SCH1331 D

SCH1331
Power MOSFET
–12V, 84mΩ, –3A, Single P-Channel
This Low-profile High-power MOSFET is produced using ON
Semiconductor’s trench technology, which is specifically designed to
minimize gate charge and ultra low on resistance. This device is suitable for
applications with low gate charge driving or ultra low on resistance
requirements.
Features
 Low On-Resistance
 High speed switching
 1.8V drive
 Low capacitance
 Pb-Free, Halogen Free and RoHS compliance
 Ultra small package SCH6 (1.6mm×1.6mm×0.56mmt)
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VDSS
RDS(on) Max
84mΩ@ 4.5V
ID Max
12V
126mΩ@ 2.5V
3A
230mΩ@ 1.8V
ELECTRICAL CONNECTION
P-Channel
Typical Applications
 Battery Switch
 Load Switch
 DC/DC Converter
 Lens Motor Driver
1, 2, 5, 6
SPECIFICATIONS
ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1)
Parameter
Symbol
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
3
Value
Unit
12
V
VGSS
10
V
Drain Current (DC)
ID
3
A
Drain Current (Pulse)
PW  10s, duty cycle  1%
IDP
12
A
Power Dissipation
When mounted on ceramic substrate
2
(900mm  0.8mm)
PD
1
W
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
55 to +150
C
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
2 : This product is designed to “ESD immunity < 200V*”, so please take care
when handling. *Machine Model
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PACKING TYPE : TL
MARKING
YG
LOTNo.
VDSS
Gate to Source Voltage
LOTNo.
Drain to Source Voltage
TL
ORDERING INFORMATION
See detailed ordering and shipping
information on page 5 of this data sheet.
THERMAL RESISTANCE RATINGS
Parameter
Junction to Ambient
When mounted on ceramic substrate
2
(900mm  0.8mm)
Symbol
RJA
© Semiconductor Components Industries, LLC, 2015
June 2015 - Rev. 2
Value
Unit
125
1
C/W
Publication Order Number :
SCH1331/D
SCH1331
ELECTRICAL CHARACTERISTICS at Ta  25C (Note 3)
Parameter
Symbol
Drain to Source Breakdown Voltage
V(BR)DSS
Zero-Gate Voltage Drain Current
IDSS
Gate to Source Leakage Current
IGSS
VGS(th)
gFS
Gate Threshold Voltage
Forward Transconductance
Static Drain to Source On-State
Resistance
RDS(on)1
RDS(on)2
RDS(on)3
Input Capacitance
Ciss
Conditions
Value
min
ID=1mA, VGS=0V
VDS=12V, VGS=0V
VGS=8V, VDS=0V
12
VDS=6V, ID=1mA
0.4
VDS=6V, ID=1.5A
2.7
typ
max
Unit
V
10
A
10
A
1.3
V
4.5
S
ID=1.5A, VGS=4.5V
ID=0.8A, VGS=2.5V
64
84
m
90
126
m
ID=0.3A, VGS=1.8V
135
230
m
405
pF
Output Capacitance
Coss
145
pF
Reverse Transfer Capacitance
Crss
100
pF
Turn-ON Delay Time
td(on)
8.8
ns
Rise Time
tr
80
ns
Turn-OFF Delay Time
td(off)
41
ns
Fall Time
tf
50
ns
5.6
nC
Total Gate Charge
Qg
Gate to Source Charge
Qgs
Gate to Drain “Miller” Charge
Qgd
VDS=6V, f=1MHz
See specified Test Circuit
VDS=6V, VGS=4.5V, ID=2.5A
0.7
nC
1.6
nC
VSD
Forward Diode Voltage
IS=2.5A, VGS=0V
0.82
1.2
V
Note 3 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.
Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Switching Time Test Circuit
0V
--4.5V
VDD= --6V
VIN
ID= --1.5A
RL=4
VIN
D
VOUT
PW=10s
D.C.≤1%
G
SCH1331
P.G
50
S
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2
SCH1331
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3
SCH1331
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SCH1331
PACKAGE DIMENSIONS
unit : mm
SOT-563 / SCH6
CASE 463AB
ISSUE O
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
Recommended
Soldering Footprint
1.4
0.4
0.3
0.5 0.5
ORDERING INFORMATION
Device
Marking
Package
Shipping (Qty / Packing)
YG
SOT-563 / SCH6
(Pb-Free / Halogen Free)
5,000 / Tape & Reel
SCH1331-TL-H
SCH1331-TL-W
† For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF
Note on usage : Since the SCH1331 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States
and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of
SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf . SCILLC reserves the right to make changes without
further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose,
nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including
without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can
and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
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not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was
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