TCDT1110/TCDT1110G Vishay Semiconductors Optocoupler, Phototransistor Output FEATURES • Extra low coupling capacity - typical 0.2 pF • High Common Mode Rejection • Low temperature coefficient of CTR 17201_1 NC C E 6 5 4 • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC V D E 1 2 3 A (+) C (–) NC e3 • Base not connected APPLICATIONS DESCRIPTION • Switch-mode power supplies The TCDT1110/TCDT1110G consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6 pin plastic dual inline package. The elements provide a fixed distance between input and output for highest safety requirements. • Line receiver VDE STANDARDS These couplers perform safety functions according to the following equipment standards: • DIN EN 60747-5-5 Optocoupler for electrical safety requirements • Computer peripheral interface • Microprocessor system interface • Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation): - For appl. class I - IV at mains voltage ≤ 300 V - For appl. class I - III at mains voltage ≤ 600 V according DIN EN 60747-5-5. AGENCY APPROVALS • IEC 60950/EN 60950 Office machines (applied for reinforced isolation for mains voltage ≤ 400 VRMS) • UL1577, File No. E76222 System Code A, Double Protection • VDE 0804 Telecommunication apparatus and data processing • DIN EN 60747-5-5 pending • IEC 60065 Safety for mains-operated household apparatus • BSI IEC 60950; IEC 60065 • FIMKO electronic and related ORDER INFORMATION PART REMARKS TCDT1110 CTR > 100 %, DIP-6 TCDT1110G CTR > 100 %, DIP-6 Note G = Leadform 10.16 mm; G is not marked on the body. ABSOLUTE MAXIMUM RATINGS PARAMETER (1) TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage VR 6 V Forward current IF 60 mA Forward surge current Power dissipation Junction temperature Document Number: 83531 Rev. 1.8, 16-May-08 tp/T ≤ 10 µs IFSM 3 A Pdiss 100 mW Tj 125 °C For technical questions, contact: [email protected] www.vishay.com 783 TCDT1110/TCDT1110G Optocoupler, Phototransistor Output Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER (1) TEST CONDITION SYMBOL VALUE UNIT Collector emitter voltage VCEO 70 V Emitter collector voltage VECO 7 V mA OUTPUT Collector current Collector peak current tp/T = 0.5, tp ≤ 10 ms Power dissipation Junction temperature IC 50 ICM 100 mA Pdiss 150 mW Tj 125 °C COUPLER VISO 5300 VRMS Total power dissipation Ptot 250 mw Ambient temperature range Tamb - 55 to + 100 °C Storage temperature range Tstg - 55 to + 125 °C Tsld 260 °C Isolation test voltage (RMS) Soldering temperature (2) t = 1 min 2 mm from case t ≤ 10 s Notes (1) T amb = 25 °C unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (2) Refer to wave profile for soldering conditions for through hole devices. ELECTRICAL CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. 1.5 UNIT INPUT IF = 50 mA VF 1.2 VR = 0, f = 1 MHz Cj 50 Collector emitter voltage IC = 1 mA VCEO 70 V Emitter collector voltage IE = 100 µA VECO 7 V VCE = 30 V, IF = 0 ICEO Forward voltage Junction capacitance V pF OUTPUT Collector-emitter cut-off current 150 nA COUPLER IF = 10 mA, IC = 0.5 mA VCEsat VCE = 5 V, IF = 10 mA, RL = 1 Ω fc 110 kHz f = 1 MHz Ck 0.3 pF Collector emitter saturation voltage Cut-off frequency Coupling capacitance 0.3 V Note Tamb = 25 °C unless otherwise specified. Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. CURRENT TRANSFER RATIO PARAMETER IC/IF TEST CONDITION SYMBOL MIN. VCE = 20 V, IF = 10 mA CTR 100 TYP. MAX. UNIT % MAXIMUM SAFETY RATINGS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT IF 130 mA Power dissipation COUPLER Pdiss 265 mW Rated impulse voltage Safety temperature VIOTM Tsi 6 150 kV °C INPUT Forward current OUTPUT Note According to DIN EN 60747-5-5 see figure 1. This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits. www.vishay.com 784 For technical questions, contact: [email protected] Document Number: 83531 Rev. 1.8, 16-May-08 TCDT1110/TCDT1110G Optocoupler, Phototransistor Output Vishay Semiconductors INSULATION RATED PARAMETERS TEST CONDITION SYMBOL MIN. Partial discharge test voltage routine test PARAMETER 100 %, ttest = 1 s Vpd 1.6 Partial discharge test voltage lot test (sample test) tTr = 60 s, ttest = 10 s, (see figure 2) VIOTM 6 kV Vpd 1.3 kV VIO = 500 V RIO 1012 Ω VIO = 500 V, Tamb = 100 °C RIO 1011 Ω RIO 109 Ω Insulation resistance VIO = 500 V, Tamb = 200 °C (construction test only) 300 TYP. MAX. UNIT kV VIOTM Psi (mW) 250 t1, t2 t3 , t4 ttest tstres 200 = 1 to 10 s =1s = 10 s = 12 s VPd 150 VIOWM VIORM 100 I si (mA) 50 0 0 0 95 10934 25 50 75 t3 ttest t4 100 125 150 175 200 13930 Tamb - Ambeint Temperature(°C) tTr = 60 s t1 t2 t stres t Fig. 3 - Derating diagram Fig. 4 - Test Pulse Diagram for Sample Test According to DIN EN 60747-5-5/DIN EN 60747-; IEC 60747 SWITCHING CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL Turn-off time VS = 10 V, IC = 2 mA, RL = 100 Ω (see figure 3) toff 15.0 µs Turn-on time VS = 10 V, IC = 2 mA, RL = 100 Ω (see figure 3) ton 15.0 µs Turn-off time VS = 10 V, IF = 10 mA, RL = 1 kΩ (see figure 4) toff 18.0 µs Turn-on time VS = 10 V, IF = 10 mA, RL = 1 kΩ (see figure 4) ton 9.0 µs IF 0 + 10 V IF IF RG = 50 tp = 0.01 T tp = 50 µs 100 Oscilloscope RL 1 M CL 20 pF 95 10889 MAX. UNIT + 10 V IC Channel I Channel II 50 1k Oscilloscope RL 1 M CL 20 pF 95 10898 Fig. 5 - Test Circuit, Non-Saturated Operation Document Number: 83531 Rev. 1.8, 16-May-08 IF = 10 mA RG = 50 tp = 0.01 T tp = 50 µs Channel I Channel II TYP. 0 IC = 2 mA; adjusted through input amplitude 50 MIN. Fig. 6 - Test Circuit, Saturated Operation For technical questions, contact: [email protected] www.vishay.com 785 TCDT1110/TCDT1110G Optocoupler, Phototransistor Output Vishay Semiconductors IF 0 tp IC t 100 % 90 % 10 % 0 tr td ts t on tp td tr t on (= td + tr) Pulse duration Delay time Rise time Turn-on time t tf t off ts tf t off (= ts + tf) Storage time Fall time Turn-off time 96 11698 Fig. 7 - Switching Times 300 Coupled device 250 200 Phototransistor 150 IR-diode 100 50 0 0 96 11700 40 80 120 Tamb - Ambient Temperature (°C) Fig. 8 - Total Power Dissipation vs. Ambient Temperature VCE = 10 V IF = 10 mA 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 - 30 - 20 - 10 0 10 20 30 40 50 60 70 80 Tamb - Ambient Temperature (°C) 96 11874 Fig. 10 - Relative Current Transfer Ratio vs. Ambient Temperature ICEO - Collector Dark Current with Open Base (nA) IF - Forward Current (mA) 100 10 1 VCE = 30 V IF = 0 A 1000 100 10 1 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VF - Forward Voltage (V) Fig. 9 - Forward Current vs. Forward Voltage www.vishay.com 786 1.5 10 000 1000 96 11862 CTRrel - Relative Current Transfer Ratio Ptot - Total Power Dissipation (mW) TYPICAL CHARACTERISTICS Tamb = 25 °C, unless otherwise specified 0 25 50 75 100 Tamb - Ambient Temperature (°C) Fig. 11 - Collector Dark Current vs. Ambient Temperature For technical questions, contact: [email protected] Document Number: 83531 Rev. 1.8, 16-May-08 TCDT1110/TCDT1110G Optocoupler, Phototransistor Output CTR - Current Transfer Ratio (%) IC - Collector Current (mA) 100 VCE = 10 V 10 1 0.1 0.01 0.1 1 10 100 IF - Forward Current (mA) 96 11904 20 mA IF = 50 mA 10 mA 5 mA 2 mA 1 mA 0.1 0.1 1 10 0.8 20 % used 0.6 CTR = 50 % used 0.4 0.2 10 % used 95 10972 10 1 Fig. 14 - Collector Emitter Saturation Voltage vs. Collector Current 100 10 IF - Forward Current (mA) 50 Saturated operation VS = 5 V RL = 1 kΩ 40 30 toff 20 10 ton 0 10 5 20 15 IF - Forward Current (mA) Fig. 16 - Turn-on/Turn-off Time vs. Forward Current 20 Non-saturated operation VS = 10 V RL = 100 Ω 15 toff 10 ton 5 0 100 IC - Collector Current (mA) Document Number: 83531 Rev. 1.8, 16-May-08 1 0.1 0 ton/toff - Turn-on/Turn-off Time (µs) VCEsat - Collector Emitter Saturation Voltage (V) 1.0 1 10 95 10974 Fig. 13 - Collector Current vs. Collector Emitter Voltage 0 100 100 VCE - Collector Emitter Voltage (V) 95 10985 VCE = 20 V Fig. 15 - Current Transfer Ratio vs. Forward Current ton/toff - Turn-on/Turn-off Time (µs) IC - Collector Current (mA) 100 1 1000 95 10976 Fig. 12 - Collector Current vs. Forward Current 10 Vishay Semiconductors 0 95 10975 2 4 6 8 10 IC - Collector (mA) Fig. 17 - Turn-on/Turn-off Time vs. Collector Current For technical questions, contact: [email protected] www.vishay.com 787 TCDT1110/TCDT1110G Optocoupler, Phototransistor Output Vishay Semiconductors Customer code/ identification/ option XXXXX XXXXX UL logo Product code VDE logo V D E V XXXY 63 Plant code Package code Vishay logo Date code (year, week) 17936 Fig. 18 - Marking example PACKAGE DIMENSIONS in millimeters 8.8 max. 7.62 ± 0.1 B 8.6 max. 0.3 A 3.3 0.5 min. 4.2 ± 0.1 6.4 max. 0.58 max. 0.3 max. 1.54 2.54 nom. 9 ± 0.6 0.4 B 5.08 nom. A Weight: ca. 0.50 g Creepage distance: > 6 mm Air path: > 6 mm after mounting on PC board 6 5 4 technical drawings according to DIN specifications 14770 1 2 3 8.8 max. 7.62 ± 0.1 8.6 max. 0.3 A B 3.3 5.08 max. 0.5 min. 4.2 ± 0.1 6.4 max. 0.58 max. 1.54 0.3 max. 10.16 ± 0.2 2.54 nom. 0.4 B 5.08 nom. A 6 5 4 Weight: ca. 0.50 g Creepage distance: > 8 mm Air path: > 8 mm after mounting on PC board technical drawings according to DIN specifications 1 2 3 www.vishay.com 788 14771 For technical questions, contact: [email protected] Document Number: 83531 Rev. 1.8, 16-May-08 TCDT1110/TCDT1110G Optocoupler, Phototransistor Output Vishay Semiconductors OZONE DEPLETING SUBSTANCES POLICY STATEMENT It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively. 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA. 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Document Number: 83531 Rev. 1.8, 16-May-08 For technical questions, contact: [email protected] www.vishay.com 789 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1