NSR2030QMUTAG 2A, 30V Schottky Full Bridge These full bridge Schottky barrier diodes are designed for the rectification of the high speed signal of wireless charging. The NSR2030QMUTAG has a very low forward voltage that will reduce conduction loss. It is housed in a UDFN 3.5 x 3.5 x 0.5 mm package that is ideal for space constrained wireless applications. www.onsemi.com Features • Extremely Fast Switching Speed • Low Forward Voltage − 0.54 V (Typ) @ IF = 2 A • These Devices are Pb−Free, Halogen Free and are RoHS Compliant MARKING DIAGRAM 1 Typical Applications • Low Voltage Full Bridge Rectification & Wireless Charging Symbol Value Unit Reverse Voltage VR 30 V Forward Current (DC) IF 2.0 A Forward Current Surge Peak (60 Hz, 1 cycle) IFSM 12.5 A Non−Repetitive Peak Forward Current (Square Wave, TJ = 25°C prior to surge) t = 1 ms t = 1 ms t=1s IFSM 2030 = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) A PIN CONNECTIONS 40 10 3.0 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. All specifications pertain to a single diode. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR-5 Board TA = 25°C Derate above 25°C PD (Note 2) 2.08 W 20.8 mW/°C Thermal Resistance Junction to Ambient RqJA (Note 2) 48 °C/W Total Device Dissipation FR-5 Board TA = 25°C Derate above 25°C PD (Note 3) 0.75 W 7.6 mW/°C Thermal Resistance Junction to Ambient RqJA (Note 3) 132 °C/W Total Device Dissipation FR-5 Board TA = 25°C Derate above 25°C PD (Note 4) 0.87 W 8.8 mW/°C Thermal Resistance Junction to Ambient RqJA (Note 4) 114 °C/W Junction Temperature TJ +125 °C Storage Temperature Range Tstg −55 to +150 °C DEVICE SCHEMATIC ORDERING INFORMATION 2. 4 Layer JEDEC JESD51.7 FR−4 @ 10 mm2, 1 oz. copper trace, still air. 3. Single Layer JEDEC JESD51.3 FR−4 @ 100 mm2, 1 oz. copper trace, still air. 4. Single Layer JEDEC JESD51.3 FR−4 @ 100 mm2, 2 oz. copper trace, still air. © Semiconductor Components Industries, LLC, 2015 September, 2015 − Rev. 0 Device Package Shipping† NSR2030QMUTAG UDFN4 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NSR2030QMU/D M MAXIMUM RATINGS (TJ = 125°C unless otherwise noted) (Note 1) Rating 2030 AYWWG G UDFN4 3.5x3.5 CASE 517DA NSR2030QMUTAG ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Note 5) Symbol Min Typ Max Unit V(BR) 30 − − V Reverse Leakage (VR = 30 V) IR − 5.0 20 mA Forward Voltage (IF = 0.5 A) VF − 0.41 0.455 V Forward Voltage (IF = 1.0 A) VF − 0.46 0.55 V Forward Voltage (IF = 2.0 A) VF − 0.54 0.65 V Reverse Recovery Time (IF = IR = 10 mA, IR(REC) = 1.0 mA) trr − 34 − ns Input Capacitance (pins 1 to 3) (VR = 1.0 V, f = 1.0 MHz) CT − 102 − pF Characteristic Reverse Breakdown Voltage (IR = 1.0 mA) 5. All specifications pertain to a single diode. 820 W +10 V 2.0 k 100 mH tr 0.1 mF IF tp t IF trr 10% t 0.1 mF 90% D.U.T. 50 W OUTPUT PULSE GENERATOR 50 W INPUT SAMPLING OSCILLOSCOPE iR(REC) = 1.0 mA IR VR INPUT SIGNAL OUTPUT PULSE (IF = IR = 10 mA; MEASURED at iR(REC) = 1.0 mA) Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit www.onsemi.com 2 NSR2030QMUTAG TYPICAL CHARACTERISTICS IR, REVERSE CURRENT (mA) 1.0E−01 1 0.1 150°C 0.01 0.001 0.0 25°C 125°C 85°C 0.1 0.2 0.3 −55°C 0.4 0.5 0.6 1.0E−03 125°C 1.0E−04 85°C 1.0E−05 1.0E−07 CI, INPUT CAPACITANCE (pF) −55°C 1.0E−08 1.0E−09 1.0E−10 5 10 15 20 VR, REVERSE VOLTAGE (V) Figure 1. Forward Voltage Figure 2. Reverse Leakage 100 90 80 70 60 50 40 30 10 15 20 25 30 30 25 VF, FORWARD VOLTAGE (V) TA = 25°C 5 25°C 1.0E−06 110 0 150°C 1.0E−02 IFSM, FORWARD SURGE MAX CURRENT (A) IF, FORWARD CURRENT (A) 10 45 Based on square wave currents TJ = 25°C prior to surge 40 35 30 25 20 15 10 5 0 0.001 0.01 0.1 1 10 100 1000 Tp, PULSE ON TIME (ms) VR, REVERSE VOLTAGE (V) Figure 3. Input Capacitance Figure 4. Forward Surge Current 100 D = 0.5 10 0.2 r(t) (°C/W) 0.1 0.05 1 0.02 0.01 SINGLE PULSE 0.1 0.000001 0.00001 0.0001 0.001 0.01 0.1 PULSE TIME (s) Figure 5. Thermal Response www.onsemi.com 3 1 10 100 1000 NSR2030QMUTAG PACKAGE DIMENSIONS UDFN4 3.5x3.5, 1.55P CASE 517DA ISSUE A D PIN ONE INDICATOR 2X 0.10 C 2X 0.10 C NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.05 AND 0.15 MM FROM THE TERMINAL TIP. 4. COPLANARITY APPLIES TO THE EXPOSED PADS AS WELL AS THE TERMINALS. 5. POSITIONAL TOLERANCE APPLIES TO ALL OF THE EXPOSED PADS. A B ÍÍ ÍÍ E TOP VIEW A 0.05 C DIM A A1 A3 b D D2 D3 E E2 E3 e F G L A3 A1 0.05 C NOTE 4 C SIDE VIEW 0.10 2X D3 C A B M F NOTE 5 D2 1 SEATING PLANE F 2 1 2 E2 2X RECOMMENDED SOLDERING FOOTPRINT* E3 4 4X 0.10 3 L BOTTOM VIEW 4X M C A B NOTE 5 b 0.10 M C A B 0.05 M C NOTE 3 MILLIMETERS MIN MAX 0.45 0.55 0.00 0.05 0.13 REF 0.35 0.45 3.50 BSC 1.15 1.25 1.35 1.45 3.50 BSC 2.25 2.35 0.95 1.05 1.55 BSC 0.925 BSC 0.58 BSC 0.35 0.55 G 4 1.55 PITCH 1.60 3 e/2 e SUPPLEMENTAL BOTTOM VIEW 1.40 4X 2X 0.63 0.56 0.75 2.52 3.80 1.17 1.20 1 0.925 0.925 2X 0.50 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. 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