Data Sheet

Freescale Semiconductor
Technical Data
Document Number: MMRF5300N
Rev. 0, 5/2016
RF Power GaN on SiC Transistor
Depletion Mode HEMT
MMRF5300N
This 60 W GaN RF power transistor is optimized for wideband pulse
operation from 2700 to 3500 MHz and includes input matching for extended
bandwidth performance. With its high gain and ruggedness, this device is
ideally suited for S--Band radar applications.
2700–3500 MHz, 60 W PEAK, 50 V
WIDEBAND RF POWER GaN
ON SiC TRANSISTOR
Typical Wideband Performance: In 2700–3500 MHz reference circuit,
VDD = 50 Vdc, IDQ = 60 mA, TA = 25°C
Frequency
(MHz)
2700–3500
Signal Type
Pulse (300 μsec, 20%
Duty Cycle)
Pout
(W)
Gps
(dB)
ηD
(%)
60 Peak
15.0
51.0
Typical Narrowband Performance: VDD = 50 Vdc, IDQ = 70 mA, TA = 25°C
Frequency
(MHz)
3500
Signal Type
Pulse (300 μsec, 20%
Duty Cycle)
Pout
(W)
Gps
(dB)
ηD
(%)
60 Peak
17.0
61.5
OM--270--2
PLASTIC
Load Mismatch/Ruggedness
Frequency
(MHz)
Signal
Type
3500 (1)
Pulse
(300 μsec,
20% Duty
Cycle)
VSWR
Pin
(W)
Test
Voltage
> 10:1 at All
Phase
Angles
2.4 Peak
(3 dB
Overdrive)
50
Result
No Device
Degradation
1 Drain
Gate 2
1. Measured in 3500 MHz narrowband test circuit.
Features
•
•
•
•
•
2700–3500 MHz operation
Plastic package enables improved thermal resistance
Advanced GaN on SiC, offering high power density
Input matched for extended wideband performance
High ruggedness: > 10:1 VSWR
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistor.
Figure 1. Pin Connections
Applications
• Ideal for 2700–3500 MHz, military and civil S--Band radar pulsed applications
© Freescale Semiconductor, Inc., 2016. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
MMRF5300N
1
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain--Source Voltage
Rating
VDSS
125
Vdc
Gate--Source Voltage
VGS
–8, 0
Vdc
Operating Voltage
VDD
0 to +50
Vdc
Maximum Forward Gate Current @ TC = 25°C
IGMAX
9
mA
Storage Temperature Range
Tstg
– 65 to +150
°C
Case Operating Temperature Range
TC
– 55 to +150
°C
Operating Junction Temperature Range (1)
TJ
– 55 to +225
°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
105.3
0.53
W
W/°C
Symbol
Value (2)
Unit
ZθJC
0.52
°C/W
Table 2. Thermal Characteristics
Characteristic
Thermal Impedance, Junction to Case
Pulse: Case Temperature 74°C, 60 W Peak, 300 μsec Pulse Width,
20% Duty Cycle, 50 Vdc, IDQ = 70 mA, 3500 MHz
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
1B, passes 500 V
Machine Model (per EIA/JESD22--A115)
A, passes 100 V
Charge Device Model (per JESD22--C101)
IV, passes 1200 V
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
Package Peak Temperature
Unit
3
260
°C
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
V(BR)DSS
150
—
—
Vdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 11 mAdc)
VGS(th)
–3.8
–3.0
–2.3
Vdc
Gate Quiescent Voltage
(VDS = 50 Vdc, ID = 70 mAdc, Measured in Functional Test)
VGS(Q)
–3.3
–3.0
–2.3
Vdc
IGSS
–3.4
—
—
mAdc
Reverse Transfer Capacitance
(VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = –4 Vdc)
Crss
—
0.5
—
pF
Output Capacitance
(VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = –4 Vdc)
Coss
—
4.4
—
pF
Input Capacitance (3)
(VDS = 50 Vdc, VGS = –4 Vdc ± 30 mV(rms)ac @ 1 MHz)
Ciss
—
23
—
pF
Characteristic
Off Characteristics
Drain--Source Breakdown Voltage
(VGS = –8 Vdc, ID = 11 mAdc)
On Characteristics
Gate--Source Leakage Current
(VDS = 0 Vdc, VGS = –5 Vdc)
Dynamic Characteristics
1. Continuous use at maximum temperature will affect MTTF.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.
3. Part internally input matched.
(continued)
MMRF5300N
2
RF Device Data
Freescale Semiconductor, Inc.
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 70 mA, Pout = 60 W Peak (12 W Avg.), f = 3500 MHz,
300 μsec Pulse Width, 20% Duty Cycle. [See note on correct biasing sequence.]
Gps
16.2
17.0
Drain Efficiency
ηD
59.5
61.5
—
%
Input Return Loss
IRL
—
–14
–9
dB
Power Gain
18.0
dB
Load Mismatch/Ruggedness (In Freescale Test Fixture, 50 ohm system) IDQ = 70 mA
Frequency
(MHz)
Signal
Type
3500
Pulse (300 μsec,
20% Duty Cycle)
VSWR
> 10:1 at All Phase Angles
Pin
(W)
Test Voltage, VDD
Result
50
No Device Degradation
2.4 Peak
(3 dB Overdrive)
Table 6. Ordering Information
Device
MMRF5300NR5
Tape and Reel Information
R5 Suffix = 50 Units, 24 mm Tape Width, 7--inch Reel
Package
OM--270--2
NOTE: Correct Biasing Sequence for GaN Depletion Mode Transistors
Turning the device ON
1. Set VGS to the pinch--off (VP) voltage, typically –5 V
2. Turn on VDS to nominal supply voltage (50 V)
3. Increase VGS until IDS current is attained
4. Apply RF input power to desired level
Turning the device OFF
1. Turn RF power off
2. Reduce VGS down to VP, typically –5 V
3. Reduce VDS down to 0 V (Adequate time must be allowed
for VDS to reduce to 0 V to prevent severe damage to device.)
4. Turn off VGS
MMRF5300N
RF Device Data
Freescale Semiconductor, Inc.
3
3500 MHz NARROWBAND PRODUCTION TEST FIXTURE — 3.0″ × 5.0″ (7.6 cm × 12.7 cm)
R2
C8
C7
+
C4
C3
C2
C5
C6
CUT OUT AREA
R1
C1
C9
C10
MMRF5300N
Rev. 1
D74772
Figure 2. MMRF5300N Narrowband Test Circuit Component Layout — 3500 MHz
Table 7. MMRF5300N Narrowband Test Circuit Component Designations and Values — 3500 MHz
Part
Description
Part Number
Manufacturer
C1
18 pF Chip Capacitor
ATC600F180JT250XT
ATC
C2, C5, C10
12 pF Chip Capacitors
ATC600F120JT250XT
ATC
C3
10 μF Chip Capacitor
GRM31CR61H106KA12L
Murata
C4
47 μF, 16 V Tantalum Capacitor
T491D476K016AT
Kemet
C6, C7
2.2 μF Chip Capacitors
GRM32ER72A225KA35L
Murata
C8
220 μF, 100 V Electrolytic Capacitor
EEV--FK2A221M
Panasonic--ECG
C9
0.4 pF Chip Capacitor
ATC600F0R4BT250XT
ATC
R1
2.7 Ω, 1/4 Chip Resistor
CRCW12062R7FKEA
Vishay
R2
0 Ω, 5 A Chip Resistor
CRCW12100000Z0EA
Vishay
PCB
Rogers RO4350B, 0.030″, εr = 3.66
D74772
MTL
MMRF5300N
4
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS — 3500 MHz
PRODUCTION TEST FIXTURE
70
21
60
20
50
17
Gps
16
40
15
30
14
20
13
10
12
0
10
20
30
40
50
60
70
80
0
90
17
13
VDD = 50 Vdc, f = 3500 MHz
Pulse Width = 300 μsec, Duty Cycle = 20%
0
10
30
20
40
50
60
70
80
90
Pout, OUTPUT POWER (WATTS) PEAK
Figure 3. Power Gain and Drain Efficiency
versus Output Power
Figure 4. Power Gain versus Output Power and
Quiescent Drain Current
90
80
16
15
50 V
14
13
45 V
12
40 V
11
35 V
10
IDQ = 70 mA, f = 3500 MHz
Pulse Width = 300 μsec
Duty Cycle = 20%
30 V
VDD = 25 V
0
70 mA
15
18
8
150 mA
16
19
9
IDQ = 500 mA
18
Pout, OUTPUT POWER (WATTS) PEAK
17
Gps, POWER GAIN (dB)
19
14
Pout, OUTPUT POWER (WATTS) PEAK
Gps, POWER GAIN (dB)
18
ηD
Gps, POWER GAIN (dB)
VDD = 50 Vdc, IDQ = 70 mA, f = 3500 MHz
Pulse Width = 300 μsec, Duty Cycle = 20%
ηD, DRAIN EFFICIENCY (%)
19
10
20
30
40
50
60
70
80
90
VDD = 50 Vdc, IDQ = 70 mA, f = 3500 MHz
Pulse Width = 300 μsec, Duty Cycle = 20%
70
–55_C
TC = 25_C
60
85_C
50
40
30
20
10
0
15
20
25
35
30
40
Pin, INPUT POWER (dBm) PEAK
Pout, OUTPUT POWER (WATTS) PEAK
Figure 5. Power Gain versus Output Power
and Drain Voltage
f
(MHz)
P1dB
(W)
P3dB
(W)
3500
64.5
81.2
Figure 6. Output Power versus Input Power
19
Gps
TC = 25_C
60
–55_C
85_C
17
16
ηD
15
50
40
25_C
85_C
30
–55_C
14
13 VDD = 50 Vdc, IDQ = 70 mA, f = 3500 MHz
Pulse Width = 300 μsec, Duty Cycle = 20%
12
10
20
30
40
50
60
20
ηD, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
18
70
10
70
80
0
90
Pout, OUTPUT POWER (WATTS) PEAK
Figure 7. Power Gain and Drain Efficiency versus
Output Power
MMRF5300N
RF Device Data
Freescale Semiconductor, Inc.
5
PACKAGE DIMENSIONS
MMRF5300N
6
RF Device Data
Freescale Semiconductor, Inc.
MMRF5300N
RF Device Data
Freescale Semiconductor, Inc.
7
MMRF5300N
8
RF Device Data
Freescale Semiconductor, Inc.
PRODUCT DOCUMENTATION
Refer to the following resources to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
To Download Resources Specific to a Given Part Number:
1.
2.
3.
4.
Go to http://www.nxp.com/RF
Search by part number
Click part number link
Choose the desired resource from the drop down menu
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
0
May 2016
Description
• Initial Release of Data Sheet
MMRF5300N
RF Device Data
Freescale Semiconductor, Inc.
9
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E 2016 Freescale Semiconductor, Inc.
MMRF5300N
Document Number: MMRF5300N
Rev. 0, 5/2016
10
RF Device Data
Freescale Semiconductor, Inc.