ENA2152 D

Ordering number : ENA2152A
EFC6602R
N-Channel Power MOSFET
http://onsemi.com
12V, 18A, 5.9mΩ, Dual EFCP
Features
•
•
•
2.5V drive
Common-drain type
2KV ESD HBM
•
•
Protection diode in
Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Source-to-Source Voltage
Conditions
Ratings
VSSS
VGSS
Gate-to-Source Voltage
Source Current (DC)
IS
ISP
Source Current (Pulse)
Total Dissipation
Channel Temperature
PT
Tch
Storage Temperature
Tstg
Unit
12
V
±12
V
18
A
PW≤10μs, duty cycle≤1%
60
A
When mounted on ceramic substrate (5000mm2×0.8mm)
2.0
W
150
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Product & Package Information
unit : mm (typ)
7073-001
• Package
: EFCP
• JEITA, JEDEC
:• Minimum Packing Quantity : 5,000 pcs./reel
EFC6602R-TR
2.7
6
5
Taping Type : TR
4
Marking
1.81
MB
LOT No.
TR
2
3
Electrical Connection
0.2
1
4, 6
0.65
0.65
1 : Source1
2 : Gate1
3 : Source1
4 : Source2
5 : Gate2
6 : Source2
0.3
Rg
5
EFCP2718-6CE-020
Rg
2
Rg=200Ω
Semiconductor Components Industries, LLC, 2013
July, 2013
1, 3
13013 TKIM TC-00002866/N2112 TKIM TC-00002838/HD 121009 PF No. A2152-1/8
EFC6602R
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Ratings
Conditions
Unit
max
12
V
Source-to-Source Breakdown Voltage
V(BR)SSS
ISSS
Gate-to-Source Leakage Current
IGSS
VGS(off)
VGS=±8V, VSS=0V
VSS=6V, IS=1mA
Test Circuit 2
Cutoff Voltage
Forward Transfer Admittance
| yfs |
VSS=6V, IS=3A
Test Circuit 4
RSS(on)1
RSS(on)2
Test Circuit 5
3.1
4.5
5.9
Test Circuit 5
3.3
4.8
6.3
mΩ
RSS(on)3
IS=3A, VGS=4.5V
IS=3A, VGS=4.0V
IS=3A, VGS=3.8V
Test Circuit 5
3.5
5
6.5
mΩ
RSS(on)4
IS=3A, VGS=3.1V
Test Circuit 5
4.0
5.8
8.2
mΩ
RSS(on)5
IS=3A, VGS=2.5V
Test Circuit 5
5.2
7.5
11
mΩ
Turn-ON Delay Time
Test Circuit 1
typ
Zero-Gate Voltage Source Current
Static Source-to-Source On-State Resistance
IS=1mA, VGS=0V
VSS=10V, VGS=0V
min
Test Circuit 1
Test Circuit 3
0.5
±1
μA
13
Rise Time
Turn-OFF Delay Time
td(off)
Fall Time
tf
Total Gate Charge
Qg
VDD=6V, VGS=4.5V, IS=18A
Test Circuit 8
55
Forward Source-to-Source Voltage
VF(S-S)
IS=3A, VGS=0V
Test Circuit 6
0.76
Test Circuit 7
μA
1.3
td(on)
tr
VDD=6V, VGS=4.5V, IS=3A
1
V
S
mΩ
530
ns
2100
ns
6200
ns
5500
ns
nC
1.2
V
Ordering Information
Device
EFC6602R-TR
Package
Shipping
memo
EFCP
5,000pcs./reel
Pb Free and Halogen Free
No. A2152-2/8
EFC6602R
Test circuits are example of measuring FET1 side
Test Circuit 2
IGSS
Test Circuit 1
ISSS
S2
S2
G2
G2
A
VSS
G1
G1
A
VGS
S1
When FET1 is measured,
Gate and Source of FET2
are short-circuited.
S1
Test Circuit 3
VGS(off)
Test Circuit 4
| yfs |
S2
S2
G2
G2
A
A
When FET1 is measured,
Gate and Source of FET2
are short-circuited.
VSS
G1
VGS
VSS
G1
VGS
S1
Test Circuit 6
VF(S-S)
Test Circuit 5
RSS(on)
S2
S2
4.5V
IS
IF
G2
G2
V
V
G1
VGS
VGS=0V
G1
S1
S1
When FET1 is
measured,+4.5V is added to
VGS of FET2.
Test Circuit 8
Qg
Test Circuit 7
td(on), tr, td(off), tf
S2
S2
RL
A
G2
G2
When FET1 is measured,
Gate and Source of FET2
are short-circuited.
V
IG =1mA
G1
R
R
S1
PG
When FET1 is measured,
Gate and Source of FET2
are short-circuited.
S1
VDD
PG
50Ω
G1
RL
S1
VDD When FET1 is measured,
Gate and Source of FET2
are short-circuited.
No. A2152-3/8
EFC6602R
VSS=6V
18
14
12
10
8
6
25°C
4
--25°C
Ta=75°
C
2
0
0.5
1.0
1.5
Switching Time, S/W Time -- ns
0.4
0.6
0.8
1.0
Forward Source to Source Voltage, VF(S-S) -- V
Qg -- VGS
4.5
2.0
1.5
1.0
0.5
10
20
30
40
50
Total Gate Charge, Qg -- nC
tr
2
1K
7
td(on)
5
3
2
VSS=6V
VGS=4.5V
,V
A
=3
ID
=4
V GS
4
.0V
0
--60
--40 --20
0
=4
V GS
2
3
5 7 1.0
2
3
5 7 10
2
3
IT16989
Ta=25°C
IS=3A
45
40
35
30
25
20
15
10
5
0
2
4
6
8
10
IT16991
ID -- VSS
4.5V
4.0V
.1V
.5V
,
,
5 7 0.1
RSS(on) -- VGS
5.0
=3
GS
A
=3
ID
3A
I D=
3
4.5
4.0
3.1V
7V
=3.
V GS
V
2
3.5
2.5V
A,
=3
ID
tf
Gate to Source Voltage, VGS -- V
Drain Current, ID -- A
Static Source to Source
On State Resistance, RSS(on) -- mΩ
10
5 7 10
IT16987
3
0
60
.5V
=2
GS
2 3
5
5.5
2
5 7 1.0
td (off)
6.0
12
6
2 3
S/W Time -- IS
IT16990
RSS(on) -- Ta
14
,
3A
I D=
5 7 0.1
Source Current, IS -- A
Static Source to Source
On State Resistance, RSS(on) -- mΩ
Gate to Source Voltage, VGS -- V
2.5
8
5 7 0.01 2 3
50
3.0
0
3
2
IT16988
3.5
0
0.1
7
5
100
0.01
1.2
VSS=6V
IS=18A
4.0
°C
25
V
25°C
--25°C
3
2
Ta=
75°C
Source Current, IS -- A
1.0
7
5
0
3
2
7
3
2
0.01
1.0
7
5
10K
10
7
5
3
2
C
5°
--2
=
°C
Ta
75
Source Current, IS -- A
VGS=0V
0.1
7
5
3
2
IT16986
IS -- VF(S-S)
3
2
10
7
5
0.01
0.001 2 3
2.0
Gate to Source Voltage, VGS -- V
VSS=6V
1.5
0
| yfs | -- IS
3
2
10.0V
Source Current, IS -- A
16
Forward Transfer Admittance, | yfs | -- S
IS -- VGS
20
3.0
2.5
2.0
1.3V
V GS=
1.5
1.0
0.5
20
40
60
80
100
Ambient Temperature, Ta -- °C
120
140
160
IT16992
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
Source to Source Voltage, VDS -- V
0.9
1.0
IT16993
No. A2152-4/8
EFC6602R
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
ASO
10
0μ
1m s
s
ISP=60A(PW≤10μs)
IS=18A
10
DC
Operation in this area
is limited by RDS(on).
ms
10
0m
op
s
era
tio
n
Ta=25°C
Single pulse
When mounted on ceramic substrate (5000mm2×0.8mm)
0.01
0.01
2
3
5 7 0.1
2
3
5 7 1.0
PT -- Ta
2.5
Total Dissipation, PT -- W
Source Current, IS -- A
100
7
5
3
2
2
3
5 7 10
Source Voltage to Source Voltage, VSS -- V
2
3
IT16994
When mounted on ceramic substrate
(5000mm2×0.8mm)
2.0
1.5
1.0
0.5
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
IT16995
No. A2152-5/8
EFC6602R
Taping Specification
EFC6602R-TR
No. A2152-6/8
EFC6602R
Outline Drawing
EFC6602R-TR
Land Pattern Example
Mass (g) Unit
0.0024 mm
* For reference
Unit: mm
No. A2152-7/8
EFC6602R
Note on usage : Since the EFC6602R is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at
www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no
warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the
application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual
performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical
experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use
as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in
which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for
any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors
harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or
death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the
part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PS No. A2152-8/8
Similar pages