800MHz PA Driver with BFG21W

Philips Semiconductors
800MHz PA Driver with BFG21W
800MHz PA Driver with BFG21W
Application Note
JL-9803v2
Author
Jarek Lucek
November 8, 1998
Discrete Semiconductors - Mansfield
171 Forbes Blvd.
Mansfield, MA 02048
Abstract
th
BFG21W, the new 5 generation transistor from Philips Semiconductors, is well suited for PA driver
applications in AMPS, TDMA, CDMA and GSM systems. BFG21W’s performance is superior at 800MHz,
3.0V applications. Under CW mode, the part is capable of P1dB=25dBm, efficiency of 70% and Gp of 17dB.
BFG21W delivers 23dBm of linear output power under TDMA with Gp of 18dB and efficiency of over 50%.
Under CDMA mode, BFG21W delivers 19dBm of linear output power with Gp of 19 dB and efficiency of
35%.
Philips Semiconductors
800MHz PA Driver with BFG21W
INTRODUCTION
BFG21W is Philips Semiconductors’ 5th generation silicon bipolar RF wideband transistor in
SOT343R plastic SMD package. The transistor delivers superior performance at frequencies
below 3 GHz. It is manufactured according to the double poly process and characterised by high
transition frequency (fT > 20 GHz) at low sub 3 Volt supply voltages. This application notes
describes BFG21W performance at 800MHz operation under CW, 2 Tone, TDMA and CDMA
conditions.
PERFORMANCE OVERVIEW
The table below summarises BFG21W performance capabilities under different modes of
operation.
System
CW
2Tone
TDMA
CDMA
Table 1:
*-
Vsupply
3.0 Volts
3.5 Volts
3.0 Volts
3.5 Volts
3.0 Volts
3.5 Volts
3.0 Volts
3.5 Volts
P1dB or Plinear*
dBm
Gain**
dB
Efficiency***
%
Icq=10mA
Icq=20mA
Icq=10mA
Icq=20mA
Icq=10mA
Icq=20mA
24
24.5
19
20.5
21
23
17
19.5
24.5
25
19
20.5
23
24
19
20
18
18.8
19
19.5
18.9
19.4
18.8
19.2
18.2
19
19.5
19.9
18.2
18.8
19
19.5
66
60
43
43
48
52
33
35
68
63
41
40
60
57
39
38
BFG21W 800MHz PA driver performance summary
CW - load power @ P1dB
2Tone - load power represents linear average power @ IMD levels reaching –28dBc.
TDMA - load power represents linear average power @ ACPR levels reaching –26dBc or ALT levels reaching –45dBc.
CDMA load power represents linear average power @ ACPR levels reaching –44dBc with 885kHz channel offset or –56dBc with
1.98MHz channel offset, 1.25MHz channel bandwidth and 30KHz Adjacent Channel bandwidth
** - typical Gain at P1dB for CW or Plinear for 2Tone, TDMA, CDMA signals
*** - typical Efficiency at P1dB for CW or Plinear for 2Tone, TDMA, CDMA signals.
2
Philips Semiconductors
800MHz PA Driver with BFG21W
CIRCUIT DESCRIPTION
Figure 1 shows circuit diagram of 800MHz PA driver with BFG21W. Appendix 1 includes the part list of the
demo board. Red ground represents a common point.
BFG21W, 836MHz demoboard
V cnt
Vs
R3
2Kohm
PMBT3904
C11
22 uF
C8
10nF
R1
11ohm
C7
33pF
BFG21W
C1
33pF
C2
6.8pF
Figure 1: Circuit diagram of the 800MHz PA driver demo board.
3
C12
22uF
C9
10nF
C4
33pF
C10
2.2pF
R2
11ohm
C6
33pF
C3
2.2pF
C5
1.8pF
Philips Semiconductors
800MHz PA Driver with BFG21W
BOARD LAYOUT
Figure 3 shows the layout of the PCB, which has the following properties:
type: FR4 bilayer (backside ground)
h = 0.71 mm
t = 35 µm (Cu cladding, not coated)
εr = 4.6
tanδ = 0.02
30.000
C11
ø1.000
R1
C4
C8
C1
R3
C10
ø.400
Q1
C2
ø1.500
23.30
T1
ø1.300
C3
C6
C7
C5
C12
C9
2
R2
1.800
Figure 3: Layout of the 800MHz BFG21W PA driver.
1
.
All resistors and capacitors used are Philips 0603 SMD types, with exception of C11 and C12. C11 and
C12, used for 2Tone and CDMA performance enhancement, are tantalum types. Appendix 1 contains the
part list of the demo board. The position of components C2, C3, C5 and C10 is critical. Appendix 2 contains
Spice model for BFG21W.
4
Philips Semiconductors
800MHz PA Driver with BFG21W
PERFORMANCE
BFG21W was evaluated under 4 different modes of operation. Each mode of operation is
summarised below. All measurements were taken with 100% duty cycle signal.
CW
BFG21W under CW at 836 MHz and 25 deg. C
Vc=3.5V, Icq=1mA, Vcnt=0.74V
Pin
Pout
Pout
dBm
dBm
mWatt
-6.96
5
3.16
-4.29
10
10.00
-1.38
15
31.62
2.05
20
100.00
3.52
22
158.49
5.97
24
251.19
7.4
25
316.23
9.36
26
398.11
13.04
27
501.19
Gain
dB
11.96
14.29
16.38
17.95
18.48
18.03
17.6
16.64
13.96
It
mA
11.01
20.64
38.89
73.36
93.78
123
140
162.52
200.26
Eff
%
8.21
13.84
23.23
38.95
48.29
58.35
64.54
69.99
71.51
Vc=3V, Icq=1mA,Vcnt=0.74V
Pin
Pout
Pout
dBm
dBm
mWatt
-6.73
5
3.16
-4.09
10
10.00
-1.29
15
31.62
2.53
20
100.00
4.34
22
158.49
6.86
24
251.19
8.97
25
316.23
12.95
26
398.11
14.24
26.27
423.64
Gain
dB
11.73
14.09
16.29
17.47
17.66
17.14
16.03
13.05
12.03
It
mA
11.12
20.9
39.25
73.74
96.22
124.92
146.04
183.8
198.6
Eff
%
9.48
15.95
26.86
45.20
54.91
67.03
72.18
72.20
71.10
Vc=3.5V, Icq=5mA, Vcnt=0.78V
Pin
Pout
Pout
dBm
dBm
mWatt
-11.34
5
3.16
-7.28
10
10.00
-3.29
15
31.62
0.81
20
100.00
2.56
22
158.49
5.3
24
251.19
6.82
25
316.23
8.88
26
398.11
12.72
27
501.19
Gain
dB
16.34
17.28
18.29
19.19
19.44
18.7
18.18
17.12
14.28
It
mA
13.51
23.2
41.56
75.69
96.2
124.5
141.72
163.55
201.86
Eff
%
6.69
12.32
21.74
37.75
47.07
57.65
63.75
69.55
70.94
Vc=3V, Icq=5mA,Vcnt=0.80V
Pin
Pout
Pout
dBm
dBm
mWatt
-10.93
5
3.16
-6.86
10
10.00
-2.88
15
31.62
1.33
20
100.00
3.37
22
158.49
6.28
24
251.19
8.56
25
316.23
12.9
26
398.11
14.14
26.32
428.55
Gain
dB
15.93
16.86
17.88
18.67
18.63
17.72
16.44
13.1
12.18
It
mA
13.43
23.11
41.53
76
97.41
127.71
146.9
187.4
201.68
Eff
%
7.85
14.42
25.38
43.86
54.23
65.56
71.76
70.81
70.83
Vc=3.5V, Icq=10mA, Vcnt=0.79V
Pin
Pout
Pout
dBm
dBm
mWatt
-12.86
5
3.16
-8.28
10
10.00
-3.96
15
31.62
0.59
20
100.00
2.34
22
158.49
5.13
24
251.19
6.53
25
316.23
8.67
26
398.11
12.43
27
501.19
Gain
dB
17.86
18.28
18.96
19.41
19.66
18.87
18.47
17.33
14.57
It
mA
16.14
25.23
43.38
76.51
98.69
126.1
141.68
163.57
200.9
Eff
%
5.60
11.32
20.83
37.34
45.88
56.91
63.77
69.54
71.28
Vc=3V, Icq=10mA, Vcnt=0.80V
Pin
Pout
Pout
dBm
dBm
mWatt
-12.98
5
3.16
-8.23
10
10.00
-3.81
15
31.62
1.1
20
100.00
3.09
22
158.49
5.99
24
251.19
8.37
25
316.23
12.4
26
398.11
13.95
26.31
427.56
Gain
dB
17.98
18.23
18.81
18.9
18.91
18.01
16.63
13.6
12.36
Ic
mA
16.29
25.31
43.2
77.12
98.59
126.83
148.15
184.41
201.8
Eff
%
6.47
13.17
24.40
43.22
53.59
66.02
71.15
71.96
70.62
Vc=3.5V, Icq=20mA, Vcnt=0.80V
Pin
Pout
Pout
dBm
dBm
mWatt
-14.61
5
3.16
-9.57
10
10.00
-4.88
15
31.62
0.3
20
100.00
2
22
158.49
4.83
24
251.19
6.33
25
316.23
8.38
26
398.11
11.87
27
501.19
Gain
dB
19.61
19.57
19.88
19.7
20
19.17
18.67
17.62
15.13
It
mA
24.52
31.25
47.13
78.74
100
127.55
143.54
164.52
198.5
Eff
%
3.68
9.14
19.17
36.29
45.28
56.27
62.94
69.14
72.14
Vc=3V, Icq=20mA, Vcnt=0.81V
Pin
Pout
Pout
dBm
dBm
mWatt
-14.53
5
3.16
-9.3
10
10.00
-4.55
15
31.62
0.79
20
100.00
2.94
22
158.49
5.74
24
251.19
8.27
25
316.23
12.26
26
398.11
14.14
26.36
432.51
Gain
dB
19.53
19.3
19.55
19.21
19.06
18.26
16.73
13.74
12.22
It
mA
23.22
29.61
45.34
78.5
99.44
127.36
149.37
185.32
206.22
Eff
%
4.54
11.26
23.25
42.46
53.13
65.74
70.57
71.61
69.91
It=Ic+Ib, total current draw.
5
Philips Semiconductors
800MHz PA Driver with BFG21W
CW
Gain vs. Pout, BFG21W CW @ 3.5V
Efficiency vs. Pout, BFG21W CW @ 3.5V
21
75.00
70.00
20
65.00
19
60.00
55.00
50.00
Efficiency (%)
Gain (dB)
18
17
16
15
14
45.00
40.00
35.00
30.00
25.00
20.00
13
15.00
10.00
12
5.00
11
0.00
5
7.5
10
12.5
15
17.5
20
22.5
25
27.5
30
5
7.5
10
12.5
15
Pout (dBm)
Icq=1mA
Icq=5mA
17.5
20
22.5
25
27.5
30
Pout (dBm)
Icq=10mA
Icq=20mA
Icq=1mA
Gain vs. Pout, BFG21W CW @ 3.0V
Icq=5mA
Icq=10mA
Icq=20mA
Efficiency vs. Pout, BFG21W CW @ 3.0V
21
75.00
70.00
20
65.00
19
60.00
55.00
Efficiency (%)
Gain (dB)
18
17
16
15
14
50.00
45.00
40.00
35.00
30.00
25.00
20.00
13
15.00
10.00
12
5.00
11
0.00
5
7.5
10
12.5
15
17.5
20
22.5
25
27.5
30
5
7.5
10
12.5
15
Pout (dBm)
Icq=1mA
Icq=5mA
17.5
20
22.5
25
27.5
30
Pout (dBm)
Icq=10mA
Icq=20mA
Icq=1mA
Gain vs. Pout, BFG21W CW @ 3.0V and 3.5V
Icq=5mA
Icq=10mA
Icq=20mA
Efficiency vs. Pout, BFG21W CW @ 3.5V
21
75.00
70.00
20
65.00
19
60.00
55.00
Efficiency (%)
Gain (dB)
18
17
16
15
14
50.00
45.00
40.00
35.00
30.00
25.00
20.00
13
15.00
10.00
12
5.00
11
0.00
5
7.5
10
12.5
15
17.5
20
22.5
Pout (dBm)
Icq=10mA @ 3.5V
6
25
27.5
30
5
7.5
10
12.5
15
17.5
20
22.5
25
Pout (dBm)
Icq=10mA, 3V
Icq=10mA @ 3.5V
Icq=10mA @ 3.0V
27.5
30
Philips Semiconductors
800MHz PA Driver with BFG21W
2 TONE
BFG21W under 2tone at 836 MHz and 25 deg. C
Vc=3.5V, Icq=10mA, Vcnt=0.79V
Pin
Pout
Pout
dBm
dBm
mWatt
-13.2
5
3.16
-8.6
10
10.00
-4.4
15
31.62
-2.4
17
50.12
-0.5
19
79.43
0.55
20
100.00
1.65
21
125.89
4.2
23
199.53
Gain
dB
18.2
18.6
19.4
19.4
19.5
19.45
19.35
18.8
3rd low
dBc
-43
-38
-37
-37
-37
-34
-29
-21
3rd high
dBc
-43
-38
-37
-37
-36
-33
-29
-20
5th low
dBc
-57
-52
-48
-47
43
-40
-37
-38
5th high
dBc
-57
-52
-48
-47
-43
-40
-37
-37
It
mA
16.3
25
41
51
63
71
79
101
Eff
%
5.54
11.43
22.04
28.08
36.02
40.24
45.53
56.44
Vc=3.5V, Icq=20mA, Vcnt=0.79V
Pin
Pout
Pout
dBm
dBm
mWatt
-14.8
5
3.16
-9.6
10
10.00
-5
15
31.62
-3.1
17
50.12
-0.95
19
79.43
0.1
20
100.00
1.22
21
125.89
4
23
199.53
Gain
dB
19.8
19.6
20
20.1
19.95
19.9
19.78
19
3rd low
dBc
-49
-43
-41
-43
-46
-35
-29
-21
3rd high
dBc
-48.5
-42
-40
-43
-45
-35
-29
-21
5th low
dBc
-59
-60
-50
-47
-44
-41
-39
-41
5th high
dBc
-59
-59
-50
-47
-43
-41
-39
-40
It
mA
25
31.6
47
56
67
74
83
103
Eff
%
3.61
9.04
19.22
25.57
33.87
38.61
43.34
55.35
Vc=3.0V, Icq=10mA, Vcnt=0.78V
Pin
Pout
Pout
dBm
dBm
mWatt
-12.8
5
3.16
-8.3
10
10.00
-4.12
15
31.62
-2.2
17
50.12
0
19
79.43
1.1
20
100.00
2.4
21
125.89
5.6
23
199.53
Gain
dB
17.8
18.3
19.12
19.2
19
18.9
18.6
17.4
3rd low
dBc
-40
-35
-34
-33
-30
-27
-23
-15
3rd high
dBc
-40
-35
-34
-32
-30
-26
-23
-16
5th low
dBc
-56
-52
-47
43
-37
-35
35
-30
5th high
dBc
-55
-52
-47
-43
-37
-35
-34
-30
It
mA
16
23.6
40
49
62
69
79
103
Eff
%
6.59
14.12
26.35
34.09
42.71
48.31
53.12
64.57
Vc=3.0V, Icq=20mA, Vcnt=0.81V
Pin
Pout
Pout
dBm
dBm
mWatt
-14.55
5
3.16
-9.46
10
10.00
-4.8
15
31.62
-2.6
17
50.12
-0.5
19
79.43
0.8
20
100.00
2.03
21
125.89
5.3
23
199.53
Gain
dB
19.55
19.46
19.8
19.6
19.5
19.2
18.97
17.7
3rd low
dBc
-50
-43
-45
-55
-34
-28
-24
-16
3rd high
dBc
-49
-43
-45
-55
-34
-28
-23
-16
5th low
dBc
-59
-59
-48
-46
-40
-38
-39
-33
5th high
dBc
-58
-59
-48
-46
-40
-38
-39
-32
It
mA
24
30
44
54
65
74
82
105
Eff
%
4.39
11.11
23.96
30.94
40.73
45.05
51.18
63.34
It=Ic+Ib, total current draw.
7
Philips Semiconductors
800MHz PA Driver with BFG21W
2 TONE
Gain vs. Pout, BFG21W 2 Tone @ 3.5V
Efficiency vs. Pout, BFG21W 2 Tone @ 3.5V
65.00
60.00
21
55.00
20.5
50.00
45.00
Efficiency (%)
Gain (dB)
20
19.5
19
18.5
40.00
35.00
30.00
25.00
20.00
18
15.00
17.5
10.00
17
5.00
5
7.5
10
12.5
15
17.5
20
22.5
25
0.00
Pout (dBm)
5
7.5
10
12.5
15
17.5
20
22.5
25
22.5
25
Pout (dBm)
Icq=20mA
Icq=10mA
Icq=10mA
Gain vs. Pout, BFG21W 2 Tone @ 3.0V
Icq=20mA
Efficiency vs. Pout, BFG21W 2 Tone @ 3.0V
21
65.00
60.00
20.5
55.00
50.00
20
Efficiency (%)
45.00
Gain (dB)
19.5
19
18.5
40.00
35.00
30.00
25.00
20.00
18
15.00
10.00
17.5
5.00
17
0.00
5
7.5
10
12.5
15
17.5
20
22.5
25
5
7.5
10
12.5
Pout (dBm)
Icq=10mA
Icq=20mA
Icq=10mA
Linearity vs. Pout, BFG21W 2 Tone @ 3.5V, 20mA
7.5
10
12.5
15
17.5
20
22.5
5
-15
-15
-20
-20
-25
-25
-30
-30
-35
-35
-40
-45
20
Icq=20mA
7.5
10
12.5
15
17.5
20
-40
-45
-50
-50
-55
-55
-60
-60
-65
-65
2T avg. Pout (dBm)
2T avg. Pout (dBm)
3rd high
8
17.5
Linearity vs. Pout, BFG21W 2 Tone @ 3.0V, 20mA
25
IMD (dBc)
IMD (dBc)
5
15
Pout (dBm)
3rd low
5th low
5th high
3rd high
3rd low
5th low
5th high
22.5
25
Philips Semiconductors
800MHz PA Driver with BFG21W
TDMA
BFG21W under TDMA at 836 MHz and 25 deg. C
Vc=3.5V, Icq=10mA, Vcnt=0.79V
Pin
Pout
Pout
dBm
dBm
mWatt
-12.93
5
3.16
-8.63
10
10.00
-4.44
15
31.62
0.43
20
100.00
2.45
22
158.49
3.6
23
199.53
5.21
24
251.19
7.04
25
316.23
Gain
dB
17.93
18.63
19.44
19.57
19.55
19.4
18.79
17.96
ACPR low
dB
-36.8
-36.1
-37.3
-35.5
-32.3
-29.3
-26
-22.9
ACPR high
dB
-36
-33.4
-37.1
-36.9
-31.9
-29.3
-25.3
-23
1st ALT low
dB
-70.5
-64.8
-59.5
-55.9
-51.2
-50.8
-50.3
-45.8
1st ALT high
dB
-70.1
-66.2
-60.9
-56.9
-51.9
-51.5
-50.9
-45.8
2nd ALT low
dB
-66.9
-68.2
-70
-68.2
-65.2
-60.4
-57.3
-56.3
2nd ALT high
dB
-66
-67.9
-70
-68.4
-65.6
-60.7
-58.1
-56.9
It
mA
17.4
25
42.88
75.75
97.8
108.43
124.48
141.98
Eff
%
5.19
11.43
21.07
37.72
46.30
52.58
57.65
63.64
Vc=3.5V, Icq=20mA, Vcnt=0.79V
Pin
Pout
Pout
dBm
dBm
mWatt
-14.22
5
3.16
-9.3
10
10.00
-4.75
15
31.62
0.08
20
100.00
2.22
22
158.49
3.54
23
199.53
5.2
24
251.19
6.88
25
316.23
Gain
dB
19.22
19.3
19.75
19.92
19.78
19.46
18.8
18.12
ACPR low
dB
-35.1
-36.8
-35.2
-35.5
-32.1
-28.1
-26.9
-23.2
ACPR high
dB
-35.6
-35.4
-36.6
-34.3
-31.6
-28.7
-26.7
-23.9
1st ALT low
dB
-53.6
-54.4
-60.3
-55.1
-50.9
-49.9
-53.4
-46.8
1st ALT high
dB
-54.7
-54.2
-61.7
-56.3
-51.4
-50.3
-53.9
-47
2nd ALT low
dB
-63.2
-61.9
-70.5
-69.6
-64.5
-60.1
-58.8
-57.8
2nd ALT high
dB
-65.8
-63
-70.9
-68.7
-65.1
-59.5
-59.3
-58.2
It
mA
22.42
29.6
46.34
77.9
98.6
111
125.6
142.9
Eff
%
4.03
9.65
19.50
36.68
45.93
51.36
57.14
63.23
Vc=3.0V, Icq=10mA, Vcnt=0.78V
Pin
Pout
Pout
dBm
dBm
mWatt
-12.85
5
3.16
-8.16
10
10.00
-4.01
15
31.62
0.93
20
100.00
3.54
22
158.49
5.14
23
199.53
7.13
24
251.19
10.06
25
316.23
Gain
dB
17.85
18.16
19.01
19.07
18.46
17.86
16.87
14.94
ACPR low
dB
-35.7
-36.8
-36.4
-34
-28.1
-25.3
-21.5
-19.9
ACPR high
dB
-37.8
-36.3
-35.3
-33.6
-28
-24.8
-21.4
-19.4
1st ALT low
dB
-68.9
-63.8
-59.9
-51.2
-48.6
-48.7
-40.6
-34.6
1st ALT high
dB
-68.8
-64.1
-62
-52.2
-48.9
-48.1
-40.1
-34
2nd ALT low
dB
-65.5
-67.5
-69.2
-68.6
-59.7
-56.7
-54.6
-48.2
2nd ALT high
dB
-66.2
-67.4
-69.5
-69.5
-59.5
-57.5
-54.9
-47.8
It
mA
16
25
42.57
75.34
97.5
111
129.3
155.3
Eff
%
6.59
13.33
24.76
44.24
54.18
59.92
64.76
67.87
Vc=3.0V, Icq=20mA, Vcnt=0.81V
Pin
Pout
Pout
dBm
dBm
mWatt
-13.79
5
3.16
-8.87
10
10.00
-4.26
15
31.62
0.65
20
100.00
3.2
22
158.49
4.81
23
199.53
6.82
24
251.19
9.67
25
316.23
Gain
dB
18.79
18.87
19.26
19.35
18.8
18.19
17.18
15.33
ACPR low
dB
-36.2
-37.3
-37
-34.5
-29.4
-26.1
-22.9
-20
ACPR high
dB
-36.1
-36.5
-37
-34.1
-28.8
-25.9
-22.4
-20
1st ALT low
dB
-53
-64.9
-59.8
-52
-50.6
-51.1
-43.2
-34.7
1st ALT high
dB
-53.1
-65.5
-60.4
-53
-50.6
-51.5
-42.2
-34.6
2nd ALT low
dB
-60.5
-68.5
-69.9
-67.4
-60.1
-58.4
-57.2
-50.7
2nd ALT high
dB
-61.8
-68.8
-70.1
-67.9
-60
-58.7
-57.3
-49.8
It
mA
19.13
26.89
44.14
76.46
97.56
111.56
129.42
153.52
Eff
%
5.51
12.40
23.88
43.60
54.15
59.62
64.70
68.66
It=Ic+Ib, total current draw.
9
Philips Semiconductors
800MHz PA Driver with BFG21W
TDMA
Gain vs. Pout, BFG21W TDMA @ 3.5V
Efficiency vs. Pout, BFG21W TDMA @ 3.5V
70.00
21
65.00
60.00
20
55.00
50.00
Efficiency (%)
Gain (dB)
19
18
17
16
45.00
40.00
35.00
30.00
25.00
20.00
15.00
15
10.00
5.00
14
5
7.5
10
12.5
15
17.5
20
22.5
0.00
25
5
7.5
10
12.5
15
17.5
20
22.5
25
22.5
25
Pout (dBm)
Pout (dBm)
Icq=20mA
Icq=10mA
Icq=10mA
Gain vs. Pout, BFG21W TDMA @ 3.0V
Icq=20mA
Efficiency vs. Pout, BFG21W TDMA @ 3.0V
21
70.00
65.00
20
60.00
55.00
50.00
Efficiency (%)
Gain (dB)
19
18
17
16
45.00
40.00
35.00
30.00
25.00
20.00
15.00
15
10.00
5.00
14
0.00
5
7.5
10
12.5
15
17.5
20
22.5
25
5
7.5
10
12.5
Pout (dBm)
Icq=10mA
Icq=20mA
Icq=10mA
Linearity vs. Pout, BFG21W TDMA @ 3.5V, 20mA
7.5
10
12.5
15
17.5
20
22.5
5
-20
-20
-25
-25
-30
-35
-40
-45
-50
-55
-60
-65
-70
-75
7.5
20
Icq=20mA
10
12.5
15
17.5
20
22.5
-30
-35
-40
-45
-50
-55
-60
-65
-70
-75
Avg Pout (dBm)
10
17.5
Linearity vs. Pout, BFG21W TDMA @ 3.0V, 20mA
25
ACPR,1st and 2nd ALT (dB)
ACPR,1st and 2nd ALT (dB)
5
15
Pout (dBm)
ACPR high
ACPR low
2nd ALT low
2nd ALT high
1st ALT low
Avg Pout (dBm)
1st ALT high
ACPR high
ACPR low
2nd ALT low
2nd ALT high
1st ALT low
1st ALT high
25
Philips Semiconductors
800MHz PA Driver with BFG21W
CDMA
BFG21W under CDMA at 836 MHz and 25 deg. C
Vc=3.5V, Icq=10mA, Vcnt=0.79V
Pin
Pout
Pout
dBm
dBm
mWatt
-13.14
5
3.16
-8.36
10
10.00
-4.04
15
31.62
-1.2
18
63.10
-0.23
19
79.43
0.75
20
100.00
3.1
22
158.49
Gain
dB
18.14
18.36
19.04
19.2
19.23
19.25
18.9
ACPR low
dB
-59.83
-54.86
-54.19
-53.5
-50.6
-45.69
-37.6
ACPR high
dB
-60.35
-55.19
-54.44
-53.5
-51.2
-46.05
-38
1st ALT low
dB
-71.23
-72.27
-70.22
-64.9
-61.4
-59.32
-57
1st ALT high
dB
-71.24
-72.51
-70.75
-65.5
-61.8
-59.29
-58
It
mA
16.3
25
42
58
65.5
74.5
95
Eff
%
5.54
11.43
21.51
31.08
34.65
38.35
47.67
Vc=3.5V, Icq=20mA, Vcnt=0.79V
Pin
Pout
Pout
dBm
dBm
mWatt
-14.53
5
3.16
-9.36
10
10.00
-4.95
15
31.62
-1.5
18
63.10
-0.5
19
79.43
0.45
20
100.00
2.94
22
158.49
Gain
dB
19.53
19.36
19.95
19.5
19.5
19.55
19.06
ACPR low
dB
-65.81
-60.63
-62.19
-61
-53.6
-46.23
-38.3
ACPR high
dB
-65.42
-60.46
-61.29
-61.2
-54.2
-46.25
-38.4
1st ALT low
dB
-72.42
-74.97
-70.81
-66.2
-63.5
-60.71
-61
1st ALT high
dB
-72.42
-74.97
-70.92
-66.4
-66.7
-60.29
-62
It
mA
23.41
30.25
45.6
61
68
76.14
96
Eff
%
3.86
9.45
19.81
29.55
33.38
37.52
47.17
Vc=3.0V, Icq=10mA, Vcnt=0.78V
Pin
Pout
Pout
dBm
dBm
mWatt
-12.46
5
3.16
-8.19
10
10.00
-3.98
15
31.62
-0.65
18
63.10
0.45
19
79.43
1.23
20
100.00
4.54
22
158.49
Gain
dB
17.46
18.19
18.98
18.65
18.55
18.77
17.46
ACPR low
dB
-57.69
-52.7
-50
-47.2
-43.8
-39.18
-33.3
ACPR high
dB
-57.99
-53.19
-50.87
-47.7
-44.3
-39.23
-33.1
1st ALT low
dB
-71.3
-72.76
-67.84
-58.9
-57
-56.1
-49.4
1st ALT high
dB
-71.3
-72.72
-67.79
-58.9
-57.1
-56.15
-49.3
It
mA
15.6
24
41
57.7
66
73.9
97.3
Eff
%
6.76
13.89
25.71
36.45
40.12
45.11
54.30
Vc=3.0V, Icq=20mA, Vcnt=0.81V
Pin
Pout
Pout
dBm
dBm
mWatt
-13.9
5
3.16
-9.11
10
10.00
-4.19
15
31.62
-1.1
18
63.10
0
19
79.43
1.06
20
100.00
4.28
22
158.49
Gain
dB
18.9
19.11
19.19
19.1
19
18.94
17.72
ACPR low
dB
-64.91
-61.73
-65.3
-51.1
-45.8
-39.99
-33.5
ACPR high
dB
-64.57
-61.53
-64.6
-51.5
-46.3
-39.9
-33.5
1st ALT low
dB
-71.62
-73.2
-64.7
-62.2
-60.2
-58.79
-50.7
1st ALT high
dB
-71.62
-73.21
-64.49
-62.5
-60.6
-58.56
-50.8
It
mA
20.39
27.7
43.44
60.5
67
75.47
98
Eff
%
5.17
12.03
24.27
34.76
39.52
44.17
53.91
It=Ic+Ib, total current draw.
11
Philips Semiconductors
800MHz PA Driver with BFG21W
CDMA
Gain vs. Pout, BFG21W CDMA @ 3.5V
Efficiency vs. Pout, BFG21W CDMA @ 3.5V
21
50.00
20.5
45.00
20
40.00
Efficiency (%)
Gain (dB)
55.00
19.5
19
18.5
35.00
30.00
25.00
20.00
18
15.00
17.5
10.00
5.00
17
4
6
8
10
12
14
16
18
20
0.00
22
4
6
8
10
12
14
16
18
20
22
20
22
20
22
Pout (dBm)
Pout (dBm)
Icq=10mA
Icq=20mA
Icq=10mA
Gain vs. Pout, BFG21W CDMA @ 3.0V
Icq=20mA
Efficiency vs. Pout, BFG21W CDMA @ 3.0V
21
55.00
50.00
20.5
45.00
20
Efficiency (%)
40.00
Gain (dB)
19.5
19
18.5
35.00
30.00
25.00
20.00
15.00
18
10.00
17.5
5.00
17
0.00
4
6
8
10
12
14
16
18
20
22
4
6
8
10
Pout (dBm)
Icq=10mA
Icq=20mA
8
10
12
14
16
18
22
4
-30
-30
-35
-35
-40
-40
-45
-50
-55
-60
-65
18
Icq=20mA
6
8
10
12
14
16
18
-45
-50
-55
-60
-65
-70
-70
-75
-75
-80
-80
Avg Pout (dBm)
ACPR high
12
16
Linearity vs. Pout, BFG21W CDMA @ 3.0V, 20mA
20
ACPR,1st ALT (dB)
ACPR,1st ALT (dB)
6
14
Icq=10mA
Linearity vs. Pout, BFG21W CDMA @ 3.5V, 20mA
4
12
Pout (dBm)
ACPR low
1st ALT low
Avg Pout (dBm)
1st ALT high
ACPR high
ACPR low
1st ALT low
1st ALT high
Philips Semiconductors
APPENDIX 1:
800MHz PA Driver with BFG21W
Part list for BFG21W 800MHz PA driver
Resistors
R1
11 Ω
Philips 0805, 0.1W metal film resistor.
R2
11 Ω
Philips 0805, 0.1W metal film resistor.
R3
2 KΩ
Philips 0805, 0.1W metal film resistor.
C1, C6
33 pF
Philips 0603, DC blocking capacitor
C2
6.8 pF
Philips 0603, IRL matching capacitor
C3
2.2 pF
Philips 0603, output matching capacitor
C4, C7
33 pF
Philips 0603, bias and supply decoupling
capacitor
C5
1.8 pF
Philips 0603, output matching capacitor
C8, C9
10 nF
Philips 0603, bias and supply low
frequency decoupling capacitor
C10
2.2 pF
Philips 0603, IRL matching capacitor
C11, C12
22 µF
AVX tantalum, bias and supply low
frequency decoupling capacitor
T1
BFG21W
RF amplifying transistor.
Q1
PMBT3904
Biasing and thermal tracking small signal
transistor.
Capacitors
Transistors
13
Philips Semiconductors
800MHz PA Driver with BFG21W
APPENDIX 2:
Spice parameters of the BFG21W
.SUBCKT BFG21W 10 11 12
Lbbond 2 5 7.209E-10
Lblead 5 8 2.251E-10
Lbfoot 8 11 1.1E-10
Cbfoot 8 12 1.17E-13
Lebond 3 6 5.15E-11
Lelead 6 9 6.914E-11
Lefoot 9 12 1.739E-10
Cefoot 9 12 1.95E-13
Lcbond 1 4 5.711E-10
Lclead 4 7 2.251E-10
Lcfoot 7 10 1.1E-10
Ccfoot 7 12 1.17E-13
Cbc 5 4 2E-15
Cbe 5 6 8E-14
Cce 4 6 8E-14
Cbpb 2 14 3.3E-13
Cbpc 1 13 3.47E-13
Cmet 1 3 1.7E-12
Rsub1 14 15 249.2
Rsub2 13 15 464.4
Rmut 3 15 100
Dio 16 1
+ D1
Rs 15 16 3.5
.MODEL D1 D
+ IS = 4.99E-13
+ N = 1.189
14
Q1 1 2 3 3 NPN
+ AREA = 1
.MODEL NPN NPN
+ IS = 3.835E-16
+ BF = 92
+ NF = 1
+ VAF = 35
+ IKF = 2.8
+ ISE = 9.005E-13
+ NE = 2.262
+ BR = 8.9
+ NR = 1.009
+ VAR = 2.25
+ IKR = 0.6507
+ ISC = 2.503E-15
+ NC = 1.209
+ RB = 1.492
+ IRB = 0
+ RBM = 0.3202
+ RE = 0.3429
+ RC = 0.8
+ CJE = 3.026E-12
+ VJE = 0.9
+ MJE = 0.2861
+ CJC = 1.041E-12
+ VJC = 0.6964
+ MJC = 0.308
+ CJS = 1.844E-12
+ VJS = 0.4237
+ MJS = 0.2606
+ XCJC = 0.5
+ TR = 1.5E-10
+ TF = 5.05E-12
+ XTF = 74
+ VTF = 0.8
+ ITF = 6.5
+ PTF = 0
+ FC = 0.875
+ EG = 1.11
+ XTI = 4.3
+ XTB = 0.5
.END
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