CPH6444 D

Ordering number : ENA1243C
CPH6444
N-Channel Power MOSFET
http://onsemi.com
60V, 4.5A, 78mΩ, Single CPH6
Features
•
•
Low ON-resistance
4V drive
•
•
Protection diode in
Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain to Source Voltage
Conditions
Ratings
Unit
VDSS
VGSS
Gate to Source Voltage
Drain Current (DC)
ID
IDP
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
PD
Tch
Storage Temperature
Tstg
60
V
±20
V
4.5
A
PW≤10μs, duty cycle≤1%
18
A
When mounted on ceramic substrate (900mm2×0.8mm)
1.6
W
150
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Ordering & Package Information
Package Dimensions
unit : mm (typ)
7018A-003
Device
Package
CPH6444-TL-W
5
4
0.9
3,000
pcs./reel
Packing Type: TL
Marking
2
0.95
ZW
1
3
0.4
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
LOT No.
0.05
1.6
0.2
0.6
2.8
0.2
0.6
6
memo
Pb-Free
and
Halogen Free
CPH6444-TL-W
0.15
2.9
CPH6
SC-74, SOT-26, SOT-457
Shipping
TL
Electrical Connection
1, 2, 5, 6
CPH6
3
4
Semiconductor Components Industries, LLC, 2013
July, 2013
71013 TKIM TC-00002972/62712 TKIM/22509 MSIM/61808PE TIIM TC-00001431 No. A1243-1/6
CPH6444
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
typ
Unit
max
60
V
Drain to Source Breakdown Voltage
V(BR)DSS
Zero-Gate Voltage Drain Current
IDSS
Gate to Source Leakage Current
IGSS
Cutoff Voltage
VGS(off)
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
1.2
Forward Transfer Admittance
| yfs |
VDS=10V, ID=2A
1.8
RDS(on)1
ID=2A, VGS=10V
60
78
mΩ
RDS(on)2
ID=1A, VGS=4.5V
74
104
mΩ
RDS(on)3
ID=1A, VGS=4V
81
114
mΩ
Static Drain to Source On-State Resistance
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Turn-ON Delay Time
ID=1mA, VGS=0V
VDS=60V, VGS=0V
Ratings
min
1
μA
±10
μA
2.6
3
V
S
505
pF
57
pF
Crss
37
pF
7.3
ns
Rise Time
td(on)
tr
Turn-OFF Delay Time
td(off)
Fall Time
tf
Qg
Total Gate Charge
Gate to Source Charge
Qgs
Gate to Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
VDS=20V, f=1MHz
See specified Test Circuit.
VDS=30V, VGS=10V, ID=4.5A
IS=4.5A, VGS=0V
9.8
ns
40
ns
24
ns
10
nC
1.6
nC
2.1
nC
0.83
1.2
V
Switching Time Test Circuit
VDD=30V
VIN
10V
0V
ID=2A
RL=15Ω
VOUT
VIN
D
PW=10μs
D.C.≤1%
G
CPH6444
P.G
50Ω
S
No. A1243-2/6
CPH6444
ID -- VDS
V
3.5
1.5
1.0
VGS=2.5V
2.5
2.0
1.5
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
Drain to Source Voltage, VDS -- V
0
1.0
Static Drain to Source
On-State Resistance, RDS(on) -- mΩ
ID=1A
2A
130
120
110
100
90
80
70
60
50
2
4
6
8
10
12
14
Gate to Source Voltage, VGS -- V
5
16
Source Current, IS -- A
2
Ta
°C
75
7
°C
25
°C
5
3
2
2
3
5 7 0.1
3
2
5 7 1.0
2
3
Drain Current, ID -- A
A
=1
, ID
V
.0
A
=1
, ID
A
V
=2
.5
=4
, ID
V
S
0
VG
0.
=1
V GS
=4
V GS
90
80
70
60
50
40
--40
--20
0
20
40
60
80
100
120
140
160
IT13792
IS -- VSD
VGS=0V
3
2
1.0
7
5
3
2
0.1
7
5
0.01
0.2
5 7 10
IT13793
VDD=30V
VGS=10V
Ciss, Coss, Crss -- pF
tf
10
td(on)
7
tr
1.0
1.2
IT13794
Ciss
5
2
0.8
f=1MHz
7
3
5
0.6
Ciss, Coss, Crss -- VDS
1000
td(off)
5
0.4
Diode Forward Voltage, VSD -- V
SW Time -- ID
7
3
2
100
7
Coss
5
Crss
3
2
3
2
0.1
110
100
3
2
0.1
7
0.01
4.0
IT13790
120
10
7
5
3
1.0
3.5
Ambient Temperature, Ta -- °C
VDS=10V
-25
=-
3.0
130
IT13791
| yfs | -- ID
7
2.5
140
30
20
--60
40
30
0
2.0
150
150
140
1.5
RDS(on) -- Ta
160
Ta=25°C
160
1.0
Gate to Source Voltage, VGS -- V
RDS(on) -- VGS
170
0.5
IT13789
Ta=7
5°C
25°
C
--25
°C
0
Static Drain to Source
On-State Resistance, RDS(on) -- mΩ
3.0
0.5
0
Forward Transfer Admittance, | yfs | -- S
3.5
1.0
0.5
Switching Time, SW Time -- ns
4.0
25°C
2.0
4.5
5°C
3.0V
--25
°C
2.5
5.0
Ta=
7
3.0
VDS=10V
5.5
Drain Current, ID -- A
Drain Current, ID -- A
3.5
ID -- VGS
6.0
4 .5
15.0
V 10.0V
4.0
V 4
.0V
7.0V
4.5
10
2
3
5
7
1.0
2
Drain Current, ID -- A
3
5
7
IT13795
0
10
20
30
40
50
Drain to Source Voltage, VDS -- V
60
IT13796
No. A1243-3/6
CPH6444
VGS -- Qg
10
3
2
8
Drain Current, ID -- A
Gate to Source Voltage, VGS -- V
9
7
6
5
4
3
1.0
7
5
3
2
1
3
2
1
2
3
4
5
6
7
8
Total Gate Charge, Qg -- nC
9
10
IT13797
PD -- Ta
1.8
IDP=18A(PW≤10μs)
10
0
1m μs
s
10
ms
10
0m
s
ID=4.5A
3
2
2
0
Allowable Power Dissipation, PD -- W
10
7
5
0.1
7
5
0
ASO
5
VDS=30V
ID=4.5A
DC
op
era
tio
Operation in this area
is limited by RDS(on).
n(
Ta
=
25
°C
)
Ta=25°C
Single pulse
When mounted on ceramic substrate (900mm2✕0.8mm)
0.01
0.1
2
3
5 7 1.0
2
3
5 7 10
2
Drain to Source Voltage, VDS -- V
3
5 7 100
IT13798
When mounted on ceramic substrate
(900mm2✕0.8mm)
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT13788
No. A1243-4/6
CPH6444
Outline Drawing
CPH6444-TL-W
Land Pattern Example
Mass (g) Unit
0.015 mm
* For reference
Unit: mm
2.4
1.4
0.6
0.95
0.95
No. A1243-5/6
CPH6444
Note on usage : Since the CPH6444 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No. A1243-6/6
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