ENA2243 D

Ordering number : ENA2243
ECH8697R
N-Channel Power MOSFET
24V, 10A, 11.6mΩ, Dual ECH8 Common Drain
http://onsemi.com
Features
• Low On-resistance
• 2.5V drive
• Common-Drain Type
• Protection diode in
• Built-in gate protection resistor
• Best suited for LiB charging and discharging switch
• Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain to Source Voltage
VDSS
24
V
Gate to Source Voltage
VGSS
±12.5
V
Drain Current (DC)
ID
10
A
Drain Current (Pulse)
IDP
PW≤10μs, duty cycle≤1%
60
A
Allowable Power Dissipation
PD
When mounted on ceramic substrate(1000mm2×0.8mm) 1unit
1.5
W
Total Dissipation
PT
When mounted on ceramic substrate(1000mm2×0.8mm)
1.6
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
- 55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Electrical Characteristics at Ta = 25°C
Ratings
Parameter
Symbol
Conditions
Unit
min
typ
max
Drain to Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0V
Zero-Gate Voltage Drain Current
IDSS
VDS=20V, VGS=0V
1
μA
Gate to Source Leakage Current
IGSS
VGS=±8V, VDS=0V
±1
μA
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
1.3
V
Forward Transfer Admittance
| yfs |
VDS=10V, ID=5A
RDS(on)1
ID=5A, VGS=4.5V
7.4
9.3
11.6
mΩ
RDS(on)2
ID=5A, VGS=4.0V
7.7
9.7
12.6
mΩ
RDS(on)3
ID=5A, VGS=3.1V
8.5
10.7
15
mΩ
RDS(on)4
ID=2.5A, VGS=2.5V
10
12.5
17.5
mΩ
Static Drain to Source On-State Resistance
24
V
0.5
5.0
S
Turn-ON Delay Time
td(on)
160
ns
Rise Time
tr
230
ns
Turn-OFF Delay Time
td(off)
19700
ns
Fall Time
tf
23600
ns
Total Gate Charge
Qg
6
nC
Gate to Source Charge
Qgs
1.1
nC
Gate to Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
See specified Test Circuit.
VDS=10V, VGS=4.5V, ID=10A
0.9
IS=10A, VGS=0V
0.8
nC
1.2
V
ORDERING INFORMATION
See detailed ordering and shipping information on page 4 of this data sheet.
Semiconductor Components Industries, LLC, 2013
November, 2013
N1313 TKIM TC-00003063 No. A2243-1/5
ECH8697R
No.A2243-2/5
ECH8697R
No.A2243-3/5
ECH8697R
Package Dimensions
ECH8697R-TL-W
SOT-28FL/ECH8
CASE 318BF
ISSUE O
Unit : mm
1: Source1
2: Gate1
3: Source2
4: Gate2
5: Drain
6: Drain
7: Drain
8: Drain
Land Pattern Example
2.8
0.6
0.4
0.65
Ordering & Package Information
Device
Package
ECH8697R-TL-W
ECH8
Electrical Connection
8
7
6
5
1
2
3
4
Packing Type:TL
Shipping
note
3,000
pcs. / reel
Pb-Free
and
Halogen Free
Marking
UU
TL
LOT No.
Switching Time Test Circuit
No.A2243-4/5
ECH8697R
Note on usage : Since the ECH8697R is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
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PS No.A2243-5/5
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