Freescale Semiconductor Technical Data Document Number: MMRF1304L Rev. 0, 12/2013 RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET MMRF1304LR5 RF power transistor suitable for both narrowband and broadband CW or pulse applications operating at frequencies from 1.8 to 2000 MHz, such as military radio communications and radar. This device is fabricated using Freescale’s enhanced ruggedness platform and is suitable for use in applications where high VSWRs are encountered. Typical Performance: VDD = 50 Vdc Frequency (MHz) Signal Type Pout (W) Gps (dB) D (%) IMD (dBc) 1.8--30 (1,3) Two--Tone (10 kHz spacing) 25 PEP 25.0 50.0 --28 30--512 (2,3) Two--Tone (200 kHz spacing) 25 PEP 17.3 32.0 --32 512 (4) Pulse (100 sec, 20% Duty Cycle) 25 Peak 25.9 74.0 — 512 (4) CW 25 26.0 75.0 — 1.8--2000 MHz, 25 W, 50 V WIDEBAND RF POWER LDMOS TRANSISTOR NI--360--2 Load Mismatch/Ruggedness Frequency (MHz) Signal Type VSWR Pin (W) Test Voltage 30 (1) CW >65:1 at all Phase Angles 0.11 (3 dB Overdrive) 50 512 (2) CW 0.95 (3 dB Overdrive) 512 (4) Pulse (100 sec, 20% Duty Cycle) 0.14 Peak (3 dB Overdrive) 512 (4) CW 0.14 (3 dB Overdrive) Result No Device Degradation 2 Drain Gate 1 (Top View) Note: The backside of the package is the source terminal for the transistor. Figure 1. Pin Connections 1. Measured in 1.8--30 MHz broadband reference circuit. 2. Measured in 30--512 MHz broadband reference circuit. 3. The values shown are the minimum measured performance numbers across the indicated frequency range. 4. Measured in 512 MHz narrowband test circuit. Features Wide Operating Frequency Range Extreme Ruggedness Unmatched, Capable of Very Broadband Operation Integrated Stability Enhancements Low Thermal Resistance Extended ESD Protection Circuit In Tape and Reel. R5 Suffix = 50 Units, 32 mm Tape Width, 13--inch Reel. Freescale Semiconductor, Inc., 2013. All rights reserved. RF Device Data Freescale Semiconductor, Inc. MMRF1304LR5 1 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS --0.5, +133 Vdc Gate--Source Voltage VGS --6.0, +10 Vdc Storage Temperature Range Tstg --65 to +150 C Case Operating Temperature Range TC --40 to +150 C (1,2) TJ --40 to +225 C Characteristic Symbol Value (2) Unit Thermal Resistance, Junction to Case CW: Case Temperature 81C, 25 W CW, 50 Vdc, IDQ = 10 mA, 512 MHz RJC 1.4 C/W Thermal Impedance, Junction to Case Pulse: Case Temperature 77C, 25 W Peak, 100 sec Pulse Width, 20% Duty Cycle, 50 Vdc, IDQ = 10 mA, 512 MHz ZJC 0.32 C/W Operating Junction Temperature Range Table 2. Thermal Characteristics Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 2, passes 2000 V Machine Model (per EIA/JESD22--A115) B, passes 200 V Charge Device Model (per JESD22--C101) IV, passes 1200 V Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit IGSS — — 400 nAdc 133 140 — Vdc Off Characteristics Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) Drain--Source Breakdown Voltage (VGS = 0 Vdc, ID = 50 mA) V(BR)DSS Zero Gate Voltage Drain Leakage Current (VDS = 50 Vdc, VGS = 0 Vdc) IDSS — — 2 Adc Zero Gate Voltage Drain Leakage Current (VDS = 100 Vdc, VGS = 0 Vdc) IDSS — — 7 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 85 Adc) VGS(th) 1.5 2.0 2.5 Vdc Gate Quiescent Voltage (VDD = 50 Vdc, ID = 10 mAdc, Measured in Functional Test) VGS(Q) 2.0 2.4 3.0 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 210 mAdc) VDS(on) — 0.23 — Vdc Reverse Transfer Capacitance (VDS = 50 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 0.17 — pF Output Capacitance (VDS = 50 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 14.7 — pF Input Capacitance (VDS = 50 Vdc, VGS = 0 Vdc 30 mV(rms)ac @ 1 MHz) Ciss — 39.0 — pF On Characteristics Dynamic Characteristics 1. Continuous use at maximum temperature will affect MTTF. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. (continued) MMRF1304LR5 2 RF Device Data Freescale Semiconductor, Inc. Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) (continued) Symbol Characteristic Min Typ Max Unit Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 10 mA, Pout = 25 W Peak (5 W Avg.), f = 512 MHz, Pulse, 100 sec Pulse Width, 20% Duty Cycle Power Gain Gps 24.5 25.9 27.5 dB Drain Efficiency D 70.0 74.0 — % Input Return Loss IRL — --16 --10 dB Load Mismatch/Ruggedness (In Freescale Test Fixture, 50 ohm system) IDQ = 150 mA Frequency (MHz) Signal Type VSWR Pin (W) 512 Pulse (100 sec, 20% Duty Cycle) >65:1 at all Phase Angles 0.14 Peak (3 dB Overdrive) CW Test Voltage, VDD Result 50 No Device Degradation 0.14 (3 dB Overdrive) MMRF1304LR5 RF Device Data Freescale Semiconductor, Inc. 3 TYPICAL CHARACTERISTICS 100 Ciss NORMALIZED VGS(Q) C, CAPACITANCE (pF) Coss 10 1 Crss Measured with 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc 0.1 0 10 20 30 40 50 1.07 1.06 IDQ = 10 mA 1.05 50 mA 1.04 1.03 1.02 100 mA 1.01 150 mA 1 0.99 0.98 0.97 0.96 0.95 0.94 0.93 --50 --25 0 VDD = 50 Vdc 25 50 75 100 TC, CASE TEMPERATURE (C) VDS, DRAIN--SOURCE VOLTAGE (VOLTS) Figure 2. Capacitance versus Drain--Source Voltage IDQ (mA) Slope (mV/C) 10 --2.16 50 --1.79 100 --1.76 150 --1.68 Figure 3. Normalized VGS versus Quiescent Current and Case Temperature 108 VDD = 50 Vdc ID = 0.55 Amps MTTF (HOURS) 107 0.69 Amps 106 0.83 Amps 105 104 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (C) Note: MTTF value represents the total cumulative operating time under indicated test conditions. MTTF calculator available at http:/www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. NOTE: For pulse applications or CW conditions, use the MTTF calculator referenced above. Figure 4. MTTF versus Junction Temperature -- CW MMRF1304LR5 4 RF Device Data Freescale Semiconductor, Inc. 512 MHz NARROWBAND PRODUCTION TEST FIXTURE C1 C9 C10 C5 B1 C2 L3 C4 L1 C8 C6 C7 C14 C12 CUT OUT AREA C3 B2 L2 C13 C11 C15 MRFE6VS25L Rev. 3 Figure 5. MMRF1304LR5 Narrowband Test Circuit Component Layout — 512 MHz Table 5. MMRF1304LR5 Narrowband Test Circuit Component Designations and Values — 512 MHz Part Description Part Number Manufacturer B1, B2 Long Ferrite Beads 2743021447 Fair-Rite C1 22 F, 35 V Tantalum Capacitor T491X226K035AT Kemet C2, C9 0.1 F Chip Capacitors CDR33BX104AKWS AVX C3, C10 0.01 F Chip Capacitors C0805C103K5RAC Kemet C4, C12, C15 180 pF Chip Capacitors ATC100B181JT500XT ATC C5 18 pF Chip Capacitor ATC100B180JT500XT ATC C6 2.7 pF Chip Capacitor ATC100B2R7BT500XT ATC C7 15 pF Chip Capacitor ATC100B150JT500XT ATC C8 36 pF Chip Capacitor ATC100B360JT500XT ATC C11 4.3 pF Chip Capacitor ATC100B4R3CT500XT ATC C13 13 pF Chip Capacitor ATC100B130JT500XT ATC C14 470 F, 63 V Electrolytic Capacitor MCGPR63V477M13X26-RH Multicomp L1 33 nH Inductor 1812SMS-33NJLC Coilcraft L2 12.5 nH Inductor A04TJLC Coilcraft L3 82 nH Inductor 1812SMS-82NJLC Coilcraft PCB 0.030, r = 2.55 AD255A Arlon MMRF1304LR5 RF Device Data Freescale Semiconductor, Inc. 5 L3 B1 VBIAS C9 C2 C3 VSUPPLY + C12 + C1 B2 C4 C10 C14 L2 L1 RF INPUT Z11 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z12 Z13 Z14 Z15 Z16 C6 C7 C8 Z19 C15 Z10 C11 C5 Z17 Z18 RF OUTPUT C13 DUT Figure 6. MMRF1304LR5 Narrowband Test Circuit Schematic — 512 MHz Table 6. MMRF1304LR5 Narrowband Test Circuit Microstrips — 512 MHz Microstrip Description Microstrip Description Z1 0.235 0.082 Microstrip Z11 0.475 0.270 Microstrip Z2 0.042 0.082 Microstrip Z12 0.091 0.082 Microstrip Z3 0.682 0.082 Microstrip Z13 0.170 0.082 Microstrip Z4* 0.200 0.060 Microstrip Z14* 0.670 0.082 Microstrip Z5 0.324 0.060 Microstrip Z15 0.280 0.082 Microstrip Z6* 0.200 0.060 Microstrip Z16* 0.413 0.082 Microstrip Z7 0.089 0.082 Microstrip Z17* 0.259 0.082 Microstrip Z8 0.120 0.082 Microstrip Z18 0.761 0.082 Microstrip Z9 0.411 0.082 Microstrip Z19 0.341 0.082 Microstrip Z10 0.260 0.270 Microstrip * Line length includes microstrip bends MMRF1304LR5 6 RF Device Data Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS — 512 MHz Pout, OUTPUT POWER (WATTS) 32 VDD = 50 Vdc, f = 512 MHz 28 24 20 Pin = 0.035 W Pin = 0.07 W 16 12 8 4 0 0.5 0 1.5 1 2.5 2 3 3.5 VGS, GATE--SOURCE VOLTAGE (VOLTS) Figure 7. CW Output Power versus Gate--Source Voltage at a Constant Input Power 30 VDD = 50 Vdc IDQ = 10 mA f = 512 MHz 42 29 Gps, POWER GAIN (dB) Pout, OUTPUT POWER (dBm) 44 VDD = 50 Vdc, f = 512 MHz 40 38 36 34 10 mA IDQ = 150 mA 28 90 50 mA 80 D 70 100 mA 100 mA Gps 27 60 150 mA 50 mA 26 50 10 mA 25 40 30 24 32 10 12 14 18 16 20 23 22 D, DRAIN EFFICIENCY (%) 46 2 20 50 10 Pout, OUTPUT POWER (WATTS) Pin, INPUT POWER (dBm) f (MHz) P1dB (W) P3dB (W) 512 28.7 31.6 Figure 9. Power Gain and Drain Efficiency versus CW Output Power and Quescient Current Figure 8. CW Output Power versus Input Power 90 Gps, POWER GAIN (dB) 28 27 D --40_C 26 25 TC = --40_C 24 Gps 60 50 40 25_C 23 80 25_C 70 85_C 30 85_C 20 22 21 1 10 28 27 10 50 26 Gps, POWER GAIN (dB) VDD = 50 Vdc IDQ = 10 mA f = 512 MHz D, DRAIN EFFICIENCY (%) 29 25 24 23 22 21 20 50 V 45 V 40 V 35 V 30 V 19 IDQ = 10 mA, f = 512 MHz Pulse Width = 100 sec 20% Duty Cycle 25 V 18 17 VDD = 20 V 16 0 5 10 15 20 25 30 Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS) PEAK Figure 10. Power Gain and Drain Efficiency versus CW Output Power Figure 11. Power Gain versus Output Power and Drain--Source Voltage 35 MMRF1304LR5 RF Device Data Freescale Semiconductor, Inc. 7 512 MHz NARROWBAND PRODUCTION TEST FIXTURE VDD = 50 Vdc, IDQ = 10 mA, Pout = 25 W Peak f MHz Zsource Zload 512 0.72 + j10.8 8.8 + j17.5 Zsource = Test circuit impedance as measured from gate to ground. Zload 50 Input Matching Network = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Zsource 50 Zload Figure 12. Narrowband Series Equivalent Source and Load Impedance — 512 MHz MMRF1304LR5 8 RF Device Data Freescale Semiconductor, Inc. PACKAGE DIMENSIONS MMRF1304LR5 RF Device Data Freescale Semiconductor, Inc. 9 MMRF1304LR5 10 RF Device Data Freescale Semiconductor, Inc. PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 Dec. 2013 Description Initial Release of Data Sheet MMRF1304LR5 RF Device Data Freescale Semiconductor, Inc. 11 How to Reach Us: Home Page: freescale.com Web Support: freescale.com/support Information in this document is provided solely to enable system and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. Freescale reserves the right to make changes without further notice to any products herein. Freescale makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including “typicals,” must be validated for each customer application by customer’s technical experts. Freescale does not convey any license under its patent rights nor the rights of others. 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