EFC8811R D

EFC8811R
Power MOSFET
for 1-Cell Lithium-ion Battery Protection
12V, 3.2mΩ, 27A, Dual N-Channel
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This Power MOSFET features a low on-state resistance. This device is
suitable for applications such as power switches of portable machines. Best
suited for 1-cell lithium-ion battery applications.
VSSS
Features
 2.5V drive
 2kV ESD HBM
 Common-Drain Type
 ESD Diode-Protected Gate
 Pb-Free, Halogen Free and RoHS compliance
ELECTRICAL CONNECTION
N-Channel
4, 6
Rg
5
Value
12
8
27
Unit
V
V
A
THERMAL RESISTANCE RATINGS
Junction to Ambient
Surface mounted on ceramic substrate
2
(5000mm  0.8mm)
Symbol
27A
6.3mΩ@ 2.5V
Source Current (DC)
Source Current (Pulse)
A
ISP
100
PW100s, duty cycle1%
Total Dissipation
PT
Surface mounted on ceramic substrate
2.5
W
2
(5000mm  0.8mm)
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
55 to +150
C
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
Parameter
3.2mΩ@ 3.8V
4.4mΩ@ 3.1V
SPECIFICATIONS
ABSOLUTE MAXIMUM RATINGS at Ta = 25C (Note 1)
Symbol
VSSS
VGSS
IS
IS Max
3.2mΩ@ 4.0V
12V
Applications
 1-Cell Lithium-ion Battery Charging and Discharging Switch
Parameter
Source to Source Voltage
Gate to Source Voltage
RSS(on) Max
3.2mΩ@ 4.5V
Value
RJA
Unit
50
C/W
Rg
2
Rg=200Ω
1, 3
1 : Source1
2 : Gate1
3 : Source1
4 : Source2
5 : Gate2
6 : Source2
CSP6, 1.77x3.54 /
EFCP3517-6DGH-020
MARKING
ML
LOT No.
ORDERING INFORMATION
See detailed ordering and shipping
information on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
March 2016 - Rev. 0
1
Publication Order Number :
EFC8811R/D
EFC8811R
ELECTRICAL CHARACTERISTICS at Ta  25C (Note 2)
Parameter
Source to Source Breakdown Voltage
Zero-Gate Voltage Source Current
Gate to Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Static Source to Source On-State
Resistance
Symbol
Value
Conditions
min
typ
max
V(BR)SSS
ISSS
IS=1mA, VGS=0V
Test Circuit 1
VSS=10V, VGS=0V
Test Circuit 1
IGSS
VGS(th)
gFS
VGS=8V, VSS=0V
VSS=6V, IS=1mA
Test Circuit 3
VSS=6V, IS=3A
Test Circuit 4
RSS(on)1
RSS(on)2
RSS(on)3
IS=5A, VGS=4.5V
IS=5A, VGS=4.0V
Test Circuit 5
Test Circuit 5
1.8
2.3
3.2
m
1.9
2.4
3.2
m
IS=5A, VGS=3.8V
Test Circuit 5
2.0
2.6
3.2
m
RSS(on)4
RSS(on)5
IS=5A, VGS=3.1V
Test Circuit 5
2.1
3.3
4.4
m
IS=5A, VGS=2.5V
Test Circuit 5
2.7
4.0
6.3
m
Turn-ON Delay Time
td(on)
Rise Time
tr
Turn-OFF Delay Time
td(off)
Fall Time
tf
Total Gate Charge
Qg
12
Unit
V
Test Circuit 2
0.5
VSS=6V, VGS=4.5V, IS=27A Test Circuit 7
A
1
A
1.3
19
80
VSS=6V, VGS=4.5V, IS=3A Test Circuit 6
1
V
S
ns
570
ns
38,000
ns
17,700
ns
100
nC
Forward Source to Source Voltage
IS=3A, VGS=0V
Test Circuit 8
0.75
1.2
V
VF(S-S)
Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.
Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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EFC8811R
Test circuits are example of measuring FET1 side
Test Circuit 2
IGSS
Test Circuit 1
VSSS / ISSS
S2
S2
G2
G2
A
G1
VSS
G1
A
VGS
S1
S1
Test Circuit 3
VGS(th)
When FET1 is measured,
Gate and Source of FET2
are short-circuited.
Test Circuit 4
gFS
S2
S2
G2
G2
A
A
When FET1 is measured,
Gate and Source of FET2
are short-circuited.
G1
VGS
G1
VSS
VGS
S1
VSS
S1
Test Circuit 6
td(on), tr, td(off), tf
Test Circuit 5
RSS(on)
S2
S2
IS
RL
G2
G2
V
V
G1
G1
VGS
When FET1 is measured,
Gate and Source of FET2
are short-circuited.
VSS
S1
S1
When FET1 is measured,
Gate and Source of FET2
are short-circuited.
PG
Test Circuit 8
VF(S-S)
Test Circuit 7
Qg
S2
S2
IS
A
When FET1 is measured,
Gate and Source of FET2
are short-circuited.
G2
G2
V
IG =1mA
G1
RL
VGS=0V
S1
S1
PG
G1
VSS
When FET2 is measured, the position of FET1 and FET2 is switched.
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3
When FET1 is
measured,+4.5V is added to
VGS of FET2.
EFC8811R
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EFC8811R
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5
EFC8811R
PACKAGE DIMENSIONS
unit : mm
CSP6, 1.77x3.54 / EFCP3517-6DGH-020
CASE 568AL
ISSUE O
E
A B
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
DIM
A
b
b1
D
E
e
e2
L
D
PIN A1
REFERENCE
0.05 C
2X
0.05 C
2X
TOP VIEW
A
0.03 C
RECOMMENDED
SOLDERING FOOTPRINT*
0.03 C
C
SIDE VIEW
e2
2X
b
1
e2
2
SEATING
PLANE
2X
8X
R0.125
4X
PACKAGE
OUTLINE
0.50
PITCH
e
0.03 C
1
2.00
PITCH
b1
5
6
DIMENSIONS: MILLIMETERS
4
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
L
1 : Source1
BOTTOM VIEW
2 : Gate1
1.25
0.25
e/2
3
0.05 C A B
4X
MILLIMETERS
MIN
MAX
0.22
0.22
0.28
0.22
0.28
1.77 BSC
3.54 BSC
0.50 BSC
1.00 BSC
1.22
1.28
3 : Source1
4 : Source2
5 : Gate2
6 : Source2
ORDERING INFORMATION
Device
EFC8811R-TF
Marking
ML
Package
CSP6, 1.77x3.54 /
EFCP3517-6DGH-020
(Pb-Free / Halogen Free)
Shipping (Qty / Packing)
5,000 / Tape & Reel
† For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF
Note on usage : Since the EFC8811R is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects. Please contact sales for use except the designated application.
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States
and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of
SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf . SCILLC reserves the right to make changes without
further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose,
nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including
without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can
and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are
not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers,
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directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was
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