ECH8308 D

Ordering number : ENA1182A
ECH8308
P-Channel Power MOSFET
http://onsemi.com
–12V, –10A, 12.5mΩ, Single ECH8
Features
•
•
•
Best suited for load switching
1.8V drive
Protection diode in
•
•
Low ON-resistance
Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Conditions
Ratings
Unit
VDSS
VGSS
Gate-to-Source Voltage
Drain Current (DC)
ID
IDP
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
PD
Tch
Storage Temperature
Tstg
PW≤10μs, duty cycle≤1%
--12
V
±10
V
--10
A
--40
A
1.6
W
150
°C
--55 to +150
°C
When mounted on ceramic substrate (900mm2×0.8mm)
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Product & Package Information
unit : mm (typ)
7011A-002
• Package
: ECH8
• JEITA, JEDEC
:• Minimum Packing Quantity : 3,000 pcs./reel
ECH8308-TL-H
Top View
0.25
2.9
Packing Type : TL
Marking
0.15
8
JK
5
Lot No.
2.3
TL
4
1
0.65
Electrical Connection
0.3
8
7
6
5
1
2
3
4
1 : Source
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
0.07
0.9
0.25
2.8
0 to 0.02
Bottom View
ECH8
Semiconductor Components Industries, LLC, 2013
July, 2013
60612 TKIM/62508PE TIIM TC-00001486 No. A1182-1/7
ECH8308
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
V(BR)DSS
IDSS
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Forward Transfer Admittance
IGSS
VGS(off)
| yfs |
Static Drain-to-Source On-State Resistance
RDS(on)1
RDS(on)2
Cutoff Voltage
RDS(on)3
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Conditions
Ratings
min
typ
ID=--1mA, VGS=0V
VDS=--12V, VGS=0V
VGS=±8V, VDS=0V
--12
VDS=--6V, ID=--1mA
VDS=--6V, ID=--4.5A
--0.4
12
ID=--4.5A, VGS=--4.5V
ID=--2A, VGS=--2.5V
ID=--1A, VGS=--1.8V
max
Unit
V
--10
μA
±10
μA
--1.3
21
V
S
9.2
12.5
mΩ
14
20
mΩ
22
33
mΩ
2300
pF
720
pF
Crss
550
pF
Turn-ON Delay Time
td(on)
24
ns
Rise Time
tr
130
ns
Turn-OFF Delay Time
td(off)
230
ns
Fall Time
tf
Total Gate Charge
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
VDS=--6V, f=1MHz
See specified Test Circuit.
VDS=--6V, VGS=--4.5V, ID=--10A
195
ns
26
nC
4.0
nC
7.1
IS=--10A, VGS=0V
--0.79
nC
--1.2
V
Switching Time Test Circuit
VDD= --6V
VIN
0V
--4.5V
ID= --5A
RL=1.2Ω
VOUT
VIN
D
PW=10μs
D.C.≤1%
G
ECH8308
P.G
50Ω
S
Ordering Information
Device
ECH8308-TL-H
Package
Shipping
memo
ECH8
3,000pcs./reel
Pb Free and Halogen Free
No. A1182-2/7
ECH8308
ID -- VDS
--2
VGS= --1.2V
--4
--2
--1
0
0
--0.2
--0.3
--0.4
--0.5
--0.6
--0.7
--0.8
Drain-to-Source Voltage, VDS -- V
0
--1.0
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
--5A
25
20
15
10
5
--1
--2
--3
--4
--5
--6
--7
--8
3
2
C
5°
--2
=
°C
Ta
75
°C
25
1.0
7
5
2
3
5 7 --0.1
2
3
5 7 --1.0
Drain Current, ID -- A
2
3
--1.8
IT13602
--3A
V, I D=
--2.5
V GS=
15
= --5A
4.5V, I D
V GS= --
10
5
--40
--20
100
120
140
160
IT13604
--1.0
7
5
3
2
--0.1
7
5
3
2
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
IT13606
Ciss, Coss, Crss -- VDS
f=1MHz
Ciss, Coss, Crss -- pF
2
tf
100
tr
3
Ciss
2
1000
Coss
7
Crss
5
td(on)
3
80
5
td(off)
5
60
VGS=0V
7
5
7
40
Diode Forward Voltage, VSD -- V
7
3
20
IS -- VSD
0
VDD= --6V
VGS= --4.5V
1000
0
--10
7
5
3
2
5 7 --10
IT13605
SW Time -- ID
2
--1.6
Ta=
7
2
2
10
--0.01
20
--0.01
7
5
3
2
--0.001
3
0.1
--0.01
--1.4
= --1A
V, I D
.8
1
-VGS=
25
3
2
VDS= --6V
2
--1.2
Ambient Temperature, Ta -- °C
⏐yfs⏐ -- ID
7
5
3
--1.0
30
IT13603
Source Current, IS -- A
Forward Transfer Admittance, ⏐yfs⏐ -- S
Gate-to-Source Voltage, VGS -- V
10
7
5
--0.8
RDS(on) -- Ta
0
--60
0
0
--0.6
Gate-to-Source Voltage, VGS -- V
35
--3A
30
--0.4
Ta=25°C
ID= --1A
35
--0.2
IT13601
RDS(on) -- VGS
40
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
--0.9
5°C
25°C
--25°
C
--0.1
0
Switching Time, SW Time -- ns
25°
C
--3
--6
°C
--4
--8
--25
--5
75
°C
--6
--10
Ta
=
--7
--12
--4.5V
Drain Current, ID -- A
--8
VDS= --6V
--1.5V
Drain Current, ID -- A
--9
ID -- VGS
--14
--2.5V
--3.5V -1.8V
--8.0V
--10
3
2
2 3
5 7 --0.1
2 3
5 7 --1.0
2 3
Drain Current, ID -- A
5 7 --10
2
3
IT13607
0
--2
--4
--6
--8
--10
Drain-to-Source Voltage, VDS -- V
--12
IT13608
No. A1182-3/7
ECH8308
VGS -- Qg
7
5
VDS= --6V
ID= --10A
--4.0
IDP= --40A
PW≤10μs
3
1m
2
3
2
0
2
4
6
8
10
12
14
16
18
20
Total Gate Charge, Qg -- nC
22
24
26
IT13609
PD -- Ta
1.8
)
°C
25
2
0
Operation in this
area is limited by RDS(on).
--1.0
7
5
3
s
a=
(T
--1.0
0m
n
--1.5
10
io
at
er
--2.0
s
m
--2.5
s
ID= --10A
10
--3.0
--10
7
5
op
Drain Current, ID -- A
--3.5
--0.5
Allowable Power Dissipation, PD -- W
ASO
C
D
Gate-to-Source Voltage, VGS -- V
--4.5
Ta=25°C
Single pulse
When mounted on ceramic substrate (900mm2✕0.8mm)
--0.1
--0.01
2 3
5 7 --0.1
2 3
5 7 --1.0
2 3
5 7 --10 2 3
IT13610
Drain-to-Source Voltage, VDS -- V
When mounted on ceramic substrate
(900mm2✕0.8mm)
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT13611
No. A1182-4/7
ECH8308
Embossed Taping Specification
ECH8308-TL-H
No. A1182-5/7
ECH8308
Outline Drawing
ECH8308-TL-H
Land Pattern Example
Mass (g) Unit
0.02
mm
* For reference
Unit: mm
2.8
0.6
0.4
0.65
No. A1182-6/7
ECH8308
Note on usage : Since the ECH8308 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No. A1182-7/7
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