IPD60R3K4CE,IPU60R3K4CE,IPS60R3K4CE MOSFET 600VCoolMOSªCEPowerTransistor DPAK CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™CEisa price-performanceoptimizedplatformenablingtotargetcostsensitive applicationsinConsumerandLightingmarketsbystillmeetinghighest efficiencystandards.Thenewseriesprovidesallbenefitsofafast switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand offeringthebestcostdownperformanceratioavailableonthemarket. Features IPAK 1 IPAKSL tab tab tab 2 1 3 2 3 Drain Pin 2, Tab Gate Pin 1 •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •Veryhighcommutationruggedness •Easytouse/drive •Pb-freeplating,Halogenfreemoldcompound •Qualifiedforstandardgradeapplications Source Pin 3 Applications PFCstages,hardswitchingPWMstagesandresonantswitchingstages fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorLighting. Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 650 V RDS(on),max 3400 mΩ Id. 2.6 A Qg.typ 4.6 nC ID,pulse 3.9 A Eoss@400V 0.57 µJ Type/OrderingCode Package IPD60R3K4CE PG-TO 252 IPU60R3K4CE PG-TO 251 IPS60R3K4CE PG-TO 251 Final Data Sheet Marking 60S3K4CE 1 RelatedLinks see Appendix A Rev.2.0,2016-02-26 600VCoolMOSªCEPowerTransistor IPD60R3K4CE,IPU60R3K4CE,IPS60R3K4CE TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Final Data Sheet 2 Rev.2.0,2016-02-26 600VCoolMOSªCEPowerTransistor IPD60R3K4CE,IPU60R3K4CE,IPS60R3K4CE 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Values Unit Note/TestCondition 2.6 1.6 A TC=25°C TC=100°C - 3.9 A TC=25°C - - 6 mJ ID=0.3A; VDD=50V; see table 11 EAR - - 0.04 mJ ID=0.3A; VDD=50V; see table 11 Avalanche current, repetitive IAR - - 0.3 A - MOSFET dv/dt ruggedness dv/dt - - 50 V/ns VDS=0...480V Gate source voltage (static) VGS -20 - 20 V static; Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz) Power dissipation Ptot - - 29 W TC=25°C Storage temperature Tstg -40 - 150 °C - Operating junction temperature Tj -40 - 150 °C - Continuous diode forward current IS - - 1.8 A TC=25°C Diode pulse current IS,pulse - - 4 A TC=25°C Reverse diode dv/dt3) dv/dt - - 15 V/ns VDS=0...400V,ISD<=IS,Tj=25°C see table 9 Maximum diode commutation speed dif/dt - - 500 A/µs VDS=0...400V,ISD<=IS,Tj=25°C see table 9 Unit Note/TestCondition Min. Typ. Max. ID - - Pulsed drain current2) ID,pulse - Avalanche energy, single pulse EAS Avalanche energy, repetitive TO-252 2) 2Thermalcharacteristics Table3ThermalcharacteristicsTO-252/TO-251 Parameter Symbol Thermal resistance, junction - case Values Min. Typ. Max. RthJC - - 4.26 °C/W - Thermal resistance, junction - ambient RthJA - - 62 °C/W device on PCB, minimal footprint Thermal resistance, junction - ambient RthJA for SMD version - 35 45 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70µm thickness) copper area °C/W for drain connection and cooling. PCB is vertical without air stream cooling. Soldering temperature, wave & reflow soldering allowed - - 260 °C Tsold reflow MSL1 1) Limited by Tj max. Maximum duty cycle D=0.50 Pulse width tp limited by Tj,max 3) IdenticallowsideandhighsideswitchwithidenticalRG 2) Final Data Sheet 3 Rev.2.0,2016-02-26 600VCoolMOSªCEPowerTransistor IPD60R3K4CE,IPU60R3K4CE,IPS60R3K4CE 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=0.25mA 3.0 3.5 V VDS=VGS,ID=0.04mA - 10 1 - µA VDS=600,VGS=0V,Tj=25°C VDS=600,VGS=0V,Tj=150°C IGSS - - 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 3.17 8.22 3.40 - Ω VGS=10V,ID=0.5A,Tj=25°C VGS=10V,ID=0.5A,Tj=150°C Gate resistance RG - 15 - Ω f=1MHz,opendrain Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 600 - Gate threshold voltage V(GS)th 2.5 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 93 - pF VGS=0V,VDS=100V,f=1MHz Output capacitance Coss - 9 - pF VGS=0V,VDS=100V,f=1MHz Effective output capacitance, energy related1) Co(er) - 6.4 - pF VGS=0V,VDS=0...480V Effective output capacitance, time related2) Co(tr) - 20.6 - pF ID=constant,VGS=0V,VDS=0...480V Turn-on delay time td(on) - 8 - ns VDD=400V,VGS=13V,ID=0.6A, RG=20Ω;seetable10 Rise time tr - 10 - ns VDD=400V,VGS=13V,ID=0.6A, RG=20Ω;seetable10 Turn-off delay time td(off) - 40 - ns VDD=400V,VGS=13V,ID=0.6A, RG=20Ω;seetable10 Fall time tf - 60 - ns VDD=400V,VGS=13V,ID=0.6A, RG=20Ω;seetable10 Unit Note/TestCondition Table6Gatechargecharacteristics Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 0.5 - nC VDD=480V,ID=0.6A,VGS=0to10V Gate to drain charge Qgd - 2.6 - nC VDD=480V,ID=0.6A,VGS=0to10V Gate charge total Qg - 4.6 - nC VDD=480V,ID=0.6A,VGS=0to10V Gate plateau voltage Vplateau - 5.4 - V VDD=480V,ID=0.6A,VGS=0to10V 1) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to80%Vo(BR)DSS Co(tr)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to80%Vo(BR)DSS 2) Final Data Sheet 4 Rev.2.0,2016-02-26 600VCoolMOSªCEPowerTransistor IPD60R3K4CE,IPU60R3K4CE,IPS60R3K4CE Table7Reversediodecharacteristics Parameter Symbol Diode forward voltage Values Unit Note/TestCondition - V VGS=0V,IF=0.6A,Tj=25°C 160 - ns VR=400V,IF=0.6A,diF/dt=100A/µs; see table 9 - 0.42 - µC VR=400V,IF=0.6A,diF/dt=100A/µs; see table 9 - 5.1 - A VR=400V,IF=0.6A,diF/dt=100A/µs; see table 9 Min. Typ. Max. VSD - 0.9 Reverse recovery time trr - Reverse recovery charge Qrr Peak reverse recovery current Irrm Final Data Sheet 5 Rev.2.0,2016-02-26 600VCoolMOSªCEPowerTransistor IPD60R3K4CE,IPU60R3K4CE,IPS60R3K4CE 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation(NonFullPAK) Diagram2:Safeoperatingarea(NonFullPAK) 101 30 1 µs 25 10 µs 100 100 µs 20 1 ms ID[A] Ptot[W] DC 15 10-1 10 10-2 5 0 0 25 50 75 100 125 10-3 150 100 101 TC[°C] 102 103 VDS[V] Ptot=f(TC) ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram3:Safeoperatingarea(NonFullPAK) Diagram4:Max.transientthermalimpedance(NonFullPAK) 1 101 10 1 µs 100 0.5 0.2 10 µs 100 µs 1 ms 100 ZthJC[K/W] ID[A] DC 10-1 0.1 0.05 0.02 0.01 single pulse 10-1 10-2 10-3 100 101 102 103 10-2 10-5 10-4 VDS[V] 10-2 10-1 tp[s] ID=f(VDS);TC=80°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tP);parameter:D=tp/T 6 Rev.2.0,2016-02-26 600VCoolMOSªCEPowerTransistor IPD60R3K4CE,IPU60R3K4CE,IPS60R3K4CE Diagram5:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics 5 3.0 4 20 V 2.5 20 V 10 V 10 V 8V 8V 2.0 7V ID[A] ID[A] 3 7V 1.5 6V 2 1.0 5.5 V 6V 1 5V 5.5 V 0.5 4.5 V 5V 4.5 V 0 0 5 10 15 0.0 20 0 5 10 VDS[V] 15 20 VDS[V] ID=f(VDS);Tj=25°C;parameter:VGS ID=f(VDS);Tj=125°C;parameter:VGS Diagram7:Typ.drain-sourceon-stateresistance Diagram8:Drain-sourceon-stateresistance 12 10 5V 5.5 V 6V 6.5 V 7V 9 10 8 7 8 6 RDS(on)[Ω] RDS(on)[Ω] 10 V 6 4 5 98% 4 typ 3 2 2 1 0 0.0 0.5 1.0 1.5 2.0 2.5 0 -50 -25 0 25 ID[A] RDS(on)=f(ID);Tj=125°C;parameter:VGS Final Data Sheet 50 75 100 125 150 Tj[°C] RDS(on)=f(Tj);ID=0.5A;VGS=10V 7 Rev.2.0,2016-02-26 600VCoolMOSªCEPowerTransistor IPD60R3K4CE,IPU60R3K4CE,IPS60R3K4CE Diagram9:Typ.transfercharacteristics Diagram10:Typ.gatecharge 5 10 9 25 °C 4 8 120 V 7 VGS[V] 6 ID[A] 3 480 V 150 °C 2 5 4 3 1 2 1 0 0 2 4 6 8 0 10 0 1 VGS[V] 2 3 4 5 125 150 Qgate[nC] ID=f(VGS);VDS=20V;parameter:Tj VGS=f(Qgate);ID=0.6Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode Diagram12:Avalancheenergy 2 10 7 25 °C 125 °C 6 5 IF[A] EAS[mJ] 101 4 3 100 2 1 10-1 0.0 0.5 1.0 1.5 2.0 0 25 50 VSD[V] 100 Tj[°C] IF=f(VSD);parameter:Tj Final Data Sheet 75 EAS=f(Tj);ID=0.3A;VDD=50V 8 Rev.2.0,2016-02-26 600VCoolMOSªCEPowerTransistor IPD60R3K4CE,IPU60R3K4CE,IPS60R3K4CE Diagram13:Drain-sourcebreakdownvoltage Diagram14:Typ.capacitances 104 700 680 660 103 620 C[pF] VBR(DSS)[V] 640 600 Ciss 102 580 101 560 Coss 540 Crss 520 -75 -50 -25 0 25 50 75 100 125 150 175 100 0 100 Tj[°C] 200 300 400 500 VDS[V] VBR(DSS)=f(Tj);ID=0.25mA C=f(VDS);VGS=0V;f=1MHz Diagram15:Typ.Cossstoredenergy 1.00 0.90 0.80 0.70 Eoss[µJ] 0.60 0.50 0.40 0.30 0.20 0.10 0.00 0 100 200 300 400 500 600 VDS[V] Eoss=f(VDS) Final Data Sheet 9 Rev.2.0,2016-02-26 600VCoolMOSªCEPowerTransistor IPD60R3K4CE,IPU60R3K4CE,IPS60R3K4CE 5TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform V ,I Rg1 VDS( peak) VDS VDS VDS trr IF Rg 2 tF tS dIF / dt IF QF IF dIrr / dt trr =tF +tS Qrr = QF + QS Irrm Rg1 = Rg 2 t 10 %Irrm QS Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform VDS 90% VDS VGS VGS 10% td(on) ton tr td(off) tf toff Table10Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform V(BR)DS ID VDS VDS Final Data Sheet 10 ID VDS Rev.2.0,2016-02-26 600VCoolMOSªCEPowerTransistor IPD60R3K4CE,IPU60R3K4CE,IPS60R3K4CE 6PackageOutlines *) mold flash not included DIM A A1 b b2 b3 c c2 D D1 E E1 e e1 N H L L3 L4 F1 F2 F3 F4 F5 F6 MILLIMETERS MIN MAX 2.16 2.41 0.00 0.15 0.64 0.89 0.65 1.15 5.00 5.50 0.46 0.60 0.46 0.98 5.97 6.22 5.02 5.84 6.40 6.73 4.70 5.60 2.29 (BSC) 4.57 (BSC) 3 9.40 10.48 1.18 1.70 0.90 1.25 0.51 1.00 10.60 6.40 2.20 5.80 5.76 1.20 INCHES MIN 0.085 0.000 0.025 0.026 0.197 0.018 0.018 0.235 0.198 0.252 0.185 0.370 0.046 0.035 0.020 MAX 0.095 0.006 0.035 0.045 0.217 0.024 0.039 0.245 0.230 0.265 0.220 0.090 (BSC) 0.180 (BSC) 3 0.413 0.067 0.049 0.039 0.417 0.252 0.087 0.228 0.227 0.047 DOCUMENT NO. Z8B00003328 SCALE 0 2.0 0 2.0 4mm EUROPEAN PROJECTION ISSUE DATE 01-09-2015 REVISION 05 Figure1OutlinePG-TO252,dimensionsinmm/inches Final Data Sheet 11 Rev.2.0,2016-02-26 600VCoolMOSªCEPowerTransistor IPD60R3K4CE,IPU60R3K4CE,IPS60R3K4CE TO251-3-21/-341/-345 DOCUMENT NO. Z8B00003330 DIM A A1 b b2 b4 c c2 D D1 E E1 e e1 N L L1 L2 MILLIMETERS MIN 2.16 0.90 0.64 0.65 4.95 0.46 0.46 5.97 5.04 6.35 4.70 INCHES MAX 2.41 1.14 0.89 1.15 5.50 0.60 0.89 6.22 5.77 6.73 5.21 MIN 0.085 0.035 0.025 0.026 0.195 0.018 0.018 0.235 0.198 0.250 0.185 2.29 4.57 3 8.89 0.85 0.89 MAX 0.095 0.045 0.035 0.045 0.217 0.024 0.035 0.245 0.227 0.265 0.205 0.090 0.180 3 9.65 2.29 1.37 0.350 0.033 0.035 SCALE 0 2.0 0 2.0 4mm EUROPEAN PROJECTION ISSUE DATE 31-08-2015 0.380 0.090 0.054 REVISION 04 Figure2OutlinePG-TO251,dimensionsinmm/inches Final Data Sheet 12 Rev.2.0,2016-02-26 600VCoolMOSªCEPowerTransistor IPD60R3K4CE,IPU60R3K4CE,IPS60R3K4CE DOCUMENT NO. Z8B00003329 DIM A A1 b b2 b4 c c2 D D1 E E1 e e1 N L L1 L2 MILLIMETERS MIN MAX 2.18 2.40 0.80 1.14 0.64 0.89 0.65 1.15 4.95 5.50 0.46 0.59 0.46 0.89 5.97 6.22 5.04 5.55 6.35 6.73 4.60 5.21 2.29 4.57 3 3.00 3.60 0.80 1.25 0.88 1.28 INCHES MIN 0.086 0.031 0.025 0.026 0.195 0.018 0.018 0.235 0.198 0.250 0.181 MAX 0.094 0.045 0.035 0.045 0.217 0.023 0.035 0.245 0.219 0.265 0.205 0.090 0.180 3 0.118 0.031 0.035 SCALE 0 2.0 0 2.0 4mm EUROPEAN PROJECTION ISSUE DATE 21-10-2015 0.142 0.049 0.050 REVISION 06 Figure3OutlinePG-TO251,dimensionsinmm/inches Final Data Sheet 13 Rev.2.0,2016-02-26 600VCoolMOSªCEPowerTransistor IPD60R3K4CE,IPU60R3K4CE,IPS60R3K4CE 7AppendixA Table11RelatedLinks • IFXCoolMOSTMCEWebpage:www.infineon.com • IFXCoolMOSTMCEapplicationnote:www.infineon.com • IFXCoolMOSTMCEsimulationmodel:www.infineon.com • IFXDesigntools:www.infineon.com Final Data Sheet 14 Rev.2.0,2016-02-26 600VCoolMOSªCEPowerTransistor IPD60R3K4CE,IPU60R3K4CE,IPS60R3K4CE RevisionHistory IPD60R3K4CE, IPU60R3K4CE, IPS60R3K4CE Revision:2016-02-26,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2016-02-26 Release of final version TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: [email protected] Publishedby InfineonTechnologiesAG 81726München,Germany ©2016InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 15 Rev.2.0,2016-02-26