Freescale Semiconductor Technical Data Document Number: MRFE6VP5600H Rev. 1, 1/2011 RF Power Field Effect Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz. • Typical Performance: VDD = 50 Volts, IDQ = 100 mA Pout (W) f (MHz) Gps (dB) ηD (%) IRL (dB) Pulsed (100 μsec, 20% Duty Cycle) 600 Peak 230 25.0 74.6 --18 CW 600 Avg. 230 24.6 75.2 --17 Signal Type MRFE6VP5600HR6 MRFE6VP5600HSR6 1.8--600 MHz, 600 W CW, 50 V LATERAL N--CHANNEL BROADBAND RF POWER MOSFETs • Capable of Handling a Load Mismatch of 65:1 VSWR, @ 50 Vdc, 230 MHz, at all Phase Angles, Designed for Enhanced Ruggedness • 600 Watts Pulsed Peak Power, 20% Duty Cycle, 100 μsec Features • Unmatched Input and Output Allowing Wide Frequency Range Utilization • Device can be used Single--Ended or in a Push--Pull Configuration • Qualified Up to a Maximum of 50 VDD Operation • Characterized from 30 V to 50 V for Extended Power Range • Suitable for Linear Application with Appropriate Biasing • Integrated ESD Protection with Greater Negative Gate--Source Voltage Range for Improved Class C Operation • Characterized with Series Equivalent Large--Signal Impedance Parameters • RoHS Compliant • In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel. For R5 Tape and Reel options, see p. 12. CASE 375D--05, STYLE 1 NI--1230 MRFE6VP5600HR6 CASE 375E--04, STYLE 1 NI--1230S MRFE6VP5600HSR6 PARTS ARE PUSH--PULL Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS --0.5, +130 Vdc Gate--Source Voltage VGS --6.0, +10 Vdc Storage Temperature Range Tstg -- 65 to +150 °C Case Operating Temperature TC 150 °C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1667 8.33 W W/°C (Top View) Operating Junction Temperature (1,2) TJ 225 °C Figure 1. Pin Connections RFin/VGS 3 1 RFout/VDS RFin/VGS 4 2 RFout/VDS Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 68°C, 600 W Pulsed, 100 μsec Pulse Width, 20% Duty Cycle, 100 mA, 230 MHz Case Temperature 60°C, 600 W CW, 100 mA, 230 MHz Symbol Value (2,3) ZθJC RθJC 0.022 0.12 Unit °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. © Freescale Semiconductor, Inc., 2010--2011. All rights reserved. RF Device Data Freescale Semiconductor MRFE6VP5600HR6 MRFE6VP5600HSR6 1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 2 (Minimum) Machine Model (per EIA/JESD22--A115) B (Minimum) Charge Device Model (per JESD22--C101) IV (Minimum) Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) Characteristic Off Characteristics Symbol Min Typ Max Unit IGSS — — 1 μAdc 130 — — Vdc (1) Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) Drain--Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 mA) V(BR)DSS Zero Gate Voltage Drain Leakage Current (VDS = 50 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 100 Vdc, VGS = 0 Vdc) IDSS — — 20 μAdc Gate Threshold Voltage (1) (VDS = 10 Vdc, ID = 960 μAdc) VGS(th) 1.7 2.2 2.7 Vdc Gate Quiescent Voltage (VDD = 50 Vdc, ID = 100 mAdc, Measured in Functional Test) VGS(Q) 2.0 2.5 3.0 Vdc Drain--Source On--Voltage (1) (VGS = 10 Vdc, ID = 2 Adc) VDS(on) — 0.26 — Vdc Reverse Transfer Capacitance (VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 1.60 — pF Output Capacitance (VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 129 — pF Input Capacitance (VDS = 50 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz) Ciss — 342 — pF On Characteristics Dynamic Characteristics (1) Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 100 mA, Pout = 600 W Peak (120 W Avg.), f = 230 MHz, Pulsed, 100 μsec Pulse Width, 20% Duty Cycle Power Gain Gps 23.5 25.0 26.5 dB Drain Efficiency ηD 73.5 74.6 — % Input Return Loss IRL — --18 --12 dB 1. Each side of device measured separately. MRFE6VP5600HR6 MRFE6VP5600HSR6 2 RF Device Data Freescale Semiconductor VBIAS + C10 C11 C12 C13 R1 COAX1 Z11 Z3 RF INPUT Z1 Z5 Z7 Z9 L1 Z13 Z6 C4 Z8 C5 Z10 L2 Z14 C2 Z2 Z4 C1 C3 Z12 COAX2 R2 VBIAS + C7 C6 L3 C8 C9 C22 + + + C23 C24 C25 VSUPPLY Z19 COAX3 Z17 Z15 Z21 Z23 Z25 C16 Z27 Z29 C17 Z31 DUT C14 C15 RF Z32 OUTPUT C20 C21 Z16 Z22 Z24 Z26 Z28 Z30 C18 Z18 COAX4 C19 Z20 L4 C26 Z1 Z2 Z3, Z4 Z5, Z6 Z7, Z8 Z9, Z10 0.192″ x 0.082″ Microstrip 0.175″ x 0.082″ Microstrip 0.170″ x 0.100″ Microstrip 0.116″ x 0.285″ Microstrip 0.116″ x 0.285″ Microstrip 0.108″ x 0.285″ Microstrip Z11*, Z12* Z13, Z14 Z15, Z16 Z17*, Z18* Z19*, Z20* Z21, Z22 + + + C27 C28 C29 VSUPPLY 0.872″ x 0.058″ Microstrip 0.412″ x 0.726″ Microstrip 0.371″ x 0.507″ Microstrip 0.466″ x 0.363″ Microstrip 1.187″ x 0.154″ Microstrip 0.104″ x 0.507″ Microstrip Z23, Z24 Z25, Z26 Z27, Z28 Z29, Z30 Z31 Z32 1.251″ x 0.300″ Microstrip 0.127″ x 0.300″ Microstrip 0.058″ x 0.300″ Microstrip 0.058″ x 0.300″ Microstrip 0.186″ x 0.082″ Microstrip 0.179″ x 0.082″ Microstrip * Line length includes microstrip bends Figure 1. MRFE6VP5600HR6(HSR6) Test Circuit Schematic -- Pulsed MRFE6VP5600HR6 MRFE6VP5600HSR6 RF Device Data Freescale Semiconductor 3 C23 C10 C11 C12 C24 C25 C13 C22 COAX1 COAX3 R1 C1 L3 C2 C4 L1 C3 L2 C5 C14 C20 C18 C19 C21 L4 R2 COAX2 C16 C17 C15 COAX4 C26 C6 C7 C8 C9 C27 MRFE6VP5600H Rev. 1 C28 C29 Figure 2. MRFE6VP5600HR6(HSR6) Test Circuit Component Layout -- Pulsed Table 5. MRFE6VP5600HR6(HSR6) Test Circuit Component Designations and Values -- Pulsed Part Description Part Number Manufacturer C1 12 pF Chip Capacitor ATC100B120JT500XT ATC C2, C3 27 pF Chip Capacitors ATC100B270JT500XT ATC C4 0.8--8.0 pF Variable Capacitor, Gigatrim 27291SL Johanson C5 33 pF Chip Capacitor ATC100B330JT500XT ATC C6, C10 22 μF, 35 V Tantalum Capacitors T491X226K035AT Kemet C7, C11 0.1 μF Chip Capacitors CDR33BX104AKYS AVX C8, C12 220 nF Chip Capacitors C1812C224K5RACTU Kemet C9, C13, C22, C26 1000 pF Chip Capacitors ATC100B102JT50XT ATC C14 36 pF Chip Capacitor ATC100B360JT500XT ATC C15 51 pF Chip Capacitor ATC100B510GT500XT ATC C16, C17, C18, C19 240 pF Chip Capacitors ATC100B241JT200XT ATC C20 39 pF Chip Capacitor ATC100B390JT500XT ATC C21 10 pF Chip Capacitor ATC100B100JT500XT ATC C23, C24, C25, C27, C28, C29 470 μF, 63 V Electrolytic Capacitors MCGPR63V477M13X26--RH Multicomp Coax1, 2, 3, 4 25 Ω Semi Rigid Coax, 2.2″ Long UT--141C--25 Micro Coax L1, L2 5 nH Inductors A02TKLC Coilcraft L3, L4 6.6 nH Inductors GA3093--ALC Coilcraft R1, R2 10 Ω Chip Resistors CRCW120610R0JNEA Vishay PCB 0.030″, εr = 2.55 AD255A Arlon MRFE6VP5600HR6 MRFE6VP5600HSR6 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 64 1000 Coss Measured with ±30 mV(rms)ac @ 1 MHz VGS = 0 Vdc 10 Crss 1 0 10 20 40 30 VDD = 50 Vdc, IDQ = 100 mA, f = 230 MHz Pulse Width = 100 μsec, 20% Duty Cycle 63 62 P3dB = 58.3 dBm (679 W) 61 60 P1dB = 58.0 dBm (632 W) 59 32 33 34 35 Pin, INPUT POWER (dBm) PULSED VDS, DRAIN--SOURCE VOLTAGE (VOLTS) Figure 3. Capacitance versus Drain--Source Voltage Gps 24 60 23 50 22 40 ηD 21 20 40 22 50 V 21 45 V 20 40 V 35 V VDD = 30 V 17 100 0 300 200 400 500 Pout, OUTPUT POWER (WATTS) PULSED Figure 5. Pulsed Power Gain and Drain Efficiency versus Output Power Figure 6. Pulsed Power Gain versus Output Power 27 45 V 40 V 35 V VDD = 30 V 50 V 26 Gps, POWER GAIN (dB) 70 60 50 40 VDD = 50 Vdc, IDQ = 100 mA, f = 230 MHz Pulse Width = 100 μsec, 20% Duty Cycle 30 0 100 200 300 400 500 600 VDD = 50 Vdc, IDQ = 100 mA, f = 230 MHz Pulse Width = 100 μsec, 20% Duty Cycle 25 85_C 80 --30_C 70 60 TC = --30_C 50 23 25_C 40 22 ηD 85_C 21 700 90 25_C Gps 24 700 600 Pout, OUTPUT POWER (WATTS) PULSED 80 ηD, DRAIN EFFICIENCY (%) 23 18 20 1000 100 24 19 30 90 20 25 Gps, POWER GAIN (dB) 70 25 37 VDD = 50 Vdc, IDQ = 100 mA, f = 230 MHz Pulse Width = 100 μsec, 20% Duty Cycle 26 80 ηD, DRAIN EFFICIENCY (%) 26 Gps, POWER GAIN (dB) 27 90 VDD = 50 Vdc, IDQ = 100 mA, f = 230 MHz Pulse Width = 100 μsec, 20% Duty Cycle 36 Figure 4. Pulsed Output Power versus Input Power Note: Each side of device measured separately. 27 Actual 58 57 31 50 Ideal P2dB = 58.2 dBm (664 W) 20 40 100 ηD, DRAIN EFFICIENCY (%) 100 Pout, OUTPUT POWER (dBm) PULSED C, CAPACITANCE (pF) Ciss 30 20 1000 Pout, OUTPUT POWER (WATTS) PULSED Pout, OUTPUT POWER (WATTS) PULSED Figure 7. Pulsed Drain Efficiency versus Output Power Figure 8. Pulsed Power Gain and Drain Efficiency versus Output Power MRFE6VP5600HR6 MRFE6VP5600HSR6 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS 109 MTTF (HOURS) 108 107 106 105 104 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 50 Vdc, Pout = 600 W Avg., and ηD = 75.2%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 9. MTTF versus Junction Temperature — CW MRFE6VP5600HR6 MRFE6VP5600HSR6 6 RF Device Data Freescale Semiconductor Zsource Zo = 10 Ω f = 230 MHz f = 230 MHz Zload VDD = 50 Vdc, IDQ = 100 mA, Pout = 600 W Peak f MHz Zsource Ω Zload Ω 230 1.78 + j5.45 2.75 + j5.30 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration. Input Matching Network + Device Under Test -- -Z source Output Matching Network + Z load Figure 10. Series Equivalent Source and Load Impedance MRFE6VP5600HR6 MRFE6VP5600HSR6 RF Device Data Freescale Semiconductor 7 PACKAGE DIMENSIONS MRFE6VP5600HR6 MRFE6VP5600HSR6 8 RF Device Data Freescale Semiconductor MRFE6VP5600HR6 MRFE6VP5600HSR6 RF Device Data Freescale Semiconductor 9 MRFE6VP5600HR6 MRFE6VP5600HSR6 10 RF Device Data Freescale Semiconductor MRFE6VP5600HR6 MRFE6VP5600HSR6 RF Device Data Freescale Semiconductor 11 PRODUCT DOCUMENTATION AND SOFTWARE Refer to the following documents and software to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software • Electromigration MTTF Calculator • RF High Power Model • .s2p File For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. R5 TAPE AND REEL OPTION R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel. The R5 tape and reel option for MRFE6VP5600H and MRFE6VP5600HS parts will be available for 2 years after release of MRFE6VP5600H and MRFE6VP5600HS. Freescale Semiconductor, Inc. reserves the right to limit the quantities that will be delivered in the R5 tape and reel option. At the end of the 2 year period customers who have purchased these devices in the R5 tape and reel option will be offered MRFE6VP5600H and MRFE6VP5600HS in the R6 tape and reel option. REVISION HISTORY The following table summarizes revisions to this document. Revision Date Description 0 Dec. 2010 • Initial Release of Data Sheet 1 Jan. 2011 • Fig. 1, Pin Connections, corrected pin 4 label from RFout/VGS to RFin/VGS, p. 1 MRFE6VP5600HR6 MRFE6VP5600HSR6 12 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2010--2011. All rights reserved. MRFE6VP5600HR6 MRFE6VP5600HSR6 Document Number: RF Device Data MRFE6VP5600H Rev. 1, 1/2011 Freescale Semiconductor 13