NSR1030QMU D

NSR1030QMUTAG
1A, 30V Schottky Full Bridge
These full bridge Schottky barrier diodes are designed for the
rectification of the high speed signal of wireless charging. The
NSR1030QMUTAG has a very low forward voltage that will reduce
conduction loss. It is housed in a UDFN 3.0 x 3.0 x 0.5 mm package
that is ideal for space constrained wireless applications.
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Features
• Extremely Fast Switching Speed
• Low Forward Voltage − 0.49 V (Typ) @ IF = 1 A
• These Devices are Pb−Free, Halogen Free and are RoHS Compliant
MARKING
DIAGRAM
1
Typical Applications
• Low Voltage Full Bridge Rectification & Wireless Charging
Symbol
Value
Unit
Reverse Voltage
VR
30
V
Forward Current (DC)
IF
1.0
A
Forward Current Surge Peak
(60 Hz, 1 cycle)
IFSM
12
A
Non−Repetitive Peak Forward Current
(Square Wave, TJ = 25°C prior to surge)
t = 1 ms
t = 1 ms
t=1s
IFSM
1030
= Specific Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
A
PIN CONNECTIONS
40
10
3.0
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. All specifications pertain to a single diode.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD
(Note 2)
1.80
W
18
mW/°C
Thermal Resistance Junction to Ambient
RqJA
(Note 2)
55.5
°C/W
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD
(Note 3)
0.70
W
7.0
mW/°C
Thermal Resistance Junction to Ambient
RqJA
(Note 3)
142
°C/W
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD
(Note 4)
0.80
W
8.0
mW/°C
Thermal Resistance Junction to Ambient
RqJA
(Note 4)
125
°C/W
Junction Temperature
TJ
+125
°C
Storage Temperature Range
Tstg
−55 to
+150
°C
DEVICE SCHEMATIC
ORDERING INFORMATION
2. 4 Layer JEDEC JESD51.7 FR−4 @ 10 mm2, 1 oz. copper trace, still air.
3. Single Layer JEDEC JESD51.3 FR−4 @ 100 mm2, 1 oz. copper trace, still air.
4. Single Layer JEDEC JESD51.3 FR−4 @ 100 mm2, 2 oz. copper trace, still air.
© Semiconductor Components Industries, LLC, 2015
September, 2015 − Rev. 0
Device
Package
Shipping†
NSR1030QMUTAG
UDFN4
(Pb−Free)
3000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NSR1030QMU/D
M
MAXIMUM RATINGS (TJ = 125°C unless otherwise noted) (Note 1)
Rating
1030
AYWWG
G
UDFN4 3x3
CASE 517DB
NSR1030QMUTAG
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Note 5)
Symbol
Min
Typ
Max
Unit
V(BR)
30
−
−
V
Reverse Leakage (VR = 30 V)
IR
−
4.0
20
mA
Forward Voltage (IF = 0.5 A)
VF
−
0.43
0.49
V
Forward Voltage (IF = 1.0 A)
VF
−
0.49
0.60
V
Reverse Recovery Time
(IF = IR = 10 mA, IR(REC) = 1.0 mA)
trr
−
25
−
ns
Input Capacitance (pins 1 to 3) (VR = 1.0 V, f = 1.0 MHz)
CT
−
70
−
pF
Characteristic
Reverse Breakdown Voltage (IR = 1.0 mA)
5. All specifications pertain to a single diode.
820 W
+10 V
2.0 k
100 mH
tr
0.1 mF
IF
tp
t
IF
trr
10%
t
0.1 mF
90%
D.U.T.
50 W OUTPUT
PULSE
GENERATOR
50 W INPUT
SAMPLING
OSCILLOSCOPE
iR(REC) = 1.0 mA
IR
VR
INPUT SIGNAL
OUTPUT PULSE
(IF = IR = 10 mA; MEASURED
at iR(REC) = 1.0 mA)
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
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2
NSR1030QMUTAG
TYPICAL CHARACTERISTICS
IR, REVERSE CURRENT (mA)
1.0E−01
0.1
150°C
0.01
0.001
0.0
125°C
0.1
85°C
0.2
1.0E−03
125°C
1.0E−04
85°C
1.0E−05
1.0E−06
1.0E−08
1.0E−09
CI, INPUT CAPACITANCE (pF)
−55°C
1.0E−10
25°C
0.3
−55°C
0.4
0.5
1.0E−11
0
0.6
5
10
15
20
VR, REVERSE VOLTAGE (V)
Figure 1. Forward Voltage
Figure 2. Reverse Leakage
70
60
50
40
30
20
10
15
20
25
30
30
25
VF, FORWARD VOLTAGE (V)
TA = 25°C
5
25°C
1.0E−07
80
0
150°C
1.0E−02
IFSM, FORWARD SURGE MAX CURRENT (A)
IF, FORWARD CURRENT (A)
1
45
Based on square wave currents
TJ = 25°C prior to surge
40
35
30
25
20
15
10
5
0
0.001
0.01
0.1
1
10
100
VR, REVERSE VOLTAGE (V)
Tp, PULSE ON TIME (ms)
Figure 3. Input Capacitance
Figure 4. Forward Surge Current
1000
100
D = 0.5
0.2
10
0.1
r(t)
(°C/W)
0.05
0.02
1
0.01
SINGLE PULSE
0.1
0.000001
0.00001
0.0001
0.001
0.01
0.1
PULSE TIME (s)
Figure 5. Thermal Response
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3
1
10
100
1000
NSR1030QMUTAG
PACKAGE DIMENSIONS
UDFN4 3.0x3.0, 1.30P
CASE 517DB
ISSUE A
D
PIN ONE
INDICATOR
2X
0.10 C
2X
0.10 C
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED
TERMINAL AND IS MEASURED BETWEEN
0.05 AND 0.15 MM FROM THE TERMINAL TIP.
4. COPLANARITY APPLIES TO THE EXPOSED
PADS AS WELL AS THE TERMINALS.
5. POSITIONAL TOLERANCE APPLIES TO ALL
OF THE EXPOSED PADS.
A B
ÍÍ
ÍÍ
E
TOP VIEW
A
0.05 C
DIM
A
A1
A3
b
D
D2
D3
E
E2
E3
E4
e
F
F1
G
L
A3
A1
0.05 C
NOTE 4
C
SIDE VIEW
0.10
2X
D3
M
C A B
F
NOTE 5
D2
1
SEATING
PLANE
F1
2
1
2
4
3
E2
MILLIMETERS
MIN
MAX
0.45
0.55
0.00
0.05
0.13 REF
0.35
0.45
3.00 BSC
0.95
1.05
1.15
1.25
3.00 BSC
1.80
1.90
0.75
0.85
0.65
0.75
1.30 BSC
0.75 BSC
0.70 BSC
0.48 BSC
0.35
0.55
E3
E4
4X
4
0.10
3
L
4X
C A B
M
b
BOTTOM VIEW
G
NOTE 5
0.10
M
C A B
0.05
M
C
e/2
e
SUPPLEMENTAL
BOTTOM VIEW
NOTE 3
RECOMMENDED
SOLDERING FOOTPRINT*
1.30
PITCH
1.40
1.20
4X
2X
0.63
0.55
1.17
0.87
2.02 3.30
1.00 1
0.70
0.75
2X
0.50
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
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NSR1030QMU/D