Data Sheet

Freescale Semiconductor
Technical Data
Document Number: MW7IC2425N
Rev. 0, 3/2009
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed primarily for CW large - signal output and driver applications at
2450 MHz. Devices are suitable for use in industrial, medical and scientific
applications.
• Typical CW Performance: VDD = 28 Volts, IDQ1 = 55 mA, IDQ2 = 195 mA,
Pout = 25 Watts CW, f = 2450 MHz
Power Gain — 27.7 dB
Power Added Efficiency — 43.8%
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2450 MHz, 25 Watts CW
Output Power
Features
• Qualified Up to a Maximum of 28 VDD Operation
• Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function (1)
• Integrated ESD Protection
• Excellent Thermal Stability
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MW7IC2425NR1
MW7IC2425GNR1
MW7IC2425NBR1
2450 MHz, 25 W CW, 28 V
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 1886 - 01
TO - 270 WB - 16
PLASTIC
MW7IC2425NR1
CASE 1887 - 01
TO - 270 WB - 16 GULL
PLASTIC
MW7IC2425GNR1
CASE 1329 - 09
TO - 272 WB - 16
PLASTIC
MW7IC2425NBR1
VDS1
RFin
RFout/VDS2
VGS1
Quiescent Current
Temperature Compensation (1)
VGS2
VDS1
GND
VDS1
NC
NC
NC
1
2
3
4
5
16
15
GND
NC
RFin
6
14
RFout/VDS2
NC
VGS1
VGS2
VDS1
GND
7
8
9
10
11
13
12
NC
GND
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or AN1987.
© Freescale Semiconductor, Inc., 2009. All rights reserved.
RF Device Data
Freescale Semiconductor
MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1
1
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain - Source Voltage
Rating
VDS
- 0.5, +65
Vdc
Gate - Source Voltage
VGS
- 0.5, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
TC
150
°C
Case Operating Temperature
Operating Junction Temperature
(1,2)
Input Power
TJ
225
°C
Pin
20
dBm
Symbol
Value (2,3)
Unit
Table 2. Thermal Characteristics (In Freescale Narrowband Test Fixture)
Characteristic
Thermal Resistance, Junction to Case
(Case Temperature 80°C, Pout = 25 W CW)
Stage 1, 28 Vdc, IDQ1 = 55 mA
Stage 2, 28 Vdc, IDQ2 = 195 mA
RθJC
°C/W
6.1
1.2
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1B (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
II (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22 - A113, IPC/JEDEC J - STD - 020
Rating
Package Peak Temperature
Unit
3
260
°C
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate - Source Leakage Current
(VGS = 1.5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 20 μAdc)
VGS(th)
1.2
1.9
2.7
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, IDQ1 = 55 mA) (4)
VGS(Q)
—
2.7
—
Vdc
Fixture Gate Quiescent Voltage
(VDD = 28 Vdc, IDQ1 = 55 mAdc) (4,5)
VGG(Q)
10.3
11.2
12.6
Vdc
Stage 1 - Off Characteristics
Stage 1 - On Characteristics
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
4. Measured in Freescale Narrowband Test Fixture.
5. See Appendix A for functional test measurements and test fixture.
(continued)
MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1
2
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate - Source Leakage Current
(VGS = 1.5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 80 μAdc)
VGS(th)
1.2
1.9
2.7
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, IDQ2 = 195 mAdc) (1)
VGS(Q)
—
2.7
—
Vdc
Fixture Gate Quiescent Voltage
(VDD = 28 Vdc, IDQ2 = 195 mAdc) (1,2)
VGG(Q)
9.5
10.5
11.5
Vdc
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 800 mAdc)
VDS(on)
0.15
0.47
0.8
Vdc
Coss
—
111
—
pF
Stage 2 - Off Characteristics
Stage 2 - On Characteristics
Stage 2 - Dynamic Characteristics (3)
Output Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Narrowband Performance Specifications (4) (In Freescale Narrowband Test Fixture,(2) 50 ohm system) VDD = 28 Vdc, IDQ1 = 55 mA,
IDQ2 = 195 mA, Pout = 25 W CW, f = 2450 MHz
Power Gain
Gps
25.5
27.7
30.5
dB
Power Added Efficiency
PAE
41.5
43.8
—
%
Input Return Loss
IRL
—
- 18
- 10
dB
(2)
Functional Tests
(In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 77 mA, IDQ2 = 275 mA, Pout = 4 W Avg., f = 2700 MHz,
WiMAX, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. ACPR
measured in 1 MHz Channel Bandwidth @ ±8.5 MHz Offset.
Power Gain
Gps
25.5
28.5
30.5
dB
Power Added Efficiency
PAE
15
17
—
%
Output Peak - to - Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
1.
2.
3.
4.
PAR
—
9
—
dB
ACPR
—
- 50
- 46
dBc
IRL
—
- 15
- 10
dB
Measured in Freescale Narrowband Test Fixture.
See Appendix A for functional test fixture documentation.
Part internally matched both on input and output.
Measurement made with device in straight lead configuration before any lead forming operation is applied.
MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1
RF Device Data
Freescale Semiconductor
3
VDD1
VD2
B1
28 V
C17
C16
C9
C15
C8
C14
C7
RF
INPUT
1
2
3
4
5
Z1
Z2
Z3
NC
DUT
C13
NC 16
C12
NC 15
NC
NC
NC
Z13
Z4
14
Z5
Z6
Z7
Z8
Z9
Z10
Z11
Z12 Z14
RF
OUTPUT
6
C11
7 NC
8
9
C4
C5
C6
C1
10
11 NC
C10
Quiescent Current
Temperature
Compensation
NC 13
NC 12
VG1
R4
R5
C2
R6
C3
VG2
R1
R2
R3
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
0.500″
0.075″
1.640″
0.100″
0.151″
0.025″
0.100″
0.306″
x 0.027″
x 0.127″
x 0.027″
x 0.042″
x 0.268″
x 0.268″
x 0.056″
x 0.056″
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
x 0.056″ Taper
Microstrip
Microstrip
Z9
Z10
Z11
Z12
Z13*
Z14
PCB
0.040″ x 0.061″ Microstrip
0.020″ x 0.050″ Microstrip
0.050″ x 0.050″ Microstrip
0.050″ x 0.027″ Microstrip
0.338″ x 0.020″ Microstrip
1.551″ x 0.027″ Microstrip
Rogers R04350B, 0.0133″, εr = 3.48
* Line length includes microstrip bends
Figure 3. MW7IC2425NR1(GNR1)(NBR1) Narrowband Test Circuit Schematic
Table 6. MW7IC2425NR1(GNR1)(NBR1) Narrowband Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1
47 Ω, 100 MHz Short Ferrite Bead
2743019447
Fair - Rite
C1, C4, C7, C12, C15
6.8 pF Chip Capacitors
ATC600S6R8CT250XT
ATC
C2, C5, C8, C13
10 nF Chip Capacitors
C0603C103J5RAC
Kemet
C3, C6, C9, C14
1 μF, 50 V Chip Capacitors
GRM32RR71H105KA01B
Murata
C10
2.4 pF Chip Capacitor
ATC600S2R4BT250XT
ATC
C11
3.3 pF Chip Capacitor
ATC600S3R3BT250XT
ATC
C16, C17
10 μF, 50 V Chip Capacitors
GRM55DR61H106KA88B
Murata
R1, R4
12 KΩ, 1/4 W Chip Resistors
CRCW12061202FKEA
Vishay
R2, R3, R5, R6
1 KΩ, 1/4 W Chip Resistors
CRCW12061001FKEA
Vishay
MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1
4
RF Device Data
Freescale Semiconductor
MW7IC2425N
Rev. 1
C9
C8
C7
C4
R4
R5
C5
R6
C1
C2
VG1
C16
C15
C14
C13
CUT OUT AREA
C17
B1
C12
C10
C11
C6
R1
R2
R3
VG2
C3
Figure 4. MW7IC2425NR1(GNR1)(NBR1) Narrowband Test Circuit Component Layout
MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS — NARROWBAND
50
40
28
30
27
20
VDD = 28 Vdc
IDQ1 = 55 mA
IDQ2 = 195 mA
f = 2450 MHz
10
25
1
47
P1dB = 44.5 dBm (28.05 W)
46
45
Actual
44
43
VDD = 28 Vdc, IDQ1 = 55 mA
IDQ2 = 195 mA, f = 2450 MHz
42
0
100
10
P3dB = 44.9 dBm (30.9 W)
41
13
14
15
17
18
19
20
Figure 6. CW Output Power versus Input Power
Figure 5. Power Gain and Power Added Efficiency
versus CW Output Power
Gps, POWER GAIN (dB)
16
Pin, INPUT POWER (dBm)
Pout, OUTPUT POWER (WATTS) CW
30
50
29
40
VD1 = 32 V
28
30
30 V
20
27
28 V
VD2 = 28 Vdc
IDQ1 = 55 mA
IDQ2 = 195 mA
f = 2450 MHz
26
25
0.1
1
10
PAE, POWER ADDED EFFICIENCY (%)
26
Ideal
48
Pout, OUTPUT POWER (dBm)
29
49
PAE, POWER ADDED EFFICIENCY (%)
Gps, POWER GAIN (dB)
30
0
100
10
Pout, OUTPUT POWER (WATTS) CW
Figure 7. Power Gain and Power Added Efficiency
versus CW Output Power as a Function of VD1
50
28 V
29
30 V
40
32 V
28
30
VD2 = 28 V
30 V
27
20
32 V
VD1 = 28 Vdc
IDQ1 = 55 mA
IDQ2 = 195 mA
f = 2450 MHz
26
25
0.1
1
10
10
PAE, POWER ADDED EFFICIENCY (%)
Gps, POWER GAIN (dB)
30
0
100
Pout, OUTPUT POWER (WATTS) CW
Figure 8. Power Gain and Power Added Efficiency
versus CW Output Power as a Function of VD2
MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1
6
RF Device Data
Freescale Semiconductor
Gps, POWER GAIN (dB)
30
50
IDQ1 varied from
45 mA to 65 mA
40
in 5 mA steps
29
IDQ1 = 65 mA
28
30
60 mA
55 mA
27
20
45 mA
50 mA
VDD = 28 Vdc 10
IDQ2 = 195 mA
f = 2450 MHz
0
100
26
25
1
10
PAE, POWER ADDED EFFICIENCY (%)
TYPICAL CHARACTERISTICS — NARROWBAND
Pout, OUTPUT POWER (WATTS) CW
Figure 9. Power Gain and Power Added Efficiency
versus CW Output Power as a Function of IDQ1
50
28
215 mA
195 mA
IDQ2 = 235 mA
40
175 mA
27 155 mA
30
IDQ2 varied from
155 mA to 235 mA
in 20 mA steps
26
20
VDD = 28 Vdc
IDQ1 = 55 mA
f = 2450 MHz
25
1
10
PAE, POWER ADDED EFFICIENCY (%)
Gps, POWER GAIN (dB)
29
10
100
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Power Added Efficiency
versus CW Output Power as a Function of IDQ2
109
MTTF (HOURS)
108
1st Stage
107
2nd Stage
106
105
104
90
110
130
150
170
190
210
230
250
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 28 Vdc, Pout = 25 W CW, and PAE = 43.8%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 11. MTTF versus Junction Temperature
MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1
RF Device Data
Freescale Semiconductor
7
Zo = 50 Ω
Zload
Zsource
f = 2450 MHz
f = 2450 MHz
VDD = 28 Vdc, IDQ1 = 55 mA, IDQ2 = 195 mA, Pout = 25 W CW
f
MHz
Zsource
W
Zload
W
2450
32 - j6.256
6.2 - j1.17
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured from
drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 12. Series Equivalent Source and Load Impedance — Narrowband
MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1
8
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1
RF Device Data
Freescale Semiconductor
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RF Device Data
Freescale Semiconductor
MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1
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Freescale Semiconductor
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MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1
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MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1
RF Device Data
Freescale Semiconductor
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Freescale Semiconductor
MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1
RF Device Data
Freescale Semiconductor
17
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
• AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
• AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family
• AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over - Molded Plastic Packages
• AN3789: Clamping of High Power RF Transistors and RFICs in Over - Molded Plastic Packages
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
0
Mar. 2009
Description
• Initial Release of Data Sheet
MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1
18
RF Device Data
Freescale Semiconductor
APPENDIX A
MW7IC2425NR1/GNR1/NBR1 FUNCTIONAL TEST DATA, FIXTURE AND THERMAL DATA
MW7IC2725N
Rev. 1.3
C16
C17
C15
C9
C8
C7
R5
C1
R6
R1
R2
R3
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
0.500″
0.075″
1.640″
0.100″
0.151″
0.025″
0.050″
0.356″
VG1
C12
C2
C6
C3
CUT OUT AREA
R4
C14
C13
C4
C5
B1
C10
C11
VG2
x 0.027″
x 0.127″
x 0.027″
x 0.042″
x 0.268″
x 0.268″
x 0.056″
x 0.056″
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
x 0.056″ Taper
Microstrip
Microstrip
Z9
Z10
Z11
Z12
Z13*
Z14
PCB
0.040″ x 0.061″ Microstrip
0.020″ x 0.050″ Microstrip
0.050″ x 0.050″ Microstrip
0.050″ x 0.027″ Microstrip
0.338″ x 0.020″ Microstrip
1.551″ x 0.027″ Microstrip
Rogers R04350B, 0.0133″, εr = 3.48
* Line length includes microstrip bends
Figure 1. MW7IC2425NR1(GNR1)(NBR1) Test Circuit Component Layout
Table 1. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 77 mA, IDQ2 = 275 mA, Pout = 4 W Avg., f = 2700 MHz,
WiMAX, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. ACPR
measured in 1 MHz Channel Bandwidth @ ±8.5 MHz Offset.
Power Gain
Gps
25.5
28.5
30.5
dB
Power Added Efficiency
PAE
15
17
—
%
Output Peak - to - Average Ratio @ 0.01% Probability on CCDF
PAR
—
9
—
dB
ACPR
—
- 50
- 46
dBc
IRL
—
- 15
- 10
Adjacent Channel Power Ratio
Input Return Loss
dB
(continued)
MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1
RF Device Data
Freescale Semiconductor
19
APPENDIX A
MW7IC2425NR1/GNR1/NBR1 FUNCTIONAL TEST DATA, FIXTURE AND THERMAL DATA (continued)
Table 1. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Gate Quiescent Voltage
(VDS = 28 Vdc, IDQ1 = 77 mA)
VGS(Q)
—
2.7
—
Vdc
Fixture Gate Quiescent Voltage
(VDD = 28 Vdc, IDQ1 = 77 mAdc, Measured in Functional Test)
VGG(Q)
12.5
15.8
19.5
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, IDQ2 = 275 mAdc)
VGS(Q)
—
2.7
—
Vdc
Fixture Gate Quiescent Voltage
(VDD = 28 Vdc, IDQ2 = 275 mAdc, Measured in Functional Test)
VGG(Q)
11
14
18
Vdc
Stage 1 - On Characteristics
Stage 2 - On Characteristics
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
(Case Temperature 81°C, Pout = 25 W CW)
Symbol
Stage 1, 28 Vdc, IDQ1 = 77 mA
Stage 2, 28 Vdc, IDQ2 = 275 mA
RθJC
Value
5.5
1.3
Unit
°C/W
MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1
20
RF Device Data
Freescale Semiconductor
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could create a situation where personal injury or death may occur. Should Buyer
purchase or use Freescale Semiconductor products for any such unintended or
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and its officers, employees, subsidiaries, affiliates, and distributors harmless against all
claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such
unintended or unauthorized use, even if such claim alleges that Freescale
Semiconductor was negligent regarding the design or manufacture of the part.
Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc.
All other product or service names are the property of their respective owners.
© Freescale Semiconductor, Inc. 2009. All rights reserved.
MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1
Document
Number:
RF
Device
Data MW7IC2425N
Rev. 0, 3/2009
Freescale
Semiconductor
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