Data Sheet

Freescale Semiconductor
Technical Data
Document Number: AFT05MS031N
Rev. 1, 4/2013
RF Power LDMOS Transistors
High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFETs
Designed for mobile two--way radio applications with frequencies from
136 to 520 MHz. The high gain, ruggedness and broadband performance of
these devices make them ideal for large--signal, common source amplifier
applications in mobile radio equipment.
Typical Performance: (13.6 Vdc, TA = 25C, CW)
Frequency
(MHz)
Gps
(dB)
D
(%)
P1dB
(W)
136--174 (1,4)
23.2
62.0
31
380--450 (2,4)
18.3
64.1
31
(3,4)
17.7
62.0
31
17.7
71.4
33
450--520
520
(5)
AFT05MS031NR1
AFT05MS031GNR1
136--520 MHz, 31 W, 13.6 V
WIDEBAND
RF POWER LDMOS TRANSISTORS
TO--270--2
PLASTIC
AFT05MS031NR1
Load Mismatch/Ruggedness
Frequency
(MHz)
Signal
Type
155 (1)
CW
VSWR
Pin
(W)
Test
Voltage
>65:1 at all
Phase Angles
0.55
(3 dB Overdrive)
17
420 (2)
1.6
(3 dB Overdrive)
490 (3)
2.0
(3 dB Overdrive)
520 (5)
1.1
(3 dB Overdrive)
Result
No Device
Degradation
1.
2.
3.
4.
Measured in 136--174 MHz VHF broadband reference circuit.
Measured in 380--450 MHz UHF broadband reference circuit.
Measured in 450--520 MHz UHF broadband reference circuit.
The values shown are the minimum measured performance numbers across the
indicated frequency range.
5. Measured in 520 MHz narrowband test circuit.
Features
 Characterized for Operation from 136 to 520 MHz
 Unmatched Input and Output Allowing Wide Frequency Range Utilization
 Integrated ESD Protection
 Integrated Stability Enhancements
 Wideband — Full Power Across the Band:
 136--174 MHz
 380--450 MHz
 450--520 MHz
 225C Capable Plastic Package
 Exceptional Thermal Performance
 High Linearity for: TETRA, SSB, LTE
 Cost--effective Over--molded Plastic Packaging
 In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13 inch Reel.
Typical Applications
 Output Stage VHF Band Mobile Radio
 Output Stage UHF Band Mobile Radio
 Freescale Semiconductor, Inc., 2012--2013. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
TO--270--2 GULL
PLASTIC
AFT05MS031GNR1
Drain
Gate
(Top View)
Note: The backside of the package is the
source terminal for the transistor.
Figure 1. Pin Connections
AFT05MS031NR1 AFT05MS031GNR1
1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +40
Vdc
Gate--Source Voltage
VGS
--6.0, +12
Vdc
Operating Voltage
VDD
17, +0
Vdc
Storage Temperature Range
Tstg
--65 to +150
C
Case Operating Temperature Range
TC
--40 to +150
C
Operating Junction Temperature Range (1,2)
TJ
--40 to +225
C
Total Device Dissipation @ TC = 25C
Derate above 25C
PD
294
1.47
W
W/C
Symbol
Value (2,3)
Unit
RJC
0.67
C/W
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 79C, 31 W CW, 13.6 Vdc, IDQ = 10 mA, 520 MHz
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2, passes 2500 V
Machine Model (per EIA/JESD22--A115)
A, passes 100 V
Charge Device Model (per JESD22--C101)
IV, passes 2000 V
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
Package Peak Temperature
Unit
3
260
C
Table 5. Electrical Characteristics (TA = 25C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 40 Vdc, VGS = 0 Vdc)
IDSS
—
—
2
Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 13.6 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
Adc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
600
nAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 115 Adc)
VGS(th)
1.6
2.1
2.6
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 1.2 Adc)
VDS(on)
—
0.13
—
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 7.5 Adc)
gfs
—
5.8
—
S
Characteristic
Off Characteristics
On Characteristics
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
(continued)
AFT05MS031NR1 AFT05MS031GNR1
2
RF Device Data
Freescale Semiconductor, Inc.
Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Transfer Capacitance
(VDS = 13.6 Vdc  30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
1.6
—
pF
Output Capacitance
(VDS = 13.6 Vdc  30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
49.5
—
pF
Input Capacitance
(VDS = 13.6 Vdc, VGS = 0 Vdc  30 mV(rms)ac @ 1 MHz)
Ciss
—
109
—
pF
Dynamic Characteristics
Functional Tests (1) (In Freescale Narrowband Test Fixture, 50 ohm system) VDD = 13.6 Vdc, IDQ = 10 mA, Pout = 31 W, f = 520 MHz
Common--Source Amplifier Power Gain
Gps
16.5
17.7
19.0
dB
Drain Efficiency
D
70.0
71.4
—
%
Load Mismatch/Ruggedness (In Freescale Test Fixture, 50 ohm system) IDQ = 10 mA
Frequency
(MHz)
Signal
Type
VSWR
520
CW
>65:1 at all Phase Angles
Pin
(W)
1.1
(3 dB Overdrive)
Test Voltage, VDD
Result
17
No Device Degradation
1. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull
wing (GN) parts.
AFT05MS031NR1 AFT05MS031GNR1
RF Device Data
Freescale Semiconductor, Inc.
3
TYPICAL CHARACTERISTICS
7
1000
IDS, DRAIN CURRENT (AMPS)
C, CAPACITANCE (pF)
Measured with 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc
Ciss
100
Coss
10
TA = 25C
6
VGS = 4.25 Vdc
4 Vdc
5
4
3.75 Vdc
3
3.5 Vdc
2
3.25 Vdc
1
Crss
3 Vdc
2.75 Vdc
0
1
0
4
8
12
16
4
0
20
8
12
16
20
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 2. Capacitance versus Drain--Source Voltage
Figure 3. Drain Current versus Drain--Source Voltage
109
VDD = 13.6 Vdc
108
MTTF (HOURS)
ID = 2.5 Amps
107
3.2 Amps
106
3.9 Amps
105
104
90
110
130
150
170
190
210
230
250
TJ, JUNCTION TEMPERATURE (C)
Note: MTTF value represents the total cumulative operating time
under indicated test conditions.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 4. MTTF versus Junction Temperature -- CW
AFT05MS031NR1 AFT05MS031GNR1
4
RF Device Data
Freescale Semiconductor, Inc.
520 MHz NARROWBAND PRODUCTION TEST FIXTURE
C7
C16
B1
C3
C2
C13 C14
C4
L1
C6
B3
B2
C18
C8
C5
L2
C9
C10
CUT OUT AREA
C1
C11
C15
C12
C17
AFT05MS031N
Rev. 1
Figure 5. AFT05MS031NR1 Narrowband Test Circuit Component Layout — 520 MHz
Table 6. AFT05MS031NR1 Narrowband Test Circuit Component Designations and Values — 520 MHz
Part
Description
Part Number
Manufacturer
B1, B2, B3
RF Beads, Long
2743021447
Fair--Rite
C1
22 F, 35 V Tantalum Capacitor
T491X226K035AT
Kemet
C2, C14
0.01 F Chip Capacitors
C0805C103K5RAC
Kemet
C3, C13
0.1 F Chip Capacitors
CDR33BX104AKWS
Kemet
C4
200 pF Chip Capacitor
ATC100B201JT300XT
ATC
C5
6.2 pF Chip Capacitor
ATC100B6R2JT500XT
ATC
C6
3.9 pF Chip Capacitor
ATC100B3R9JT500XT
ATC
C7, C16
180 pF Chip Capacitors
ATC100B181JT200XT
ATC
C8
10 pF Chip Capacitor
ATC100B100JT500XT
ATC
C9, C10, C11, C12
36 pF Chip Capacitors
ATC100B360JT500XT
ATC
C15
27 pF Chip Capacitor
ATC100B270JT500XT
ATC
C17
7.5 pF Chip Capacitor
ATC100B7R5JT500XT
ATC
C18
470 F, 63 V Electrolytic Capacitor
SME63V471M12X25LL
United Chemi--Con
L1
43 nH, 10 Turn Inductor
B10TJLC
Coilcraft
L2
56 nH Inductor
1812SMS--56NJLC
Coilcraft
PCB
0.030, r = 2.55
AD255A
Arlon
AFT05MS031NR1 AFT05MS031GNR1
RF Device Data
Freescale Semiconductor, Inc.
5
AFT05MS031NR1 AFT05MS031GNR1
6
RF Device Data
Freescale Semiconductor, Inc.
RF
INPUT
VGS
+
Z1
C1
C5
C2
C6
Z3
C4
Z4
C7
Z5
Z6
L1
C10
Z7
C8
Z8
C9
Z9
C12
Z10
Z11
L2
C15
Z12
C13
C14
Description
0.352  0.082 Microstrip
Z7
* Line length includes microstrip bends
0.079  0.082 Microstrip
Z6
Z4*
0.370  0.082 Microstrip
0.560  0.060 Microstrip
Z3*
Z5*
0.017  0.082 Microstrip
0.670  0.082 Microstrip
Z2
0.199  0.082 Microstrip
Z1
Microstrip
Z14
Z13*
Z12*
Z11
Z10
Z9
Z8
Microstrip
0.315  0.082 Microstrip
0.1420  0.082 Microstrip
0.1322  0.082 Microstrip
0.091  0.082 Microstrip
0.145  0.275 Microstrip
0.257  0.275 Microstrip
0.190  0.270 Microstrip
Description
Table 7. AFT05MS031NR1 Narrowband Test Circuit Microstrips — 520 MHz
Figure 6. AFT05MS031NR1 Narrowband Test Circuit Schematic — 520 MHz
Z2
C3
C16
C17
Z13
C18
+
C11
Z14
VDS
RF
OUTPUT
TYPICAL CHARACTERISTICS — 520 MHz
50
VDD = 13.6 Vdc, Pin = 0.6 W
Pout, OUTPUT POWER (WATTS)
45
VDD = 13.6 Vdc, Pin = 0.3 W
40
VDD = 12.5 Vdc, Pin = 0.6 W
35
30
25
20
VDD = 12.5 Vdc
Pin = 0.3 W
15
10
5
0
f = 520 MHz
0
1
2
3
4
5
6
VGS, GATE--SOURCE VOLTAGE (VOLTS)
Figure 7. Output Power versus Gate--Source Voltage
20
70
60
17
16
50
Gps
15
40
Pout
14
30
13
20
12
10
D, DRAIN EFFICIENCY (%)
18
Gps, POWER GAIN (dB)
80
D
Pout, OUTPUT POWER (WATTS)
19
90
VDD = 13.6 Vdc, IDQ = 10 mA
f = 520 MHz
0
11
0.03
1
0.1
3
Pin, INPUT POWER (WATTS)
Figure 8. Power Gain, Output Power and Drain
Efficiency versus Input Power
VDD = 13.6 Vdc, IDQ = 10 mA, Pout = 31 W Avg.
f
MHz
Zsource

Zload

520
0.72 + j1.77
1.54 + j0.80
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
50 
= Test circuit impedance as measured from
drain to ground.
Input
Matching
Network
Output
Matching
Network
Device
Under
Test
Zsource
50 
Zload
Figure 9. Narrowband Series Equivalent Source and Load Impedance — 520 MHz
AFT05MS031NR1 AFT05MS031GNR1
RF Device Data
Freescale Semiconductor, Inc.
7
136--174 MHz VHF BROADBAND REFERENCE CIRCUIT
Table 8. 136--174 MHz VHF Broadband Performance (In Freescale Reference Circuit, 50 ohm system)
VDD = 13.6 Volts, IDQ = 100 mA, TA = 25C, CW
Frequency
(MHz)
Gps
(dB)
D
(%)
P1dB
(W)
136
25.0
64.0
31
155
23.2
63.0
31
174
23.2
62.0
31
Table 9. Load Mismatch/Ruggedness (In Freescale Reference Circuit)
Frequency
(MHz)
Signal
Type
155
CW
VSWR
Pin
(W)
>65:1 at all
Phase Angles
0.55
(3 dB Overdrive)
Test Voltage, VDD
Result
17
No Device
Degradation
AFT05MS031NR1 AFT05MS031GNR1
8
RF Device Data
Freescale Semiconductor, Inc.
136--174 MHz VHF BROADBAND REFERENCE CIRCUIT
C1
B1
C14
C16
C17
J1
B2
C11 C12 C13
C15
C2
D37515
C10
L1
R1
C6
C7
Q1
C4
L5
L4
C5
L2
L6
L3
C3
R2
C8
C9
Figure 10. AFT05MS031NR1 VHF Broadband Reference Circuit Component Layout — 136--174 MHz
Table 10. AFT05MS031NR1 VHF Broadband Reference Circuit Component Designations and Values — 136--174 MHz
Part
Description
Part Number
Manufacturer
B1
Low Current Ferrite Bead
2508051107Y0
Fair-Rite
B2
High Current Ferrite Bead
2518065007Y6
Fair-Rite
C1
68 pF Chip Capacitor
ATC600F680JT250XT
ATC
C2
47 pF Chip Capacitor
ATC600F470BT250XT
ATC
C3, C4, C6, C7
100 pF Chip Capacitors
ATC600F101JT250XT
ATC
C5
20 pF Chip Capacitor
ATC600F200JT250XT
ATC
C8, C9
56 pF Chip Capacitors
ATC600F560JT250XT
ATC
C10
27 pF Chip Capacitor
ATC600F270JT250XT
ATC
C11
0.1 F Chip Capacitor
GRM21BR71H104KA01B
Murata
C12
1 F Chip Capacitor
GRM21BR71H105KA12L
Murata
C13, C14, C15
240 pF Chip Capacitors
ATC600F241JT250XT
ATC
C16, C17
10 F Chip Capacitors
GRM31CR61H106KA12L
Murata
J1
3 Pin Connector
AMP-9-146305-0
TE Connectivity
L1
19 nH Inductor
0806SQ--19NGLC
Coilcraft
L2
6.9 nH Inductor
0807SQ--6N9GLC
Coilcraft
L3
27 nH Inductor
0908SQ--27NGLC
Coilcraft
L4
6 nH Inductor
0806SQ--6N0GLC
Coilcraft
L5
14 nH Inductor
0807SQ--14NGLC
Coilcraft
L6
10 nH Inductor
0807SQ--10NGLC
Coilcraft
Q1
RF Power LDMOS Transistor
AFT05MS031NR1
Freescale
R1
62 , 1/4 W Chip Resistor
RG2012N-620-BT1
Susumu
R2
0 , 1/4 W Chip Resistor
CWCR08050000Z0EA
Vishay
PCB
0.020, r = 4.9
S1000-2
Shengyi
AFT05MS031NR1 AFT05MS031GNR1
RF Device Data
Freescale Semiconductor, Inc.
9
AFT05MS031NR1 AFT05MS031GNR1
10
RF Device Data
Freescale Semiconductor, Inc.
RF
INPUT Z1
C1
Z2
L1
Z4
C3
C4
Z5
L2
Z6
R2
C16
Z10
Z11
Z7 Z8
C5
Z9
R1
B1
Z12
C6
Z13
Z23
Z24
Z14 Z15
L3
B2
C7
C13
C8
Z16
C14
C15
L4
Z17
C9
0.034  0.060 Microstrip
0.034  0.120 Microstrip
0.034  0.057 Microstrip
0.034  0.120 Microstrip
0.034  0.075 Microstrip
0.034  0.431 Microstrip
0.034  0.309 Microstrip
0.240  0.020 Microstrip
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Description
Z1
Microstrip
0.240  0.170 Microstrip
0.034  0.130 Microstrip
0.034  0.080 Microstrip
0.240  0.155 Microstrip
0.240  0.115 Microstrip
0.240  0.050 Microstrip
0.034  0.065 Microstrip
0.034  0.140 Microstrip
Z10
Z11
Z12
Z13
Z14
Z15
Z16
Description
Z9
Microstrip
Z24
Z23
Z22
Z21
Z20
Z19
Z18
Z17
Microstrip
Table 11. AFT05MS031NR1 VHF Broadband Reference Circuit Microstrips — 136--174 MHz
Figure 11. AFT05MS031NR1 VHF Broadband Reference Circuit Schematic — 136--174 MHz
C2
Z3
VGS
C17
VDS
Description
L5
Z19
L6
0.034  0.080 Microstrip
0.034  0.130 Microstrip
0.034  0.060 Microstrip
0.034  0.150 Microstrip
0.034  0.050 Microstrip
0.034  0.190 Microstrip
0.034  0.200 Microstrip
0.034  0.230 Microstrip
C10
Z18
Z20
C11
Z21
C12
Z22
RF
OUTPUT
TYPICAL CHARACTERISTICS — 136--174 MHz VHF BROADBAND
REFERENCE CIRCUIT
22.6
74
72
70
22.3
22.2
68
D
22.1
22
Gps
21.9
64
36
33
21.8
Pout
21.7
21.6
130
66
140
150
160
30
27
180
170
D, DRAIN
EFFICIENCY (%)
Gps, POWER GAIN (dB)
22.4
76
VDD = 12.5 Vdc, Pin = 0.2 W (Avg.)
IDQ = 100 mA
Pout, OUTPUT
POWER (WATTS)
22.5
f, FREQUENCY (MHz)
Figure 12. Power Gain, Drain Efficiency and Output Power versus
Frequency at a Constant Input Power — 12.5 V
23.1
70
68
22.8
22.7
D
22.6
Gps
22.5
64
62
39
22.4
22.3
Pout
22.2
22.1
130
66
140
150
160
170
D, DRAIN
EFFICIENCY (%)
Gps, POWER GAIN (dB)
72
36
33
30
180
Pout, OUTPUT
POWER (WATTS)
23
22.9
74
VDD = 13.6 Vdc, Pin = 0.2 W (Avg.)
IDQ = 100 mA
f, FREQUENCY (MHz)
Figure 13. Power Gain, Drain Efficiency and Output Power versus
Frequency at a Constant Input Power — 13.6 V
AFT05MS031NR1 AFT05MS031GNR1
RF Device Data
Freescale Semiconductor, Inc.
11
TYPICAL CHARACTERISTICS — 136--174 MHz VHF BROADBAND
REFERENCE CIRCUIT
50
25
40
Pout, OUTPUT POWER (WATTS)
Pout, OUTPUT POWER (WATTS)
VDD = 13.6 Vdc, Pin = 0.2 W
VDD = 13.6 Vdc, Pin = 0.1 W
VDD = 12.5 Vdc, Pin = 0.2 W
30
VDD = 12.5 Vdc
Pin = 0.1 W
20
Detail A
10
0
0
1
2
3
4
15
VDD = 12.5 Vdc
Pin = 0.2 W
VDD = 12.5 Vdc
Pin = 0.1 W
10
VDD = 13.6 Vdc
Pin = 0.1 W
5
0
f = 155 MHz
VDD = 13.6 Vdc
Pin = 0.2 W
20
f = 155 MHz
0
0.5
1
1.5
2.5
2
3
3.5
VGS, GATE--SOURCE VOLTAGE (VOLTS)
5
Detail A
VGS, GATE--SOURCE VOLTAGE (VOLTS)
VDD = 13.6 Vdc, IDQ = 100 mA
Gps, POWER GAIN (dB)
26
D
136 MHz
80
155 MHz 120
70
174 MHz
25
24
23
140
100
80
136 MHz
Gps
60
155 MHz
22 174 MHz
Pout
21
20
0.01
40
136 MHz
155 MHz
20
174 MHz
0.1
10
0.5
Pout, OUTPUT POWER (WATTS)
27
60
50
40
30
20
D, DRAIN EFFICIENCY (%)
Figure 14. Output Power versus Gate--Source Voltage
10
Pin, INPUT POWER (WATTS)
Figure 15. Power Gain, Output Power and Drain
Efficiency versus Input Power and Frequency
AFT05MS031NR1 AFT05MS031GNR1
12
RF Device Data
Freescale Semiconductor, Inc.
136--174 MHz VHF BROADBAND REFERENCE CIRCUIT
Zsource
Zo = 5 
f = 175 MHz
f = 135 MHz
f = 175 MHz
Zload
f = 135 MHz
VDD = 13.6 Vdc, IDQ = 100 mA, Pout = 31 W Avg.
f
MHz
Zsource

Zload

135
3.33 + j6.92
2.42 - j0.95
140
3.66 + j7.23
2.59 - j0.96
145
3.97 + j7.44
2.71 - j1.03
150
4.21 + j7.53
2.78 - j1.13
155
4.31 + j7.54
2.77 - j1.23
160
4.21 + j7.54
2.71 - j1.31
165
3.94 + j7.65
2.61 - j1.34
170
3.58 + j7.94
2.50 - j1.32
175
3.24 + j8.42
2.41 - j1.24
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
50 
Input
Matching
Network
= Test circuit impedance as measured from
drain to ground.
Output
Matching
Network
Device
Under
Test
Zsource
50 
Zload
Figure 16. VHF Broadband Series Equivalent Source and Load Impedance — 136--174 MHz
AFT05MS031NR1 AFT05MS031GNR1
RF Device Data
Freescale Semiconductor, Inc.
13
380--450 MHz UHF BROADBAND REFERENCE CIRCUIT
Table 12. 380--450 MHz UHF Broadband Performance (In Freescale Reference Circuit, 50 ohm system)
VDD = 13.6 Volts, IDQ = 100 mA, TA = 25C, CW
Frequency
(MHz)
Gps
(dB)
D
(%)
P1dB
(W)
380
18.7
64.1
31
420
18.6
67.0
31
450
18.3
68.1
31
Table 13. Load Mismatch/Ruggedness (In Freescale Reference Circuit)
Frequency
(MHz)
Signal
Type
420
CW
VSWR
Pin
(W)
>65:1 at all
Phase Angles
1.6
(3 dB Overdrive)
Test Voltage, VDD
Result
17
No Device
Degradation
AFT05MS031NR1 AFT05MS031GNR1
14
RF Device Data
Freescale Semiconductor, Inc.
380--450 MHz UHF BROADBAND REFERENCE CIRCUIT
VDS
VGS
B1
C1
B2
C13 C14 C15
C17 J1
C16
C11
D37515
C6
L1
C12
R1
C5*
L4
L7
C10
C8
C2
Q1
L6
C7
C4*
L2
L3
L5
C3
C9
* C4 and C5 are mounted vertically.
Figure 17. AFT05MS031NR1 UHF Broadband Reference Circuit Component Layout — 380--450 MHz
Table 14. AFT05MS031NR1 UHF Broadband Reference Circuit Component Designations and Values — 380--450 MHz
Part
Description
Part Number
Manufacturer
B1
Low Current Ferrite Bead
2508051107Y0
Fair--Rite
B2
High Current Ferrite Bead
2518065007Y6
Fair--Rite
C1, C5
56 pF Chip Capacitors
ATC600F560JT250XT
ATC
C2
3.9 pF Chip Capacitor
ATC600F3R9BT250XT
ATC
C3
18 pF Chip Capacitor
ATC600F180JT250XT
ATC
C4
47 pF Chip Capacitor
ATC600F470JT250XT
ATC
C6, C12, C15
240 pF Chip Capacitors
ATC600F241JT250XT
ATC
C7
24 pF Chip Capacitor
ATC600F240JT250XT
ATC
C8
68 pF Chip Capacitor
ATC600F680JT250XT
ATC
C9
27 pF Chip Capacitor
ATC600F270JT250XT
ATC
C10
8.2 pF Chip Capacitor
ATC600F8R2BT250XT
ATC
C11
3.0 pF Chip Capacitor
ATC600F3R0BT250XT
ATC
C13
0.1 F Chip Capacitor
GRM21BR71H104KA01B
Murata
C14
1 F Chip Capacitor
GRM21BR71H105KA12L
Murata
C16, C17
10 F Chip Capacitors
GRM31CR61H106KA12L
Murata
J1
3 Pin Connector
AMP--9--146305--0
TE Connectivity
L1, L2, L3, L6
5.5 nH Inductors
0806SQ--5N5GLC
Coilcraft
L4
17 nH Inductor
0908SQ--17NGLC
Coilcraft
L5
1.65 nH Inductor
0906--2KLC
Coilcraft
L7
2.55 nH Inductor
0906--3JLC
Coilcraft
Q1
RF Power LDMOS Transistor
AFT05MS031NR1
Freescale
R1
62 , 1/4 W Chip Resistor
RG2012N--620--BT1
Susumu
PCB
0.020, r = 4.9
S1000--2
Shengyi
AFT05MS031NR1 AFT05MS031GNR1
RF Device Data
Freescale Semiconductor, Inc.
15
AFT05MS031NR1 AFT05MS031GNR1
16
RF Device Data
Freescale Semiconductor, Inc.
RF
INPUT Z1
C1
Z2
L1
C2
Z4
L2
C3
Z6
L3
Z7
C4
Z8
C5
Z9
C6
Z10
Z12
Z13
Z11
R1
B1
Z14
C7
Z15
Z16
Z18 Z19
L4
B2
Z17
C8
Z20
L5
C13
0.034  0.056 Microstrip
0.034  0.154 Microstrip
0.034  0.237 Microstrip
0.034  0.234 Microstrip
0.034  0.010 Microstrip
0.034  0.083 Microstrip
0.034  0.178 Microstrip
Z3
Z4
Z5*
Z6*
Z7
Z8
Z9
* Line length includes microstrip bends
0.034  0.200 Microstrip
Z2
Description
0.034  0.060 Microstrip
Z1
Microstrip
Z21
Z22
C9
C16
L6
0.240  0.142 Microstrip
0.034  0.149 Microstrip
0.034  0.085 Microstrip
0.240  0.090 Microstrip
0.240  0.186 Microstrip
0.034  0.149 Microstrip
0.034  0.085 Microstrip
0.240  0.044 Microstrip
Z11
Z12
Z13*
Z14
Z15
Z16
Z17*
Z18
Description
0.240  0.048 Microstrip
Z10
Microstrip
Z27
Z26
Z25
Z24
Z23
Z22*
Z21*
Z20*
Z19
Microstrip
Z23
C10
Z24
0.034  0.060 Microstrip
0.034  0.077 Microstrip
0.034  0.073 Microstrip
0.034  0.083 Microstrip
0.034  0.112 Microstrip
0.034  0.361 Microstrip
0.034  0.110 Microstrip
0.034  0.201 Microstrip
0.034  0.057 Microstrip
Description
Figure 18. AFT05MS031NR1 UHF Broadband Reference Circuit Schematic — 380--450 MHz
Z5
C17
C14
Table 15. AFT05MS031NR1 UHF Broadband Reference Circuit Microstrips — 380--450 MHz
Z3
VGS
C15
VDS
L7
Z25
C11
Z26
C12
Z27
RF
OUTPUT
18
Gps, POWER GAIN (dB)
17.8
80
VDD = 12.5 Vdc, Pin = 0.5 W (Avg.)
IDQ = 100 mA
75
D
70
65
17.7
17.6
60
Gps
17.5
17.4
30
29
Pout
17.3
28
17.2
27
17.1
26
17
370
380
390
400
410
420
430
440
450
Pout, OUTPUT
POWER (WATTS)
17.9
D, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS — 380--450 MHz UHF BROADBAND
REFERENCE CIRCUIT
25
460
f, FREQUENCY (MHz)
18.4
Gps, POWER GAIN (dB)
18.3
80
VDD = 13.6 Vdc, Pin = 0.5 W (Avg.)
IDQ = 100 mA
75
D
18.2
70
65
Gps
18.1
60
18
35
17.9
34
17.8
33
Pout
17.7
32
17.6
31
17.5
370
380
390
400
410
420
430
440
450
Pout, OUTPUT
POWER (WATTS)
18.5
D, DRAIN
EFFICIENCY (%)
Figure 19. Power Gain, Drain Efficiency and Output Power versus
Frequency at a Constant Input Power — 12.5 V
30
460
f, FREQUENCY (MHz)
Figure 20. Power Gain, Drain Effiency and Output Power versus
Frequency at a Constant Input Power — 13.6 V
AFT05MS031NR1 AFT05MS031GNR1
RF Device Data
Freescale Semiconductor, Inc.
17
TYPICAL CHARACTERISTICS — 380--450 MHz UHF BROADBAND
REFERENCE CIRCUIT
VDD = 13.6 Vdc, Pin = 0.5 W
5
Pout, OUTPUT POWER (WATTS)
Pout, OUTPUT POWER (WATTS)
50
VDD = 13.6 Vdc, Pin = 0.25 W
40
VDD = 12.5 Vdc, Pin = 0.5 W
30
VDD = 12.5 Vdc,
Pin = 0.25 W
20
10
f = 420 MHz
0
1
2
3
VDD = 12.5 Vdc,
Pin = 0.5 W
2
VDD = 12.5 Vdc,
Pin = 0.25 W
1
f = 420 MHz
0
Detail A
0
3
4
VDD = 13.6 Vdc, Pin = 0.25 W
VDD = 13.6 Vdc,
4 Pin = 0.5 W
0
0.4
0.8
1.6
1.2
2
VGS, GATE--SOURCE VOLTAGE (VOLTS)
5
Detail A
VGS, GATE--SOURCE VOLTAGE (VOLTS)
Figure 21. Output Power versus Gate--Source Voltage
420 MHz
450 MHz
380 MHz
450 MHz
18
420 MHz
Gps
16
60
450 MHz
40
380 MHz
380 MHz
14
12
0.01
20
Pout
D
0
0.1
1
70
Pout, OUTPUT POWER (WATTS)
420 MHz
80
60
50
40
30
20
D, DRAIN EFFICIENCY (%)
VDD = 13.6 Vdc, IDQ = 100 mA
20
Gps, POWER GAIN (dB)
80
100
22
10
4
Pin, INPUT POWER (WATTS)
Figure 22. Power Gain, Output Power and Drain
Efficiency versus Input Power and Frequency
AFT05MS031NR1 AFT05MS031GNR1
18
RF Device Data
Freescale Semiconductor, Inc.
380--450 MHz UHF BROADBAND REFERENCE CIRCUIT
Zo = 5 
f = 450 MHz
f = 380 MHz
f = 450 MHz
Zsource
f = 380 MHz
Zload
VDD = 13.6 Vdc, IDQ = 100 mA, Pout = 31 W Avg.
f
MHz
Zsource

Zload

380
1.57 + j1.94
2.53 -- j0.27
390
1.66 + j2.07
2.53 -- j0.26
400
1.74 + j2.16
2.56 -- j0.27
410
1.79 + j2.20
2.49 -- j0.29
420
1.79 + j2.21
2.38 -- j0.28
430
1.74 + j2.21
2.26 -- j0.24
440
1.62 + j2.23
2.11 -- j0.16
450
1.45 + j2.29
1.95 -- j0.05
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
50 
= Test circuit impedance as measured from
drain to ground.
Input
Matching
Network
Output
Matching
Network
Device
Under
Test
Zsource
50 
Zload
Figure 23. UHF Broadband Series Equivalent Source and Load Impedance — 380--450 MHz
AFT05MS031NR1 AFT05MS031GNR1
RF Device Data
Freescale Semiconductor, Inc.
19
450--520 MHz UHF BROADBAND REFERENCE CIRCUIT
Table 16. 450--520 MHz UHF Broadband Performance (In Freescale Reference Circuit, 50 ohm system)
VDD = 13.6 Volts, IDQ = 100 mA, TA = 25C, CW
Frequency
(MHz)
Gps
(dB)
D
(%)
P1dB
(W)
450
17.7
62.0
31
490
18.7
63.8
31
520
17.9
67.0
31
Table 17. Load Mismatch/Ruggedness (In Freescale Reference Circuit)
Frequency
(MHz)
Signal
Type
490
CW
VSWR
Pin
(W)
>65:1 at all
Phase Angles
2.0
(3 dB Overdrive)
Test Voltage, VDD
Result
17
No Device
Degradation
AFT05MS031NR1 AFT05MS031GNR1
20
RF Device Data
Freescale Semiconductor, Inc.
450--520 MHz UHF BROADBAND REFERENCE CIRCUIT
C1
VDS
VGS
B1
C19 J1
C17
B2
C13 C14 C15
C18
D37515
C16
L1
L7
R1
C5
C6
C9 C11
L4
Q1
C2
C12
C8
C4
C7
L2
L3
L6
L5
C3
C10
Figure 24. AFT05MS031NR1 UHF Broadband Reference Circuit Component Layout — 450--520 MHz
Table 18. AFT05MS031NR1 UHF Broadband Reference Circuit Component Designations and Values — 450--520 MHz
Part
Description
Part Number
Manufacturer
B1
Low Current Ferrite Bead
2508051107Y0
Fair--Rite
B2
High Current Ferrite Bead
2518065007Y6
Fair--Rite
C1
56 pF Chip Capacitor
ATC600F560JT250XT
ATC
C2
2.7 pF Chip Capacitor
ATC600F2R7BT250XT
ATC
C3
12 pF Chip Capacitor
ATC600F120JT250XT
ATC
C4, C9
27 pF Chip Capacitors
ATC600F270JT250XT
ATC
C5, C8
33 pF Chip Capacitors
ATC600F330JT250XT
ATC
C6
39 pF Chip Capacitor
ATC600F390JT250XT
ATC
C7, C10
18 pF Chip Capacitors
ATC600F180JT250XT
ATC
C11
8.2 pF Chip Capacitor
ATC600F8R2BT250XT
ATC
C12
1.8 pF Chip Capacitor
ATC600F1R8BT250XT
ATC
C13
0.1 F Chip Capacitor
GRM21BR71H104KA01B
Murata
C14
1 F Chip Capacitor
GRM21BR71H105KA12L
Murata
C15, C16, C17
240 pF Chip Capacitors
ATC600F241JT250XT
ATC
C18, C19
10 F Chip Capacitors
GRM31CR61H106KA12L
Murata
J1
3 Pin Connector
AMP--9--146305--0
TE Connectivity
L1, L3
6.0 nH Inductors
0806SQ--6N0GLC
Coilcraft
L2, L6
5.5 nH Inductors
0806SQ5N5GLC
Coilcraft
L4
17 nH Inductor
0908SQ--17NGLC
Coilcraft
L5, L7
1.65 nH Inductors
0906--2KLC
Coilcraft
Q1
RF Power LDMOS Transistor
AFT05MS031NR1
Freescale
R1
62 , 1/4 W Chip Resistor
RG2012N--620--BT1
Susumu
PCB
0.020, r = 4.9
S1000--2
Shengyi
AFT05MS031NR1 AFT05MS031GNR1
RF Device Data
Freescale Semiconductor, Inc.
21
AFT05MS031NR1 AFT05MS031GNR1
22
RF Device Data
Freescale Semiconductor, Inc.
RF
INPUT Z1
C1
Z2
L1
C2
Z4
L2
C3
Z6
L3
Z7
C4
Z8
C5
Z9
Z13
Z14
C6
Z10 Z11
C16
Z12
R1
B1
Z15
C7
Z16
Z17
C8
Z19 Z20 Z21
L4
B2
Z18
C9
Z22
C13
0.034  0.160 Microstrip
0.034  0.010 Microstrip
0.034  0.115 Microstrip
0.034  0.060 Microstrip
0.034  0.150 Microstrip
Z6*
Z7
Z8
Z9
Z10
* Line length includes microstrip bends
0.034  0.054 Microstrip
0.034  0.202 Microstrip
Z5*
0.034  0.128 Microstrip
Z3
Z4
0.034  0.060 Microstrip
0.034  0.200 Microstrip
Z1
Description
Z2
Microstrip
L5
Z23
C18
C10
Z24
L6
Z20
Z19
Z18
Z17
Z16
Z15
Z14
Z13
Z12
Z11
Microstrip
0.034  0.057 Microstrip
0.240  0.044 Microstrip
0.034  0.184 Microstrip
0.034  0.149 Microstrip
0.240  0.170 Microstrip
0.240  0.054 Microstrip
0.034  0.084 Microstrip
0.034  0.149 Microstrip
0.240  0.180 Microstrip
0.240  0.010 Microstrip
Description
Z29
Z28
Z27
Z26
Z25
Z24*
Z23*
Z22
Z21
Microstrip
Z25
0.034  0.060 Microstrip
0.034  0.188 Microstrip
0.034  0.022 Microstrip
0.034  0.177 Microstrip
0.034  0.018 Microstrip
0.034  0.295 Microstrip*
0.034  0.118 Microstrip*
0.034  0.176 Microstrip
0.034  0.010 Microstrip
Description
Figure 25. AFT05MS031NR1 UHF Broadband Reference Circuit Schematic — 450--520 MHz
Z5
C19
C14
Table 19. AFT05MS031NR1 UHF Broadband Reference Circuit Microstrips — 450--520 MHz
Z3
VGS
C15
VDS
C11
Z26
L7
Z27
C12
C17
Z28
Z29
RF
OUTPUT
TYPICAL CHARACTERISTICS — 450--520 MHz UHF BROADBAND
REFERENCE CIRCUIT
18
D
68
66
64
17.4
Gps
17.2
62
60
17
16.8
30
Pout
16.6
29
16.4
28
16.2
27
16
440
D, DRAIN
EFFICIENCY (%)
Gps, POWER GAIN (dB)
17.6
70
VDD = 12.5 Vdc, Pin = 0.5 W (Avg.)
IDQ = 100 mA
450
460
470
480
490
500
510
520
26
530
Pout, OUTPUT
POWER (WATTS)
17.8
f, FREQUENCY (MHz)
73
71
VDD = 13.6 Vdc, Pin = 0.5 W (Avg.)
IDQ = 100 mA
69
67
65
Gps
18
17.75
D
17.5
17.25
17
Pout
16.75
16.5
16.25
16
440
63
61
36
34
32
30
28
450
460
470
480
490
500
510
520
26
530
D, DRAIN
EFFICIENCY (%)
19
18.75
18.5
18.25
Pout, OUTPUT
POWER (WATTS)
Gps, POWER GAIN (dB)
Figure 26. Power Gain, Drain Efficiency and Output Power versus
Frequency at a Constant Input Power — 12.5 V
f, FREQUENCY (MHz)
Figure 27. Power Gain, Drain Efficiency and Output Power versus
Frequency at a Constant Input Power — 13.6 V
AFT05MS031NR1 AFT05MS031GNR1
RF Device Data
Freescale Semiconductor, Inc.
23
TYPICAL CHARACTERISTICS — 450--520 MHz UHF BROADBAND
REFERENCE CIRCUIT
25
VDD = 13.6 Vdc, Pin = 0.5 W
50
Pout, OUTPUT POWER (WATTS)
Pout, OUTPUT POWER (WATTS)
60
VDD = 13.6 Vdc, Pin = 0.25 W
VDD = 12.5 Vdc, Pin = 0.5 W
40
30
VDD = 12.5 Vdc,
Pin = 0.25 W
20
f = 490 MHz
10
0
1
2
3
4
15
VDD = 12.5 Vdc,
Pin = 0.5 W
VDD = 12.5 Vdc,
Pin = 0.25 W
5
f = 490 MHz
0.5
0
1
1.5
2
2.5
3
3.5
VGS, GATE--SOURCE VOLTAGE (VOLTS)
6
5
VDD = 13.6 Vdc, Pin = 0.25 W
10
0
Detail A
0
20
VDD = 13.6 Vdc,
Pin = 0.5 W
Detail A
VGS, GATE--SOURCE VOLTAGE (VOLTS)
Figure 28. Output Power versus Gate--Source Voltage
18
490 MHz
D
450 MHz
490 MHz
40
520 MHz
520 MHz
14
Pout
12
0.01
60
450 MHz
VDD = 13.6 Vdc, IDQ = 100 mA
0.1
1
20
D, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
Gps
16
80
520 MHz
490 MHz
450 MHz
Pout, OUTPUT POWER (WATTS)
20
0
3
Pin, INPUT POWER (WATTS)
Figure 29. Power Gain, Output Power and Drain
Efficiency versus Input Power and Frequency
AFT05MS031NR1 AFT05MS031GNR1
24
RF Device Data
Freescale Semiconductor, Inc.
450--520 MHz UHF BROADBAND REFERENCE CIRCUIT
f = 520 MHz
Zo = 5 
f = 450 MHz
Zsource
f = 520 MHz
f = 450 MHz
Zload
VDD = 13.6 Vdc, IDQ = 100 mA, Pout = 31 W Avg.
f
MHz
Zsource

Zload

450
1.37 + j1.64
2.57 -- j1.01
460
1.43 + j1.72
2.49 -- j1.03
470
1.47 + j1.79
2.38 -- j1.03
480
1.49 + j1.83
2.26 -- j1.01
490
1.47 + j1.86
2.11 -- j0.95
500
1.41 + j1.89
1.97 -- j0.87
510
1.32 + j1.93
1.82 -- j0.76
520
1.20 + j1.99
1.68 -- j0.62
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
50 
= Test circuit impedance as measured from
drain to ground.
Input
Matching
Network
Output
Matching
Network
Device
Under
Test
Zsource
50 
Zload
Figure 30. UHF Broadband Series Equivalent Source and Load Impedance — 450--520 MHz
AFT05MS031NR1 AFT05MS031GNR1
RF Device Data
Freescale Semiconductor, Inc.
25
PACKAGE DIMENSIONS
AFT05MS031NR1 AFT05MS031GNR1
26
RF Device Data
Freescale Semiconductor, Inc.
AFT05MS031NR1 AFT05MS031GNR1
RF Device Data
Freescale Semiconductor, Inc.
27
AFT05MS031NR1 AFT05MS031GNR1
28
RF Device Data
Freescale Semiconductor, Inc.
AFT05MS031NR1 AFT05MS031GNR1
RF Device Data
Freescale Semiconductor, Inc.
29
AFT05MS031NR1 AFT05MS031GNR1
30
RF Device Data
Freescale Semiconductor, Inc.
AFT05MS031NR1 AFT05MS031GNR1
RF Device Data
Freescale Semiconductor, Inc.
31
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following documents, software and tools to aid your design process.
Application Notes
 AN1907: Solder Reflow Attach Method for High Power RF Devices in Over--Molded Plastic Packages
 AN1955: Thermal Measurement Methodology of RF Power Amplifiers
 AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages
Engineering Bulletins
 EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
 Electromigration MTTF Calculator
 RF High Power Model
 .s2p File
Development Tools
 Printed Circuit Boards
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
June 2012

1
Apr. 2013
 Load Mismatch/Ruggedness tables: changed output power to input power to clarify the conditions used
during test, p. 1, 3, 14, 20
Initial Release of Data Sheet
 Added 136--174 MHz VHF Broadband Reference Circuit as follows:
-- Typical Performance table, p. 1
-- Table 8, VHF Broadband Performance, p. 8
-- Table 9, Load Mismatch/Ruggedness, p. 8
-- Fig. 10, VHF Broadband Reference Circuit Component Layout, p. 9
-- Table 10, VHF Broadband Reference Circuit Component Designations and Values, p. 9
-- Fig. 11, VHF Broadband Reference Circuit Schematic, p. 10
-- Table 11, VHF Broadband Reference Circuit Microstrips, p. 10
-- Fig. 12, Power Gain, Drain Efficiency and Output Power versus Frequency at a Constant Input
Power -- 12.5 V, p. 11
-- Fig. 13, Power Gain, Drain Efficiency and Output Power versus Frequency at a Constant Input
Power -- 13.6 V, p. 11
-- Fig. 14, Output Power versus Gate--Source Voltage, p. 12
-- Fig. 15, Power Gain, Output Power and Drain Efficiency versus Input Power and Frequency, p. 12
-- Fig. 16, VHF Broadband Series Equivalent Source and Load Impedance, p. 13
 Figs. 10, 17 and 24, Reference Circuit Component Layouts: added manufacturer part number, p. 9, 15, 21
 Fig. 23, UHF Broadband Series Equivalent Source and Load Impedance — 380--450 MHz: corrected bias
measurement from 10 mA to 100 mA, p. 19
AFT05MS031NR1 AFT05MS031GNR1
32
RF Device Data
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E 2012--2013 Freescale Semiconductor, Inc.
AFT05MS031NR1 AFT05MS031GNR1
Document
Number:
RF Device
DataAFT05MS031N
Rev.
1, 4/2013Semiconductor, Inc.
Freescale
33
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