JFET Transistor N-Channel

MMBF5484LT1
Preferred Device
JFET Transistor
N−Channel
Features
• Pb−Free Package is Available
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MAXIMUM RATINGS
Rating
2 SOURCE
Symbol
Value
Unit
VDG
25
Vdc
VGS(r)
25
Vdc
Forward Gate Current
IG(f)
10
mAdc
Continuous Device Dissipation at or Below
TC = 25°C
Linear Derating Factor
PD
200
2.8
mW
mW/°C
Storage Channel Temperature Range
Tstg
−65 to +150
°C
Drain−Gate Voltage
Reverse Gate−Source Voltage
3
GATE
1 DRAIN
3
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR−5 Board,
(Note 1) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
Symbol
Max
Unit
225
1.8
mW
mW/°C
RqJA
556
°C/W
TJ, Tstg
−55 to +150
°C
SOT−23 (TO−236)
CASE 318
STYLE 10
1
2
PD
MARKING DIAGRAM
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
M6B M G
G
1
M6B = Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping †
MMBF5484LT1
SOT−23
3,000 / Tape & Reel
MMBF5484LT1G
SOT−23 3,000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 3
1
Publication Order Number:
MMBF5484LT1/D
MMBF5484LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
V(BR)GSS
−25
−
Vdc
IGSS
−
−
−1.0
−0.2
nAdc
mAdc
VGS(off)
−0.3
−3.0
Vdc
IDSS
1.0
5.0
mAdc
Forward Transfer Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
|Yfs|
3000
6000
mmhos
Output Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
|yos|
−
50
mmhos
Input Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Ciss
−
5.0
pF
Reverse Transfer Capacitance (VDS = 15 Vdc, VGS = 0, f = 10 MHz)
Crss
−
1.0
pF
Output Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Coss
−
2.0
pF
OFF CHARACTERISTICS
Gate−Source Breakdown Voltage (IG = −1.0 mAdc, VDS = 0)
Gate Reverse Current
(VGS = − 20 Vdc, VDS = 0)
(VGS = − 20 Vdc, VDS = 0, TA = 100°C)
Gate Source Cutoff Voltage (VDS = 15 Vdc, ID = 10 nAdc)
ON CHARACTERISTICS
Zero−Gate−Voltage Drain Current (VDS = 15 Vdc, VGS = 0)
SMALL− SIGNAL CHARACTERISTICS
COMMON SOURCE CHARACTERISTICS ADMITTANCE PARAMETERS
(VDS = 15 Vdc, Tchannel = 25°C)
grs , REVERSE TRANSADMITTANCE (mmhos)
brs , REVERSE SUSCEPTANCE (mmhos)
gis, INPUT CONDUCTANCE (mmhos)
bis, INPUT SUSCEPTANCE (mmhos)
30
20
bis @ IDSS
10
7.0
5.0
3.0
gis @ IDSS
2.0
gis @ 0.25 IDSS
1.0
0.7
0.5
bis @ 0.25 IDSS
0.3
10
20
30
50 70 100
200 300
f, FREQUENCY (MHz)
500 700 1000
5.0
3.0
2.0
brs @ IDSS
1.0
0.7
0.5
0.25 IDSS
0.3
0.2
0.1
0.07
0.05
grs @ IDSS, 0.25 IDSS
10
30
50 70 100
200 300
f, FREQUENCY (MHz)
500 700 1000
Figure 2. Reverse Transfer Admittance (yrs)
20
10
10
7.0
5.0
gos, OUTPUT ADMITTANCE (mhos)
bos, OUTPUT SUSCEPTANCE (mhos)
gfs, FORWARD TRANSCONDUCTANCE (mmhos)
|b fs|, FORWARD SUSCEPTANCE (mmhos)
Figure 1. Input Admittance (yis)
20
gfs @ IDSS
gfs @ 0.25 IDSS
3.0
2.0
1.0
0.7
0.5
|bfs| @ IDSS
|bfs| @ 0.25 IDSS
5.0
bos @ IDSS and 0.25 IDSS
2.0
1.0
0.5
0.2
gos @ IDSS
0.1
0.05
gos @ 0.25 IDSS
0.02
0.3
0.2
0.01
10
20
30
50 70 100
200 300
f, FREQUENCY (MHz)
500 700 1000
10
Figure 3. Forward Transadmittance (yfs)
20
30
50 70 100
200 300
f, FREQUENCY (MHz)
500 700 1000
Figure 4. Output Admittance (yos)
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2
MMBF5484LT1
COMMON SOURCE CHARACTERISTICS
S−PARAMETERS
(VDS = 15 Vdc, Tchannel = 25°C, Data Points in MHz)
30°
20°
10°
0°
1.0
40°
350°
340°
330°
320°
40°
310°
50°
20°
10°
320°
310°
ID = IDSS, 0.25 IDSS
900
500
ID = IDSS
800
60°
300°
400
500
0.7
600
300°
0.1
500
70°
290°
0.2
700
600
600
80°
330°
0.4
300
70°
340°
0.3
400
50°
0.8
350°
300
200
60°
0°
200
100
0.9
30°
ID = 0.25 IDSS
100
290°
400
700
280°
80°
270°
90°
100°
260°
100°
260°
110°
250°
110°
250°
120°
240°
120°
240°
130°
230°
130°
230°
140°
220°
140°
220°
0.6
800
90°
900
900
150°
160°
170°
180°
800
700
190°
200°
210°
300
200
20°
10°
0°
350°
150°
160°
170°
340°
330°
30°
20°
10°
80°
90°
700
110°
0.4
800
600
100°
210°
0°
350°
340°
330°
100 200
I
=
0.25
IDSS
D
300
1.0
400
100 200
500
300
600
400
700
0.9
500
800
600
ID = IDSS
700
900
800
900
0.8
310°
50°
300°
60°
290°
70°
280°
80°
270°
90°
270°
260°
100°
260°
250°
110°
250°
240°
120°
240°
230°
130°
230°
220°
140°
220°
320°
310°
300°
0.7
290°
900
700
600
200°
40°
0.5
60°
900
190°
320°
0.6
50°
800
180°
Figure 6. S12s
40°
70°
270°
100
Figure 5. S11s
30°
280°
0.0
500
0.3
ID = 0.25 IDSS
500
0.3
100
400
400
280°
0.6
300
200
0.4
100
0.5
300
120°
ID = IDSS
200
130°
0.6
140°
150°
160°
170°
180°
190°
200°
210°
150°
Figure 7. S21s
160°
170°
180°
190°
Figure 8. S22s
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3
200°
210°
MMBF5484LT1
COMMON GATE CHARACTERISTICS ADMITTANCE PARAMETERS
grg , REVERSE TRANSADMITTANCE (mmhos)
brg , REVERSE SUSCEPTANCE (mmhos)
(VDG = 15 Vdc, Tchannel = 25°C)
gig, INPUT CONDUCTANCE (mmhos)
big, INPUT SUSCEPTANCE (mmhos)
20
10
7.0
5.0
gig @ IDSS
3.0
grg @ 0.25 IDSS
2.0
1.0
0.7
0.5
big @ IDSS
big @ 0.25 IDSS
0.3
0.2
10
20
30
50 70 100
200 300
f, FREQUENCY (MHz)
0.5
0.3
0.1
0.07
0.05
0.25 IDSS
0.03
0.02
0.01
0.007
0.005
500 700 1000
brg @ IDSS
0.2
gig @ IDSS, 0.25 IDSS
10
10
7.0
5.0
gfg @ IDSS
3.0
gfg @ 0.25 IDSS
2.0
1.0
0.7
0.5
bfg @ IDSS
0.3
brg @ 0.25 IDSS
0.2
30
50 70 100
200 300
f, FREQUENCY (MHz)
500 700 1000
Figure 10. Reverse Transfer Admittance (yrg)
gog, OUTPUT ADMITTANCE (mmhos)
bog, OUTPUT SUSCEPTANCE (mmhos)
gfg , FORWARD TRANSCONDUCTANCE (mmhos)
bfg , FORWARD SUSCEPTANCE (mmhos)
Figure 9. Input Admittance (yig)
20
1.0
0.7
0.5
bog @ IDSS, 0.25 IDSS
0.3
0.2
0.1
0.07
0.05
gog @ IDSS
0.03
0.02
gog @ 0.25 IDSS
0.1
0.01
10
20
30
50 70 100
200 300
f, FREQUENCY (MHz)
500 700 1000
10
Figure 11. Forward Transfer Admittance (yfg)
20
30
50 70 100
200 300
f, FREQUENCY (MHz)
500 700 1000
Figure 12. Output Admittance (yog)
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4
MMBF5484LT1
COMMON GATE CHARACTERISTICS
S−PARAMETERS
(VDS = 15 Vdc, Tchannel = 25°C, Data Points in MHz)
30°
20°
10°
0°
350°
340°
330°
30°
0.7
40°
100
310°
50°
300°
60°
290°
70°
280°
80°
0°
350°
340°
330°
0.04
200
300
320°
0.03
400
100
500
200
0.5
ID = IDSS
0.4
310°
600
300
60°
70°
40°
10°
ID = 0.25 IDSS
0.6
50°
320°
20°
0.02
700
400
500
300°
800
600
900
0.01
290°
700
80°
800
0.3
900
90°
90°
270°
100°
ID = IDSS
110°
110°
250°
270°
500
600
100°
260°
280°
0.0
100
700
600
700
260°
ID = 0.25 IDSS
250°
0.01
800
120°
120°
240°
240°
800
0.02
900
130°
130°
230°
230°
900
140°
140°
220°
150°
160°
170°
180°
190°
200°
210°
20°
10°
0°
350°
150°
160°
170°
340°
330°
30°
20°
10°
40°
320°
190°
0°
1.5
1.0
350°
300
200°
210°
340°
330°
500
200
100
700
600
800
0.9
ID = IDSS
320°
400
100
0.4
50°
180°
Figure 14. S12g
0.5
40°
220°
0.04
Figure 13. S11g
30°
0.03
900
310°
50°
300°
60°
290°
70°
280°
80°
270°
90°
270°
100°
260°
100°
260°
110°
250°
110°
250°
120°
240°
120°
240°
130°
230°
130°
230°
140°
220°
140°
220°
100
ID = IDSS, 0.25 IDSS
0.3
0.8
60°
0.2
70°
310°
ID = 0.25 IDSS
80°
0.1
900
90°
300°
0.7
290°
280°
0.6
900
150°
160°
170°
180°
190°
200°
210°
150°
Figure 15. S21g
160°
170°
180°
190°
Figure 16. S22g
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5
200°
210°
MMBF5484LT1
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
D
SEE VIEW C
3
HE
E
c
1
2
b
DIM
A
A1
b
c
D
E
e
L
L1
HE
0.25
e
q
A
L
A1
L1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
STYLE 10:
PIN 1. DRAIN
2. SOURCE
3. GATE
VIEW C
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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MMBF5484LT1/D