ENA2218 D

Ordering number : ENA2218
NDUL03N150C
N-Channel Power MOSFET
http://onsemi.com
1500V, 2.5A, 10.5Ω, TO-3PF-3L
Features
•
•
•
ON-resistance RDS(on)=8Ω (typ.)
Input capacitance Ciss=650pF (typ.)
10V drive
TO-3PF-3L
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Symbol
Conditions
Ratings
VDSS
VGSS
ID
IDP
Limited only maximum temperature Tch=150°C
Unit
1500
V
±30
V
2.5
A
PW≤10μs, duty cycle≤1%
5
A
3.0
W
Allowable Power Dissipation
PD
50
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *1
EAS
IAV
34
mJ
2.5
A
Avalanche Current *2
Tc=25°C
Note : *1 VDD=50V, L=10mH, IAV=2.5A (Fig.1)
*2 L≤10mH, single pulse
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Drain to Source Breakdown Voltage
V(BR)DSS
Zero-Gate Voltage Drain Current
IDSS
ID=10mA, VGS=0V
VDS=1200V, VGS=0V
Gate to Source Leakage Current
IGSS
VGS=±30V, VDS=0V
Cutoff Voltage
VGS(off)
Forward Transfer Admittance
| yfs |
VDS=10V, ID=1mA
VDS=20V, ID=1.25A
ID=1.25A, VGS=10V
Static Drain to Source On-State Resistance
RDS(on)
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-ON Delay Time
td(on)
tr
Rise Time
Turn-OFF Delay Time
VDS=30V, f=1MHz
See Fig.2
Ratings
min
typ
Unit
max
1500
V
2
1
mA
±100
nA
4
1.9
8
V
S
10.5
Ω
650
pF
70
pF
20
pF
15
ns
24
ns
140
ns
Fall Time
td(off)
tf
Total Gate Charge
Qg
Gate to Source Charge
Qgs
Gate to Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
IS=2.5A, VGS=0V
0.8
Reverse Recovery Time
trr
Qrr
See Fig.3
350
ns
2220
nC
Reverse Recovery Charge
VDS=200V, VGS=10V, ID=2.5A
47
ns
34
nC
4.7
nC
15
IS=2.5A, VGS=0V, di/dt=100A/μs
nC
1.5
V
ORDERING INFORMATION
See detailed ordering and shipping information on page 4 of this data sheet.
Semiconductor Components Industries, LLC, 2013
September, 2013
92513 TKIM TC-00003021/ No. A2218-1/5
NDUL03N150C
ID -- VDS
5.0
4.5
Drain Current, ID -- A
3.5
3.0
2.5
5V
2.0
1.5
25°C
2.5
75°C
2.0
1.5
30
40
14
Tc=75°C
12
10
25°C
8
6
--25°C
4
2
4
6
8
10
12
Source Current, IS -- A
3
°C
25
1.0
=
Tc
7
C
5°
--2
5
A
.25
14
=1
, ID
0V
12
=1
S
10
VG
8
6
4
2
--25
0
°C
75
3
25
50
75
100
125
150
IT17225
IS -- VSD
10
7
5
5
2
16
Case Temperature, Tc -- °C
VDS=20V
7
18
IT17224
| yfs | -- ID
10
20
IT17249
Single pulse
0
--50
14
Gate to Source Voltage, VGS -- V
15
RDS(on) -- Tc
20
Static Drain to Source
On-State Resistance, RDS(on) -- Ω
16
2
10
22
18
0
5
Gate to Source Voltage, VGS -- V
Single pulse
ID=1.25A
20
0
0
IT17222
RDS(on) -- VGS
22
0
50
Single pulse
VGS=0V
3
2
1.0
7
5
3
2
0.1
7
5
--25°C
20
0.5
C
25°C
10
0
Drain to Source Voltage, VDS -- V
Static Drain to Source
On-State Resistance, RDS(on) -- Ω
3.0
1.0
VGS=4V
0.5
Forward Transfer Admittance, | yfs | -- S
Tc= --25°C
3.5
Tc=7
5°
Drain Current, ID -- A
4.0
6V
1.0
3
2
2
0.1
0.01
2
3
5 7 0.1
2
3
5 7 1.0
2
3
SW Time -- ID
1000
VDD=200V
VGS=10V
7
5
0
0.2
0.4
0.6
0.8
1.0
Diode Forward Voltage, VSD -- V
Ciss, Coss, Crss -- VDS
10000
7
5
1.2
IT17248
f=1MHz
3
Ciss, Coss, Crss -- pF
3
td (off)
2
100
tf
7
5
3
tr
2
10
0.1
0.01
5 7 10
IT17226
Drain Current, ID -- A
Switching Time, SW Time -- ns
VDS=20V
4.5
10V
8V
4.0
0
ID -- VGS
5.0
Tc=25°C
3
5
7
1.0
2
Drain Current, ID -- A
Ciss
3
2
Coss
100
7
5
Crss
3
td(on)
2
2
1000
7
5
2
3
5
7
10
IT17228
10
0
5
10
15
20
25
30
35
40
Drain to Source Voltage, VDS -- V
45
50
IT17229
No. A2218-2/5
NDUL03N150C
VGS -- Qg
10
Drain Current, ID -- A
Gate to Source Voltage, VGS -- V
4
3
2
7
5
3
2
Operation in
this area is
limited by RDS(on).
0.1
7
5
3
Tc=25°C
Single pulse
2
0
10
20
30
IT17230
PD -- Ta
3.0
2.5
2.0
1.5
1.0
0.5
0
20
40
60
80
100
120
140
Ambient Temperature, Ta -- °C
160
IT17232
EAS -- Ta
120
PD -- Tc
60
Allowable Power Dissipation, PD -- W
3.5
0.01
0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7100 2 3 5 7 1K 2 3 5 710K
IT17231
Drain to Source Voltage, VDS -- V
40
Total Gate Charge, Qg -- nC
Allowable Power Dissipation, PD -- W
1.0
s
0μ
5
1
Avalanche Energy derating factor -- %
μs
ID=2.5A
s
1m s
m
10 0ms tion
10 pera
o
DC
6
0
3
2
7
0
IDP=5A (PW≤10μs)
10
8
7
5
10
9
SOA
10
VDS=200V
ID=2.5A
50
40
30
20
10
0
0
20
40
60
80
100
120
Case Temperature, Tc -- °C
140
160
IT17233
100
80
60
40
20
0
0
25
50
75
100
125
Ambient Temperature, Ta -- °C
150
175
IT17234
No. A2218-3/5
NDUL03N150C
Package Dimensions
NDUL03N150CG
TO-3PF-3L
CASE 340AH
ISSUE O
Unit : mm
1: Gate
2: Drain
3: Source
Ordering & Package Information
Marking
Device
Package
Shipping
memo
NDUL03N150CG
TO-3PF-3L
SC-94
30
pcs./tube
Pb-Free
Electrical Connection
2
03N150
C LOT No.
1
3
No. A2218-4/5
NDUL03N150C
Fig.1 Unclamped Inductive Switching Test Circuit
D
≥50Ω
RG
10V
0V
Fig.2 Switching Time Test Circuit
10V
0V
L
VIN
G
ID=1.25A
RL=152Ω
VIN
NDUL03N150C
S
50Ω
VDD=200V
D
VOUT
PW≤10μs
D.C.≤1%
VDD
G
S
P.G
NDUL03N150C
50Ω
Fig.3 Reverse Recovery Time Test Circuit
NDUL03N150C
D
500μH
G
S
VDD=50V
Driver MOSFET
Note on usage : Since the NDUL03N150C is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No. A2218-5/5
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