PANASONIC DB2441600L

Doc No. TT4-EA-12393
Revision. 3
Product Standards
Schottky Barrier Diode
DB2441600L
DB2441600L
Silicon epitaxial planar type
Unit: mm
2.4
For rectification
0.15
2
 Features
3.8
4.7
 Low forward voltage VF
 Forward current (Average) IF(AV) = 3 A rectification is possible
 Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
1
 Marking Symbol: 4P
1.75
0.85
 Packaging
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
 Absolute Maximum Ratings Ta = 25 C
Parameter
Symbol
Reverse voltage
Forward current (Average) *1
Non-repetitive peak forward surge current
Junction temperature
Operating ambient temperature
Storage temperature
Note:
*2
VR
IF(AV)
IFSM
Tj
Topr
Tstg
1. Cathode
2. Anode
Panasonic
JEITA
Code
Rating
Unit
40
3.0
50
125
-40 to +85
-55 to +125
V
A
A
°C
°C
°C
*1 For embedded alumina substrate (substrate size: 5 cm× 5 cm)
*2 50 Hz sine wave 1 cycle (Non-repetitive peak current)
TMiniP2-F2-B
SC-110A
―
Internal Connection
2
1
Page 1 of 4
Established : 2010-03-01
Revised
: 2013-04-19
Doc No. TT4-EA-12393
Revision. 3
Product Standards
Schottky Barrier Diode
DB2441600L
 Electrical Characteristics Ta = 25 C  3 C
Parameter
Symbol
VF
IR
Ct
Forward voltage
Reverse current
Terminal capacitance
Reverse recovery time
*1
trr
Conditions
Min
IF = 3.0 A
VR = 40 V
VR = 10 V, f = 1 MHz
IF = IR = 100 mA
Irr = 10 mA, RL = 100 
Typ
Max
Unit
0.40
60
95
0.45
300
V
μA
pF
ns
30
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring methods for Diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on
the charge of a human body and the leakage of current from the operating equipment.
3. *1 trr test circuit
Input Pulse
Bias Application Unit (N-50BU)
tp
tr
10%
A
Pulse Generator
(PG-10N)
Rs = 50 Ω
VR
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
Output Pulse
t
IF
trr
90%
tp = 2 μs
tr = 0.35 ns
δ = 0.05
IF = 100 mA
IR = 100 mA
RL = 100 Ω
t
Irr = 10 mA
Page 2 of 4
Established : 2010-03-01
Revised
: 2013-04-19
Doc No. TT4-EA-12393
Revision. 3
Product Standards
Schottky Barrier Diode
DB2441600L
Technical Data ( reference )
IR - VR
IF - VF
1.E-01
1.E+01
Reverse current IR (A)
Forward current IF (A)
Ta = 125 °C
1.E+00
85 °C
1.E-01
1.E-02
25 °C
1.E-03
-40 °C
1.E-04
1.E-05
0.0
Ta = 125 °C
1.E-02
1.E-03
25 °C
1.E-04
1.E-05
1.E-06
-40 °C
1.E-07
1.E-08
0.1
0.2
0.3
0.4
0.5
0.6
0
5
10
Forward voltage VF (V)
20
25
30
35
40
Rth - t
Ct - VR
1000
(1)
Ta = 25 °C
f = 1 MHz
600
Thermal resistance Rth (°C/W)
Terminal capacitance Ct (pF)
15
Reverse voltage VR (V)
700
500
400
300
200
100
(2)
100
0
5
10
15
20
25
30
Reverse voltage VR (V)
35
(3)
Rth(j-l) = 9 °C/W
10
0
(1) Non-heat sink
(2) Mounted on glass epoxy print board.
(3) Mounted on alumina print board.
Board size : 50 mm × 50 mm x 0.8 mm
Solder in : 2 mm x 2 mm
1
0.001
40
0.01
0.1
IF(AV) - Tl
tp/T
3
100
1000
PF(AV) - IF(AV)
IF
DC
2.5
1
10
Time t (s)
2
Forward power dissipation (Average) PF(AV) (W)
3.5
Forward current (Average) IF(AV) (A)
85 °C
tp
T
1/2
VR = 20 V
Tj = 125 °C
2
1.5
1/4
Sine Wave
1
0.5
IF
tp
T
1.5
DC
Sine Wave
1
1/2
1/4
0.5
0
0
0
25
50
75
100
125
Lead temperature Tl (°C)
150
175
0
0.5
1
1.5
2
2.5
3
3.5
Forward current (Average) IF(AV) (A)
Page 3 of 4
Established : 2010-03-01
Revised
: 2013-04-19
Doc No. TT4-EA-12393
Revision. 3
Product Standards
Schottky Barrier Diode
DB2441600L
TMiniP2-F2-B
Unit: mm
2.4±0.1
0.15±0.05
(5°)
4.7±0.1
3.8±0.1
2
0.45±0.10
1
0 to 0.03
(5°)
0 to 0.4
0.85±0.05
1.75±0.10
 Land Pattern (Reference) (Unit: mm)
1.4
4.4
1.4
2.1
Page 4 of 4
Established : 2010-03-01
Revised
: 2013-04-19
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semiconductors described in this book
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