IGBT

NGTB30N60SWG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications, offering
both low on state voltage and minimal switching loss. The IGBT is
well suited for half bridge resonant applications. Incorporated into the
device is a soft and fast co−packaged free wheeling diode with a low
forward voltage.
http://onsemi.com
30 A, 600 V
VCEsat = 1.9 V
Eoff = 0.54 mJ
Features
•
•
•
•
•
Low Saturation Voltage using Trench with Fieldstop Technology
Low Switching Loss Reduces System Power Dissipation
Low Gate Charge
Soft, Fast Free Wheeling Diode
These are Pb−Free Devices
C
Typical Applications
• Inverter Welding
• UPS Systems
G
E
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−emitter voltage
VCES
600
V
Collector current
@ TC = 25°C
@ TC = 100°C
IC
Pulsed collector current, Tpulse
limited by TJmax
Diode forward current
@ TC = 25°C
@ TC = 100°C
A
60
30
ICM
120
A
IF
G
C
TO−247
CASE 340L
STYLE 4
E
A
60
30
Diode pulsed current, Tpulse limited
by TJmax
IFM
120
A
Gate−emitter voltage
VGE
$20
Power Dissipation
@ TC = 25°C
@ TC = 100°C
PD
Operating junction temperature
range
TJ
−55 to +150
°C
Storage temperature range
Tstg
−55 to +150
°C
Lead temperature for soldering, 1/8″
from case for 5 seconds
TSLD
260
°C
MARKING DIAGRAM
V
W
189
76
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
30N60S
AYWWG
A
Y
WW
G
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
NGTB30N60SWG
© Semiconductor Components Industries, LLC, 2014
July, 2014 − Rev. 0
1
Package
Shipping
TO−247 30 Units / Rail
(Pb−Free)
Publication Order Number:
NGTB30N60SW/D
NGTB30N60SWG
THERMAL CHARACTERISTICS
Symbol
Value
Unit
Thermal resistance junction−to−case, for IGBT
Rating
RqJC
0.66
°C/W
Thermal resistance junction−to−case, for Diode
RqJC
2.73
°C/W
Thermal resistance junction−to−ambient
RqJA
40
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
VGE = 0 V, IC = 500 mA
V(BR)CES
600
−
−
V
VGE = 15 V, IC = 30 A
VGE = 15 V, IC = 30 A, TJ = 150°C
VCEsat
−
−
1.9
2.6
2.2
−
V
VGE = VCE, IC = 150 mA
VGE(th)
4.5
5.5
6.5
V
Collector−emitter cut−off current, gate−
emitter short−circuited
VGE = 0 V, VCE = 600 V
VGE = 0 V, VCE = 600 V, TJ = 150°C
ICES
−
−
−
−
0.2
2
mA
Gate leakage current, collector−emitter
short−circuited
VGE = 20 V , VCE = 0 V
IGES
−
−
100
nA
Cies
−
2040
−
pF
Coes
−
70
−
Cres
−
50
−
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
Collector−emitter saturation voltage
Gate−emitter threshold voltage
DYNAMIC CHARACTERISTIC
Input capacitance
Output capacitance
VCE = 20 V, VGE = 0 V, f = 1 MHz
Reverse transfer capacitance
Gate charge total
nC
Qg
90
Qge
19
Qgc
45
td(on)
57
tr
32
td(off)
109
tf
91
Turn−on switching loss
Eon
0.75
mJ
Turn−off switching loss
Eoff
0.54
mJ
td(on)
56
ns
tr
34
Gate to emitter charge
VCE = 480 V, IC = 30 A, VGE = 15 V
Gate to collector charge
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−on delay time
Rise time
Turn−off delay time
Fall time
TJ = 25°C
VCC = 400 V, IC = 30 A
Rg = 10 W
VGE = 0 V/ 15 V
Turn−on delay time
Rise time
Turn−off delay time
Fall time
Turn−on switching loss
TJ = 150°C
VCC = 400 V, IC = 30 A
Rg = 10 W
VGE = 0 V/ 15 V
ns
td(off)
113
tf
172
Eon
0.91
mJ
Eoff
0.87
mJ
VGE = 0 V, IF = 30 A
VGE = 0 V, IF = 30 A, TJ = 150°C
VF
2.3
2.5
TJ = 25°C
IF = 30 A, VR = 400 V
diF/dt = 200 A/ms
trr
200
ns
Qrr
1000
nc
Irrm
9
A
Turn−off switching loss
DIODE CHARACTERISTIC
Forward voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
2.5
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
http://onsemi.com
2
NGTB30N60SWG
TYPICAL CHARACTERISTICS
120
VGE = 15 V
to 20 V
110
100
90
80
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
120
13 V
TJ = 25°C
70
60
50
11 V
40
30
10 V
9V
20
7V
10
0
0
1
2
3
8V
4
5
7
6
13 V
80
60
11 V
40
10 V
20
9V
8V
8
7V
0
1
2
3
4
5
7
6
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Output Characteristics
Figure 2. Output Characteristics
8
120
100
TJ = −55°C
13 V
IC, COLLECTOR CURRENT (A)
VGE = 15 V
to 20 V
80
11 V
60
40
10 V
20
9V
8V
0
0
1
2
3
4
5
100
TJ = 25°C
80
TJ = 150°C
60
40
20
0
6
7
0
8
2
4
8
6
12
10
14
16
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VGE, GATE−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics
Figure 4. Typical Transfer Characteristics
18
10,000
4.5
IC = 60 A
4.0
C, CAPACITANCE (pF)
IC, COLLECTOR CURRENT (A)
VGE = 15 V
to 20 V
100
0
120
VCE, COLLECTOR−EMITTER VOLTAGE (V)
TJ = 150°C
3.5
3.0
IC = 30 A
2.5
2.0
IC = 15 A
1.5
IC = 5 A
Cies
1000
TJ = 25°C
Coes
100
Cres
1.0
0.5
−75 −50 −25
0
25
50
10
75 100 125 150 175 200
0
10
20
30
40
50
60
70
80
90 100
TJ, JUNCTION TEMPERATURE (°C)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 5. VCE(sat) vs. TJ
Figure 6. Typical Capacitance
http://onsemi.com
3
NGTB30N60SWG
TYPICAL CHARACTERISTICS
20
VGE, GATE−EMITTER VOLTAGE (V)
IF, FORWARD CURRENT (A)
120
100
TJ = 25°C
80
TJ = 150°C
60
40
20
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
14
12
10
8
VCE = 400 V
VGE = 15 V
IC = 30 A
6
4
2
0
5.0
20
10
30
40
50
60
70
80
VF, FORWARD VOLTAGE (V)
QG, GATE CHARGE (nC)
Figure 7. Diode Forward Characteristics
Figure 8. Typical Gate Charge
1.5
90
100
1000
VCE = 400 V
VGE = 15 V
IC = 30 A
Rg = 10 W
SWITCHING TIME (ns)
SWITCHING LOSS (mJ)
16
0
0
1.0
Eon
Eoff
0.5
0
VCE = 400 V
VGE = 15 V
IC = 30 A
Rg = 10 W
tf
100
td(off)
td(on)
tr
10
0
20
40
60
80
100
120
140
0
160
20
40
60
80
100
120
140
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 9. Switching Loss vs. Temperature
Figure 10. Switching Time vs. Temperature
1000
3.0
VCE = 400 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
2.0
Eon
SWITCHING TIME (ns)
2.5
SWITCHING LOSS (mJ)
18
1.5
Eoff
1.0
VCE = 400 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
tf
td(off)
100
td(on)
0.5
tr
0
0
10
20
30
40
50
60
10
70
0
10
20
30
40
50
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 11. Switching Loss vs. IC
Figure 12. Switching Time vs. IC
http://onsemi.com
4
60
160
NGTB30N60SWG
TYPICAL CHARACTERISTICS
1000
td(off)
VCE = 400 V
VGE = 15 V
TJ = 150°C
IC = 30 A
2.5
2.0
EON
SWITCHING TIME (ns)
SWITCHING LOSS (mJ)
3.0
1.5
EOFF
1.0
tf
td(on)
100
tr
VCE = 400 V
VGE = 15 V
TJ = 150°C
IC = 30 A
0.5
0
10
5
15
25
35
45
55
65
5
75
25
35
45
55
65
Rg, GATE RESISTOR (W)
Figure 13. Switching Loss vs. Rg
Figure 14. Switching Time vs. Rg
1.8
75
85
525
575
1000
VGE = 15 V
TJ = 150°C
IC = 30 A
Rg = 10 W
1.4
1.2
VGE = 15 V
TJ = 150°C
IC = 30 A
Rg = 10 W
EOFF
1.0
SWITCHING TIME (ns)
1.6
SWITCHING LOSS (mJ)
15
Rg, GATE RESISTOR (W)
EON
0.8
0.6
0.4
tf
td(off)
100
td(on)
tr
0.2
0
10
175 225
275
325
375
425
475
525
575
175 225
325
375
425
475
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 15. Switching Loss vs. VCE
Figure 16. Switching Time vs. VCE
1000
1000
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
275
100
10
Single Nonrepetitive
Pulse TC = 25°C
Curves must be derated
linearly with increase
in temperature
1
0.1
1
10
50 ms
100 ms
1 ms
dc operation
100
100
10
VGE = 15 V, TC = 125°C
1
1000
1
10
100
1000
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 17. Safe Operating Area
Figure 18. Reverse Bias Safe Operating Area
http://onsemi.com
5
NGTB30N60SWG
TYPICAL CHARACTERISTICS
SQUARE−WAVE PEAK R(t) (°C/W)
1
50% Duty Cycle
RqJC = 0.66
20%
0.1 10%
5%
R1
Junction
2%
R2
Rn
Case
0.01
C1
0.001
Cn
C2
Single Pulse
Ri (°C/W)
Ci (J/°C)
0.045172
0.175067
0.060092
0.270047
0.002214
0.001806
0.016641
0.011710
0.108471
0.092191
0.002714 11.650732
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
0.0001
0.000001
0.00001
0.001
0.0001
0.01
0.1
1
ON−PULSE WIDTH (s)
Figure 19. IGBT Die Self−heating Square−wave Duty Cycle Transient Thermal Response
SQUARE−WAVE PEAK R(t) (°C/W)
10
RqJC = 2.73
50% Duty Cycle
1
20%
10%
5%
2%
Junction R1
R2
Rn
C1
C2
Cn
0.1
Single Pulse
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
0.01
0.000001
0.00001
0.0001
0.001
0.01
Case
Ri (°C/W)
Ci (J/°C)
0.069970
0.092027
0.101062
0.230940
0.414345
0.937517
0.780222
0.098174
0.000014
0.000109
0.000313
0.000433
0.000763
0.001067
0.004053
0.101860
0.1
ON−PULSE WIDTH (s)
Figure 20. Diode Die Self−heating Square−wave Duty Cycle Transient Thermal Response
http://onsemi.com
6
1
NGTB30N60SWG
PACKAGE DIMENSIONS
TO−247
CASE 340L−02
ISSUE F
−T−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
C
−B−
E
U
L
N
4
A
−Q−
1
2
0.63 (0.025)
3
M
T B
M
P
−Y−
K
W
J
F 2 PL
D 3 PL
0.25 (0.010)
M
Y Q
MILLIMETERS
MIN
MAX
20.32
21.08
15.75
16.26
4.70
5.30
1.00
1.40
1.90
2.60
1.65
2.13
5.45 BSC
1.50
2.49
0.40
0.80
19.81
20.83
5.40
6.20
4.32
5.49
--4.50
3.55
3.65
6.15 BSC
2.87
3.12
STYLE 4:
PIN 1.
2.
3.
4.
H
G
DIM
A
B
C
D
E
F
G
H
J
K
L
N
P
Q
U
W
INCHES
MIN
MAX
0.800
8.30
0.620
0.640
0.185
0.209
0.040
0.055
0.075
0.102
0.065
0.084
0.215 BSC
0.059
0.098
0.016
0.031
0.780
0.820
0.212
0.244
0.170
0.216
--0.177
0.140
0.144
0.242 BSC
0.113
0.123
GATE
COLLECTOR
EMITTER
COLLECTOR
S
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
http://onsemi.com
7
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
NGTB30N60SW/D