Data Sheet

Freescale Semiconductor
Technical Data
Document Number: MRF6VP21KH
Rev. 4, 4/2010
RF Power Field Effect Transistor
N--Channel Enhancement--Mode Lateral MOSFET
MRF6VP21KHR6
Designed primarily for pulsed wideband applications with frequencies up to
235 MHz. Device is unmatched and is suitable for use in industrial, medical
and scientific applications.
• Typical Pulsed Performance at 225 MHz: VDD = 50 Volts, IDQ = 150 mA,
Pout = 1000 Watts Peak (200 W Avg.), Pulse Width = 100 μsec,
Duty Cycle = 20%
Power Gain — 24 dB
Drain Efficiency — 67.5%
• Capable of Handling 10:1 VSWR, @ 50 Vdc, 225 MHz, 1000 Watts Peak
Power
Features
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• CW Operation Capability with Adequate Cooling
• Qualified Up to a Maximum of 50 VDD Operation
• Integrated ESD Protection
• Designed for Push--Pull Operation
• Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
• RoHS Compliant
• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
10--235 MHz, 1000 W, 50 V
LATERAL N--CHANNEL
BROADBAND
RF POWER MOSFET
CASE 375D--05, STYLE 1
NI--1230
PART IS PUSH--PULL
RFinA/VGSA 3
1 RFoutA/VDSA
RFinB/VGSB 4
2 RFoutB/VDSB
(Top View)
Figure 1. Pin Connections
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +110
Vdc
Gate--Source Voltage
VGS
--6, +10
Vdc
Storage Temperature Range
Tstg
-- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
Symbol
Value (2,3)
Unit
ZθJC
0.03
°C/W
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 1000 W Pulsed, 100 μsec Pulse Width, 20% Duty Cycle
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
© Freescale Semiconductor, Inc., 2008, 2010. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6VP21KHR6
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2 (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
IGSS
—
—
20
μAdc
V(BR)DSS
110
—
—
Vdc
Zero Gate Voltage Drain Leakage Current
(VDS = 50 Vdc, VGS = 0 Vdc)
IDSS
—
—
100
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 100 Vdc, VGS = 0 Vdc)
IDSS
—
—
5
mA
Gate Threshold Voltage (1)
(VDS = 10 Vdc, ID = 1600 μAdc)
VGS(th)
1
1.68
3
Vdc
Gate Quiescent Voltage (2)
(VDD = 50 Vdc, ID = 150 mAdc, Measured in Functional Test)
VGS(Q)
1.5
2.2
3.5
Vdc
Drain--Source On--Voltage (1)
(VGS = 10 Vdc, ID = 4 Adc)
VDS(on)
—
0.28
—
Vdc
Reverse Transfer Capacitance
(VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
3.3
—
pF
Output Capacitance
(VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
147
—
pF
Input Capacitance
(VDS = 50 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
Ciss
—
506
—
pF
Characteristic
Off Characteristics
(1)
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
Drain--Source Breakdown Voltage
(ID = 300 mA, VGS = 0 Vdc)
On Characteristics
Dynamic Characteristics (1)
Functional Tests (2) (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 150 mA, Pout = 1000 W Peak (200 W Avg.), f = 225 MHz,
100 μsec Pulse Width, 20% Duty Cycle
Power Gain
Gps
22
24
26
dB
Drain Efficiency
ηD
65
67.5
—
%
Input Return Loss
IRL
—
--15
--9
dB
1. Each side of device measured separately.
2. Measurement made with device in push--pull configuration.
MRF6VP21KHR6
2
RF Device Data
Freescale Semiconductor
VBIAS
B1
+
+
+
C1
C2
C3
L1
R2
R1
C4
C5
C6
C7
C8
Z4
C9
Z6
Z3
Z2
Z1
+
L4
C10
C11
C13
Z10 Z12
RF
INPUT
VSUPPLY
Z5
C12
Z7
C16 C17 C18 C19
C15
+
C20
Z16
Z8
L3
J1
L2
C21
Z14
C14
+
Z18
DUT
C23
C24
Z19
J2
Z9
Z11
Z13
Z15
C25
Z17
T1
RF
OUTPUT
T2
C22
Z1
Z2*
Z3*
Z4, Z5
Z6, Z7
Z8, Z9
Z10, Z11
0.100″ x 0.082″ Microstrip
1.557″ x 0.082″ Microstrip
0.055″ x 0.082″ Microstrip
0.133″ x 0.193″ Microstrip
0.143″ x 0.518″ Microstrip
0.357″ x 0.518″ Microstrip
0.200″ x 0.518″ Microstrip
Z12, Z13
Z14, Z15
Z16*, Z17*
Z18
Z19
PCB
0.599″ x 0.253″ Microstrip
0.110″ x 0.253″ Microstrip
0.055″ x 0.253″ Microstrip
0.069″ x 0.082″ Microstrip
1.050″ x 0.082″ Microstrip
Arlon CuClad 250GX--0300--55--22, 0.030″, εr = 2.55
*Line length includes microstrip bends.
Figure 2. MRF6VP21KHR6 Test Circuit Schematic
Table 5. MRF6VP21KHR6 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1
95 Ω, 100 MHz Long Ferrite Bead
2743021447
Fair--Rite
C1
47 μF, 50 V Electrolytic Capacitor
476KXM050M
Illinois Cap
C2
22 μF, 35 V Tantalum Capacitor
T491X226K035AT
Kemet
C3
10 μF, 35 V Tantalum Capacitor
T491D106K035AT
Kemet
C4, C9, C17
10K pF Chip Capacitors
ATC200B103KT50XT
ATC
C5, C16
20K pF Chip Capacitors
ATC200B203KT50XT
ATC
C6, C15
0.1 μF, 50 V Chip Capacitors
CDR33BX104AKYS
Kemet
C7
2.2 μF, 50 V Chip Capacitor
C1825C225J5RAC
Kemet
C8
0.22 μF, 100 V Chip Capacitor
C1825C223K1GAC
Kemet
C10, C11, C13, C14
1000 pF Chip Capacitors
ATC100B102JT50XT
ATC
C12, C21, C22
27 pF Chip Capacitors
ATC100B270JT500XT
ATC
C18, C19, C20
470 μF, 63 V Electrolytic Capacitors
EKME630ELL471MK25S
Multicomp
C23, C24
68 pF Chip Capacitors
ATC100B680JT500XT
ATC
C25
4.7 pF Chip Capacitor
ATC100B4R7JT500XT
ATC
J1, J2
Jumpers from PCB to T1 and T2
Copper Foil
L1
82 nH Inductor
1812SMS--82NJC
CoilCraft
L2
8 nH Inductor
A03TKLC
CoilCraft
L3
1 Turn Inductor, Red Coil
GA3092--AL
CoilCraft
L4*
10 Turn, #18 AWG Inductor, Hand Wound
Copper Wire
R1
1 KΩ, 1/4 W Axial Leaded Resistor
CMF601000R0FKEK
Vishay
R2
20 Ω, 3 W Chip Resistor
CPF320R000FKE14
Vishay
T1
Balun
TUI--9
Comm Concepts
T2
Balun
TUO--4
Comm Concepts
*L4 is wrapped around R2.
MRF6VP21KHR6
RF Device Data
Freescale Semiconductor
3
C1
C19
C2 C3
C17
C16
C15
C4
C5
C6
B1
L1
C20
C14
C7
C8
C9
C18
R1
C21
C10
C11
L4, R2*
C13
T2
T1
C23
J1
L3
L2
C12
CUT OUT AREA
C24
C22
J2
C25
MRF6VP21KH
Rev. 1
* L4 is wrapped around R2.
Figure 3. MRF6VP21KHR6 Test Circuit Component Layout
MRF6VP21KHR6
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
100
Ciss
ID, DRAIN CURRENT (AMPS)
C, CAPACITANCE (pF)
1000
Coss
100
Measured with ±30 mV(rms)ac @ 1 MHz
VGS = 0 Vdc
Crss
10
TJ = 200°C
10
TC = 25°C
1
1
0
10
20
30
40
1
50
100
10
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Note: Each side of device measured separately.
Note: Each side of device measured separately.
Figure 4. Capacitance versus Drain--Source Voltage
Figure 5. DC Safe Operating Area
26
80
VDD = 50 Vdc, IDQ = 150 mA, f = 225 MHz
25 Pulse Width = 100 μsec, Duty Cycle = 20%
60
Gps
50
23
22
40
21
30
ηD
20
19
10
100
20
1000
63
P1dB = 60.37 dBm (1088.93 W)
62
61
Actual
60
59
58
57
VDD = 50 Vdc, IDQ = 150 mA, f = 225 MHz
Pulse Width = 100 μsec, Duty Cycle = 20%
56
10
2000
Ideal
P3dB = 61.33 dBm (1358.31 W)
64
70
Pout, OUTPUT POWER (dBm)
24
65
ηD, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
TJ = 175°C
TJ = 150°C
55
30
31
32
33
34
35
36
37
38
Pin, INPUT POWER (dBm) PULSED
Figure 6. Pulsed Power Gain and Drain Efficiency
versus Output Power
Figure 7. Pulsed Output Power versus
Input Power
28
40
39
Pout, OUTPUT POWER (WATTS) PULSED
28
IDQ = 6000 mA
3600 mA
Gps, POWER GAIN (dB)
Gps, POWER GAIN (dB)
26
1500 mA
24
750 mA
22
375 mA
20
150 mA
18
24
20
VDD = 30 V
40 V
35 V
16
100
1000
2000
12
50 V
IDQ = 150 mA, f = 225 MHz
Pulse Width = 100 μsec
Duty Cycle = 20%
VDD = 50 Vdc, f = 225 MHz
Pulse Width = 100 μsec, Duty Cycle = 20%
10
45 V
0
200
400
600
800
1000
1200
1400
Pout, OUTPUT POWER (WATTS) PULSED
Pout, OUTPUT POWER (WATTS) PULSED
Figure 8. Pulsed Power Gain versus
Output Power
Figure 9. Pulsed Power Gain versus
Output Power
1600
MRF6VP21KHR6
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
26
60
85_C
25_C
Gps, POWER GAIN (dB)
Pout, OUTPUT POWER (dBm)
TC = --30_C
55
50
VDD = 50 Vdc
IDQ = 150 mA
f = 225 MHz
Pulse Width = 100 μsec
Duty Cycle = 20%
45
40
20
25
35
30
40
90
VDD = 50 Vdc
25 IDQ = 150 mA
f = 225 MHz
24 Pulse Width = 100 μsec
Duty Cycle = 20%
23
TC = --30_C
80
70
85_C
60
25_C
50
22
40
21
Gps
20
ηD
30
19
20
18
10
45
ηD, DRAIN EFFICIENCY (%)
65
1000
100
10
2000
Pin, INPUT POWER (dBm) PULSED
Pout, OUTPUT POWER (WATTS) PULSED
Figure 10. Pulsed Output Power versus
Input Power
Figure 11. Pulsed Power Gain and Drain Efficiency
versus Output Power
109
0.2
0.16
D = 0.7
0.14
0.12
MTTF (HOURS)
ZJC, THERMAL IMPEDANCE (°C/W)
0.18
D = 0.5
0.1
PD
0.08
0.04
D = Duty Factor = t1/t2
t1 = Pulse Width
t2 = Pulse Period
TJ = PD * ZJC + TC
D = 0.1
0.02
0
0.00001
t1
t2
0.06
0.0001
0.001
0.01
0.1
1
108
107
106
10
RECTANGULAR PULSE WIDTH (S)
Figure 12. Maximum Transient Thermal Impedance
90
110
130
150
170
190
210
230
250
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 50 Vdc, Pout = 1000 W Peak, Pulse Width = 100 μsec,
Duty Cycle = 20%, and ηD = 67.5%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 13. MTTF versus Junction Temperature
MRF6VP21KHR6
6
RF Device Data
Freescale Semiconductor
f = 225 MHz
Zsource
Zo = 5 Ω
f = 225 MHz
Zload
VDD = 50 Vdc, IDQ = 150 mA, Pout = 1000 W Peak
f
MHz
Zsource
Ω
Zload
Ω
225
1.16 + j4.06
2.86 + j1.10
Zsource = Test circuit impedance as measured from
gate to gate, balanced configuration.
Zload
= Test circuit impedance as measured from
drain to drain, balanced configuration.
Input
Matching
Network
+
Device
Under
Test
--
-Z
source
Output
Matching
Network
+
Z
load
Figure 14. Series Equivalent Source and Load Impedance
MRF6VP21KHR6
RF Device Data
Freescale Semiconductor
7
PACKAGE DIMENSIONS
MRF6VP21KHR6
8
RF Device Data
Freescale Semiconductor
MRF6VP21KHR6
RF Device Data
Freescale Semiconductor
9
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
• RF High Power Model
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Jan. 2008
• Initial Release of Data Sheet
1
Apr. 2008
• Corrected description and part number for the R1 resistor and updated R2 resistor to latest RoHS
compliant part number in Table 5, Test Circuit Component Designations and Values, and updated the
footnote to read “L4” versus “L3”, p. 3.
• Added Fig. 12, Maximum Transient Thermal Impedance, p. 6
2
Sept. 2008
• Added Note to Fig. 4, Capacitance versus Drain--Source Voltage, to denote that each side of device is
measured separately, p. 5
• Updated Fig. 5, DC Safe Operating Area, to clarify that measurement is on a per--side basis, p. 5
• Corrected Fig. 13, MTTF versus Junction Temperature, to reflect the correct die size and increased the
MTTF factor accordingly, p. 6
3
Dec. 2008
• Fig. 14, Series Equivalent Source and Load Impedance, corrected Zsource copy to read “Test circuit
impedance as measured from gate to gate, balanced configuration” and Zload copy to read “Test circuit
impedance as measured from drain to drain, balanced configuration”; replaced impedance diagram to
show push--pull test conditions, p. 7
4
Apr. 2010
• Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related
“Continuous use at maximum temperature will affect MTTF” footnote added, p. 1
• Reporting of pulsed thermal data now shown using the ZθJC symbol, p. 1
• Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software,
p. 10
MRF6VP21KHR6
10
RF Device Data
Freescale Semiconductor
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MRF6VP21KHR6
Document
RF
DeviceNumber:
Data MRF6VP21KH
Rev. 4, 4/2010
Freescale
Semiconductor
11