Freescale Semiconductor Technical Data Document Number: MMRF1304N Rev. 0, 12/2013 RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs RF power transistors suitable for both narrowband and broadband CW or pulse applications operating at frequencies from 1.8 to 2000 MHz, such as military radio communications and radar. These devices are fabricated using Freescale’s enhanced ruggedness platform and are suitable for use in applications where high VSWRs are encountered. Typical Performance: VDD = 50 Vdc Frequency (MHz) Signal Type Pout (W) Gps (dB) D (%) IMD (1) (dBc) 1.8 to 30 (2,6) Two--Tone (10 kHz spacing) 25 PEP 25 51 --30 30--512 (3,6) Two--Tone (200 kHz spacing) 25 PEP 17.1 30.1 --32 512 (4) Pulse (100 sec, 20% Duty Cycle) 25 Peak 25.4 74.5 — 512 (4) CW 25 25.5 74.7 — CW 25 22.5 60 — 1030 (5) MMRF1304NR1 MMRF1304GNR1 1.8--2000 MHz, 25 W, 50 V WIDEBAND RF POWER LDMOS TRANSISTORS TO--270--2 PLASTIC MMRF1304NR1 Load Mismatch/Ruggedness Frequency (MHz) Signal Type VSWR Pin (W) Test Voltage 30 (2) CW >65:1 at all Phase Angles 0.23 (3 dB Overdrive) 50 512 (3) CW 1.6 (3 dB Overdrive) 512 (4) Pulse (100 sec, 20% Duty Cycle) 0.14 Peak (3 dB Overdrive) 512 (4) CW 0.14 (3 dB Overdrive 1030 (5) CW 0.34 (3 dB Overdrive 1. 2. 3. 4. 5. 6. TO--270G--2 PLASTIC MMRF1304GNR1 Result No Device Degradation Distortion products are referenced to one of two tones. Measured in 1.8--30 MHz broadband reference circuit. Measured in 30--512 MHz broadband reference circuit. Measured in 512 MHz narrowband test circuit. Measured in 1030 MHz narrowband test circuit. The values shown are the minimum measured performance numbers across the indicated frequency range. Gate 2 1 Drain (Top View) Note: The backside of the package is the source terminal for the transistor. Figure 1. Pin Connections Features Wide Operating Frequency Range Extreme Ruggedness Unmatched, Capable of Very Broadband Operation Integrated Stability Enhancements Low Thermal Resistance Extended ESD Protection Circuit In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13--inch Reel. Freescale Semiconductor, Inc., 2013. All rights reserved. RF Device Data Freescale Semiconductor, Inc. MMRF1304NR1 MMRF1304GNR1 1 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS --0.5, +133 Vdc Gate--Source Voltage VGS --6.0, +10 Vdc Storage Temperature Range Tstg --65 to +150 C Case Operating Temperature TC --40 to +150 C Operating Junction Temperature (1) TJ --40 to +225 C Symbol Value (2) Unit Thermal Resistance, Junction to Case CW: Case Temperature 80C, 25 W CW, 50 Vdc, IDQ = 10 mA, 512 MHz RJC 1.2 C/W Thermal Impedance, Junction to Case Pulse: Case Temperature 77C, 25 W Peak, 100 sec Pulse Width, 20% Duty Cycle, 50 Vdc, IDQ = 10 mA, 512 MHz ZJC 0.29 C/W Table 2. Thermal Characteristics Characteristic Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 2, passes 2500 V Machine Model (per EIA/JESD22--A115) B, passes 250 V Charge Device Model (per JESD22--C101) IV, passes 2000 V Table 4. Moisture Sensitivity Level Test Methodology Per JESD22--A113, IPC/JEDEC J--STD--020 Rating Package Peak Temperature Unit 3 260 C Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit IGSS — — 400 nAdc 133 142 — Vdc Off Characteristics Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) Drain--Source Breakdown Voltage (VGS = 0 Vdc, ID = 50 mA) V(BR)DSS Zero Gate Voltage Drain Leakage Current (VDS = 50 Vdc, VGS = 0 Vdc) IDSS — — 2 Adc Zero Gate Voltage Drain Leakage Current (VDS = 100 Vdc, VGS = 0 Vdc) IDSS — — 7 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 85 Adc) VGS(th) 1.5 2.0 2.5 Vdc Gate Quiescent Voltage (VDD = 50 Vdc, ID = 10 mAdc, Measured in Functional Test) VGS(Q) 2.0 2.4 3.0 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 210 mAdc) VDS(on) — 0.28 — Vdc Reverse Transfer Capacitance (VDS = 50 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 0.26 — pF Output Capacitance (VDS = 50 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 14.2 — pF Input Capacitance (VDS = 50 Vdc, VGS = 0 Vdc 30 mV(rms)ac @ 1 MHz) Ciss — 39.2 — pF On Characteristics Dynamic Characteristics 1. Continuous use at maximum temperature will affect MTTF. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. (continued) MMRF1304NR1 MMRF1304GNR1 2 RF Device Data Freescale Semiconductor, Inc. Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Functional Tests (1) (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 10 mA, Pout = 25 W Peak (5 W Avg.), f = 512 MHz, 100 sec Pulse Width, 20% Duty Cycle Gps 24.0 25.4 Drain Efficiency D 70.0 74.5 — % Input Return Loss IRL — --16 --10 dB Power Gain 27.0 dB Load Mismatch/Ruggedness (In Freescale Test Fixture, 50 ohm system) IDQ = 10 mA Frequency (MHz) Signal Type VSWR Pin (W) 512 Pulse (100 sec, 20% Duty Cycle) >65:1 at all Phase Angles 0.14 Peak (3 dB Overdrive) CW Test Voltage, VDD Result 50 No Device Degradation 0.14 (3 dB Overdrive) 1. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull wing (GN) parts. MMRF1304NR1 MMRF1304GNR1 RF Device Data Freescale Semiconductor, Inc. 3 TYPICAL CHARACTERISTICS 1.06 100 Ciss IDQ = 10 mA 1.04 NORMALIZED VGS(Q) C, CAPACITANCE (pF) Coss 10 1 VDD = 50 Vdc 1.02 1 100 mA 0.98 150 mA Crss 0.96 Measured with 30 mV(rms)ac @ 1 MHz VGS = 0 Vdc 0.1 0 10 20 30 40 0.94 --40 60 50 50 mA --20 0 20 40 60 80 100 VDS, DRAIN--SOURCE VOLTAGE (VOLTS) TC, CASE TEMPERATURE (C) Figure 2. Capacitance versus Drain--Source Voltage Figure 3. Normalized VGS and Quiescent Current versus Case Temperature IDQ (mA) Slope (mV/C) 10 --2.160 50 --1.790 100 --1.760 150 --1.680 108 VDD = 50 Vdc ID = 0.6 Amps MTTF (HOURS) 107 0.7 Amps 106 0.9 Amps 105 104 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (C) Note: MTTF value represents the total cumulative operating time under indicated test conditions. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 4. MTTF versus Junction Temperature -- CW MMRF1304NR1 MMRF1304GNR1 4 RF Device Data Freescale Semiconductor, Inc. 512 MHz NARROWBAND PRODUCTION TEST FIXTURE C1 C13 B2 C14 B1 C2 C3 L3 C4 C5* L1 C7 L2 C8 CUT OUT AREA C6 C15 C12 C10* C11 C9* *C5, C9 and C10 are mounted vertically. Figure 5. MMRF1304NR1 Narrowband Test Circuit Component Layout — 512 MHz Table 6. MMRF1304NR1 Narrowband Test Circuit Component Designations and Values — 512 MHz Part Description Part Number Manufacturer B1, B2 Long Ferrite Beads 2743021447 Fair-Rite C1 22 F, 35 V Tantalum Capacitor T491X226K035AT Kemet C2, C13 0.1 F Chip Capacitors CDR33BX104AKWY AVX C3, C14 0.01 F Chip Capacitors C0805C103K5RAC Kemet C4, C11, C12 180 pF Chip Capacitors ATC100B181JT300XT ATC C5 18 pF Chip Capacitor ATC100B180JT500XT ATC C6 2.7 pF Chip Capacitor ATC100B2R7BT500XT ATC C7 15 pF Chip Capacitor ATC100B150JT500XT ATC C8 36 pF Chip Capacitor ATC100B360JT500XT ATC C9 4.3 pF Chip Capacitor ATC100B4R3CT500XT ATC C10 13 pF Chip Capacitor ATC100B130JT500XT ATC C15 470 F, 63 V Electrolytic Capacitor MCGPR63V477M13X26-RH Multicomp L1 33 nH Inductor 1812SMS-33NJLC Coilcraft L2 12.5 nH Inductor A04TJLC Coilcraft L3 82 nH Inductor 1812SMS-82NJLC Coilcraft PCB 0.030, r = 2.55 AD255A Arlon MMRF1304NR1 MMRF1304GNR1 RF Device Data Freescale Semiconductor, Inc. 5 L3 B2 B1 VBIAS C12 + C1 C2 C3 C4 C13 C14 C15 L2 L1 RF INPUT Z11 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z12 Z13 Z14 Z15 Z16 C5 C7 C8 Z17 Z18 Z19 RF OUTPUT C11 Z10 C9 C6 VSUPPLY + C10 DUT Figure 6. MMRF1304NR1 Narrowband Test Circuit Schematic — 512 MHz Table 7. MMRF1304NR1 Narrowband Test Circuit Microstrips — 512 MHz Microstrip Description Microstrip Description Z1 0.235 0.082 Microstrip Z11 0.475 0.270 Microstrip Z2 0.042 0.082 Microstrip Z12 0.091 0.082 Microstrip Z3 0.682 0.082 Microstrip Z13 0.170 0.082 Microstrip Z4* 0.200 0.060 Microstrip Z14* 0.670 0.082 Microstrip Z5 0.324 0.060 Microstrip Z15 0.280 0.082 Microstrip Z6* 0.200 0.060 Microstrip Z16* 0.413 0.082 Microstrip Z7 0.067 0.082 Microstrip Z17* 0.259 0.082 Microstrip Z8 0.142 0.082 Microstrip Z18 0.761 0.082 Microstrip Z9 0.481 0.082 Microstrip Z19 0.341 0.082 Microstrip Z10 0.190 0.270 Microstrip * Line length includes microstrip bends MMRF1304NR1 MMRF1304GNR1 6 RF Device Data Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS — 512 MHz 50 VDD = 50 Vdc Pin = 0.07 W f = 512 MHz 30 25 20 15 10 5 0 0 1 VDD = 50 Vdc IDQ = 10 mA f = 512 MHz 45 Pout, OUTPUT POWER (dBm) Pout, OUTPUT POWER (WATTS) 35 2 3 40 35 30 25 20 15 4 0 5 VGS, GATE--SOURCE VOLTAGE (VOLTS) 10 15 20 25 Pin, INPUT POWER (dBm) Figure 7. CW Output Power versus Gate--Source Voltage at a Constant Input Power f (MHz) P1dB (W) P3dB (W) 512 27.8 31.4 Figure 8. CW Output Power versus Input Power 27 25 80 25_C Gps 24 60 23 22 21 85_C TC = --30_C D 30 20 20 19 0.3 50 40 85_C 25_C 70 D, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 26 90 --30_C VDD = 50 Vdc IDQ = 10 mA f = 512 MHz 10 1 10 50 Pout, OUTPUT POWER (WATTS) Figure 9. Power Gain and Drain Efficiency versus CW Output Power MMRF1304NR1 MMRF1304GNR1 RF Device Data Freescale Semiconductor, Inc. 7 512 MHz NARROWBAND PRODUCTION TEST FIXTURE VDD = 50 Vdc, IDQ = 10 mA, Pout = 25 W Peak f MHz Zsource Zload 512 1.56 + j11.6 9.5 + j18.3 Zsource = Test circuit impedance as measured from gate to ground. Zload 50 Input Matching Network = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Zsource 50 Zload Figure 10. Narrowband Series Equivalent Source and Load Impedance — 512 MHz MMRF1304NR1 MMRF1304GNR1 8 RF Device Data Freescale Semiconductor, Inc. PACKAGE DIMENSIONS MMRF1304NR1 MMRF1304GNR1 RF Device Data Freescale Semiconductor, Inc. 9 MMRF1304NR1 MMRF1304GNR1 10 RF Device Data Freescale Semiconductor, Inc. MMRF1304NR1 MMRF1304GNR1 RF Device Data Freescale Semiconductor, Inc. 11 MMRF1304NR1 MMRF1304GNR1 12 RF Device Data Freescale Semiconductor, Inc. MMRF1304NR1 MMRF1304GNR1 RF Device Data Freescale Semiconductor, Inc. 13 MMRF1304NR1 MMRF1304GNR1 14 RF Device Data Freescale Semiconductor, Inc. PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes AN1907: Solder Reflow Attach Method for High Power RF Devices in Over--Molded Plastic Packages AN1955: Thermal Measurement Methodology of RF Power Amplifiers AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over--Molded Plastic Packages AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages Engineering Bulletins EB212: Using Data Sheet Impedances for RF LDMOS Devices EB38: Measuring the Intermodulation Distortion of Linear Amplifiers REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 Dec. 2013 Description Initial Release of Data Sheet MMRF1304NR1 MMRF1304GNR1 RF Device Data Freescale Semiconductor, Inc. 15 How to Reach Us: Home Page: freescale.com Web Support: freescale.com/support Information in this document is provided solely to enable system and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. Freescale reserves the right to make changes without further notice to any products herein. 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U.S. Pat. & Tm. Off. All other product or service names are the property of their respective owners. E 2013 Freescale Semiconductor, Inc. MMRF1304NR1 MMRF1304GNR1 Document Number: MMRF1304N Rev. 16 0, 12/2013 RF Device Data Freescale Semiconductor, Inc.