SM8S Series New Product Vishay Semiconductors formerly General Semiconductor Surface Mount Automotive Transient Voltage Suppressors d* e t n e t d Pa e d n ange e t Ex e R g a t l Vo Stand-off Voltage 10 to 43V Peak Pulse Power 6600W (10/1000µs) 5200W (10/10,000µs) DO-218AB 0.628(16.0) 0.592(15.0) 0.539(13.7) 0.524(13.3) 0.116(3.0) 0.093(2.4) Mounting Pad Layout 0.413(10.5) 0.342(8.7) 0.374(9.5) 0.327(8.3) 0.366(9.3) 0.343(8.7) 0.406(10.3) 0.382(9.7) Dimensions in inches and (millimeters) LEAD 1 0.197(5.0) 0.185(4.7) 0.091(2.3) 0.067(1.7) 0.116(3.0) 0.093(2.4) 0.413(10.5) 0.374(9.5) 0.138(3.5) 0.098(2.5) 0.366(9.3) 0.343(8.7) 0.150(3.8) 0.126(3.2) 0.606(15.4) 0.583(14.8) 0.016 (0.4) Min. LEAD 2/METAL HEATSINK 0.028(0.7) 0.020(0.5) *Patent #’s: 0.098(2.5) 0.059(1.5) 4,980,315 5,166,769 5,278,095 Features Mechanical Data • Ideally suited for load dump protection • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • High temperature stability due to unique oxide passivation and patented PAR® construction • Integrally molded heatsink provides a very low thermal resistance for maximum heat dissipation • Low leakage current at TJ = 175°C • High temperature soldering guaranteed: 260°C for 10 seconds at terminals • Meets ISO7637-2 surge spec. • Low forward voltage drop Case: Molded plastic body, surface mount with heatsink integrally mounted in the encapsulation Terminals: Plated, solderable per MIL-STD-750, Method 2026 Polarity: Heatsink is anode Mounting Position: Any Weight: 0.091 oz., 2.58 g Packaging codes/options: 2D/750 per 13" Reel (16mm Tape), anode towards sprocket hole, 4.5K/box 2E/750 per 13" Reel (16mm Tape), cathode towards sprocket hole, 4.5K/box Maximum Ratings and Thermal Characteristics (TC = 25°C unless otherwise noted) Parameter Symbol Value Unit PPPM 6600 5200 W PD 8.0 W Peak pulse current with a 10/1000µs waveform IPPM See Table 1 A Peak forward surge current, 8.3ms single half sine-wave IFSM 700 A Typical thermal resistance junction to case RθJC 0.90 °C/W TJ, TSTG -55 to +175 °C Peak pulse power dissipation with 10/1000µs waveform 10/10,000µs waveform Steady state power dissipation (1) Operating junction and storage temperature range Notes: (1) Non-repetitive current pulse derated above TA=25°C Document Number 88387 04-Jun-04 www.vishay.com 1 SM8S Series Vishay Semiconductors formerly General Semiconductor Electrical Characteristics (TC = 25°C unless otherwise noted) Device Type SM8S10 SM8S10A SM8S11 SM8S11A SM8S12 SM8S12A SM8S13 SM8S13A SM8S14 SM8S14A SM8S15 SM8S15A SM8S16 SM8S16A SM8S17 SM8S17A SM8S18 SM8S18A SM8S20 SM8S20A SM8S22 SM8S22A SM8S24 SM8S24A SM8S26 SM8S26A SM8S28 SM8S28A SM8S30 SM8S30A SM8S33 SM8S33A SM8S36 SM8S36A SM8S40 SM8S40A SM8S43 SM8S43A Breakdown Voltage V(BR) (V) Test Current IT Stand-off Voltage VWM Maximum Reverse Leakage at VWM ID Maximum Max. Peak Maximum Reverse Pulse Clamping Leakage Current Voltage at at VWM at 10/1000µs IPPM Tc = 175oC Waveform VC Min. Max. (mA) (V) (µA) ID(µA) (A) (V) 11.1 11.1 12.2 12.2 13.3 13.3 14.4 14.4 15.6 15.6 16.7 16.7 17.8 17.8 18.9 18.9 20.0 20.0 22.2 22.2 24.4 24.4 26.7 26.7 28.9 28.9 31.1 31.1 33.3 33.3 36.7 36.7 40.0 40.0 44.4 44.4 47.8 47.8 13.6 12.3 14.9 13.5 16.3 14.7 17.6 15.9 19.1 17.2 20.4 18.5 21.8 19.7 23.1 20.9 24.4 22.1 27.1 24.5 29.8 26.9 32.6 29.5 35.3 31.9 38.0 34.4 40.7 36.8 44.9 40.6 48.9 44.2 54.3 49.1 58.4 52.8 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 10 10 11 11 12 12 13 13 14 14 15 15 16 16 17 17 18 18 20 20 22 22 24 24 26 26 28 28 30 30 33 33 36 36 40 40 43 43 15 15 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 250 250 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 351 388 328 363 300 332 277 307 256 284 245 270 229 254 216 239 205 226 184 204 168 186 153 170 142 157 132 145 123 136 112 124 103 114 92.4 102 86.0 95.1 18.8 17.0 20.1 18.2 22.0 19.9 23.8 21.5 25.8 23.2 26.9 24.4 28.8 26.0 30.5 27.6 32.2 29.2 35.8 32.4 39.4 35.5 43.0 38.9 46.6 42.1 50.1 45.4 53.5 48.4 59.0 53.3 64.3 58.1 71.4 64.5 76.7 69.4 Note: For all types maximum VF = 1.8V at IF = 100A measured on 8.3ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum www.vishay.com 2 Document Number 88387 04-Jun-04 SM8S Series Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25°C unless otherwise noted) Load Dump Power Characteristics (10ms Exponential Waveform) Power Derating Curve 6,000 8.0 Load Dump Power (W) Power Dissipation (W) 5,000 6.0 4.0 2.0 4,000 3,000 2,000 1,000 0 0 50 0 150 100 200 25 75 100 150 125 175 Case Temperature (°C) Case Temperature (°C) Pulse Waveform Reverse Power Capability 10,000 150 tr = 10µs Peak Value IPP 100 TA = 25°C Pulse width (td) is defined as the point where the peak current decays to 50% of IPP Half Value – 50 Reverse Surge Power (W) Input Peak Pulse Current % 50 IPP 2 td 0 0 1,000 10 30 20 40 100 10 Pulse Width (ms) – 1/2 IPP Exponential Waveform Time, ms (t) Typical Transient Thermal Impedance Transient Thermal Impedance (°C/W) 100 RΘJA 10 RΘJC 1 0.1 0.01 0.01 0.1 1 10 100 t – Pulse Width (sec.) Document Number 88387 04-Jun-04 www.vishay.com 3