MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS™P6 600VCoolMOS™P6PowerTransistor IPx60R099P6 DataSheet Rev.2.1 Final PowerManagement&Multimarket 600VCoolMOS™P6PowerTransistor IPW60R099P6,IPP60R099P6,IPA60R099P6 1Description TO-247 TO-220 CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™P6seriescombinesthe experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. TheoffereddevicesprovideallbenefitsofafastswitchingSJMOSFET whilenotsacrificingeaseofuse.Extremelylowswitchingandconduction lossesmakeswitchingapplicationsevenmoreefficient,morecompact, lighterandcooler. Features •IncreasedMOSFETdv/dtruggedness •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •Veryhighcommutationruggedness •Easytouse/drive •Pb-freeplating,Halogenfreemoldcompound •QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 andJESD22) TO-220FP tab Drain Pin 2, Tab Gate Pin 1 Source Pin 3 Applications PFCstages,hardswitchingPWMstagesandresonantswitchingstages fore.g.PCSilverbox,Adapter,LCD&PDPTV,Lighting,Server,Telecom andUPS. Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 650 V RDS(on),max 99 mΩ Qg.typ 70 nC ID,pulse 109 A Eoss@400V 8.8 µJ Body diode di/dt 300 A/µs Type/OrderingCode Package IPW60R099P6 PG-TO 247 IPP60R099P6 PG-TO 220 IPA60R099P6 PG-TO 220 FullPAK Final Data Sheet Marking 6R099P6 2 RelatedLinks see Appendix A Rev.2.1,2015-05-18 600VCoolMOS™P6PowerTransistor IPW60R099P6,IPP60R099P6,IPA60R099P6 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Final Data Sheet 3 Rev.2.1,2015-05-18 600VCoolMOS™P6PowerTransistor IPW60R099P6,IPP60R099P6,IPA60R099P6 2Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Values Unit Note/TestCondition 37.9 24.0 A TC=25°C TC=100°C - 109 A TC=25°C - - 796 mJ ID=6.6A; VDD=50V; see table 10 EAR - - 1.21 mJ ID=6.6A; VDD=50V; see table 10 Avalanche current, repetitive IAR - - 6.6 A - MOSFET dv/dt ruggedness dv/dt - - 100 V/ns VDS=0...400V Gate source voltage (static) VGS -20 - 20 V static; Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz) Power dissipation (Non FullPAK) TO-220, TO-247 Ptot - - 278 W TC=25°C Power dissipation (FullPAK) TO-220FP Ptot - - 34 W TC=25°C Storage temperature Tstg -55 - 150 °C - Operating junction temperature Tj -55 - 150 °C - Mounting torque (Non FullPAK) TO-220, TO-247 - - - 60 Ncm M3 and M3.5 screws Mounting torque (FullPAK) TO-220FP - - - 50 Ncm M2.5 screws Continuous diode forward current IS - - 32.9 A TC=25°C Diode pulse current IS,pulse - - 109 A TC=25°C Reverse diode dv/dt3) dv/dt - - 15 V/ns VDS=0...400V,ISD<=IS,Tj=25°C see table 8 Maximum diode commutation speed dif/dt - - 300 A/µs VDS=0...400V,ISD<=IS,Tj=25°C see table 8 Insulation withstand voltage for TO-220FP VISO - - 2500 V Vrms,TC=25°C,t=1min Min. Typ. Max. ID - - Pulsed drain current2) ID,pulse - Avalanche energy, single pulse EAS Avalanche energy, repetitive 2) 1) Limited by Tj max. Maximum duty cycle D=0.75 Pulse width tp limited by Tj,max 3) IdenticallowsideandhighsideswitchwithidenticalRG 2) Final Data Sheet 4 Rev.2.1,2015-05-18 600VCoolMOS™P6PowerTransistor IPW60R099P6,IPP60R099P6,IPA60R099P6 3Thermalcharacteristics Table3Thermalcharacteristics(NonFullPAK)TO-220,TO-247 Parameter Symbol Thermal resistance, junction - case Values Unit Note/TestCondition Min. Typ. Max. RthJC - - 0.45 °C/W - Thermal resistance, junction - ambient RthJA - - 62 °C/W leaded Soldering temperature, wavesoldering only allowed at leads - - 260 °C 1.6mm (0.063 in.) from case for 10s Unit Note/TestCondition Tsold Table4Thermalcharacteristics(FullPAK)TO-220FP Parameter Symbol Thermal resistance, junction - case Values Min. Typ. Max. RthJC - - 3.65 °C/W - Thermal resistance, junction - ambient RthJA - - 80 °C/W leaded Soldering temperature, wavesoldering only allowed at leads - - 260 °C Final Data Sheet Tsold 5 1.6mm (0.063 in.) from case for 10s Rev.2.1,2015-05-18 600VCoolMOS™P6PowerTransistor IPW60R099P6,IPP60R099P6,IPA60R099P6 4Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table5Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 4.0 4.5 V VDS=VGS,ID=1.21mA - 10 5 - µA VDS=600,VGS=0V,Tj=25°C VDS=600,VGS=0V,Tj=150°C IGSS - - 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 0.089 0.232 0.099 - Ω VGS=10V,ID=14.5A,Tj=25°C VGS=10V,ID=14.5A,Tj=150°C Gate resistance RG - 1 - Ω f=1MHz,opendrain Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 600 - Gate threshold voltage V(GS)th 3.5 Zero gate voltage drain current IDSS Gate-source leakage current Table6Dynamiccharacteristics Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 3330 - pF VGS=0V,VDS=100V,f=1MHz Output capacitance Coss - 140 - pF VGS=0V,VDS=100V,f=1MHz Effective output capacitance, energy related1) Co(er) - 110 - pF VGS=0V,VDS=0...400V Effective output capacitance, time related2) Co(tr) - 495 - pF ID=constant,VGS=0V,VDS=0...400V Turn-on delay time td(on) - 20 - ns VDD=400V,VGS=13V,ID=18.1A, RG=1.7Ω;seetable9 Rise time tr - 10 - ns VDD=400V,VGS=13V,ID=18.1A, RG=1.7Ω;seetable9 Turn-off delay time td(off) - 50 - ns VDD=400V,VGS=13V,ID=18.1A, RG=1.7Ω;seetable9 Fall time tf - 5 - ns VDD=400V,VGS=13V,ID=18.1A, RG=1.7Ω;seetable9 Unit Note/TestCondition Table7Gatechargecharacteristics Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 20 - nC VDD=400V,ID=18.1A,VGS=0to10V Gate to drain charge Qgd - 24 - nC VDD=400V,ID=18.1A,VGS=0to10V Gate charge total Qg - 70 - nC VDD=400V,ID=18.1A,VGS=0to10V Gate plateau voltage Vplateau - 6.1 - V VDD=400V,ID=18.1A,VGS=0to10V 1) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V 2) Final Data Sheet 6 Rev.2.1,2015-05-18 600VCoolMOS™P6PowerTransistor IPW60R099P6,IPP60R099P6,IPA60R099P6 Table8Reversediodecharacteristics Parameter Symbol Diode forward voltage Values Unit Note/TestCondition - V VGS=0V,IF=18.1A,Tj=25°C 470 - ns VR=400V,IF=18.1A,diF/dt=100A/µs; see table 8 - 9 - µC VR=400V,IF=18.1A,diF/dt=100A/µs; see table 8 - 37 - A VR=400V,IF=18.1A,diF/dt=100A/µs; see table 8 Min. Typ. Max. VSD - 0.9 Reverse recovery time trr - Reverse recovery charge Qrr Peak reverse recovery current Irrm Final Data Sheet 7 Rev.2.1,2015-05-18 600VCoolMOS™P6PowerTransistor IPW60R099P6,IPP60R099P6,IPA60R099P6 5Electricalcharacteristicsdiagrams Diagram1:Powerdissipation(NonFullPAK) Diagram2:Powerdissipation(FullPAK) 300 40 35 250 30 200 Ptot[W] Ptot[W] 25 150 20 15 100 10 50 5 0 0 25 50 75 100 125 0 150 0 25 50 TC[°C] 75 100 125 150 TC[°C] Ptot=f(TC) Ptot=f(TC) Diagram3:Max.transientthermalimpedance(NonFullPAK) Diagram4:Max.transientthermalimpedance(FullPAK) 1 101 10 0.5 100 ZthJC[K/W] ZthJC[K/W] 100 0.5 10-1 0.2 0.2 0.1 0.05 10-1 0.02 0.1 0.05 0.01 0.02 0.01 -2 10 single pulse 10-5 10-4 10-3 10-2 10-1 10-2 single pulse 10-5 10-4 10-3 tp[s] 10-1 100 101 tp[s] ZthJC=f(tP);parameter:D=tp/T Final Data Sheet 10-2 ZthJC=f(tP);parameter:D=tp/T 8 Rev.2.1,2015-05-18 600VCoolMOS™P6PowerTransistor IPW60R099P6,IPP60R099P6,IPA60R099P6 Diagram5:Safeoperatingarea(NonFullPAK) Diagram6:Safeoperatingarea(FullPAK) 103 103 1 µs 1 µs 2 10 102 10 µs 10 µs 100 µs 100 µs 101 101 1 ms 1 ms ID[A] ID[A] 100 10 ms 100 DC 10 ms 10-1 10-1 10-2 10-2 10-3 DC 10-3 100 101 102 10-4 103 100 101 102 VDS[V] VDS[V] ID=f(VDS);TC=25°C;D=0;parameter:tp ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram7:Safeoperatingarea(NonFullPAK) Diagram8:Safeoperatingarea(FullPAK) 2 10 103 102 1 µs 1 µs 10 µs 10 µs 100 µs 100 µs 101 101 1 ms 1 ms 10 ms 100 10 ms 100 ID[A] ID[A] DC 10-1 10-1 10-2 10-2 10-3 DC 10-3 100 101 102 103 10-4 100 101 102 VDS[V] VDS[V] ID=f(VDS);TC=80°C;D=0;parameter:tp ID=f(VDS);TC=80°C;D=0;parameter:tp Final Data Sheet 9 103 Rev.2.1,2015-05-18 600VCoolMOS™P6PowerTransistor IPW60R099P6,IPP60R099P6,IPA60R099P6 Diagram9:Typ.outputcharacteristics Diagram10:Typ.outputcharacteristics 120 70 110 50 8V 80 7V 45 70 40 60 ID[A] ID[A] 8V 55 90 7V 35 30 50 6V 25 40 20 30 5.5 V 15 20 6V 10 5.5 V 5V 0 10 V 60 10 V 100 20 V 65 20 V 4.5 V 0 5 10 10 5V 5 15 0 20 4.5 V 0 5 10 VDS[V] 15 20 VDS[V] ID=f(VDS);Tj=25°C;parameter:VGS ID=f(VDS);Tj=125°C;parameter:VGS Diagram11:Typ.drain-sourceon-stateresistance Diagram12:Drain-sourceon-stateresistance 0.55 0.30 0.50 0.25 0.45 0.20 5.5 V 0.35 6V 6.5 V 0.30 7V RDS(on)[Ω] RDS(on)[Ω] 0.40 10 V 20 V 0.15 typ 98% 0.25 0.10 0.20 0.15 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 0.05 -50 -25 0 25 ID[A] RDS(on)=f(ID);Tj=125°C;parameter:VGS Final Data Sheet 50 75 100 125 150 Tj[°C] RDS(on)=f(Tj);ID=14.5A;VGS=10V 10 Rev.2.1,2015-05-18 600VCoolMOS™P6PowerTransistor IPW60R099P6,IPP60R099P6,IPA60R099P6 Diagram13:Typ.transfercharacteristics Diagram14:Typ.gatecharge 120 10 9 25 °C 100 8 120 V 480 V 7 80 VGS[V] ID[A] 6 60 150 °C 5 4 40 3 2 20 1 0 0 2 4 6 8 10 12 0 14 0 10 20 30 VGS[V] 40 50 60 70 80 Qgate[nC] ID=f(VGS);VDS=20V;parameter:Tj VGS=f(Qgate);ID=18.1Apulsed;parameter:VDD Diagram15:Forwardcharacteristicsofreversediode Diagram16:Avalancheenergy 2 10 800 700 600 101 IF[A] 125 °C EAS[mJ] 500 25 °C 400 300 100 200 100 10-1 0.0 0.5 1.0 1.5 2.0 0 25 50 VSD[V] 100 125 150 Tj[°C] IF=f(VSD);parameter:Tj Final Data Sheet 75 EAS=f(Tj);ID=6.6A;VDD=50V 11 Rev.2.1,2015-05-18 600VCoolMOS™P6PowerTransistor IPW60R099P6,IPP60R099P6,IPA60R099P6 Diagram17:Drain-sourcebreakdownvoltage Diagram18:Typ.capacitances 104 700 Ciss 680 660 103 620 C[pF] VBR(DSS)[V] 640 600 Coss 102 580 101 560 Crss 540 520 -75 -50 -25 0 25 50 75 100 125 150 175 100 0 100 Tj[°C] 200 300 400 500 VDS[V] VBR(DSS)=f(Tj);ID=1mA C=f(VDS);VGS=0V;f=1MHz Diagram19:Typ.Cossstoredenergy 10 9 8 7 Eoss[µJ] 6 5 4 3 2 1 0 0 100 200 300 400 500 VDS[V] Eoss=f(VDS) Final Data Sheet 12 Rev.2.1,2015-05-18 600VCoolMOS™P6PowerTransistor IPW60R099P6,IPP60R099P6,IPA60R099P6 6TestCircuits Table9Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform V ,I Rg1 VDS( peak) VDS VDS VDS trr IF Rg 2 tF tS dIF / dt QF IF t dIrr / dt trr =tF +tS Qrr = QF + QS Irrm Rg1 = Rg 2 IF 10 %Irrm QS Table10Switchingtimes Switching times test circuit for inductive load Switching times waveform VDS 90% VDS VGS VGS 10% td(on) ton tr td(off) tf toff Table11Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform V(BR)DS ID VDS VDS Final Data Sheet 13 ID VDS Rev.2.1,2015-05-18 600VCoolMOS™P6PowerTransistor IPW60R099P6,IPP60R099P6,IPA60R099P6 7PackageOutlines Figure1OutlinePG-TO247,dimensionsinmm/inches Final Data Sheet 14 Rev.2.1,2015-05-18 600VCoolMOS™P6PowerTransistor IPW60R099P6,IPP60R099P6,IPA60R099P6 Figure2OutlinePG-TO220,dimensionsinmm/inches Final Data Sheet 15 Rev.2.1,2015-05-18 600VCoolMOS™P6PowerTransistor IPW60R099P6,IPP60R099P6,IPA60R099P6 DIM A A1 A2 b b1 b2 b3 b4 c D D1 E e e1 N H L L1 Q MILLIMETERS MIN MAX 4.50 4.90 2.34 2.85 2.86 2.42 0.65 0.90 0.95 1.38 0.95 1.51 0.65 1.38 0.65 1.51 0.40 0.63 15.67 16.15 8.97 9.83 10.00 10.65 2.54 (BSC) INCHES MIN 0.177 0.092 0.095 0.026 0.037 0.037 0.026 0.026 0.016 0.617 0.353 0.394 DOCUMENT NO. Z8B00003319 SCALE 0 2.5 0 2.5 5mm EUROPEAN PROJECTION 0.100 (BSC) 5.08 3 28.70 12.78 2.83 2.95 3.15 MAX 0.193 0.112 0.113 0.035 0.054 0.059 0.054 0.059 0.025 0.636 0.387 0.419 0.200 3 29.75 13.75 3.45 3.38 3.50 1.130 0.503 0.111 0.116 0.124 1.171 0.541 0.136 0.133 0.138 ISSUE DATE 05-05-2014 REVISION 04 Figure3OutlinePG-TO220FullPAK,dimensionsinmm/inches Final Data Sheet 16 Rev.2.1,2015-05-18 600VCoolMOS™P6PowerTransistor IPW60R099P6,IPP60R099P6,IPA60R099P6 8AppendixA Table12RelatedLinks • IFXCoolMOSTMP6Webpage:www.infineon.com • IFXCoolMOSTMP6applicationnote:www.infineon.com • IFXCoolMOSTMP6simulationmodel:www.infineon.com • IFXDesigntools:www.infineon.com Final Data Sheet 17 Rev.2.1,2015-05-18 600VCoolMOS™P6PowerTransistor IPW60R099P6,IPP60R099P6,IPA60R099P6 RevisionHistory IPW60R099P6, IPP60R099P6, IPA60R099P6 Revision:2015-05-18,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2014-03-07 Release of final version 2.1 2015-05-18 Rdson max change from 105 to 99mOhm WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: [email protected] Publishedby InfineonTechnologiesAG 81726München,Germany ©2015InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 18 Rev.2.1,2015-05-18