Data Sheet

Freescale Semiconductor
Technical Data
Document Number: AFT05MS003N
Rev. 0, 8/2015
RF Power LDMOS Transistor
High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFET
AFT05MS003N
Designed for handheld two--way radio applications with frequencies from 1.8
to 941 MHz. The high gain, ruggedness and wideband performance of this
device make it ideal for large--signal, common--source amplifier applications in
handheld radio equipment.
Wideband Performance (7.5 Vdc, TA = 25C, CW)
Frequency
(MHz)
Pin
(dBm)
Gps
(dB)
D
(%)
Pout
(W)
136–174 (1,4)
17.8
17.1
67.1
3.2
(2,4)
20.0
15.1
73.0
3.2
350–520
1.8–941 MHz, 3 W, 7.5 V
WIDEBAND
AIRFAST RF POWER
LDMOS TRANSISTOR
Narrowband Performance (7.5 Vdc, TA = 25C, CW)
Frequency
(MHz)
Gps
(dB)
D
(%)
Pout
(W)
520 (3)
20.8
68.3
3.0
SOT--89
Load Mismatch/Ruggedness
Frequency
(MHz)
Signal
Type
520 (3)
CW
1.
2.
3.
4.
VSWR
> 65:1 at all
Phase Angles
Pin
(dBm)
Test
Voltage
21.1
9.0
Result
Source
2
No Device
Degradation
Measured in 136–174 MHz VHF broadband reference circuit.
Measured in 350–520 MHz UHF broadband reference circuit.
Measured in 520 MHz narrowband production test circuit.
The values shown are the center band performance numbers across the indicated
frequency range.
1
2
3
Gate Source Drain
Figure 1. Pin Connections
Features







Characterized for Operation from 1.8 to 941 MHz
Unmatched Input and Output Allowing Wide Frequency Range Utilization
Integrated ESD Protection
Integrated Stability Enhancements
Wideband — Full Power Across the Band
Exceptional Thermal Performance
Extreme Ruggedness
Typical Applications





Output Stage VHF Band Handheld Radio
Output Stage UHF Band Handheld Radio
Output Stage for 700–900 MHz Handheld Radio
Smart Metering
Driver for 1.8–941 MHz Applications
 Freescale Semiconductor, Inc., 2015. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
AFT05MS003N
1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
–0.5, +30
Vdc
Gate--Source Voltage
VGS
–6.0, +12
Vdc
Operating Voltage
VDD
12.5, +0
Vdc
Storage Temperature Range
Tstg
–65 to +150
C
Case Operating Temperature Range
TC
–40 to +150
C
Operating Junction Temperature Range
(1,2)
Total Device Dissipation @ TC = 25C
Derate above 25C
TJ
–40 to +150
C
PD
30.5
0.24
W
W/C
Symbol
Value (2,3)
Unit
RJC
4.1
C/W
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 79C, 3 W CW, 7.5 Vdc, IDQ = 100 mA, 520 MHz
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
1C, passes 1000 V
Machine Model (per EIA/JESD22--A115)
A, passes 100 V
Charge Device Model (per JESD22--C101)
IV, passes 2000 V
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
Package Peak Temperature
Unit
1
260
C
Table 5. Electrical Characteristics (TA = 25C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 30 Vdc, VGS = 0 Vdc)
IDSS
—
—
2
Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 7.5 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
Adc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
500
nAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 67 Adc)
VGS(th)
1.8
2.2
2.6
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 700 mAdc)
VDS(on)
—
0.25
—
Vdc
gfs
—
3.1
—
S
Reverse Transfer Capacitance
(VDS = 7.5 Vdc  30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
1.1
—
pF
Output Capacitance
(VDS = 7.5 Vdc  30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
23.2
—
pF
Input Capacitance
(VDS = 7.5 Vdc, VGS = 0 Vdc  30 mV(rms)ac @ 1 MHz)
Ciss
—
38.5
—
pF
Characteristic
Off Characteristics
On Characteristics
Forward Transconductance
(VDS = 7.5 Vdc, ID = 2.6 Adc)
Dynamic Characteristics
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf/calculators.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf and search for AN1955.
(continued)
AFT05MS003N
2
RF Device Data
Freescale Semiconductor, Inc.
Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performance (In Freescale Narrowband Production Test Fixture, 50 ohm system) VDD = 7.5 Vdc, IDQ = 100 mA, Pin = 13.95 dBm,
f = 520 MHz
Common--Source Amplifier Output Power
Pout
—
3.0
—
W
D
—
68.3
—
%
Drain Efficiency
Load Mismatch/Ruggedness (In Freescale Narrowband Production Test Fixture, 50 ohm system) IDQ = 100 mA
Frequency
(MHz)
Signal
Type
VSWR
Pin
(dBm)
Test Voltage, VDD
Result
520
CW
> 65:1 at all Phase Angles
21.1
9.0
No Device Degradation
Table 6. Ordering Information
Device
AFT05MS003NT1
Tape and Reel Information
T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel
Package
SOT--89
AFT05MS003N
RF Device Data
Freescale Semiconductor, Inc.
3
TYPICAL CHARACTERISTICS
100
C, CAPACITANCE (pF)
Ciss
Coss
10
Crss
1
Measured with 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc
0.1
0
2
6
4
10
8
12
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 2. Capacitance versus Drain--Source Voltage
109
MTTF (HOURS)
VDD = 50 Vdc
ID = 0.476 Amps
108
0.594 Amps
107
0.714 Amps
106
90
100
110
120
130
140
150
160
TJ, JUNCTION TEMPERATURE (C)
Note: MTTF value represents the total cumulative operating time
under indicated test conditions.
MTTF calculator available at http:/www.freescale.com/rf/calculators.
Figure 3. MTTF versus Junction Temperature — CW
AFT05MS003N
4
RF Device Data
Freescale Semiconductor, Inc.
136–174 MHz VHF BROADBAND REFERENCE CIRCUIT
Table 7. 136–174 MHz VHF Broadband Performance (In Freescale VHF Broadband Reference Circuit,
50 ohm system) VDD = 7.5 Volts, IDQ = 60 mA, TA = 25C, CW
Frequency
(MHz)
Pin
(dBm)
Gps
(dB)
D
(%)
Pout
(W)
135
17.8
17.5
68.1
3.5
155
17.8
17.1
67.1
3.2
175
17.8
17.2
65.6
3.3
Table 8. Load Mismatch/Ruggedness (In Freescale VHF Broadband Reference Circuit)
Frequency
(MHz)
Signal
Type
155
CW
VSWR
> 65:1 at all
Phase Angles
Pin
(dBm)
Test Voltage, VDD
Result
20.0
9.0
No Device
Degradation
AFT05MS003N
RF Device Data
Freescale Semiconductor, Inc.
5
136–174 MHz VHF BROADBAND REFERENCE CIRCUIT — 0.83  1.86 (2.1 cm  4.7 cm)
J1
C12
C13
C1
C11
C14 C15 C16
L4
C17 C18 C19
C10
L6
C2
C3
R1
L1
C9
Q1
L2
C7 C8
L5
L3
C4 C5 C6
D61839
AFT05MS003N Rev. 0 (136–174 MHz)
Figure 4. AFT05MS003N VHF Broadband Reference Circuit Component Layout — 136–174 MHz
Table 9. AFT05MS003N VHF Broadband Reference Circuit Component Designations and Values — 136–174 MHz
Part
Description
Part Number
Manufacturer
C1, C11
1500 pF Chip Capacitors
C2012X7R2A152K085AM
TDK
C2, C3, C4, C5, C8
56 pF Chip Capacitors
GQM2195C2E560GB12D
Murata
C6, C7
47 pF Chip Capacitors
GQM2195C2E470GB12D
Murata
C9
39 pF Chip Capacitor
GQM2195C2E390GB12D
Murata
C10
20 pF Chip Capacitor
GQM2195C2E200GB12D
Murata
C12, C13
10 F, 50 V Electrolytic Capacitors
UVR1H100MDD
Nichicon
C14, C19
1 F Chip Capacitors
GRM21BR71H105KA12L
Murata
C15, C18
1 nF Chip Capacitors
C2012X7R2E102M
TDK
C16, C17
100 pF Chip Capacitors
ATC600F101JT250XT
ATC
J1
Right-Angle Breakaway Headers (3 pins)
22-28-8360
Molex
L1
12.1 nH Inductor
0908SQ12N
Coilcraft
L2
11.2 nH Inductor
0807SQ11N
Coilcraft
L3, L4
25.0 nH Inductors
0908SQ25N
Coilcraft
L5
17.0 nH Inductor
0908SQ17N
Coilcraft
L6
23.0 nH Inductor
0908SQ23N
Coilcraft
Q1
RF Power LDMOS Transistor
AFT05MS003NT1
Freescale
R1
100 , 1/4 W Chip Resistor
CRCW1206100RFKEA
Vishay
PCB
0.020, r = 4.8, FR4 (S--1000)
D61839
MTL
AFT05MS003N
6
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS — 136–174 MHz VHF BROADBAND
REFERENCE CIRCUIT
21
20
55
18
45
17
35
Gps
16
5
15
Pout, OUTPUT
POWER (WATTS)
Gps, POWER GAIN (dB)
65
D
19
D, DRAIN
EFFICIENCY (%)
75
4
14
VDD = 7.5 Vdc
Pin = 17.8 dBm
IDQ = 60 mA
13
12
125
135
3
Pout
145
165
155
2
1
185
175
f, FREQUENCY (MHz)
Figure 5. Power Gain, Drain Efficiency and Output Power
versus Frequency at a Constant Pin
4
f = 155 MHz, VDD = 7.5 Vdc
0.6
3
Pin = 13.0 dBm
Pin = 16.0 dBm
2.5
Pout, OUTPUT POWER (WATTS)
Pout, OUTPUT POWER (WATTS)
3.5
2
1.5
1
0.5
0
0
0.5
1
1.5
2
3.5
3
2.5
0.4
Pin = 16.0 dBm
0.3
0.2
0.1
0
Detail A
f = 155 MHz, VDD = 7.5 Vdc
0.5
Pin = 13.0 dBm
0
0.5
1
1.5
2
2.5
VGS, GATE--SOURCE VOLTAGE (VOLTS)
4
Detail A
VGS, GATE--SOURCE VOLTAGE (VOLTS)
Figure 6. Output Power versus Gate--Source Voltage
23
40
155 MHz
21
19
20
Gps
135 MHz
17
0
4
175 MHz
15
175 MHz
13
3
Pout
2
135 MHz
11
9
60
155 MHz
175 MHz
135 MHz
VDD = 7.5 Vdc
IDQ = 60 mA
155 MHz
0
10
20
30
D, DRAIN
EFFICIENCY (%)
Gps, POWER GAIN (dB)
80
D
25
40
50
60
70
80
90
100
1
0
110
Pout, OUTPUT
POWER (WATTS)
27
Pin, INPUT POWER (mW)
Figure 7. Power Gain, Drain Efficiency and Output
Power versus Input Power and Frequency
AFT05MS003N
RF Device Data
Freescale Semiconductor, Inc.
7
136–174 MHz VHF BROADBAND REFERENCE CIRCUIT
Zo = 25 
f = 135 MHz
Zsource
f = 175 MHz
f = 135 MHz
f = 175 MHz
Zload
Zsource

Zload

135
4.81 + j11.90
7.48 – j3.90
140
5.82 + j13.00
7.70 – j3.87
145
7.20 + j14.00
7.90 – j3.96
150
9.40 + j14.99
8.12 – j4.18
155
12.60 + j15.10
8.21 – j4.53
160
16.80 + j13.17
8.17 – j4.98
165
19.37 + j7.27
7.95 – j5.45
170
16.05 + j0.81
7.56 – j5.90
175
10.05 – j0.70
7.03 – j6.25
f
MHz
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
50 
Input
Matching
Network
= Test circuit impedance as measured from
drain to ground.
Output
Matching
Network
Device
Under
Test
Zsource
50 
Zload
Figure 8. VHF Broadband Series Equivalent Source and Load Impedance — 136–174 MHz
AFT05MS003N
8
RF Device Data
Freescale Semiconductor, Inc.
350–520 MHz UHF BROADBAND REFERENCE CIRCUIT
Table 10. 350–520 MHz UHF Broadband Performance (In Freescale UHF Broadband Reference Circuit,
50 ohm system) VDD = 7.5 Volts, IDQ = 50 mA, TA = 25C, CW
Frequency
(MHz)
Pin
(dBm)
Gps
(dB)
D
(%)
Pout
(W)
350
20.0
15.5
59.0
3.8
435
20.0
15.1
73.0
3.2
520
20.0
15.2
69.6
3.3
Table 11. Load Mismatch/Ruggedness (In Freescale UHF Broadband Reference Circuit)
Frequency
(MHz)
Signal
Type
435
CW
VSWR
> 65:1 at all
Phase Angles
Pin
(dBm)
Test Voltage, VDD
Result
23.0
9.0
No Device
Degradation
AFT05MS003N
RF Device Data
Freescale Semiconductor, Inc.
9
350–520 MHz UHF BROADBAND REFERENCE CIRCUIT — 0.83  1.86 (2.1 cm  4.7 cm)
J1
B1
C1
C2
C12
C11
R1
C5
L1
B2
C7
C6
L5
C8
L3
C3
R2
L2
Q1
C10
C9
L4
L6
C4
R3
D70894
AFT05MS003N Rev. 0 (350–520 MHz)
Figure 9. AFT05MS003N UHF Broadband Reference Circuit Component Layout — 350–520 MHz
Table 12. AFT05MS003N UHF Broadband Reference Circuit Component Designations and Values — 350–520 MHz
Part
Description
Part Number
Manufacturer
B1, B2
RF Beads
2743019447
Fair-Rite
C1, C8, C12
100 pF Chip Capacitors
ATC100A101JT150XT
ATC
C2
9.0 pF Chip Capacitor
GQM2195C2E9R0BB12D
Murata
C3
10 pF Chip Capacitor
GQM2195C2E100FB12D
Murata
C4, C9
39 pF Chip Capacitors
GQM2195C2E390GB12D
Murata
C5
100 pF Chip Capacitor
GQM2195C2E101GB12D
Murata
C6
1.0 F Chip Capacitor
GRM31CR72A105KA01L
Murata
C7
10 F Chip Capacitor
GRM31CR61H106KA12L
Murata
C10
15 pF Chip Capacitor
GQM2195C2E150FB12D
Murata
C11
3.9 pF Chip Capacitor
GQM2195C2E3R9BB12D
Murata
J1
Right-Angle Breakaway Headers (3 pins)
22-28-8360
Molex
L1
2.2 nH Inductor
L06032E2CGS
AVX
L2, L5
6.8 nH Inductors
ATC0805WL6R8
ATC
L3
19 nH Inductor
0806SQ19N
Coilcraft
L4
5.6 nH Inductor
L08055R6CEW
AVX
L6
1.8 nH Inductor
L08051E8CGS
AVX
Q1
RF Power LDMOS Transistor
AFT05MS003NT1
Freescale
R1, R2
22 , 1/10 W Chip Resistor
RR1220Q-220-D
Susumu
R3
1.5  1/10 W Chip Resistor
RC1206FR-071R5L
Yageo
PCB
0.020, r = 4.8, FR4 (S--1000)
D70894
MTL
AFT05MS003N
10
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS — 350–520 MHz UHF BROADBAND
REFERENCE CIRCUIT
20
Gps, POWER GAIN (dB)
75
D
18
65
17
55
16
45
15
5
Gps
14
13
12
11
350
VDD = 7.5 Vdc
Pin = 20.0 dBm
IDQ = 50 mA
370
390
4
3
Pout
410
430
450
Pout, OUTPUT
POWER (WATTS)
19
D, DRAIN
EFFICIENCY (%)
85
2
470
490
1
530
510
f, FREQUENCY (MHz)
Figure 10. Power Gain, Drain Efficiency and Output Power
versus Frequency at a Constant Pin
5
f = 435 MHz, VDD = 7.5 Vdc
Pout, OUTPUT POWER (WATTS)
Pout, OUTPUT POWER (WATTS)
4.5
4
3.5
Pin = 20.0 dBm
3
Pin = 17.0 dBm
2.5
2
1.5
1
0.5
0
0
Detail A
1
1.5
2
2.5
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
3.5
3
f = 435 MHz, VDD = 7.5 Vdc
Pin = 20.0 dBm
Pin = 17.0 dBm
1
1.5
1.3
1.8
2
2.3
2.5
VGS, GATE--SOURCE VOLTAGE (VOLTS)
4
Detail A
VGS, GATE--SOURCE VOLTAGE (VOLTS)
25
70
D
23
Gps, POWER GAIN (dB)
90
435 MHz
350 MHz
21
19
350 MHz
17
15
Gps
50
520 MHz
30
10
520 MHz
5
4
435 MHz
13
3
11
Pout
9
7
0
20
350 MHz
40
60
435 MHz 520 MHz
VDD = 7.5 Vdc
IDQ = 50 mA
80
100 120
140 160 180
2
1
0
200 220
Pout, OUTPUT
POWER (WATTS)
27
D, DRAIN
EFFICIENCY (%)
Figure 11. Output Power versus Gate--Source Voltage
Pin, INPUT POWER (mW)
Figure 12. Power Gain, Drain Efficiency and Output
Power versus Input Power and Frequency
AFT05MS003N
RF Device Data
Freescale Semiconductor, Inc.
11
350–520 MHz UHF BROADBAND REFERENCE CIRCUIT
f = 520 MHz
Zo = 10 
Zsource
f = 520 MHz
f = 350 MHz
Zload
f = 350 MHz
f
MHz
Zsource

Zload

350
6.90 + j6.70
4.89 + j4.10
360
7.22 + j6.96
4.95 + j4.48
370
7.60 + j7.15
5.04 + j4.83
380
7.94 + j7.62
5.15 + j5.14
390
8.34 + j7.66
5.28 + j5.42
400
8.65 + j7.61
5.44 + j5.65
410
8.97 + j7.37
5.58 + j5.82
420
9.08 + j7.06
5.73 + j5.90
430
8.91 + j6.73
5.86 + j5.95
440
8.63 + j6.34
5.94 + j5.90
450
8.14 + j6.04
5.95 + j5.81
460
7.49 + j5.89
5.87 + j5.66
470
6.77 + j5.95
5.68 + j5.51
480
6.05 + j6.21
5.39 + j5.39
490
5.38 + j6.64
5.03 + j5.33
500
4.80 + j7.20
4.60 + j5.35
510
4.30 + j7.86
4.16 + j5.47
520
3.94 + j8.57
3.68 + j5.71
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
50 
Input
Matching
Network
= Test circuit impedance as measured from
drain to ground.
Output
Matching
Network
Device
Under
Test
Zsource
50 
Zload
Figure 13. UHF Broadband Series Equivalent Source and Load Impedance — 350–520 MHz
AFT05MS003N
12
RF Device Data
Freescale Semiconductor, Inc.
520 MHz NARROWBAND PRODUCTION TEST FIXTURE — 3  5 (7.62 cm  12.7 cm)
C3
C1
C10
C2
C12
C9
C4
C7
R6
C5
C15
C11
B1
C6
R1
R2
R3
R4
R5
L1
C13
C16
L2
C8
C14
D74527
AFT05MS003N
Rev. 0
Figure 14. AFT05MS003N Narrowband Production Test Circuit Component Layout — 520 MHz
Table 13. AFT05MS003N Narrowband Production Test Circuit Component Designations and Values — 520 MHz
Part
Description
Part Number
Manufacturer
B1
Short RF Bead
2743019447
Fair--Rite
C1
22 F, 35 V Tantalum Capacitor
T491X226K035AT
Kemet
C2, C11
0.1 F Chip Capacitors
CDR33BX104AKWS
Kemet
C3, C10
0.01 F Chip Capacitors
C0805C103K5RAC
Kemet
C4, C9
180 pF Chip Capacitors
ATC100B181JT300XT
ATC
C5
68 pF Chip Capacitor
ATC100B680JT500XT
ATC
C6, C7
18 pF Chip Capacitors
ATC100B180JT500XT
ATC
C8
4.7 pF Chip Capacitor
ATC100B4R7JT500XT
ATC
C12
330 F, 35 V Electrolytic Capacitor
MCGPR35V337M10X16--RH
Multicomp
C13
13 pF Chip Capacitor
ATC100B130JT500XT
ATC
C14
16 pF Chip Capacitor
ATC100B160JT500XT
ATC
C15
3.3 pF Chip Capacitor
ATC100B3R3JT500XT
ATC
C16
6.8 pF Chip Capacitor
ATC100B6R8CT500XT
ATC
L1
8 nH, 3 Turn Inductor
A03TKLC
Coilcraft
L2
5 nH, 2 Turn Inductor
A02TKLC
Coilcraft
R1, R2, R3, R4, R5, R6
3.9 , 1/4 W Chip Resistors
RC1206FR--073R9L
Yageo
PCB
Rogers RO4350, 0.030, r = 3.66
D74527
MTL
AFT05MS003N
RF Device Data
Freescale Semiconductor, Inc.
13
TYPICAL CHARACTERISTICS — 520 MHz NARROWBAND
PRODUCTION TEST FIXTURE
5
Pout, OUTPUT POWER (WATTS)
VDD = 7.5 Vdc, f = 520 MHz
4
Pin = 14.0 dBm
3
Pin = 11.0 dBm
2
1
0
1.5
1
2.5
2
3
3.5
4
VGS, GATE--SOURCE VOLTAGE (VOLTS)
Figure 15. Output Power versus Gate--Source Voltage
90
24
80
Gps
18
70
15
60
12
50
9
40
D
6
30
VDD = 7.5 Vdc, IDQ = 100 mA
f = 520 MHz
3
Pout
0
80
40
0
120
20
D, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
Pout, OUTPUT POWER (WATTS)
21
10
160
Pin, INPUT POWER (mW)
Figure 16. Power Gain, Output Power and Drain
Efficiency versus Input Power
f
MHz
Zsource

Zload

520
1.86 + j4.46
4.30 + j3.43
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
50 
Input
Matching
Network
= Test circuit impedance as measured from
drain to ground.
Output
Matching
Network
Device
Under
Test
Zsource
50 
Zload
Figure 17. Narrowband Series Equivalent Source and Load Impedance — 520 MHz
AFT05MS003N
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RF Device Data
Freescale Semiconductor, Inc.
1.90
3.00
2X
45
4.35
2X
1.25
3X
0.70
0.85
2X
1.50
Figure 18. PCB Pad Layout for SOT--89A
AFT503
AWLYWZ
Figure 19. Product Marking
AFT05MS003N
RF Device Data
Freescale Semiconductor, Inc.
15
PACKAGE DIMENSIONS
Pin 1. Drain
2. Gate
3. Source
AFT05MS003N
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RF Device Data
Freescale Semiconductor, Inc.
AFT05MS003N
RF Device Data
Freescale Semiconductor, Inc.
17
AFT05MS003N
18
RF Device Data
Freescale Semiconductor, Inc.
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
 AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
 EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
 Electromigration MTTF Calculator
 RF High Power Model
 .s2p File
Development Tools
 Printed Circuit Boards
To Download Resources Specific to a Given Part Number:
1. Go to http://www.freescale.com/rf
2. Search by part number
3. Click part number link
4. Choose the desired resource from the drop down menu
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
0
Aug. 2015
Description
 Initial Release of Data Sheet
AFT05MS003N
RF Device Data
Freescale Semiconductor, Inc.
19
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E 2015 Freescale Semiconductor, Inc.
AFT05MS003N
Document Number: AFT05MS003N
Rev. 0, 8/2015
20
RF Device Data
Freescale Semiconductor, Inc.
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