MCH3377 D

Ordering number : ENA0957B
MCH3377
P-Channel Power MOSFET
–20V, –3A, 83mΩ, Single MCPH3
http://onsemi.com
Features
• Ultrahigh-spees switching.
• Halogen free compliance
•
•
1.8V drive
Protection diode in
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
--20
Gate-to-Source Voltage
VGSS
±10
V
V
Drain Current (DC)
ID
--3
A
Drain Current (Pulse)
IDP
PW≤10μs, duty cycle≤1%
Allowable Power Dissipation
PD
When mounted on ceramic substrate (900mm2×0.8mm)
--12
A
1
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Package Dimensions
Product & Package Information
unit : mm (typ)
7019A-003
• Package
: MCPH3
• JEITA, JEDEC
: SC-70, SOT-323
• Minimum Packing Quantity : 3,000 pcs./reel
MCH3377-TL-E
MCH3377-TL-H
MCH3377-TL-W
0.15
0.25
2.0
1.6
0 to 0.02
QJ
LOT No.
2.1
Marking
LOT No.
3
Packing Type : TL
TL
0.65
2
Electrical Connection
0.3
3
0.07
0.85
0.25
1
1 : Gate
2 : Source
3 : Drain
1
MCPH3
2
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
Semiconductor Components Industries, LLC, 2014
March, 2014
32514HK TC-00002897/60612TKIM/N1407TIIM PE No. A0957-1/5
MCH3377
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Zero-Gate Voltage Drain Current
Drain-to-Source Breakdown Voltage
V(BR)DSS
IDSS
Gate-to-Source Leakage Current
Cutoff Voltage
Conditions
Ratings
min
--20
IGSS
ID=--1mA, VGS=0V
VDS=--20V, VGS=0V
VGS=±8V, VDS=0V
VGS(off)
VDS=--10V, ID=--1mA
--0.4
Forward Transfer Admittance
| yfs |
VDS=--10V, ID=--1.5A
2.2
Static Drain-to-Source On-State Resistance
RDS(on)1
RDS(on)2
ID=--1.5A, VGS=--4.5V
ID=--1A, VGS=--2.5V
RDS(on)3
ID=--0.2A, VGS=--1.8V
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
typ
Unit
max
V
--1
mA
±10
mA
--1.3
3.8
V
S
63
83
88
125
130
200
mW
mW
mW
375
pF
77
pF
Crss
58
pF
td(on)
tr
8.1
ns
26
ns
42
ns
Fall Time
td(off)
tf
Total Gate Charge
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
VDS=--10V, f=1MHz
See specified Test Circuit.
VDS=--10V, VGS=--4.5V, ID=--3A
37
ns
4.6
nC
0.8
nC
1.3
IS=--3A, VGS=0V
--0.83
nC
--1.2
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Switching Time Test Circuit
0V
--4V
VDD= --10V
VIN
ID= --1.5A
RL=6.67Ω
VIN
VOUT
D
PW=10μs
D.C.≤1%
G
P.G
50Ω
MCH3377
S
Ordering Information
Device
Package
Shipping
MCH3377-TL-E
MCH3377-TL-H
MCH3377-TL-W
memo
Pb-Free
MCPH3
3,000pcs./reel
Pb-Free and Halogen Free
Pb-Free and Halogen Free
No. A0957-2/5
MCH3377
ID -- VDS
8V
--0.2
--0.3
--0.6
--0.7
--0.8
--0.9
Drain-to-Source Voltage, VDS -- V
RDS(on) -- VGS
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
--1.0A
--1.5A
50
0
--1
--2
--3
--4
--5
--6
--7
Gate-to-Source Voltage, VGS -- V
yfs -- ID
IT13010
2
=
Ta
1.0
°C
25
--
75
°C
°C
25
7
5
2
0.1
--0.01
2
3
5 7 --0.1
2
3
5 7 --1.0
2
Drain Current, ID -- A
SW Time -- ID
2
3
5 7 --10
IT13012
7
5
td (off)
tf
3
2
tr
td(on)
10
7
2
3
5
7
--1.0
--2.5
IT13009
50
--40
--20
0
20
40
60
80
100
Ambient Temperature, Ta -- °C
120
IS -- VSD
140
160
IT13011
VGS=0V
--1.0
7
5
3
2
--0.1
7
5
3
2
0
--0.2
--0.4
--0.6
--0.8
--1.0
Diode Forward Voltage, VSD -- V
Ciss, Coss, Crss -- VDS
1000
7
5
100
5
--0.1
100
--0.001
VDD= --10V
VGS= --4V
--2.0
2A
= --0.
8V, I D
.
1
-=
VGS
--1.0A
, I D=
V
.5
2
-V GS=
--1.5A
V, I D=
.5
4
-V GS=
150
--0.01
7
5
3
2
3
--1.5
200
--10
7
5
3
2
5
3
--1.0
Gate-to-Source Voltage, VGS -- V
RDS(on) -- Ta
0
--60
--8
VDS= --10V
7
--0.5
250
Ta=25°C
200
100
0
IT13008
250
ID= --0.2A
0
--1.0
Source Current, IS -- A
Forward Transfer Admittance, yfs -- S
--0.5
Ciss, Coss, Crss -- pF
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
--0.4
°C
25°C
--25°
C
--0.1
Ta=7
5
0
10
Switching Time, SW Time -- ns
25°C
VGS= --1.0V
300
0
--2
--1
--0.5
150
°C
--25°
C
--1.0
--3
Ta=7
5
Drain Current, ID -- A
--3.
0V
--1.5V
--1.5
0
VDS= --10V
--1
.
--4.5V
--2.0
ID -- VGS
--5
--4
--8.0V
--2.5
Drain Current, ID -- A
--2.
5V
--3.0
--1.2
IT13013
f=1MHz
Ciss
3
2
100
Coss
Crss
7
5
3
2
Drain Current, ID -- A
3
5
7
--10
IT13014
2
0
--2
--4
--6
--8
--10
--12
--14
--16
Drain-to-Source Voltage, VDS -- V
--18
--20
IT13015
No. A0957-3/5
MCH3377
VGS -- Qg
VDS= --10V
ID= --3A
--4.0
--3.5
--3.0
--2.5
--2.0
--1.5
--1.0
0
1
2
3
4
Total Gate Charge, Qg -- nC
5
IT13016
PD -- Ta
1.2
1.0
M
ou
0.8
nt
ed
on
0.6
ac
er
am
ic
0.4
bo
ar
d
(9
3
2
m
m2
�
0.
0
20
40
60
80
ASO
PW≤10µs
IDP= --12A
ID= --3A
DC
--1.0
7
5
3
2
--0.1
7
5
op
10
era
10
10
0µ
s
s
1m
ms
0m
s
n(
Ta
=2
5°
C)
tio
Operation in this area
is limited by RDS(on).
Ta=25°C
Single pulse
Mounted on a ceramic board (900mm2�0.8mm)
--0.01
--0.01
2
3
5 7 --0.1
2 3
5 7 --1.0
2
3
5 7 --10
2 3
IT13017
Drain-to-Source Voltage, VDS -- V
00
0.2
0
--10
7
5
3
2
--0.5
0
Allowable Power Dissipation, PD -- W
3
2
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
--4.5
100
120
Ambient Temperature, Ta -- °C
8m
m
)
140
160
IT13018
No. A0957-4/5
MCH3377
Outline Drawing
MCH3377-TL-E, MCH3377-TL-H, MCH3377-TL-W
Land Pattern Example
Mass (g) Unit
0.007 mm
* For reference
Unit: mm
2.1
0.6
0.4
0.65 0.65
Note on usage :Since the MCH3377 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No. A0957-5/5