Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25N Rev. 2, 4/2015 RF Power LDMOS Transistors MRFE6VP61K25N MRFE6VP61K25GN High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial, medical, broadcast, aerospace and mobile radio applications. Their unmatched input and output design allows for wide frequency range use from 1.8 to 600 MHz. Typical Performance: VDD = 50 Vdc Frequency (MHz) Signal Type Pout (W) Gps (dB) D (%) 87.5–108 (1,2) CW 1309 CW 24.1 77.6 230 (3) Pulse (100 sec, 20% Duty Cycle) 1250 Peak 23.0 72.3 1.8–600 MHz, 1250 W CW, 50 V WIDEBAND RF POWER LDMOS TRANSISTORS OM--1230--4L PLASTIC MRE6VP61K25N Load Mismatch/Ruggedness Frequency (MHz) 230 (3) Signal Type VSWR Pulse (100 sec, 20% Duty Cycle) > 65:1 at all Phase Angles Pin (W) Test Voltage 11.5 Peak (3 dB Overdrive) 50 Result No Device Degradation OM--1230G--4L PLASTIC MRE6VP61K25GN 1. Measured in 87.5–108 MHz broadband reference circuit. 2. The values shown are the center band performance numbers across the indicated frequency range. 3. Measured in 230 MHz narrowband test circuit. Features Unmatched Input and Output Allowing Wide Frequency Range Utilization Device can be used Single--Ended or in a Push--Pull Configuration Gate A 3 1 Drain A Qualified up to a Maximum of 50 VDD Operation Characterized from 30 to 50 V for Extended Power Range Suitable for Linear Application with Appropriate Biasing Integrated ESD Protection with Greater Negative Gate--Source Voltage Range for Improved Class C Operation Characterized with Series Equivalent Large--Signal Impedance Parameters Gate B 4 2 Drain B Recommended drivers: AFT05MS004N (4 W) or MRFE6VS25N (25 W) Typical Applications Broadcast – FM broadcast – HF and VHF broadcast Industrial, Scientific, Medical (ISM) – CO2 laser generation – Plasma etching – Particle accelerators (synchrotrons) – MRI – Industrial heating/welding Freescale Semiconductor, Inc., 2015. All rights reserved. RF Device Data Freescale Semiconductor, Inc. (Top View) Note: Exposed backside of the package is the source terminal for the transistors. Figure 1. Pin Connections Aerospace – VHF omnidirectional range (VOR) – Weather radar Mobile Radio – HF and VHF communications – PMR base stations MRFE6VP61K25N MRFE6VP61K25GN 1 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS –0.5, +133 Vdc Gate--Source Voltage VGS –6.0, +10 Vdc Storage Temperature Range Tstg – 65 to +150 C Case Operating Temperature Range TC –40 to +150 C Operating Junction Temperature Range (1,2) TJ –40 to +225 C PD 3333 16.67 W W/C Symbol Value (2,3) Unit Thermal Resistance, Junction to Case CW: Case Temperature 109C, 1250 W CW, 50 Vdc, IDQ(A+B) = 245 mA, 98 MHz RJC 0.06 C/W Thermal Impedance, Junction to Case Pulse: Case Temperature 74C, 1250 W Peak, 100 sec Pulse Width, 20% Duty Cycle, IDQ(A+B) = 100 mA, 230 MHz ZJC 0.016 C/W Total Device Dissipation @ TC = 25C Derate above 25C Table 2. Thermal Characteristics Characteristic Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 2, passes 2500 V Machine Model (per EIA/JESD22--A115) B, passes 250 V Charge Device Model (per JESD22--C101) IV, passes 2000 V Table 4. Moisture Sensitivity Level Test Methodology Per JESD22--A113, IPC/JEDEC J--STD--020 Rating Package Peak Temperature Unit 3 260 C Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) Characteristic Off Characteristics Symbol Min Typ Max Unit IGSS — — 1 Adc 133 — — Vdc (4) Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) Drain--Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 mAdc) V(BR)DSS Zero Gate Voltage Drain Leakage Current (VDS = 50 Vdc, VGS = 0 Vdc) IDSS — — 10 Adc Zero Gate Voltage Drain Leakage Current (VDS = 100 Vdc, VGS = 0 Vdc) IDSS — — 20 Adc Gate Threshold Voltage (4) (VDS = 10 Vdc, ID = 1776 Adc) VGS(th) 1.7 2.2 2.7 Vdc Gate Quiescent Voltage (VDD = 50 Vdc, ID(A+B) = 100 mAdc, Measured in Functional Test) VGS(Q) 1.9 2.4 2.9 Vdc Drain--Source On--Voltage (4) (VGS = 10 Vdc, ID = 2 Adc) VDS(on) — 0.2 — Vdc Forward Transconductance (4) (VDS = 10 Vdc, ID = 30 Adc) gfs — 28.0 — S On Characteristics 1. 2. 3. 4. Continuous use at maximum temperature will affect MTTF. MTTF calculator available at http://www.freescale.com/rf/calculators. Refer to AN1955 – Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf and search AN1955. Each side of device measured separately. (continued) MRFE6VP61K25N MRFE6VP61K25GN 2 RF Device Data Freescale Semiconductor, Inc. Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Reverse Transfer Capacitance (1) (VDS = 50 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 2.8 — pF Output Capacitance (1) (VDS = 50 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 185 — pF Input Capacitance (1) (VDS = 50 Vdc, VGS = 0 Vdc 30 mV(rms)ac @ 1 MHz) Ciss — 562 — pF Dynamic Characteristics Functional Tests (2,3) (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ(A+B) = 100 mA, Pout = 1250 W Peak (250 W Avg.), f = 230 MHz, 100 sec Pulse Width, 20% Duty Cycle Power Gain Gps 22.0 23.0 24.5 dB Drain Efficiency D 68.5 72.3 — % Input Return Loss IRL — –13 –9 dB Table 6. Load Mismatch/Ruggedness (In Freescale Test Fixture, 50 ohm system) IDQ(A+B) = 100 mA Frequency (MHz) 230 Signal Type VSWR Pin (W) Pulse (100 sec, 20% Duty Cycle) > 65:1 at all Phase Angles 11.5 Peak (3 dB Overdrive) Test Voltage, VDD Result 50 No Device Degradation Table 7. Ordering Information Device MRFE6VP61K25NR6 MRFE6VP61K25GNR6 Tape and Reel Information R6 Suffix = 150 Units, 56 mm Tape Width, 13--Reel Package OM--1230--4L OM--1230G--4L 1. Each side of device measured separately. 2. Devices tested without thermal grease. 3. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull wing (GN) parts. MRFE6VP61K25N MRFE6VP61K25GN RF Device Data Freescale Semiconductor, Inc. 3 TYPICAL CHARACTERISTICS Measured with 30 mV(rms)ac @ 1 MHz VGS = 0 Vdc 1000 Ciss NORMALIZED VGS(Q) C, CAPACITANCE (pF) 10000 Coss 100 10 Crss 1 0 10 20 30 40 50 VDS, DRAIN--SOURCE VOLTAGE (VOLTS) Note: Each side of device measured separately. Figure 2. Capacitance versus Drain--Source Voltage 1.06 1.05 1.04 1.03 1.02 1.01 1 0.99 IDQ(A+B) = 100 mA VDD = 50 Vdc 500 mA 1500 mA 2000 mA 0.98 0.97 0.96 0.95 0.94 –50 –25 0 25 50 75 100 TC, CASE TEMPERATURE (C) IDQ (mA) Slope (mV/C) 100 –2.70 500 –2.42 1500 –2.22 2000 –2.05 Figure 3. Normalized VGS versus Quiescent Current and Case Temperature MRFE6VP61K25N MRFE6VP61K25GN 4 RF Device Data Freescale Semiconductor, Inc. 230 MHz NARROWBAND PRODUCTION TEST FIXTURE C10 C22 C13 C11 C12 C23 C24 C21 COAX1 COAX3 R1 L3 C16 L1 C3 L2 C5 C14 C29 C18 C20 C19 L4 R2 COAX2 C17 C15 CUT OUT AREA C1 C2 C4 COAX4 C25 C6 C9 C7 D63312 C26 MRFE6VP61K25N Rev. 0 C8 C27 C28 Figure 4. MRFE6VP61K25N Narrowband Test Circuit Component Layout — 230 MHz Table 8. MRFE6VP61K25N Narrowband Test Circuit Component Designations and Values — 230 MHz Part Description Part Number Manufacturer C1 20 pF Chip Capacitor ATC100B200JT500XT ATC C2, C3, C5 27 pF Chip Capacitors ATC100B270JT500XT ATC C4 0.8–8.0 pF Variable Capacitor, Gigatrim 27291SL Johanson C6, C10 22 F, 35 V Tantalum Capacitors T491X226K035AT Kemet C7, C11 0.1 F Chip Capacitors CDR33BX104AKWS AVX C8, C12 220 nF Chip Capacitors C1812C224K5RAC-TU Kemet C9, C13, C21, C25 1000 pF Chip Capacitors ATC100B102JT50XT ATC C14 39 pF Chip Capacitor ATC100B390JT500XT ATC C15 39 pF Chip Capacitor ATC100C390JT250XT ATC C16, C17, C18, C19 240 pF Chip Capacitors ATC100B241JT200XT ATC C20 9.1 pF Chip Capacitor ATC100B9R1BT500XT ATC C22, C23, C24, C26, C27, C28 470 F, 63 V Electrolytic Capacitors MCGPR63V477M13X26-RH Multicomp C29 47 pF Chip Capacitor ATC100C470JT250XT ATC Coax1, 2, 3, 4 25 Semi Rigid Coax, 2.2 Shield Length UT-141C-25 Micro--Coax L1, L2 5 nH Inductors A02TKLC Coilcraft L3, L4 6.6 nH Inductors GA3093-ALC Coilcraft R1, R2 10 , 1/4 W Chip Resistors CRCW120610R0JNEA Vishay PCB Arlon AD255A 0.030, r = 2.55 D63312 MTL MRFE6VP61K25N MRFE6VP61K25GN RF Device Data Freescale Semiconductor, Inc. 5 MRFE6VP61K25N MRFE6VP61K25GN 6 RF Device Data Freescale Semiconductor, Inc. RF INPUT Z1 C1 Z2 COAX2 COAX1 C3 C2 Z6 Z5 C6 + C4 C10 + Z8 Z7 C7 Z9 C12 C8 C5 Z10 C11 C9 Z12 L2 L1 Z11 C13 R2 Z14 Z13 R1 DUT Z16 Z15 L4 Z20 Z18 Z22 C14 Z21 Z17 Z19 L3 Z24 Z23 Z25 C25 Z26 C29 C21 C26 + Z28 C15 Z27 C22 C27 + C23 + 0.170 0.100 Microstrip 0.116 0.285 Microstrip 0.116 0.285 Microstrip 0.108 0.285 Microstrip 0.872 0.058 Microstrip 0.412 0.726 Microstrip 0.416 0.507 Microstrip Z3, Z4 Z5, Z6 Z7, Z8 Z9, Z10 Z11*, Z12* Z13, Z14 Z15, Z16 * Line lengths include microstrip bends 0.175 0.082 Microstrip Z2 Description 0.192 0.082 Microstrip Z1 Microstrip 0.179 0.082 Microstrip 0.125 0.300 Microstrip Z27, Z28 Z32 0.247 0.300 Microstrip Z25, Z26 0.116 0.300 Microstrip 1.006 0.300 Microstrip Z23, Z24 0.186 0.082 Microstrip 0.059 0.507 Microstrip Z21, Z22 Z31 0.187 0.154 Microstrip Z19*, Z20* Z29, Z30 Description 0.466 0.363 Microstrip Microstrip Z17*, Z18* Table 9. MRFE6VP61K25N Narrowband Test Circuit Microstrips — 230 MHz Figure 5. MRFE6VP61K25N Narrowband Test Circuit Schematic — 230 MHz VGG Z4 Z3 VGG + C28 + C19 C18 C17 C16 C24 + VDD Z30 Z29 VDD COAX4 COAX3 Z31 C20 RF Z32 OUTPUT TYPICAL CHARACTERISTICS — 230 MHz Pout, OUTPUT POWER (WATTS) PEAK 1600 VDD = 50 Vdc, f = 230 MHz Pulse Width = 100 sec, 20% Duty Cycle 1400 1200 1000 Pin = 6 W 800 Pin = 3 W 600 400 200 0 0.5 0 1.5 1 2 2.5 3 3.5 VGS, GATE--SOURCE VOLTAGE (VOLTS) Figure 6. Output Power versus Gate--Source Voltage at a Constant Input Power 26 60 25 56 52 48 28 30 32 34 36 38 50 D 20 100 mA 40 Gps 100 mA 18 50 42 40 60 300 mA 19 44 26 70 600 mA 23 21 80 IDQ(A+B) = 900 mA 24 22 90 VDD = 50 Vdc, IDQ(A+B) = 100 mA, f = 230 MHz Pulse Width = 100 sec, 20% Duty Cycle 600 mA 300 mA 900 mA 20 10 100 Pin, INPUT POWER (dBm) 30 D, DRAIN EFFICIENCY (%) 27 VDD = 50 Vdc, IDQ(A+B) = 100 mA, f = 230 MHz Pulse Width = 100 sec, 20% Duty Cycle Gps, POWER GAIN (dB) Pout, OUTPUT POWER (dBm) PEAK 64 1000 0 2000 Pout, OUTPUT POWER (WATTS) PEAK f (MHz) P1dB (W) P3dB (W) 230 1295 1518 Figure 8. Power Gain and Drain Efficiency versus Output Power and Quiescent Current Figure 7. Output Power versus Input Power 26 25_C 70 23 60 Gps 22 25_C 20 19 18 40 D 85_C 100 85_C –40_C 50 40 30 VDD = 50 Vdc, IDQ(A+B) = 100 mA, f = 230 MHz 20 Pulse Width = 100 sec, 20% Duty Cycle 10 1000 2000 24 Gps, POWER GAIN (dB) TC = –40_C 24 21 25 80 D, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 25 26 90 23 22 21 45 V 20 40 V 19 35 V 18 VDD = 30 V 17 16 50 V 0 200 400 IDQ(A+B) = 100 mA, f = 230 MHz Pulse Width = 100 sec, 20% Duty Cycle 600 800 1000 1200 1400 Pout, OUTPUT POWER (WATTS) PEAK Pout, OUTPUT POWER (WATTS) PEAK Figure 9. Power Gain and Drain Efficiency versus Output Power Figure 10. Power Gain versus Output Power and Drain--Source Voltage 1600 MRFE6VP61K25N MRFE6VP61K25GN RF Device Data Freescale Semiconductor, Inc. 7 230 MHz NARROWBAND PRODUCTION TEST FIXTURE f MHz Zsource Zload 230 2.10 + j3.70 2.55 + j1.90 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload 50 Input Matching Network = Test circuit impedance as measured from drain to drain, balanced configuration. + -Zsource Device Under Test -- Output Matching Network 50 + Zload Figure 11. Narrowband Series Equivalent Source and Load Impedance — 230 MHz MRFE6VP61K25N MRFE6VP61K25GN 8 RF Device Data Freescale Semiconductor, Inc. 87.5–108 MHz BROADBAND REFERENCE CIRCUIT Table 10. 87.5–108 MHz Broadband Performance (In Freescale Reference Circuit, 50 ohm system) VDD = 50 Vdc, IDQ(A+B) = 250 mA, Pin = 5 W, CW Frequency (MHz) Gps (dB) D (%) Pout (W) 87.5 23.8 78.3 1212 98 24.1 77.6 1309 108 23.6 77.8 1161 MRFE6VP61K25N MRFE6VP61K25GN RF Device Data Freescale Semiconductor, Inc. 9 87.5–108 MHz BROADBAND REFERENCE CIRCUIT — 2.88 5.11 (73.1 mm 130 mm) C25 C28 C6 C26 C22 C7 C27 C21 C5 L4 L1 R2 C4 R1 C12 L3 Q1 C3 C24 C11 C1 C23* C15* C13 C2 L2 C20 C19 C18 C17 C16 R3 C14 C8 C9 MRFE6VP61K25N C10 D62499 *C15 and C23 are mounted vertically. 0.472 (12) 0.196 (5) 0.472 (12) 0.472 (12) 0.472 (12) Bend Here 0.196 (5) Side view 0.669 (17) 0.197 (5) 0.197 (5) Inches (mm) 45 degree L3 total wire length = 2.2 (56 mm) Figure 12. MRFE6VP61K25N 87.5–108 MHz Broadband Reference Circuit Component Layout Figure 13. MRFE6VP61K25N 87.5–108 MHz Broadband Reference Circuit Component Layout — Bottom MRFE6VP61K25N MRFE6VP61K25GN 10 RF Device Data Freescale Semiconductor, Inc. 87.5–108 MHz BROADBAND REFERENCE CIRCUIT Table 11. MRFE6VP61K25N 87.5–108 MHz Broadband Reference Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C3, C6, C9, C18, C19, C20, C21, C22 1000 pF Chip Capacitors ATC100B102JT50XT ATC C2 22 pF Chip Capacitor ATC100B220JT500XT ATC C4, C5, C8 10000 pF Chip Capacitors ATC200B103KT50XT ATC C7, C10, C15, C16, C17, C23 470 pF Chip Capacitors ATC100B471JT200XT ATC C11 100 pF, 300 V Mica MIN02-002EC101J-F CDE C12 15 pF, 300 V Mica MIN02-002CC150J-F CDE C13 6.2 pF Chip Capacitor ATC100B6R2BT500XT ATC C14 15 pF Chip Capacitor ATC100B150JT500XT ATC C24 12 pF Chip Capacitor ATC100B120JT500XT ATC C25, C26, C27 220 F, 63 V Electrolytic Capacitors EEU-FC1J221 Panasonic C28 22 F, 35 V Electrolytic Capacitor UUD1V220MCL1GS Nichicon L1, L2 17.5 nH Inductors, 6 Turns B06TJLC Coilcraft L3 1.5 mm Non--Tarnish Silver Plated Copper Wire, SP1500NT-001 Total Wire Length = 2.2/56 mm — L4 22 nH Inductor 1212VS-22NMEB Coilcraft Q1 RF Power LDMOS Transistor MRFE6VP61K25NR6 Freescale R1 10 , 1/4 W Chip Resistor CRCW120610R0JNEA Vishay R2, R3 33 , 2 W Chip Resistors 1-2176070-3 TE Connectivity PCB Arlon TC350 0.030, r = 3.5 D62499 MTL Note: Refer to MRFE6VP61K25N’s printed circuit boards and schematics to download the 87.5–108 MHz heatsink drawing. MRFE6VP61K25N MRFE6VP61K25GN RF Device Data Freescale Semiconductor, Inc. 11 28 79 27 78 77 D 25 76 24 75 Gps 23 22 1400 1300 Pout 21 20 19 87 1200 VDD = 50 Vdc, Pin = 5 W, IDQ(A+B) = 250 mA 89 91 93 95 97 99 101 103 105 107 1100 1000 109 Pout, OUTPUT POWER (WATTS) Gps, POWER GAIN (dB) 26 D, DRAIN EFFICIENCY (%) TYPICAL CHARACTERISTICS — 87.5–108 MHz BROADBAND REFERENCE CIRCUIT f, FREQUENCY (MHz) Figure 14. Power Gain, Drain Efficiency and CW Output Power versus Frequency 27 26 108 MHz 80 60 98 MHz 40 20 0 98 MHz 25 24 Gps 87.5 MHz 108 MHz 23 22 1500 1250 98 MHz 21 20 19 18 87.5 MHz Pout 1000 750 VDD = 50 Vdc lDQ(A+B) = 250 mA 500 250 108 MHz 17 D, DRAIN EFFICIENCY (%) 100 D f = 87.5 MHz Pout, OUTPUT POWER (WATTS) Gps, POWER GAIN (dB) 29 28 0 0 1 2 3 4 5 6 7 8 Pin, INPUT POWER (WATTS) Figure 15. Power Gain, Drain Efficiency and CW Output Power versus Input Power and Frequency MRFE6VP61K25N MRFE6VP61K25GN 12 RF Device Data Freescale Semiconductor, Inc. 87.5–108 MHz BROADBAND REFERENCE CIRCUIT f = 87.5 MHz Zo = 10 Zsource f = 108 MHz f = 108 MHz Zload f = 87.5 MHz f MHz Zsource 87.5 2.10 + j6.67 4.11 + j3.87 98 2.80 + j6.96 3.33 + j3.85 108 3.60 + j6.65 2.97 + j4.45 Zload Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload 50 = Test circuit impedance as measured from drain to drain, balanced configuration. Input Matching Network + Device Under Test -- -Z source Output Matching Network 50 + Z load Figure 16. Broadband Series Equivalent Source and Load Impedance — 87.5–108 MHz MRFE6VP61K25N MRFE6VP61K25GN RF Device Data Freescale Semiconductor, Inc. 13 HARMONIC MEASUREMENTS — 87.5–108 MHz BROADBAND REFERENCE CIRCUIT F1 H2 H3 H4 Fundamental (F1) 87.5 MHz 175 MHz –37 dB 262.5 MHz –30 dB 350 MHz –42 dB H3 H4 H2 (175 MHz) (262.5 MHz) (350 MHz) –37 dB –30 dB –42 dB H3 H2 Center: 228.5 MHz H4 35 MHz Span: 350 MHz Figure 17. 87.5 MHz Harmonics @ 1215 W CW MRFE6VP61K25N MRFE6VP61K25GN 14 RF Device Data Freescale Semiconductor, Inc. PACKAGE DIMENSIONS MRFE6VP61K25N MRFE6VP61K25GN RF Device Data Freescale Semiconductor, Inc. 15 MRFE6VP61K25N MRFE6VP61K25GN 16 RF Device Data Freescale Semiconductor, Inc. MRFE6VP61K25N MRFE6VP61K25GN RF Device Data Freescale Semiconductor, Inc. 17 MRFE6VP61K25N MRFE6VP61K25GN 18 RF Device Data Freescale Semiconductor, Inc. MRFE6VP61K25N MRFE6VP61K25GN RF Device Data Freescale Semiconductor, Inc. 19 MRFE6VP61K25N MRFE6VP61K25GN 20 RF Device Data Freescale Semiconductor, Inc. PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following resources to aid your design process. Application Notes AN1907: Solder Reflow Attach Method for High Power RF Devices in Over--Molded Plastic Packages AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins EB212: Using Data Sheet Impedances for RF LDMOS Devices White Paper RFPLASTICWP: Designing with Plastic RF Power Transistors Software Electromigration MTTF Calculator RF High Power Model .s2p File Development Tools Printed Circuit Boards To Download Resources Specific to a Given Part Number: 1. 2. 3. 4. Go to http://www.freescale.com/rf Search by part number Click part number link Choose the desired resource from the drop down menu REVISION HISTORY The following table summarizes revisions to this document. Revision Date Description 0 Feb. 2015 Initial Release of Data Sheet 1 Feb. 2015 Table 2, Maximum Ratings: added Total Device Dissipation, p. 2 Table 3, Thermal Characteristics: added CW Thermal Resistance, p. 2 Added Fig. 11, Narrowband Series Equivalent Source and Load Impedance -- 230 MHz, p. 8 2 Apr. 2015 Added part number MRFE6VP61K25GN, p. 1 Added OM--1230G--4L package photo, p. 1, and Mechanical Outline, pp. 18--20 MRFE6VP61K25N MRFE6VP61K25GN RF Device Data Freescale Semiconductor, Inc. 21 How to Reach Us: Home Page: freescale.com Web Support: freescale.com/support Information in this document is provided solely to enable system and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. Freescale reserves the right to make changes without further notice to any products herein. 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U.S. Pat. & Tm. Off. All other product or service names are the property of their respective owners. E 2015 Freescale Semiconductor, Inc. MRFE6VP61K25N MRFE6VP61K25GN Document Number: MRFE6VP61K25N Rev. 2, 4/2015 22 RF Device Data Freescale Semiconductor, Inc.