Data Sheet

Freescale Semiconductor
Technical Data
Document Number: MMRF1317H
Rev. 0, 3/2016
RF Power LDMOS Transistors
MMRF1317H
MMRF1317HS
High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFETs
These 1300 W RF power transistors are designed for applications operating
at frequencies between 1020 and 1100 MHz. These devices are suitable for use
in defense and commercial pulse applications, such as IFF and secondary
surveillance radars.
Typical Performance: In 1030, 1090 MHz reference circuit, VDD = 50 Vdc,
1030–1090 MHz, 1300 W PEAK, 50 V
RF POWER LDMOS TRANSISTORS
IDQ(A+B) = 100 mA
Frequency
(MHz)
Pout
(W)
Gps
(dB)
D
(%)
1300 Peak
18.9
56.0
1100 Peak
18.8
57.9
Signal Type
1030 (1)
Pulse
(128 sec, 10% Duty Cycle)
1090 (1)
NI--1230H--4S
MMRF1317H
Typical Narrowband Performance: VDD = 50 Vdc, IDQ(A+B) = 100 mA
Frequency
(MHz)
Pout
(W)
Gps
(dB)
D
(%)
1300 Peak
18.2
58.1
Signal Type
1030 (2)
Pulse
(128 sec, 10% Duty Cycle)
Load Mismatch/Ruggedness
Frequency
(MHz)
1030 (2)
Signal Type
VSWR
Pin
(W)
Test
Voltage
Pulse
(128 sec, 10%
Duty Cycle)
> 10:1
at all Phase
Angles
40
(3 dB
Overdrive)
50
NI--1230S--4S
MMRF1317HS
Result
No Device
Degradation
1. Measured in 1030, 1090 MHz reference circuit.
2. Measured in 1030 MHz narrowband test circuit.
Features
Gate A 3
1 Drain A
Gate B 4
2 Drain B
 Internally input and output matched for broadband operation and ease of use
 Device can be used single--ended, push--pull, or in a quadrature
configuration
 High ruggedness, handles > 10:1 VSWR
 Integrated ESD protection with greater negative voltage range for
improved Class C operation and gate voltage pulsing
(Top View)
Note: The backside of the package is the
source terminal for the transistor.
Figure 1. Pin Connections
 Characterized with series equivalent large--signal impedance parameters
Applications
 Ground--based secondary surveillance radars
 IFF transponders
 Freescale Semiconductor, Inc., 2016. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
MMRF1317H MMRF1317HS
1
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain--Source Voltage
Rating
VDSS
–0.5, +105
Vdc
Gate--Source Voltage
VGS
–6.0, +10
Vdc
Storage Temperature Range
Tstg
– 65 to +150
C
TC
–55 to +150
C
Case Operating Temperature Range
Operating Junction Temperature Range
(1)
Total Device Dissipation @ TC = 25C
Derate above 25C
TJ
–55 to +225
C
PD
869
4.35
W
W/C
Symbol
Value (2)
Unit
ZJC
0.019
C/W
Table 2. Thermal Characteristics
Characteristic
Thermal Impedance, Junction to Case
Pulse: Case Temperature 70C, 1300 W Peak, 128 sec Pulse Width,
10% Duty Cycle, 50 Vdc, IDQ(A+B) = 100 mA, 1030 MHz
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2, passes 2500 V
Machine Model (per EIA/JESD22--A115)
B, passes 250 V
Charge Device Model (per JESD22--C101)
IV, passes 2000 V
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
IGSS
—
—
1
Adc
V(BR)DSS
105
—
—
Vdc
Zero Gate Voltage Drain Leakage Current
(VDS = 50 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 105 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
Adc
Gate Threshold Voltage (3)
(VDS = 10 Vdc, ID = 520 Adc)
VGS(th)
1.3
1.7
2.3
Vdc
Gate Quiescent Voltage (4)
(VDD = 50 Vdc, ID(A+B) = 100 mAdc, Measured in Functional Test)
VGS(Q)
1.5
2.0
2.5
Vdc
Drain--Source On--Voltage (3)
(VGS = 10 Vdc, ID = 2.6 Adc)
VDS(on)
0.1
0.3
0.5
Vdc
Crss
—
2.43
—
pF
Characteristic
Off Characteristics
(3)
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
Drain--Source Breakdown Voltage
(VGS = 0 Vdc, ID = 10 Adc)
On Characteristics
Dynamic Characteristics (3)
Reverse Transfer Capacitance
(VDS = 50 Vdc  30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
1.
2.
3.
4.
Continuous use at maximum temperature will affect MTTF.
Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.
Each side of device measured separately.
Measurement made with device in push--pull configuration.
(continued)
MMRF1317H MMRF1317HS
2
RF Device Data
Freescale Semiconductor, Inc.
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests (1) (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ(A+B) = 100 mA, Pout = 1300 W Peak (130 W Avg.),
f = 1030 MHz, 128 sec Pulse Width, 10% Duty Cycle
Power Gain
Gps
17.4
18.2
19.1
dB
Drain Efficiency
D
55.0
58.1
—
%
Input Return Loss
IRL
—
–12
–9
dB
Load Mismatch/Ruggedness (In Freescale Test Fixture, 50 ohm system) IDQ(A+B) = 100 mA
Frequency
(MHz)
Signal
Type
1030
Pulse
(128 sec, 10%
Duty Cycle)
VSWR
> 10:1 at all Phase Angles
Pin
(W)
40
(3 dB Overdrive)
Test Voltage, VDD
Result
50
No Device Degradation
Table 5. Ordering Information
Device
MMRF1317HR5
MMRF1317HSR5
Tape and Reel Information
R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel
Package
NI--1230H--4S, Eared
NI--1230S--4S, Earless
1. Measurement made with device in push--pull configuration.
MMRF1317H MMRF1317HS
RF Device Data
Freescale Semiconductor, Inc.
3
TYPICAL CHARACTERISTICS
300
Crss
10
100 mA
1.15
NORMALIZED VGS(Q)
100
C, CAPACITANCE (pF)
1.2
Measured with 30 mV (rms) ac @ 1 MHz
VGS = 0 Vdc
1.1
500 mA
1.05
IDQ(A+B) = 1000 mA
1
0.95
0.9
0.85
0.8
–75
1
0
10
20
30
40
50
–50
–25
0
25
50
75
100
TC, CASE TEMPERATURE (C)
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Note: Each side of device measured separately.
IDQ (mA)
Figure 2. Capacitance versus Drain--Source Voltage
Slope (mV/C)
100
–2.46
500
–2.21
1000
–2.07
Figure 3. Normalized VGS versus Quiescent
Current and Case Temperature
108
VDD = 50 Vdc
Pulse Width = 128 sec
10% Duty Cycle
MTTF (HOURS)
107
ID = 38.8 Amps
106
46.9 Amps
56.2 Amps
105
104
90
110
130
150
170
190
210
230
250
TJ, JUNCTION TEMPERATURE (C)
Note: MTTF value represents the total cumulative operating time
under indicated test conditions.
Figure 4. MTTF versus Junction Temperature — Pulse
MMRF1317H MMRF1317HS
4
RF Device Data
Freescale Semiconductor, Inc.
1030, 1090 MHz REFERENCE CIRCUIT — 2.0  4.0 (5.1 cm  10.2 cm)
Table 6. 1030, 1090 MHz Performance (In Freescale Reference Circuit, 50 ohm system)
VDD = 50 Vdc, IDQ(A+B) = 100 mA
Frequency
(MHz)
1030
1090
Signal Type
Pulse
(128 sec, 10% Duty Cycle)
Gps
(dB)
D
(%)
Pout
(W)
18.9
56.0
1300 Peak
18.8
57.9
1100 Peak
MMRF1317H MMRF1317HS
RF Device Data
Freescale Semiconductor, Inc.
5
1030, 1090 MHz REFERENCE CIRCUIT — 2.0  4.0 (5.1 cm  10.2 cm)
Rev. 1
C2
C1
C20
C3
C29
C28
C22
C24
R1
D70018
C4
C14*
L1
C9*
C10
BALUN 1
C11
C16*
C17*
C13*
Q1
BALUN 2
C18*
C19*
C12*
L2
C8
R2
C15*
C7
C5
C25
C21
C6
C23
C27
C26
*C9, C12, C13, C14, C15, C16, C17, C18 and C19 are mounted vertically.
Figure 5. MMRF1317HR5 Reference Circuit Component Layout — 1030, 1090 MHz
Table 7. MMRF1317H(HS) Reference Circuit Component Designations and Values — 1030, 1090 MHz
Part
Description
Part Number
Manufacturer
Balun 1, 2
800–1000 MHz, 4--to--1 PCB Balun
Transformers
3A412S
Anaren
C1, C5
22 F, 35 V Tantalum Capacitors
T491X226K035AT
Kemet
C2, C6
2.2 F Chip Capacitors
C1825C225J5RACTU
Kemet
C3, C7
0.22 F Chip Capacitors
C1210C224K1RACTU
Kemet
C4, C8, C10, C11, C16, C17,
C18, C19, C20, C21
36 pF Chip Capacitors
ATC100B360JT500XT
ATC
C9
5.1 pF Chip Capacitor
ATC800B5R1BT500XT
ATC
C12
6.2 pF Chip Capacitor
ATC800B6R2BT500XT
ATC
C13
1.6 pF Chip Capacitor
ATC800B1R5BT500XT
ATC
C14, C15
6.8 pF Chip Capacitors
ATC800B6R8BT500XT
ATC
C22, C23
0.47 F Chip Capacitors
HMK432B7474KM-T
Taiyo Yuden
C24, C25
0.022 F Chip Capacitors
C1825C223K1GACTU
Kemet
C26, C27, C28, C29
470 F, 63 V Electrolytic Capacitors
MCGPR63V477M13X26-RH
Multicomp
L1, L2
27.4 nH, 3 Turn, #20 AWG ID = 0.125
Inductors, Hand Wound
8050
Belden
Q1
RF Power LDMOS Transistor
MMRF1317HR5
Freescale
R1, R2
1 k, 1/4 W Chip Resistors
CRCW12061K00FKEA
Vishay
PCB
Rogers RO3010 0.050, r = 11.2
D70018
MTL
MMRF1317H MMRF1317HS
6
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS — 1030, 1090 MHz
REFERENCE CIRCUIT
80
20
70
1030 MHz
D
1090 MHz
60
50
18
1090 MHz
Gps
40
30
1030 MHz
16
20
VDD = 50 Vdc, IDQ(A+B) = 100 mA, f = 1030 MHz
Pulse Width = 128 sec, Duty Cycle = 10%
14
200
400
600
800
1000 1200
1400
D DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
22
10
1600
1800
0
2000
Pout, OUTPUT POWER (WATTS) PEAK
Figure 6. Power Gain and Drain Efficiency versus
Output Power
MMRF1317H MMRF1317HS
RF Device Data
Freescale Semiconductor, Inc.
7
1030, 1090 MHz REFERENCE CIRCUIT
Zo = 10 
f = 1090 MHz
Zload
f = 1030 MHz
f = 1090 MHz
Zsource
f = 1030 MHz
f
MHz
Zsource

Zload

1030
6.03 – j2.97
1.41 – j0.13
1090
6.30 – j1.54
1.08 + j2.08
Zsource = Test circuit impedance as measured from
gate to gate, balanced configuration.
Zload
50 
Input
Matching
Network
= Test circuit impedance as measured
from drain to drain, balanced configuration.
+
Device
Under
Test
--
--
+
Zsource
Zload
Output
Matching
Network
50 
Figure 7. Series Equivalent Source and Load Impedance — 1030, 1090 MHz
MMRF1317H MMRF1317HS
8
RF Device Data
Freescale Semiconductor, Inc.
1030 MHz NARROWBAND PRODUCTION TEST FIXTURE — 6.0  4.0 (15.2 cm  10.2 cm)
C2
C17
D63944
C18
C4
C3
C13
C5
R1
C14 L1
C6
C19
C7
C8
R2
MMRF1317H/HS
Rev. 1
C10
C9
CUT OUT AREA
BALUN 1
C1
C16
C15
C21
C22
C23
BALUN 2
C24
C25
C20
C27 L2
C26
C28
C29
C11
C30
C31
C12
Figure 8. MMRF1317H(HS) Narrowband Test Circuit Component Layout — 1030 MHz
Table 8. MMRF1317H(HS) Narrowband Test Circuit Component Designations and Values — 1030 MHz
Part
Description
Part Number
Manufacturer
Balun 1, 2
800–1000 MHz, 4--to--1 PCB Balun
Transformers
3A412S
Anaren
C1
1.0 pF Chip Capacitor
ATC100B1R0JT500XT
ATC
C2, C12
22 F Tantalum Capacitors
T491X226K035AT
Kemet
C3, C9
2.2 F Chip Capacitors
C1825C225J5RACTU
Kemet
C4, C11
0.1 F Chip Capacitors
CDR33BX104AKWS
AVX
C5, C6, C8, C10, C15, C22,
C23, C24, C25, C28
36 pF Chip Capacitors
ATC100B360JT500XT
ATC
C7
6.2 pF Chip Capacitor
ATC100B6R2JT500XT
ATC
C13, C19, C26
5.1 pF Chip Capacitors
ATC100B5R1JT500XT
ATC
C14, C27
2.0 pF Chip Capacitors
ATC800B2R0BT500XT
ATC
C16, C29
0.22 F Chip Capacitors
C1825C224K1RACTU
Kemet
C17, C18, C30, C31
470 F, 63 V Electrolytic Capacitors
MCGPR63V477M13X26-RH
Multicomp
C20
3.0 pF Chip Capacitor
ATC100B3R0JT500XT
ATC
C21
2.2 pF Chip Capacitor
ATC100B2R2JT500XT
ATC
L1, L2
12 nH Inductors
GA3094ALB
Coilcraft
R1, R2
100 , 1/2 W Chip Resistors
CRCW2010100RFKFA
Vishay
PCB
Arlon AD255A, 0.030, r = 2.55
D63944
MTL
MMRF1317H MMRF1317HS
RF Device Data
Freescale Semiconductor, Inc.
9
TYPICAL CHARACTERISTICS — 1030 MHz
PRODUCTION TEST FIXTURE
18
19
40
16
30
D
15
20
14
13
60
50
Gps
17
20
30
100
0
2000
1000
300
500 mA
17
100 mA
16
15
1000
2000
Pout, OUTPUT POWER (WATTS) PEAK
Pout, OUTPUT POWER (WATTS) PEAK
Figure 9. Power Gain and Drain Efficiency
versus Output Power
Figure 10. Power Gain versus Output Power and
Quiescent Drain Current
20
1800
19
1600
VDD = 50 Vdc, IDQ(A+B) = 100 mA, f = 1030 MHz TC = –55_C
25_C
Pulse Width = 128 sec, Duty Cycle = 10%
1400
85_C
18
Gps, POWER GAIN (dB)
IDQ(A+B) = 1000 mA
18
14 VDD = 50 V, f = 1030 MHz
Pulse Width = 128 sec, Duty Cycle = 10%
13
300
30
100
10
Pout, OUTPUT POWER (WATTS) PEAK
Gps, POWER GAIN (dB)
19
70
Gps, POWER GAIN (dB)
VDD = 50 Vdc, IDQ(A+B) = 100 mA, f = 1030 MHz
Pulse Width = 128 sec, Duty Cycle = 10%
D, DRAIN EFFICIENCY (%)
20
17
16
15
50 V
14
45 V
13
40 V
I
= 100 mA, f = 1030 MHz
12 DQ(A+B)
Pulse Width = 128 sec, Duty Cycle = 10%
35 V
11
VDD = 30 V
10
30
100
300
1000
1200
1000
800
600
400
200
0
30
2000
32
34
36
38
40
42
44
46
48
50
Pin, INPUT POWER (dBm) PEAK
Pout, OUTPUT POWER (WATTS) PEAK
Figure 11. Power Gain versus Output Power
and Drain Voltage
f
(MHz)
P1dB
(W)
P3dB
(W)
1030
1322
1498
Figure 12. Output Power versus Input Power
VDD = 50 Vdc, IDQ(A+B) = 100 mA, f = 1030 MHz
Pulse Width = 128 sec, Duty Cycle = 10%
Gps, POWER GAIN (dB)
22
20 TC = –55_C
70
85_C
25_C
18
60
TC = 25_C
–55_C
40
85_C
30
16
D
Gps
14
20
10
12
10
50
D, DRAIN EFFICIENCY (%)
24
0
0
200
400
600
800
1000
1200
1400
1600
Pout, OUTPUT POWER (WATTS) PEAK
Figure 13. Power Gain and Drain Efficiency versus
Output Power
MMRF1317H MMRF1317HS
10
RF Device Data
Freescale Semiconductor, Inc.
1030 MHz NARROWBAND PRODUCTION TEST FIXTURE
f
MHz
Zsource

Zload

1030
3.74 – j1.63
2.29 – j0.19
Zsource = Test circuit impedance as measured from
gate to gate, balanced configuration.
Zload
50 
Input
Matching
Network
= Test circuit impedance as measured
from drain to drain, balanced configuration.
+
Device
Under
Test
--
--
+
Zsource
Zload
Output
Matching
Network
50 
Figure 14. Series Equivalent Source and Load Impedance — 1030 MHz
MMRF1317H MMRF1317HS
RF Device Data
Freescale Semiconductor, Inc.
11
PACKAGE DIMENSIONS
MMRF1317H MMRF1317HS
12
RF Device Data
Freescale Semiconductor, Inc.
MMRF1317H MMRF1317HS
RF Device Data
Freescale Semiconductor, Inc.
13
MMRF1317H MMRF1317HS
14
RF Device Data
Freescale Semiconductor, Inc.
MMRF1317H MMRF1317HS
RF Device Data
Freescale Semiconductor, Inc.
15
PRODUCT DOCUMENTATION
Refer to the following resources to aid your design process.
Application Notes
 AN1908: Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages
 AN1955: Thermal Measurement Methodology of RF Power Amplifiers
To Download Resources Specific to a Given Part Number:
1.
2.
3.
4.
Go to http://www.nxp.com/RF
Search by part number
Click part number link
Choose the desired resource from the drop down menu
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
0
Mar. 2016
Description
 Initial Release of Data Sheet
MMRF1317H MMRF1317HS
16
RF Device Data
Freescale Semiconductor, Inc.
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E 2016 Freescale Semiconductor, Inc.
MMRF1317H MMRF1317HS
Document
Number:
RF
Device
Data MMRF1317H
Rev. 0, 3/2016Semiconductor, Inc.
Freescale
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