Philips Semiconductors 1880 MHz PA Driver with BFG480W 1880 MHz PA Driver with BFG480W Application Note JL-9902v0 Author Jarek Lucek June 1, 1999 Discrete Semiconductors - Mansfield 171 Forbes Blvd. Mansfield, MA 02048 Abstract th BFG480W, the new 5 generation transistor from Philips Semiconductors, is well suited for PA driver applications in AMPS, TDMA, CDMA and GSM systems. BFG80W’s performance is superior at 1880 MHz, 3.6V applications. Under CW mode, the part is capable of P1dB=20dBm, efficiency of over 40% and typical Gp of 15 dB. BFG480W delivers 20 dBm of linear output power under TDMA with a typical Gp of 15 dB and efficiency of above 30%. Under CDMA mode, BFG480W delivers 19 dBm of linear output power with a typical Gp of above 15 dB and efficiency of 30%. Philips Semiconductors 1880 MHz PA Driver with BFG480W INTRODUCTION BFG480W is Philips Semiconductors’ 5th generation silicon bipolar RF wideband transistor in a SOT343R plastic SMD package. The transistor delivers superior performance at frequencies below 3 GHz. It is manufactured according to the double poly process and characterised by a high transition frequency (fT > 20 GHz) at low sub 3 Volt supply voltages. This application notes describes BFG480W performance at 1880 MHz operation under CW, 2 Tone, TDMA and CDMA conditions. PERFORMANCE OVERVIEW The table below summarises BFG480W’s typical performance capabilities under different signal conditions. System CW 2Tone TDMA CDMA Table 1: *- Vsupply 3.0 Volts 3.6 Volts 3.0 Volts 3.6 Volts 3.0 Volts 3.6 Volts 3.0 Volts 3.6 Volts P1dB or Plinear* dBm Gain** dB Efficiency*** % Icq=10mA Icq=20mA Icq=10mA Icq=20mA Icq=10mA Icq=20mA 19 21 16 17.5 19 20.5 17.5 19 20 21 15.5 16.5 19 20 17.5 18.5 14.5 14.9 15 16 14.5 15 15 15.5 14.7 14.8 15.5 16 15 14.7 15.5 16 37 38 27 27 35 33 30 30 37 36 24 22 34 33 30 27 BFG480W 1880 MHz PA driver performance summary CW - load power @ P1dB 2Tone - load power represents linear average power @ IMD levels reaching –28dBc. TDMA - load power represents linear average power @ ACPR levels reaching –26dBc or ALT levels reaching –45dBc. CDMA load power represents linear average power @ ACPR levels reaching –44dBc with 1.25MHz channel offset, 1.25MHz channel bandwidth and 30KHz Adjacent Channel bandwidth ** - typical Gain at P1dB for CW or Plinear for 2Tone, TDMA, CDMA signals *** - typical Efficiency at P1dB for CW or Plinear for 2Tone, TDMA, CDMA signals. 2 Philips Semiconductors 1880 MHz PA Driver with BFG480W CIRCUIT DESCRIPTION Figure 1 shows a circuit diagram for the 1880 MHz PA driver using the BFG480W. Appendix 1 includes the part list of the demo board. BFG480W, 1880 MHz demoboard VBB C8* 10uF R1 100ohm Vs R2 5.1ohm R4 11ohm R3 30ohm C6 13pF C7 1nF PMBT3904 C3 13pF OUTPUT INPUT VB C1 24pF BFG480W C5 24pF C4 1.3pF C2 3.0pF C8 - external to the demoboard Figure 1: BFG480W common emitter demoboard for class-AB operation at 1880 MHz. 3 Philips Semiconductors 1880 MHz PA Driver with BFG480W BOARD LAYOUT Figure 3 shows the layout of the PCB, which has the following properties: type: double copper-clad PTFE fiber-glass (backside ground) h = 0.64 mm t = 35 µm (Cu cladding, not coated) εr = 6.15 tanδ = 0.0019 Vbase bias Vbb R3 Vsupply Vs R1 R4 Q1 C7 R2 C3 C6 50 Ω INPUT 50 Ω OUTPUT C1 C2 C4 C5 T1 - BFG480W Figure 3: Layout of the 1880 MHz BFG480W PA driver. Appendix 1 contains the part list for the demo board. The position of C2 and C4 components is critical. The artwork file is available on a floppy disc (DXF or Gerber format). Appendix 2 contains Spice model for BFG480W. 4 Philips Semiconductors 1880 MHz PA Driver with BFG480W PERFORMANCE BFG480W was evaluated under 4 different modes of operation. Each mode of operation is summarised below. All measurements were taken with 100% duty cycle signal. CW BFG480W under CW at 1880 MHz and 25 deg. C Vc=3.6V, Icq=1mA, Vbb=0.9V Pin Pout Pout dBm dBm mWatt -5.2 5 3.16 -2.3 10 10.00 1.1 15 31.62 5.64 20 100.00 7.1 21 125.89 8.9 22 158.49 10.9 23 199.53 13.28 24 251.19 16.3 25 316.23 Gain dB 10.2 12.3 13.9 14.36 13.9 13.1 12.1 10.72 8.7 It mA 13 22 39 73 86 103 126 150 184 Eff % 6.76 12.63 22.52 38.05 40.66 42.74 43.99 46.52 47.74 Vc=3.6V, Icq=5mA, Vbb=1.04V Pin Pout Pout dBm dBm mWatt -8.5 5 3.16 -4.5 10 10.00 -0.3 15 31.62 4.7 20 100.00 6.45 21 125.89 8.35 22 158.49 10.47 23 199.53 12.9 24 251.19 16 25 316.23 Gain dB 13.5 14.5 15.3 15.3 14.55 13.65 12.53 11.1 9 It mA 16 26 43 78 91 109 132 160 193 Eff % 5.49 10.68 20.43 35.61 38.43 40.39 41.99 43.61 45.51 Vc=3.6V, Icq=10mA, Vbb=1.11V Pin Pout Pout dBm dBm mWatt -9.9 5 3.16 -5.4 10 10.00 -0.9 15 31.62 4.5 20 100.00 6.1 21 125.89 8.2 22 158.49 10.4 23 199.53 12.8 24 251.19 15.7 25 316.23 Gain dB 14.9 15.4 15.9 15.5 14.9 13.8 12.6 11.2 9.3 It mA 20 28 46 80 94 113 136 164 198 Eff % 4.39 9.92 19.10 34.72 37.20 38.96 40.75 42.55 44.36 Vc=3.6V, Icq=20mA, Vbb=1.16V Pin Pout Pout dBm dBm mWatt -10.9 5 3.16 -6.1 10 10.00 -1.34 15 31.62 4.27 20 100.00 6.2 21 125.89 8.1 22 158.49 10.4 23 199.53 12.8 24 251.19 16.1 25 316.23 Gain dB 15.9 16.1 16.34 15.73 14.8 13.9 12.6 11.2 8.9 It mA 27 34 49 83 98 116 135 167 206 Eff % 3.25 8.17 17.93 33.47 35.68 37.95 41.05 41.78 42.64 It=Ic+Ib, total current draw. 5 Vc=3V, Icq=1mA,Vb=0.9V Pin Pout Pout dBm dBm mWatt -4.9 5 3.16 -2 10 10.00 1.46 15 31.62 6.74 20 100.00 8.4 21 125.89 10.4 22 158.49 12.95 23 199.53 17.3 24 251.19 Gain dB 9.9 12 13.54 13.26 12.6 11.6 10.05 6.7 It mA 13 22 39 78 93 113 137 176 Eff % 8.11 15.15 27.03 42.74 45.12 46.75 48.55 47.57 Vc=3V, Icq=5mA,Vb=1.05V Pin Pout Pout dBm dBm mWatt -8.1 5 3.16 -4.1 10 10.00 0.1 15 31.62 6 20 100.00 7.8 21 125.89 10 22 158.49 12.6 23 199.53 17.2 24 251.19 Gain dB 13.1 14.1 14.9 14 13.2 12 10.4 6.8 It mA 16 25 43 82 97 118 145 186 Eff % 6.59 13.33 24.51 40.65 43.26 44.77 45.87 45.02 Vc=3V, Icq=10mA, Vb=1.1V Pin Pout Pout dBm dBm mWatt -9.5 5 3.16 -5 10 10.00 -0.4 15 31.62 5.8 20 100.00 7.8 21 125.89 9.9 22 158.49 12.5 23 199.53 17.1 24 251.19 Gain dB 14.5 15 15.4 14.2 13.2 12.1 10.5 6.9 Ic mA 19 27 44 84 102 121 148 190 Eff % 5.55 12.35 23.96 39.68 41.14 43.66 44.94 44.07 Vc=3V, Icq=20mA, Vb=1.18V Pin Pout Pout dBm dBm mWatt -11.2 5 3.16 -6.2 10 10.00 -1.3 15 31.62 5.3 20 100.00 7.3 21 125.89 9.6 22 158.49 12.33 23 199.53 17.5 24 251.19 Gain dB 16.2 16.2 16.3 14.7 13.7 12.4 10.67 6.5 It mA 26 34 49 88 103 125 151 197 Eff % 4.05 9.80 21.51 37.88 40.74 42.26 44.05 42.50 Philips Semiconductors 1880 MHz PA Driver with BFG480W CW Efficiency vs. Pout, BFG480W CW @ 3.6V 50.00 45.00 40.00 35.00 Efficiency (%) Gain (dB) Gain vs. Pout, BFG480W CW @ 3.6V 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 30.00 25.00 20.00 15.00 10.00 5.00 0.00 5 7 9 11 13 15 17 19 21 23 25 5 7 9 11 13 Pout (dBm) Icq=1mA Icq=5mA Icq=10mA Icq=20mA Icq=1mA Gain vs. Pout, BFG480W CW @ 3.0V 50.00 15 14 13 12 45.00 21 23 25 Icq=5mA Icq=10mA Icq=20mA 35.00 Efficiency (%) Gain (dB) 19 40.00 11 10 9 8 7 6 30.00 25.00 20.00 15.00 10.00 3 2 1 5.00 0 0.00 5 7 9 11 13 15 17 19 21 23 25 5 7 9 11 13 Pout (dBm) Icq=1mA Icq=5mA 15 17 19 21 23 25 Pout (dBm) Icq=10mA Icq=20mA Icq=1mA Gain vs. Pout, BFG480W CW @ 3.0V and 3.6V 17 Icq=5mA Icq=10mA Icq=20mA Efficiency vs. Pout, BFG480W CW @ 3.6V 50.00 16 15 14 45.00 40.00 13 12 11 10 35.00 Efficiency (%) Gain (dB) 17 Efficiency vs. Pout, BFG480W CW @ 3.0V 17 16 5 4 9 8 7 6 5 30.00 25.00 20.00 15.00 4 3 10.00 2 1 0 5.00 0.00 5 7 9 11 13 15 17 19 Pout (dBm) Icq=10mA @ 3.6V 6 15 Pout (dBm) 21 23 25 5 7 9 11 13 15 17 19 21 Pout (dBm) Icq=10mA, 3V Icq=10mA @ 3.6V Icq=10mA @ 3.0V 23 25 Philips Semiconductors 1880 MHz PA Driver with BFG480W 2 TONE BFG480W under 2Tone at 1880 and 1881 MHz and 25 deg. C Vc=3.6V, Icq=10mA, Vbb=1.1V Pin Pout Pout dBm dBm mWatt -10 5 3.16 -5.5 10 10.00 -0.8 15 31.62 1.4 17 50.12 2.9 18 63.10 4.7 19 79.43 6.5 20 100.00 Gain dB 15 15.5 15.8 15.6 15.1 14.3 13.5 3rd low dBc -40 -38 -37 -30 -25 -20.7 -18 3rd high dBc -45 -42 -38 -30 -25 -20.6 -19 5th low dBc -55 -49 -44 -39 -35 -27 -23 5th high dBc -57 -54 -51 -50 -36 -29 -25 It mA 19 27 43 53 60 72 87 Eff % 4.62 10.29 20.43 26.27 29.21 30.65 31.93 Vc=3.6V, Icq=20mA, Vbb=1.16V Pin Pout Pout dBm dBm mWatt -11.2 5 3.16 -6.3 10 10.00 -1.3 15 31.62 0.9 17 50.12 2.4 18 63.10 4 19 79.43 6 20 100.00 Gain dB 16.2 16.3 16.3 16.1 15.6 15 14 3rd low dBc -46 -38 -32 -27 -24 -19 -17 3rd high dBc -50 -45 -40 -30 -25 -21 -19 5th low dBc -57 -57 -52 -51 -41 -30 -25 5th high dBc -57 -57 -47 -43 -45 -34 -28 It mA 27 34 48 58 64 74 89 Eff % 3.25 8.17 18.30 24.00 27.39 29.82 31.21 Vc=3.0V, Icq=10mA, Vbb=1.1V Pin Pout Pout dBm dBm mWatt -9.8 5 3.16 -5.2 10 10.00 -0.3 15 31.62 2.3 17 50.12 4.1 18 63.10 6.3 19 79.43 9.1 20 100.00 Gain dB 14.8 15.2 15.3 14.7 13.9 12.7 10.9 3rd low dBc -40.9 -38 -34 -24 -20 -17 -15 3rd high dBc -44 -40 -31 -23 -20 -18 -14 5th low dBc -55 -49 -42 -32 -26 -22 -19 5th high dBc -56 -57 -50 -34 -27 -23 -20 It mA 19 27 43 54 63 77 94 Eff % 5.55 12.35 24.51 30.94 33.38 34.39 35.46 Vc=3.0V, Icq=20mA, Vbb=1.17V Pin Pout Pout dBm dBm mWatt -11 5 3.16 -6.1 10 10.00 -1 15 31.62 1.6 17 50.12 3.4 18 63.10 5.4 19 79.43 8.2 20 100.00 Gain dB 16 16.1 16 15.4 14.6 13.6 11.8 3rd low dBc -44 -37 -30.2 -24 -20.3 -17 -15 3rd high dBc -52 -47 -35 -25 -21.4 -18 -15 5th low dBc -55 -56 -48 -38 -29 -23 -19 5th high dBc -55 -56 -46 -46 -33 -26 -21 It mA 27 33 47 58 67 79 95 Eff % 3.90 10.10 22.43 28.80 31.39 33.52 35.09 It=Ic+Ib, total current draw. 7 Philips Semiconductors 1880 MHz PA Driver with BFG480W 2 TONE Gain vs. Pout, BFG480W 2 Tone @ 3.6V Efficiency vs. Pout, BFG480W 2 Tone @ 3.6V 35.00 17 30.00 16 25.00 Efficiency (%) Gain (dB) 15 14 13 12 20.00 15.00 10.00 11 5.00 10 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 0.00 Avg. 2T Pout (dBm) 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 18 19 20 Avg. 2T Pout (dBm) Icq=20mA Icq=10mA Icq=10mA Efficiency vs. Pout, BFG480W 2 Tone @ 3.0V 17 35.00 16 30.00 15 25.00 Efficiency (%) Gain (dB) Gain vs. Pout, BFG480W 2 Tone @ 3.0V 14 13 20.00 15.00 12 10.00 11 5.00 10 0.00 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 5 6 7 8 9 10 Avg. 2T Pout (dBm) Icq=10mA Icq=20mA 7 8 9 10 11 12 13 14 15 16 17 18 13 14 15 16 17 20 5 -15 -20 -20 -25 -25 -30 -30 -35 -40 Icq=20mA Linearity vs. Pout, BFG480W 2 Tone @ 3.0V, 20mA 19 -15 6 7 8 9 10 11 12 13 14 15 16 17 -35 -40 -45 -45 -50 -50 -55 -55 -60 -60 Avg. 2T Pout (dBm) 3rd high 8 12 Icq=10mA IMD (dBc) IMD (dBc) 6 11 Avg. 2T Pout (dBm) Linearity vs. Pout, BFG480W 2 Tone @ 3.6V, 20mA 5 Icq=20mA 3rd low 5th low Avg. 2T Pout (dBm) 5th high 3rd high 3rd low 5th low 5th high 18 19 20 Philips Semiconductors 1880 MHz PA Driver with BFG480W TDMA BFG480W under TDMA at 1880 MHz and 25 deg. C Vc=3.6V, Icq=10mA, Vbb=1.1V Pin Pout Pout dBm dBm mWatt -10 5 3.16 -5.6 10 10.00 -1 15 31.62 1 17 50.12 3.2 19 79.43 4.8 20 100.00 6.5 21 125.89 8.6 22 158.49 Gain dB 15 15.6 16 16 15.8 15.2 14.5 13.4 ACPR low dB -36 -36 -36 -36 -31 -28 -25.5 -24 ACPR high dB -35 -35 -36 -34 -31 -28.5 -25 -24 1st ALT low dB -65 -65 -61 -58 -51 -53 -47 -41 1st ALT high dB -65 -66 -62 -59 -52 -53 -47 -41 2nd ALT low dB -66 -69 -66 -67 -64 -59 -57 -56 2nd ALT high dB -66 -69 -66 -67 -64 -59 -58 -56 It mA 19 27 44 54 72 82 96 114 Eff % 4.62 10.29 19.96 25.78 30.65 33.88 36.43 38.62 Vc=3.6V, Icq=20mA, Vbb=1.16V Pin Pout Pout dBm dBm mWatt -11.2 5 3.16 -6.2 10 10.00 -1.3 15 31.62 0.72 17 50.12 3.1 19 79.43 4.7 20 100.00 6.5 21 125.89 8.5 22 158.49 Gain dB 16.2 16.2 16.3 16.28 15.9 15.3 14.5 13.5 ACPR low dB -35.4 -36 -35 -36 -30 -26.5 -25 -24 ACPR high dB -36 -36 -36 -36 -30 -26 -25 -24 1st ALT low dB -66 -68 -62 -59 -53 -52 -46 -40 1st ALT high dB -66 -68 -62 -59 -53 -52 -46 -40 2nd ALT low dB -67 -70 -65 -67 -64 -58 -58 -55 2nd ALT high dB -66 -70 -65 -67 -64 -58 -58 -56 It mA 26 33 47 58 73 84 98 116 Eff % 3.38 8.42 18.69 24.00 30.23 33.07 35.68 37.95 Vc=3.0V, Icq=10mA, Vbb=1.11V Pin Pout Pout dBm dBm mWatt -9.7 5 3.16 -5.2 10 10.00 -0.5 15 31.62 1.6 17 50.12 4.4 19 79.43 6.1 20 100.00 8.2 21 125.89 10.6 22 158.49 Gain dB 14.7 15.2 15.5 15.4 14.6 13.9 12.8 11.4 ACPR low dB -35 -36 -36 -33 -27 -25 -24 -22 ACPR high dB -35 -36 -35 -33 -27 -25 -23 -22 1st ALT low dB -65 -65 -58 -52 -51 -45 -40 -38 1st ALT high dB -65 -65 -60 -52 -51 -45 -40 -38 2nd ALT low dB -67 -70 -66 -66 -58 -56 -55 -50 2nd ALT high dB -67 -70 -66 -66 -58 -56 -55 -50 It mA 19 27 43 55 73 86 102 124 Eff % 5.55 12.35 24.51 30.37 36.27 38.76 41.14 42.60 Vc=3.0V, Icq=20mA, Vbb=1.17V Pin Pout Pout dBm dBm mWatt -11 5 3.16 -6.2 10 10.00 -1 15 31.62 1.2 17 50.12 4.1 19 79.43 6 20 100.00 8.2 21 125.89 10.6 22 158.49 Gain dB 16 16.2 16 15.8 14.9 14 12.8 11.4 ACPR low dB -36 -36 -34 -33 -27 -25 -23 -23 ACPR high dB -36 -36 -35 -33 -27 -25 -23 -23 1st ALT low dB -64 -68 -62 -54 -52 -45 -40 -38 1st ALT high dB -65 -68 -62 -54 -52 -44 -40 -38 2nd ALT low dB -65 -70 -65 -66 -59 -58 -55 -50 2nd ALT high dB -65 -70 -65 -66 -59 -58 -55 -50 It mA 26 33 48 59 76 89 106 127 Eff % 4.05 10.10 21.96 28.32 34.84 37.45 39.59 41.60 It=Ic+Ib, total current draw. 9 Philips Semiconductors 1880 MHz PA Driver with BFG480W TDMA Gain vs. Pout, BFG480W TDMA @ 3.6V Efficiency vs. Pout, BFG480W TDMA @ 3.6V 45.00 17 40.00 16 35.00 15 Efficiency (%) 14 Gain (dB) 13 12 11 10 9 30.00 25.00 20.00 15.00 8 10.00 7 6 5.00 5 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 0.00 22 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 20 21 22 20 21 Pout (dBm) Pout (dBm) Icq=20mA Icq=10mA Icq=10mA Gain vs. Pout, BFG480W TDMA @ 3.0V Icq=20mA Efficiency vs. Pout, BFG480W TDMA @ 3.0V 17 45.00 16 40.00 15 35.00 14 Efficiency (%) Gain (dB) 13 12 11 10 9 8 30.00 25.00 20.00 15.00 10.00 7 5.00 6 5 0.00 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 5 6 7 8 9 10 11 12 Pout (dBm) Icq=10mA Icq=20mA 7 8 9 10 11 12 13 14 15 16 17 18 19 21 22 5 -20 -20 -25 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 -75 6 7 8 9 16 17 18 19 Icq=20mA 10 11 12 13 14 15 16 17 18 19 -30 -35 -40 -45 -50 -55 -60 -65 -70 -75 Avg Pout (dBm) 10 15 Linearity vs. Pout, BFG480W TDMA @ 3.0V, 20mA 20 ACPR,1st and 2nd ALT (dB) ACPR,1st and 2nd ALT (dB) 6 14 Icq=10mA Linearity vs. Pout, BFG480W TDMA @ 3.6V, 20mA 5 13 Pout (dBm) ACPR high ACPR low 2nd ALT low 2nd ALT high 1st ALT low Avg Pout (dBm) 1st ALT high ACPR high ACPR low 2nd ALT low 2nd ALT high 1st ALT low 1st ALT high 22 Philips Semiconductors 1880 MHz PA Driver with BFG480W CDMA BFG480W under CDMA at 1.88GHz and 25 deg. C Vc=3.6V, Icq=10mA, Vbb=1.07V Pin Pout Pout dBm dBm mWatt -10.1 5 3.16 -5.6 10 10.00 -1 15 31.62 1 17 50.12 2.2 18 63.10 3.4 19 79.43 4.9 20 100.00 Gain dB 15.1 15.6 16 16 15.8 15.6 15.1 ACPR low dB -64 -62 -59 -51 -47 -44 -42 ACPR high dB -70 -69 -61 -51 -47 -44 -42 It mA 20 28 44 55 62 70 81 Eff % 4.39 9.92 19.96 25.31 28.27 31.52 34.29 Vc=3.6V, Icq=20mA, Vbb=1.15V Pin Pout Pout dBm dBm mWatt -11.7 5 3.16 -6.8 10 10.00 -1.7 15 31.62 0.5 17 50.12 1.7 18 63.10 3.1 19 79.43 4.6 20 100.00 Gain dB 16.7 16.8 16.7 16.5 16.3 15.9 15.4 ACPR low dB -70 -61 -54 -49 -46 -43 -41 ACPR high dB -74 -66 -59 -52 -48 -44 -41 It mA 34 39 52 62 68 76 86 Eff % 2.58 7.12 16.89 22.45 25.77 29.03 32.30 Vc=3.0V, Icq=10mA, Vbb=1.11V Pin Pout Pout dBm dBm mWatt -9.7 5 3.16 -5.2 10 10.00 -0.5 15 31.62 1.7 17 50.12 3 18 63.10 4.5 19 79.43 6.3 20 100.00 Gain dB 14.7 15.2 15.5 15.3 15 14.5 13.7 ACPR low dB -62 -62 -55 -46 -43 -41 -39 ACPR high dB -64 -60 -53 -46 -43 -41 -39 It mA 19 27 43 55 62 72 86 Eff % 5.55 12.35 24.51 30.37 33.92 36.77 38.76 Vc=3.0V, Icq=20mA, Vbb=1.17V Pin Pout Pout dBm dBm mWatt -11.8 5 3.16 -6.1 10 10.00 -1.1 15 31.62 1.26 17 50.12 2.6 18 63.10 4.1 19 79.43 6 20 100.00 Gain dB 16.8 16.1 16.1 15.74 15.4 14.9 14 ACPR low dB -67 -59 -52 -46 -43 -41 -39 ACPR high dB -73 -68 -55 -45 -43 -40.8 -39 It mA 27 34 48 58 67 76 89 Eff % 3.90 9.80 21.96 28.80 31.39 34.84 37.45 It=Ic+Ib, total current draw. 11 Philips Semiconductors 1880 MHz PA Driver with BFG480W CDMA Gain vs. Pout, BFG480W CDMA @ 3.6V Efficiency vs. Pout, BFG480W CDMA @ 3.6V 40.00 17 35.00 16.5 16 15.5 30.00 Efficiency (%) 15 Gain (dB) 14.5 14 13.5 13 12.5 12 25.00 20.00 15.00 10.00 11.5 11 5.00 10.5 10 4 6 8 10 12 14 16 18 0.00 20 4 6 8 10 12 14 16 18 20 18 20 Pout (dBm) Pout (dBm) Icq=10mA Icq=20mA Icq=10mA Gain vs. Pout, BFG480W CDMA @ 3.0V Icq=20mA Efficiency vs. Pout, BFG480W CDMA @ 3.0V 17 40.00 16.5 35.00 16 15.5 30.00 15 Efficiency (%) Gain (dB) 14.5 14 13.5 13 12.5 25.00 20.00 15.00 12 10.00 11.5 11 5.00 10.5 10 0.00 4 6 8 10 12 14 16 18 20 4 6 8 10 Pout (dBm) Icq=10mA Icq=20mA Icq=10mA Linearity vs. Pout, BFG480W CDMA @ 3.6V, 20mA 4 6 8 10 12 14 12 14 16 18 Icq=20mA Linearity vs. Pout, BFG480W CDMA @ 3.0V, 20mA 20 4 -35 -35 -40 -40 -45 6 8 10 12 14 -45 ACPR (dBc) ACPR (dBc) -50 -55 -60 -50 -55 -60 -65 -65 -70 -70 -75 -80 -75 Avg Pout (dBm) ACPR high 12 16 Pout (dBm) ACPR low Avg Pout (dBm) ACPR high ACPR low 16 18 20 Philips Semiconductors APPENDIX 1: Part list for BFG480W 1880 MHz PA driver Resistors R1 100 Ω Leaded wirewound, 0.1W. R2 5.1 Ω Philips 0805, 0.1W metal film resistor. R3 30 Ω Philips 0805, 0.1W metal film resistor. R4 11 Ω Philips 0805, 0.1W metal film resistor. Capacitors C1,C5 24 pF ATC100A, DC blocking capacitor C2 3.0 pF ATC100A, matching capacitor C3,C6 13 pF C4 1.3 pF ATC100A, bias and supply decoupling capacitor. ATC100A, matching capacitor C7 1.0 nF C8 10 µF Philips 0805, supply low frequency decoupling capacitor. Philips electrolytic low frequency decoupling capacitor – not part of the demoboard. Transistors T1 BFG480W RF amplifying transistor. Q1 PMBT3904 Biasing and thermal tracking small signal transistor. 13 1880 MHz PA Driver with BFG480W Philips Semiconductors 1880 MHz PA Driver with BFG480W APPENDIX 2: BFG480W Spice and package model (preliminary) 10 12 L=Lcfoot C=Ccfoot 7 L=Lclead C=Cbc 4 L=Lcbond 1 8 11 L=Lbfoot 5 L=Lblead C=Cbfoot 2 REGION= L=Lbbond C=Cbe AREA= REGION= MODEL=BFG480W_die C=Cbpb C=Cmet TEMP= MODEL=D1 AREA= C=Cbpc C=Cce 14 13 3 12 R=Rsub1 R=Rmut R=Rs R=Rsub2 15 L=Lebond 6 L=Lelead 9 L=Lefoot 12 C=Cefoot 12 This model is valid from 540MHz to 6GHz. The reference plane has been put at the test substrate for the package (SOT343R). In the next page you can see the test substrate definition. If you want to use this model without the footprint, just use the model at the node points 7,8, and 9. 14 Philips Semiconductors 1880 MHz PA Driver with BFG480W Spice parameters of the BFG480W param Lbbond " 709.0p" param Lblead " 281.0p" param Lbfoot " 55.00p" param Cbfoot " 58.50f" param Lebond " 57.13p" param Lelead " 69.14p" param Lefoot " 173.9p" param Cefoot " 195.0f" param Lcbond " 559.3p" param Lclead " 280.0p" param Lcfoot " 55.00p" param Ccfoot " 58.50f" param Cbc " 2.000f" param Cbe " 80.00f" param Cce " 80.00f" param Cbpb " 330.0f" param Cbpc " 347.0f" param Cmet " 883.7f" param Rsub1 " 214.7 " param Rsub2 " 321.4 " param Rsub3 " 1.000MEG" param Rmut " 98.84 " param Rs " 217.5u" param D1.IS " 976.6f" param D1.N " 1.272 " param Q1.AREA " 1.000 " param NPN.IS " 176.9a" param NPN.BF " 136.5 " param NPN.NF " 986.3m" param NPN.VAF " 23.00 " param NPN.IKF " 5.900 " param NPN.ISE " 1.189p" param NPN.NE " 2.817 " 15 param NPN.BR " 9.000 " param NPN.NR " 996.8m" param NPN.VAR " 1.750 " param NPN.IKR " 558.5m" param NPN.ISC " 20.66f" param NPN.NC " 1.916 " param NPN.RB " 2.985 " param NPN.IRB " 0.000 " param NPN.RBM " 640.5m" param NPN.RE " 114.5m" param NPN.RC " 967.0m" param NPN.CJE " 1.643p" param NPN.VJE " 900.0m" param NPN.MJE " 267.4m" param NPN.CJC " 545.2f" param NPN.VJC " 504.2m" param NPN.MJC " 254.1m" param NPN.CJS " 917.8f" param NPN.VJS " 421.8m" param NPN.MJS " 57.54m" param NPN.XCJC " 500.0m" param NPN.TR " 150.0p" param NPN.TF " 3.680p" param NPN.XTF " 1.000K" param NPN.VTF " 652.5m" param NPN.ITF " 11.13 " param NPN.PTF " 0.000 " param NPN.FC " 910.0m" param NPN.EG " 1.110 " param NPN.XTI " 4.300 " param NPN.XTB " 500.0m"