BF256A BF256A is a Preferred Device JFET - General Purpose N–Channel N–Channel Junction Field Effect Transistor designed for VHF and UHF applications. • • • • http://onsemi.com Low Cost TO–92 Type Package Forward Transfer Admittance, Yfs = 4.5 mmhos (Min) Transfer Capacitance – Crss = 0.7 (Typ) Power Gain at f = 800 MHz, Typ. = 11 dB 1 DRAIN 3 GATE MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS 30 Vdc Drain–Gate Voltage VDG 30 Vdc Gate–Source Voltage VGS 30 Vdc Forward Gate Current IG(f) 10 mAdc 360 2.88 mW mW/°C –65 to +150 °C Total Device Dissipation 2 SOURCE TO–92 CASE 29 STYLE 5 1 2 3 MARKING DIAGRAMS PD @ TA = 25°C Derate above 25°C Operating and Storage Channel Temperature Range Tchannel, Tstg BF 256A YWW PD, MAXIMUM CONTINUOUS POWER DISSIPATION (mW) 500 Y WW = Year = Work Week 400 ORDERING INFORMATION 300 Device BF256A Package Shipping TO–92 5000 Units/Box 200 Preferred devices are recommended choices for future use and best overall value. 100 0 0 25 50 75 100 125 150 175 200 FREE AIR TEMPERATURE (°C) Figure 1. Power Derating Curve Semiconductor Components Industries, LLC, 2001 September, 2001 – Rev. 3 1 Publication Order Number: BF256A/D BF256A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS (–IG = –1.0 µAdc, VDS = 0) Gate–Source Breakdown Voltage –V(BR)GSS 30 – — Vdc Gate–Source Voltage (VDS = 15 Vdc, ID = 200 µA) –VGS 0.5 — 7.5 Vdc Gate Reverse Current (–VGS = 20 Vdc, VDS = 0) –IGSS — — 5.0 nAdc (VDS = 15 Vdc, VGS = 0) IDSS 3.0 – 7.0 mAdc ON CHARACTERISTICS Zero–Gate–Voltage Drain Current (Note 1.) SMALL–SIGNAL CHARACTERISTICS Forward Transfer Admittance Reverse Transfer Capacitance Output Capacitance (VDS = 15 Vdc, VGS = 0, f = 1 kHz) |Yfs| 4.5 5.0 – mmhos (VDS = 20 Vdc, –VGS = 1 Vdc, f = 1 MHz) Crss – 0.7 – pF (VDS = 20 Vdc, VGS = 0, f = 1 MHz) Coss – 1.0 – pF fgfs – 1000 – MHz Cut–Off Frequency (Note 2.) (VDS = 15 Vdc, VGS = 0) 1. Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2.0%. 10 5 9 4.5 ID, DRAIN CURRENT (mA) GATE–SOURCE CUTOFF VOLTAGE (–VGS(off) @ ID = 10 nA) 2. The frequency at which gfs is 0.7 of its value at 1 KHz. VDS = 15 Vdc 8 7 6 5 4 3 2 1 0 –VGS = 0 V 4 3.5 3 0.2 V 2.5 2 0.4 V 1.5 0.6 V 1 0.8 V 0.5 BF256A 0 0 5 10 15 20 25 0 2 4 6 8 10 12 14 16 18 IDSS, DRAIN CURRENT (mA) @ VGS = 0 VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 2. Correlation Between –VGS(off) and IDSS Figure 3. Drain Current versus Drain–to–Source Voltage http://onsemi.com 2 20 VDS = 15 Vdc VGS = 0 Yis = gis + jbis bis 1 10 1 0.1 –gis 0.1 1000 0.01 100 100 VDS = 15 Vdc VGS = 0 Yfs = gfs – jbfs 10 10 gfs –bfs 1 1 10 0.1 1000 100 f, FREQUENCY (MHz) Figure 4. Input Admittance versus Frequency Figure 5. Forward Transfer Admittance versus Frequency 10 VDS = 15 Vdc VGS = 0 Yrs = –grs – jbrs 0.1 1 –brs –grs 0.01 0.1 100 10 VDS = 15 Vdc VGS = 0 Yos = gos + jbos gos 0.1 1 bos 0.1 0.01 0.01 10 1 0.01 1000 0.001 1000 10 100 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 6. Reverse Transfer Admittance versus Frequency Figure 7. Output Admittance versus Frequency 5 bos, OUTPUT SUSCEPTANCE (mmhos) 1 gos, OUTPUT CONDUCTANCE (mmhos) f, FREQUENCY (MHz) 0.001 1.0 Crss, REVERSE TRANSFER CAPACITANCE (pF) Ciss, INPUT CAPACITANCE (pF) 100 0.1 –brs, REVERSE SUSCEPTANCE (mmhos) –grs, REVERSE TRANSCONDUCTANCE (mmhos) 10 gfs, FORWARD TRANSCONDUCTANCE (mmhos) 100 –bfs, FORWARD SUSCEPTANCE (mmhos) 10 bis, INPUT SUSCEPTANCE (mmhos) gis, INPUT CONDUCTANCE (mmhos) BF256A VDS = 20 Vdc f = 1 MHz 4 3 2 1 0 0.5 VDS = 20 Vdc f = 1 MHz 0 0 1 2 3 4 5 6 7 8 9 0 10 2 4 6 8 –VGS, GATE–SOURCE VOLTAGE (VOLTS) –VGS, GATE–SOURCE VOLTAGE (VOLTS) Figure 8. Input Capacitance versus Gate–Source Voltage Figure 9. Reverse Transfer Capacitance versus Gate–Source Voltage http://onsemi.com 3 10 BF256A PACKAGE DIMENSIONS TO–92 (TO–226) CASE 29–11 ISSUE AL A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L SEATING PLANE K DIM A B C D G H J K L N P R V D X X G J H V C SECTION X–X 1 N INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- N ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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