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
VDD = 28 Vdc, IDQ = 800 mA
f1 = 2135 MHz, f2 = 2145 MHz
Two--Tone Measurements, 10 MHz Tone Spacing
--30
--40
--50
3rd Order
5th Order
--60
7th Order
--70
1
10
100
400
--10
VDD = 28 Vdc, Pout = 70 W (PEP), IDQ = 800 mA
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
--20
IM3--L
--30
IM3--U
IM5--U
--40
IM5--L
--50
IM7--U
IM7--L
--60
--70
10
1
100
Pout, OUTPUT POWER (WATTS) PEP
TWO--TONE SPACING (MHz)
Figure 7. Intermodulation Distortion Products
versus Output Power
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
OUTPUT COMPRESSION AT THE 0.01%
PROBABILITY ON CCDF (dB)
1
70
Ideal
0
--1
50
--1 dB = 21.65 W
--2
40
--2 dB = 20.9 W
30
--3
--4
20
--3 dB = 39.9 W
Actual
VDD = 28 Vdc, IDQ = 800 mA
f = 2140 MHz, Input Signal PAR = 7.5 dB
--5
--6
60
20
10
30
40
ηD, DRAIN EFFICIENCY (%)
--20
IMD, INTERMODULATION DISTORTION (dBc)
IMD, INTERMODULATION DISTORTION (dBc)
--10
10
0
60
50
Pout, OUTPUT POWER (WATTS)
20
VDD = 28 Vdc, IDQ = 800 mA, f = 2140 MHz, Single--Carrier
W--CDMA, Input Signal PAR = 7.5 dB
ACPR @ ±5 MHz Offset in 3.84 MHz
Integrated Bandwidth
--30
--40
19
Uncorrected
Upper and Lower
--50
70
--30_C
DPD Corrected
No Memory Correction
--60
Gps
18
25_C
17
85_C
--70
38
39
40
41
42
43
44
25_C
85_C
46
47
48
49
Pout, OUTPUT POWER (dBm)
Figure 10. Digital Predistortion Correction versus
ACPR and Output Power
50
30
15
20
VDD = 28 Vdc
IDQ = 800 mA
f = 2140 MHz
ηD
13
45
60
40
16
14
DPD Corrected, with Memory Correction
TC = --30_C
1
10
ηD, DRAIN EFFICIENCY (%)
--20
Gps, POWER GAIN (dB)
ACPR, UPPER AND LOWER RESULTS (dBc)
Figure 9. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
10
100
0
200
Pout, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
MRF7S21080HR3 MRF7S21080HSR3
RF Device Data
Freescale Semiconductor
7
TYPICAL CHARACTERISTICS
19
Gps, POWER GAIN (dB)
IDQ = 800 mA
f = 2140 MHz
18
17
16
VDD = 24 V
32 V
28 V
15
0
40
80
120
160
Pout, OUTPUT POWER (WATTS) CW
Figure 12. Power Gain versus Output Power
W--CDMA TEST SIGNAL
100
10
0
--10
Input Signal
--30
0.1
0.01
W--CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
0.001
0.0001
3.84 MHz
Channel BW
--20
1
(dB)
PROBABILITY (%)
10
0
1
2
3
4
5
6
--40
--50
--60
+ACPR in 3.84 MHz
Integrated BW
--ACPR in 3.84 MHz
Integrated BW
--70
--80
7
8
9
PEAK--TO--AVERAGE (dB)
Figure 13. CCDF W--CDMA IQ Magnitude
Clipping, Single--Carrier Test Signal
10
--90
--100
--9
--7.2 --5.4
--3.6 --1.8
0
1.8
3.6
5.4
7.2
9
f, FREQUENCY (MHz)
Figure 14. Single--Carrier W--CDMA Spectrum
MRF7S21080HR3 MRF7S21080HSR3
8
RF Device Data
Freescale Semiconductor
f = 2040 MHz
Zo = 25 Ω
Zload
f = 2220 MHz
f = 2220 MHz
f = 2060 MHz
Zsource
f = 2060 MHz
VDD = 28 Vdc, IDQ = 800 mA, Pout = 22 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
2060
7.16 -- j11.074
4.403 -- j6.809
2080
7.066 -- j10.796
4.275 -- j6.662
2100
6.954 -- j10.526
4.147 -- j6.515
2120
6.857 -- j10.260
4.017 -- j6.375
2140
6.745 -- j9.980
3.889 -- j6.233
2160
6.668 -- j9.728
3.764 -- j6.126
2180
6.588 -- j9.462
3.642 -- j6.016
2200
6.511 -- j9.203
3.519 -- j5.895
2220
6.403 -- j8.892
3.401 -- j5.774
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 15. Series Equivalent Source and Load Impedance
MRF7S21080HR3 MRF7S21080HSR3
RF Device Data
Freescale Semiconductor
9
PACKAGE DIMENSIONS
MRF7S21080HR3 MRF7S21080HSR3
10
RF Device Data
Freescale Semiconductor
MRF7S21080HR3 MRF7S21080HSR3
RF Device Data
Freescale Semiconductor
11
MRF7S21080HR3 MRF7S21080HSR3
12
RF Device Data
Freescale Semiconductor
MRF7S21080HR3 MRF7S21080HSR3
RF Device Data
Freescale Semiconductor
13
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents and software to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
• RF High Power Model
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Nov. 2007
• Initial Release of Data Sheet
1
Mar. 2011
• Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification
number, PCN13628, p. 1, 2
• Fig. 13, MTTF versus Junction Temperature removed, p. 8. Refer to the device’s MTTF Calculator
available at freescale.com/RFpower. Go to Design Resources > Software and Tools.
• Fig. 14, CCDF W--CDMA IQ Magnitude Clipping, Single--Carrier Test Signal and Fig. 15, Single--Carrier
W--CDMA Spectrum updated to show the undistorted input test signal, p. 8 (renumbered as Figs. 13 and 14
respectively after Fig. 13 removed)
• Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software,
p. 14
MRF7S21080HR3 MRF7S21080HSR3
14
RF Device Data
Freescale Semiconductor
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MRF7S21080HR3 MRF7S21080HSR3
Document
Number:
RF
Device
Data MRF7S21080H
Rev. 1, 3/2011
Freescale
Semiconductor
15