Data Sheet

Document Number: MMRF1015N
Rev. 0, 7/2014
Freescale Semiconductor
Technical Data
RF Power LDMOS Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
MMRF1015NR1
MMRF1015GNR1
Designed for Class A or Class AB power amplifier applications with
frequencies up to 2000 MHz. Suitable for analog and digital modulation and
multicarrier amplifier applications.
 Typical Two--Tone Performance at 960 MHz: VDD = 28 Vdc, IDQ = 125 mA,
Pout = 10 W PEP
Power Gain — 18 dB
Drain Efficiency — 32%
IMD — --37 dBc
 Capable of Handling 10:1 VSWR @ 28 Vdc, 960 MHz, 10 W CW Output
Power
Features
1--2000 MHz, 10 W, 28 V
CLASS A/AB
RF POWER MOSFETs
 Characterized with Series Equivalent Large--Signal Impedance Parameters





On--Chip RF Feedback for Broadband Stability
Qualified Up to a Maximum of 32 VDD Operation
Integrated ESD Protection
225C Capable Plastic Package
In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13--inch Reel.
TO--270--2
PLASTIC
MMRF1015NR1
TO--270G--2
PLASTIC
MMRF1015GNR1
1 Drain
Gate 2
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +68
Vdc
Gate--Source Voltage
VGS
--0.5, +12
Vdc
Storage Temperature Range
Tstg
--65 to +150
C
Case Operating Temperature
TC
150
C
Operating Junction Temperature (1,2)
TJ
225
C
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistor.
Figure 1. Pin Connections
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80C, 10 W PEP
Symbol
Value (2,3)
Unit
RJC
2.85
C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
 Freescale Semiconductor, Inc., 2014. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
MMRF1015NR1 MMRF1015GNR1
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
1A
Machine Model (per EIA/JESD22--A115)
A
Charge Device Model (per JESD22--C101)
III
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
Package Peak Temperature
Unit
3
260
C
Table 5. Electrical Characteristics (TA = 25C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
Adc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
Adc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 100 Adc)
VGS(th)
1.5
2.3
3
Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 125 mAdc, Measured in Functional Test)
VGS(Q)
2
3.1
4
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 0.3 Adc)
VDS(on)
0.15
0.27
0.35
Vdc
Reverse Transfer Capacitance
(VDS = 28 Vdc  30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
0.32
—
pF
Output Capacitance
(VDS = 28 Vdc  30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
10
—
pF
Input Capacitance
(VDS = 28 Vdc, VGS = 0 Vdc  30 mV(rms)ac @ 1 MHz)
Ciss
—
23
—
pF
Characteristic
Off Characteristics
On Characteristics
Dynamic Characteristics
Functional Tests (1) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 125 mA, Pout = 10 W PEP, f = 960 MHz, Two--Tone
Test, 100 kHz Tone Spacing
Power Gain
Gps
17.5
18
20.5
dB
Drain Efficiency
D
31
32
—
%
Intermodulation Distortion
IMD
—
--37
--33
dBc
Input Return Loss
IRL
—
--18
--10
dB
Typical Performance (In Freescale 450 MHz Demo Board, 50 hm system) VDD = 28 Vdc, IDQ = 150 mA, Pout = 10 W PEP, 420--470 MHz,
Two--Tone Test, 100 kHz Tone Spacing
Power Gain
Gps
—
20
—
dB
Drain Efficiency
D
—
33
—
%
Intermodulation Distortion
IMD
—
--40
—
dBc
Input Return Loss
IRL
—
--10
—
dB
1. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull wing
(GN) parts.
MMRF1015NR1 MMRF1015GNR1
2
RF Device Data
Freescale Semiconductor, Inc.
C11
B1
VBIAS
+
+
C2
C3
C4
C6
C12
C7
C10
C15
+
+
+
C16
C18
C19
C13
L1
RF
INPUT
DUT
R1
Z1
Z2
Z5
Z6
Z7
Z4
C14
C1
Z1
Z2
Z3
Z4
Z3
C5
C8
VSUPPLY
C17
RF
OUTPUT
C20
C9
Z5
Z6
Z7
PCB
0.073 x 0.223 Microstrip
0.112 x 0.070 Microstrip
0.213 x 0.500 Microstrip
0.313 x 1.503 Microstrip
0.313 x 0.902 Microstrip
0.073 x 1.080 Microstrip
0.073 x 0.314 Microstrip
Rogers ULTRALAM 2000, 0.031, r = 2.55
Figure 2. MMRF1015NR1 Test Circuit Schematic — 900 MHz
Table 6. MMRF1015NR1 Test Circuit Component Designations and Values — 900 MHz
Part
Description
Part Number
Manufacturer
B1
Ferrite Bead
2743019447
Fair--Rite
C1, C6, C11, C20
47 pF Chip Capacitors
ATC100B470JT500XT
ATC
C2, C18, C19
22 F, 35 V Tantalum Capacitors
T491D226K035AT
Kemet
C3, C16
220 F, 63 V Electrolytic Capacitors, Radial
2222--136--68221
Vishay
C4, C15
0.1 F Chip Capacitors
CDR33BX104AKWS
Kemet
C5, C8, C17
0.8--8.0 pF Variable Capacitors, Gigatrim
272915L
Johanson
C7, C12
24 pF Chip Capacitors
ATC100B240JT500XT
ATC
C9, C10, C13
6.8 pF Chip Capacitors
ATC100B6R8JT500XT
ATC
C14
7.5 pF Chip Capacitor
ATC100B7R5JT500XT
ATC
L1
12.5 nH Inductor
A04T--5
Coilcraft
R1
1 k 1/4 W Chip Resistor
CRCW12061001FKEA
Vishay
MMRF1015NR1 MMRF1015GNR1
RF Device Data
Freescale Semiconductor, Inc.
3
C18
C3
C4
C7
C16
C15
C10
C2
B1
C6
C11
C19
C13
C12
L1
R1
C20
C9
C1
C5
C8
C17
C14
Figure 3. MMRF1015NR1 Test Circuit Component Layout — 900 MHz
MMRF1015NR1 MMRF1015GNR1
4
RF Device Data
Freescale Semiconductor, Inc.
--8
48
D
--10
44
40
36
32
--12
IRL
--14
--16
VDD = 28 Vdc, Pout = 10 W (Avg.)
IDQ = 125 mA, 100 kHz Tone Spacing
--18
28
24
--20
IMD
20
--22
Gps
--24
16
910
920
940
930
950
--26
970
960
IMD, INTERMODULATION DISTORTION (dBc)
IRL, INPUT RETURN LOSS (dB)
D, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
TYPICAL CHARACTERISTICS — 900 MHz
f, FREQUENCY (MHz)
Figure 4. Two--Tone Wideband Performance
@ Pout = 10 Watts
20
IMD, INTERMODULATION DISTORTION (dBc)
IDQ = 190 mA
125 mA
18
90 mA
17
VDD = 28 Vdc, f = 945 MHz
Two--Tone Measurements
100 kHz Tone Spacing
16
15
IMD, INTERMODULATION DISTORTION (dBc)
0.1
--15
--20
--25
1
10
5th Order
--30
--40
7th Order
--50
--60
--70
0.1
1
10
100
Pout, OUTPUT POWER (WATTS) AVG.
Figure 5. Two--Tone Power Gain versus
Output Power
Figure 6. Intermodulation Distortion Products
versus Output Power
48
VDD = 28 Vdc, Pout = 10 W (Avg.)
IDQ = 125 mA, Two--Tone Measurements
(f1+f2)/2 = Center Frequency = 945 MHz
Ideal
3rd Order
--35
--40
5th Order
--50
--55
0.1
3rd Order
Pout, OUTPUT POWER (WATTS) AVG.
--30
--45
VDD = 28 Vdc, IDQ = 125 mA
f = 945 MHz, Two--Tone Measurements
100 kHz Tone Spacing
--20
100
Pout, OUTPUT POWER (dBm)
Gps, POWER GAIN (dB)
19
--10
P3dB = 43.14 dBm (20.61 W)
46
P1dB = 42.23 dBm (16.71 W)
44
Actual
42
VDD = 28 Vdc, IDQ = 125 mA
Pulsed CW, 8 sec(on), 1 msec(off)
f = 945 MHz
40
7th Order
38
1
10
100
19
21
23
25
27
29
TWO--TONE SPACING (MHz)
Pin, INPUT POWER (dBm)
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
Figure 8. Pulse CW Output Power versus
Input Power
MMRF1015NR1 MMRF1015GNR1
RF Device Data
Freescale Semiconductor, Inc.
5
50
--10
VDD = 28 Vdc
IDQ = 125 mA
f = 945 MHz
40
--20
30
--30
Gps
20
--40
ACPR (dBc)
D, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
TYPICAL CHARACTERISTICS — 900 MHz
D
10
--50
ACPR
0
0.1
--60
1
10
Pout, OUTPUT POWER (WATTS) AVG.
Figure 9. Single--Carrier CDMA ACPR, Power
Gain and Power Added Efficiency
versus Output Power
Gps, POWER GAIN (dB)
19
18
--30_C
TC = --30_C
50
25_C
85_C
Gps
D
25_C
40
30
85_C
17
20
16
VDD = 28 Vdc 10
IDQ = 125 mA
f = 945 MHz
0
100
15
0.1
1
10
D DRAIN EFFICIENCY (%)
20
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Power Added
Efficiency versus Output Power
24
19
5
20
0
S21
17
16
--5
12
--10
8
--15
16
28 V
VDD = 24 V
15
0
2
4
6
8
10
12
32 V
14
Pout, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain versus Output Power
4
16
0
500
S11
VDD = 28 Vdc
Pout = 10 W CW
IDQ = 125 mA
600
700
S11 (dB)
18
S21 (dB)
Gps, POWER GAIN (dB)
IDQ = 125 mA
f = 945 MHz
--20
--25
800
900
1000
1100
1200
f, FREQUENCY (MHz)
Figure 12. Broadband Frequency Response
MMRF1015NR1 MMRF1015GNR1
6
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
108
MTTF (HOURS)
107
106
105
104
90
110
130
150
170
190
210
230
250
TJ, JUNCTION TEMPERATURE (C)
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 28 Vdc, Pout = 10 W PEP, and D = 32%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 13. MTTF Factor versus Junction Temperature
MMRF1015NR1 MMRF1015GNR1
RF Device Data
Freescale Semiconductor, Inc.
7
Zo = 25 
f = 980 MHz
f = 980 MHz
Zsource
Zload
f = 800 MHz
f = 800 MHz
VDD = 28 Vdc, IDQ = 125 mA, Pout = 10 W PEP
f
MHz
Zsource

Zload

800
3.1 + j1.9
10.1 + j2.3
820
2.8 + j1.7
8.3 + j2.5
840
2.7 + j2.2
8.2 + j3.3
860
3.1 + j3.4
9.8 + j4.8
880
3.3 + j3.8
10.6 + j5.6
900
2.9 + j3.7
9.5 + j5.5
920
2.8 + j4.4
10.1 + j5.9
940
3.0 + j4.7
11.0 + j6.4
960
3.2 + j4.9
11.8 + j6.6
980
3.6 + j5.2
12.1 + j7.1
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 14. Series Equivalent Source and Load Impedance — 900 MHz
MMRF1015NR1 MMRF1015GNR1
8
RF Device Data
Freescale Semiconductor, Inc.
T1
R1
VBIAS
+
C1
R2
B1
B2
R5
C2
R3
VSUPPLY
+
+
C3
C13
C4
C14
C15
T2
R4
R6
DUT
RF
INPUT
Z1
C6
Z1
Z2
Z3
Z4, Z7
L1
C5
Z2
C7
Z3
C8
Z4
Z6
Z7
Z5
C10
C9
Z5
Z6
Z8
PCB
0.540 x 0.080 Microstrip
0.365 x 0.080 Microstrip
0.225 x 0.080 Microstrip
0.440 x 0.080 Microstrip
RF
OUTPUT
Z8
C12
C11
0.475 x 0.330 Microstrip
0.475 x 0.325 Microstrip
1.250 x 0.080 Microstrip
Rogers ULTRALAM 2000, 0.030, r = 2.55
Figure 15. MMRF1015NR1 Test Circuit Schematic — 450 MHz
Table 7. MMRF1015NR1 Test Circuit Component Designations and Values — 450 MHz
Part
Description
Part Number
Manufacturer
B1, B2
Ferrite Bead
2743019447
Fair--Rite
C1
1 F, 35 V Tantalum Capacitor
T491C105K050AT
Kemet
C2, C15
22 F, 35 V Tantalum Capacitors
T491X226K035AT
Kemet
C3, C14
0.1 F Chip Capacitors
C1210C104K5RAC
Kemet
C4, C9, C10, C13
330 pF Chip Capacitors
ATC700A331JT150XT
ATC
C5
4.3 pF Chip Capacitor
ATC100B4R3JT500XT
ATC
C6, C11
0.6--8.0 pF Variable Capacitors
27291SL
Johanson
C7, C8, C12
4.7 pF Chip Capacitors
ATC100B4R7JT500XT
ATC
L1
39 H Chip Inductor
ISC--1210
Vishay
R1
10  Chip Resistor
CRCW080510R0FKEA
Vishay
R2
1 k Chip Resistor
CRCW08051001FKEA
Vishay
R3
1.2 k Chip Resistor
CRCW08051201FKEA
Vishay
R4
2.2 k Chip Resistor
CRCW08052201FKEA
Vishay
R5
5 k Potentiometer
1224W
Bourns
R6
1 k Chip Resistor
CRCW12061001FKEA
Vishay
T1
5 Volt Regulator, Micro 8
LP2951CDMR2G
On Semiconductor
T2
NPN Transistor, SOT--23
BC847ALT1G
On Semiconductor
MMRF1015NR1 MMRF1015GNR1
RF Device Data
Freescale Semiconductor, Inc.
9
R2
R1
R5
T1
B1
C4
B2
R3
T2
R4
C2
C1
C15
C14
C3
C13
C5
C12
C9
C6
C7
R6
L1
C10
C8
C11
Figure 16. MMRF1015NR1 Test Circuit Component Layout — 450 MHz
MMRF1015NR1 MMRF1015GNR1
10
RF Device Data
Freescale Semiconductor, Inc.
20.2
34
Gps
Gps, POWER GAIN (dB)
20
19.8
31
28
D
VDD = 28 Vdc, Pout = 3 W (Avg.), IDQ = 150 mA
2--Carrier W--CDMA, 10 MHz Carrier Spacing,
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
19.6
19.4
19.2
19
25
--40
--45
ACPR
IRL
--50
--55
18.8
18.6
18.4
400
ALT1
--60
410
--65
500
420
430
440
450
460
470
480
490
--6
--9
--12
--15
--18
--21
IRL, INPUT RETURN LOSS (dB)
37
ACPR (dBc), ALT1 (dBc)
20.4
D, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS — 450 MHz
f, FREQUENCY (MHz)
Gps, POWER GAIN (dB)
18.5
18.3
45
D
17.8
17.5
35
--30
--35
ACPR
17.3
--40
IRL
17
16.5
400
40
VDD = 28 Vdc, Pout = 7.5 W (Avg.), IDQ = 150 mA
2--Carrier W--CDMA, 10 MHz Carrier Spacing,
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
18
16.8
50
--45
ALT1
410
--50
420
430
440
450
460
470
480
490
--55
500
--4
--6
--8
--10
--12
--14
IRL, INPUT RETURN LOSS (dB)
55
Gps
ACPR (dBc), ALT1 (dBc)
19
18.8
D, DRAIN
EFFICIENCY (%)
Figure 17. 2--Carrier W--CDMA Broadband Performance @ Pout = 3 Watts Avg.
f, FREQUENCY (MHz)
30
S21
20
--10
VDD = 28 Vdc, IDQ = 150 mA,
f = 450 MHz, N--CDMA IS--95 Pilot,
Sync, Paging, Traffic Codes 8
Through 13
--5
S11
--20
ACPR
--10
S21
15
ALT1
--15
ALT2
10
5
VDD = 28 Vdc
Pout = 10 W
IDQ = 150 mA
--20
--25
50 100 150 200 250 300 350 400 450 500 550 600 650
--30
--40
S11
25
0
--50
--60
--70
--80
0.1
1
10
f, FREQUENCY (MHz)
Pout, OUTPUT POWER (WATTS) AVG.
Figure 19. Broadband Frequency Response
Figure 20. Single--Carrier N--CDMA ACPR, ALT1
and ALT2 versus Output Power
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
ALT1 & ALT2, CHANNEL POWER (dBc)
Figure 18. 2--Carrier W--CDMA Broadband Performance @ Pout = 7.5 Watts Avg.
MMRF1015NR1 MMRF1015GNR1
RF Device Data
Freescale Semiconductor, Inc.
11
Zo = 25 
f = 500 MHz
Zsource
f = 500 MHz
Zload
f = 400 MHz
f = 400 MHz
VDD = 28 Vdc, IDQ = 150 mA, Pout = 10 W PEP
f
MHz
Zsource

Zload

400
9.0 + j3.8
15.0 + j1.4
420
8.8 + j5.4
14.3 + j3.3
440
9.6 + j6.6
15.0 + j4.7
460
10.6 + j9.5
16.3 + j7.3
480
10.7 + j12.6
16.4 + j11.1
500
11.5 + j13.9
16.9 + j12.7
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 21. Series Equivalent Source and Load Impedance — 450 MHz
MMRF1015NR1 MMRF1015GNR1
12
RF Device Data
Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
MMRF1015NR1 MMRF1015GNR1
RF Device Data
Freescale Semiconductor, Inc.
13
MMRF1015NR1 MMRF1015GNR1
14
RF Device Data
Freescale Semiconductor, Inc.
MMRF1015NR1 MMRF1015GNR1
RF Device Data
Freescale Semiconductor, Inc.
15
MMRF1015NR1 MMRF1015GNR1
16
RF Device Data
Freescale Semiconductor, Inc.
MMRF1015NR1 MMRF1015GNR1
RF Device Data
Freescale Semiconductor, Inc.
17
MMRF1015NR1 MMRF1015GNR1
18
RF Device Data
Freescale Semiconductor, Inc.
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following resources to aid your design process.
Application Notes
 AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
 AN1955: Thermal Measurement Methodology of RF Power Amplifiers
 AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages
Engineering Bulletins
 EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
 Electromigration MTTF Calculator
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software
& Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
0
July 2014
Description
 Initial Release of Data Sheet
MMRF1015NR1 MMRF1015GNR1
RF Device Data
Freescale Semiconductor, Inc.
19
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E 2014 Freescale Semiconductor, Inc.
MMRF1015NR1 MMRF1015GNR1
Document Number: MMRF1015N
Rev.
20 0, 7/2014
RF Device Data
Freescale Semiconductor, Inc.