Ordering number : ENA2218 NDUL03N150C N-Channel Power MOSFET http://onsemi.com 1500V, 2.5A, 10.5Ω, TO-3PF-3L Features • • • ON-resistance RDS(on)=8Ω (typ.) Input capacitance Ciss=650pF (typ.) 10V drive TO-3PF-3L Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol Conditions Ratings VDSS VGSS ID IDP Limited only maximum temperature Tch=150°C Unit 1500 V ±30 V 2.5 A PW≤10μs, duty cycle≤1% 5 A 3.0 W Allowable Power Dissipation PD 50 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS IAV 34 mJ 2.5 A Avalanche Current *2 Tc=25°C Note : *1 VDD=50V, L=10mH, IAV=2.5A (Fig.1) *2 L≤10mH, single pulse Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Drain to Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS ID=10mA, VGS=0V VDS=1200V, VGS=0V Gate to Source Leakage Current IGSS VGS=±30V, VDS=0V Cutoff Voltage VGS(off) Forward Transfer Admittance | yfs | VDS=10V, ID=1mA VDS=20V, ID=1.25A ID=1.25A, VGS=10V Static Drain to Source On-State Resistance RDS(on) Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) tr Rise Time Turn-OFF Delay Time VDS=30V, f=1MHz See Fig.2 Ratings min typ Unit max 1500 V 2 1 mA ±100 nA 4 1.9 8 V S 10.5 Ω 650 pF 70 pF 20 pF 15 ns 24 ns 140 ns Fall Time td(off) tf Total Gate Charge Qg Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd Diode Forward Voltage VSD IS=2.5A, VGS=0V 0.8 Reverse Recovery Time trr Qrr See Fig.3 350 ns 2220 nC Reverse Recovery Charge VDS=200V, VGS=10V, ID=2.5A 47 ns 34 nC 4.7 nC 15 IS=2.5A, VGS=0V, di/dt=100A/μs nC 1.5 V ORDERING INFORMATION See detailed ordering and shipping information on page 4 of this data sheet. Semiconductor Components Industries, LLC, 2013 September, 2013 92513 TKIM TC-00003021/ No. A2218-1/5 NDUL03N150C ID -- VDS 5.0 4.5 Drain Current, ID -- A 3.5 3.0 2.5 5V 2.0 1.5 25°C 2.5 75°C 2.0 1.5 30 40 14 Tc=75°C 12 10 25°C 8 6 --25°C 4 2 4 6 8 10 12 Source Current, IS -- A 3 °C 25 1.0 = Tc 7 C 5° --2 5 A .25 14 =1 , ID 0V 12 =1 S 10 VG 8 6 4 2 --25 0 °C 75 3 25 50 75 100 125 150 IT17225 IS -- VSD 10 7 5 5 2 16 Case Temperature, Tc -- °C VDS=20V 7 18 IT17224 | yfs | -- ID 10 20 IT17249 Single pulse 0 --50 14 Gate to Source Voltage, VGS -- V 15 RDS(on) -- Tc 20 Static Drain to Source On-State Resistance, RDS(on) -- Ω 16 2 10 22 18 0 5 Gate to Source Voltage, VGS -- V Single pulse ID=1.25A 20 0 0 IT17222 RDS(on) -- VGS 22 0 50 Single pulse VGS=0V 3 2 1.0 7 5 3 2 0.1 7 5 --25°C 20 0.5 C 25°C 10 0 Drain to Source Voltage, VDS -- V Static Drain to Source On-State Resistance, RDS(on) -- Ω 3.0 1.0 VGS=4V 0.5 Forward Transfer Admittance, | yfs | -- S Tc= --25°C 3.5 Tc=7 5° Drain Current, ID -- A 4.0 6V 1.0 3 2 2 0.1 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 SW Time -- ID 1000 VDD=200V VGS=10V 7 5 0 0.2 0.4 0.6 0.8 1.0 Diode Forward Voltage, VSD -- V Ciss, Coss, Crss -- VDS 10000 7 5 1.2 IT17248 f=1MHz 3 Ciss, Coss, Crss -- pF 3 td (off) 2 100 tf 7 5 3 tr 2 10 0.1 0.01 5 7 10 IT17226 Drain Current, ID -- A Switching Time, SW Time -- ns VDS=20V 4.5 10V 8V 4.0 0 ID -- VGS 5.0 Tc=25°C 3 5 7 1.0 2 Drain Current, ID -- A Ciss 3 2 Coss 100 7 5 Crss 3 td(on) 2 2 1000 7 5 2 3 5 7 10 IT17228 10 0 5 10 15 20 25 30 35 40 Drain to Source Voltage, VDS -- V 45 50 IT17229 No. A2218-2/5 NDUL03N150C VGS -- Qg 10 Drain Current, ID -- A Gate to Source Voltage, VGS -- V 4 3 2 7 5 3 2 Operation in this area is limited by RDS(on). 0.1 7 5 3 Tc=25°C Single pulse 2 0 10 20 30 IT17230 PD -- Ta 3.0 2.5 2.0 1.5 1.0 0.5 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C 160 IT17232 EAS -- Ta 120 PD -- Tc 60 Allowable Power Dissipation, PD -- W 3.5 0.01 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7100 2 3 5 7 1K 2 3 5 710K IT17231 Drain to Source Voltage, VDS -- V 40 Total Gate Charge, Qg -- nC Allowable Power Dissipation, PD -- W 1.0 s 0μ 5 1 Avalanche Energy derating factor -- % μs ID=2.5A s 1m s m 10 0ms tion 10 pera o DC 6 0 3 2 7 0 IDP=5A (PW≤10μs) 10 8 7 5 10 9 SOA 10 VDS=200V ID=2.5A 50 40 30 20 10 0 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT17233 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -- °C 150 175 IT17234 No. A2218-3/5 NDUL03N150C Package Dimensions NDUL03N150CG TO-3PF-3L CASE 340AH ISSUE O Unit : mm 1: Gate 2: Drain 3: Source Ordering & Package Information Marking Device Package Shipping memo NDUL03N150CG TO-3PF-3L SC-94 30 pcs./tube Pb-Free Electrical Connection 2 03N150 C LOT No. 1 3 No. A2218-4/5 NDUL03N150C Fig.1 Unclamped Inductive Switching Test Circuit D ≥50Ω RG 10V 0V Fig.2 Switching Time Test Circuit 10V 0V L VIN G ID=1.25A RL=152Ω VIN NDUL03N150C S 50Ω VDD=200V D VOUT PW≤10μs D.C.≤1% VDD G S P.G NDUL03N150C 50Ω Fig.3 Reverse Recovery Time Test Circuit NDUL03N150C D 500μH G S VDD=50V Driver MOSFET Note on usage : Since the NDUL03N150C is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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