NSR0530H Product Preview Schottky Barrier Diode Schottky barrier diodes are optimized for very low forward voltage drop and low leakage current and are used in a wide range of dc−dc converter, clamping and protection applications in portable devices. NSR0530H in a SOD−323 miniature package enables designers to meet the challenging task of achieving higher efficiency and meeting reduced space requirements. www.onsemi.com 30 V SCHOTTKY BARRIER DIODE Features • • • • • • Very Low Forward Voltage Drop − 370 mV @ 100 mA Low Reverse Current − 1.4 mA @ 10 V VR 500 mA of Continuous Forward Current Very High Switching Speed Low Capacitance − CT = 10 pF This is a Pb−Free Device 1 CATHODE LCD and Keypad Backlighting Camera Photo Flash Buck and Boost dc−dc Converters Reverse Voltage and Current Protection Clamping & Protection 1 AK = Specific Device Code M = Month Code Mobile Handsets MP3 Players Digital Camera and Camcorders Notebook PCs & PDAs GPS ORDERING INFORMATION Device NSR0530HT1G MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 30 V Forward Current (DC) IF 500 mA ESD Rating: Human Body Model Machine Model AK M SOD−323 CASE 477 STYLE 1 Markets • • • • • MARKING DIAGRAM 2 Typical Applications • • • • • 2 ANODE ESD Package Shipping† SOD−323 (Pb−Free) 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Class 3B Class C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. This document contains information on a product under development. ON Semiconductor reserves the right to change or discontinue this product without notice. © Semiconductor Components Industries, LLC, 2015 June, 2015 − Rev. P1 1 Publication Order Number: NSR0530H/D NSR0530H THERMAL CHARACTERISTICS Characteristic Thermal Resistance Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25°C Thermal Resistance Junction−to−Ambient (Note 2) Total Power Dissipation @ TA = 25°C Symbol Junction and Storage Temperature Range Min Typ Max Unit RqJA PD 740 160 °C/W mW RqJA PD 460 270 °C/W mW TJ, Tstg −55 to +150 °C Typ Max Unit 1.4 24 10 200 0.37 0.46 0.62 1. Mounted onto a 4 in square FR−4 board 10 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state. 2. Mounted onto a 4 in square FR−4 board 1 in sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min mA Reverse Leakage (VR = 10 V) (VR = 30 V) IR Forward Voltage (IF = 10 mA) (IF = 100 mA) (IF = 500 mA) VF 0.28 0.37 0.52 Total Capacitance (VR = 1.0 V, f = 1 MHz) CT 10 10,000 pF 1,000,000 100,000 Ir, REVERSE CURRENT (mA) 1000 IF, FORWARD CURRENT (mA) V 100 10 125°C 1 0.1 85°C 0.01 0.001 0 0.1 −40°C 125°C 1000 85°C 100 25°C 10 −40°C 1 0.1 0.01 0.001 0.2 0.3 0.5 0.4 0 0.6 5 10 15 20 25 VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 1. Forward Voltage Figure 2. Leakage Current 20 CT, TOTAL CAPACITANCE (pF) 25°C 10,000 18 TA = 25°C 16 14 12 10 8 6 4 2 0 0 5 10 15 20 25 VR, REVERSE VOLTAGE (V) Figure 3. Total Capacitance www.onsemi.com 2 30 35 30 35 NSR0530H PACKAGE DIMENSIONS SOD−323 CASE 477−02 ISSUE H NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. LEAD THICKNESS SPECIFIED PER L/F DRAWING WITH SOLDER PLATING. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. 5. DIMENSION L IS MEASURED FROM END OF RADIUS. HE D b 1 2 E MILLIMETERS DIM MIN NOM MAX A 0.80 0.90 1.00 A1 0.00 0.05 0.10 A3 0.15 REF b 0.25 0.32 0.4 C 0.089 0.12 0.177 D 1.60 1.70 1.80 E 1.15 1.25 1.35 L 0.08 HE 2.30 2.50 2.70 A3 A C NOTE 3 L NOTE 5 INCHES NOM MAX 0.035 0.040 0.002 0.004 0.006 REF 0.010 0.012 0.016 0.003 0.005 0.007 0.062 0.066 0.070 0.045 0.049 0.053 0.003 0.090 0.098 0.105 MIN 0.031 0.000 A1 SOLDERING FOOTPRINT* 0.63 0.025 0.83 0.033 1.60 0.063 2.85 0.112 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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