TF262TH N-Channel JFET –20V, 140 to 350µA, 0.95mS www.onsemi.com Features • • • • • Low Output Noise Voltage : VNO= --112dB typ. (VCC=2V, RL=2.2kΩ, Cin=5pF) Ultrasmall Package Facilitates Miniaturization in End Products : 1.4mm × 1.2mm × 0.34mm Especially Suited for use in electret condenser microphone for audio equipments and telephones Adoption of FBET process Halogen Free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Gate to Drain Voltage VGDO Gate Current IG Drain Current ID Allowable Power Dissipation PD Junction Temperature Tj Storage Temperature Tstg Conditions Ratings Unit --20 V 10 mA 1 mA 100 mW 150 °C --55 to +150 °C This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Packing Type : TL Electrical Connection 3 TL Marking 1 3 LOT No. LOT No. L 1 2 TF262TH-4-TL-H TF262TH-5-TL-H R A N K 1 : Drain 2 : Source 3 : Gate 2 SOT-623 / VTFP ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. ©Semiconductor Components Industries, LLC, 2015 March 2015 - Rev. 1 1 Publication Order Number: TF262TH/D TF262TH Electrical Characteristics at Ta=25°C Parameter Symbol Gate to Drain Breakdown Voltage V(BR)GDO VGS(off) Cutoff Voltage Drain Current IDSS | yfs | Forward Transfer Admittance Input Capacitance Ciss Reverse Transfer Capacitance Crss Ratings Conditions min IG=--100µA VDS=2V, ID=1µA VDS=2V, VGS=0V typ Unit max --20 V --0.2 --0.5 --1.0 140* VDS=2V, VGS=0V, f=1kHz V µA 350* 0.5 0.95 VDS=2V, VGS=0V, f=1MHz VDS=2V, VGS=0V, f=1MHz mS 3.5 pF 0.65 pF [Ta=25°C, VCC=2.0V, RL=2.2kΩ, Cin=5pF, See specified Test Circuit.] Voltage Gain GV VIN=10mV, f=1kHz --1.5 Reduced Voltage Characteristic DGVV VIN=10mV, f=1kHz, VCC=2.0V → 1.5V --0.8 Frequency Characteristic DGvf f=1kHz to 110Hz Total Harmonic Distortion THD VIN=30mV, f=1kHz Output Noise Voltage VNO VIN=0V, A Curve dB --2.0 dB --1.0 dB 0.5 % --112 dB * : The TF262TH is classified by IDSS as follows : (unit : µA) Marking Rank IDSS L4 4 140 to 240 L5 5 210 to 350 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Test Circuit Voltage gain Frequency Characteristic Distortion Reduced Voltage Characteristic 2.2kΩ VCC=2.0V VCC=1.5V 33µF + 5pF VTVM V THD ID -- VDS VGS=0V --0.2V 50 --0.3V 150 1 2 3 0µ 100 15 A 50 --0.4V 0 µA 200 50 150 250 0µ A --0.1V 300 =3 DrainCurrent,ID -- µA DrainCurrent,ID -- µA 200 100 VDS=2V 350 250 0 ID -- VGS 400 25 300 ID SS OSC 4 5 Drain to Source Voltage, VDS -- V IT16225 0 --0.8 --0.7 --0.6 --0.5 --0.4 --0.3 --0.2 Gate to Source Voltage, VGS -- V www.onsemi.com 2 --0.1 0 IT16226 TF262TH ID -- VGS 400 Forward Transfer Admittance, | yfs | -- mS DrainCurrent,ID -- µA 350 300 250 200 °C 75 C = Ta 25° 150 100 C 5° --2 50 0 --0.7 --0.6 --0.5 --0.4 --0.3 --0.2 --0.1 Gate to Source Voltage, VGS -- V 0.7 250 300 350 Crss -- VDS 10 400 IT16228 5 3 2 2 3 5 7 2 1.0 3 5 Drain to Source Voltage, VDS -- V --0.5 --1.0 Voltage Gain, GV -- dB 3 2 1.0 7 5 3 --1.5 7 10 IT16230 GV -- IDSS GV : VCC=2V VIN=10mV f=1kHz RL=2.2kΩ Cin=5pF IDSS : VDS=2V --2.0 --2.5 --3.0 2 0.1 0.1 2 3 5 7 1.0 2 3 5 Drain to Source Voltage, VDS -- V GV -- VCC 2 --3.5 100 7 10 IT16231 Voltage Gain, GV -- dB 150µA --4 --6 GV : VIN=10mV f=1kHz RL=2.2kΩ Cin=5pF --8 0 1 2 3 4 Supply Voltage, VCC -- V 250 5 300 350 A 350µ I DSS= 0 150µA --2 250µA --4 --6 --8 GV : VCC=2V VIN=10mV f=1kHz RL=2.2kΩ --10 --12 --14 6 0 2 4 6 8 10 12 Electret Capacitance, Cin -- pF IT16233 www.onsemi.com 3 400 IT16232 GV -- Cin 2 250µA --2 200 4 I DSS=35 0 150 DrainCurrent,IDSS -- µA 0µA Voltage Gain, GV -- dB 350 VGS=0V f=1MHz IT16229 5 --10 300 Ciss -- VDS 1.0 0.1 400 VGS=0V f=1MHz 7 250 7 0.3 200 200 10 0.4 150 150 DrainCurrent,IDSS -- µA InputCapacitance,Ciss -- pF Cutoff Voltage, VGS(off) -- V 0.8 0.6 100 0.5 DrainCurrent,IDSS -- µA Reverse Transfer Capacitance, Crss -- pF 0.9 0 0.6 0.2 100 1.0 VDS=2V ID=1µA 0.7 VDS=2V VGS=0V f=1kHz 1.1 IT16227 VGS(off) -- IDSS 0.8 | yfs | -- IDSS 1.2 VDS=2V 14 16 IT16234 DGVV -- IDSS --0.5 --1.0 --1.5 --2.0 DGVV : VCC=2V→1.5V VIN=10mV f=1kHz RL=2.2kΩ Cin=5pF IDSS : VDS=2V --2.5 100 150 200 250 300 350 DrainCurrent,IDSS -- µA Total Harmonic Distortion, THD -- % 0.6 0.2 150 200 250 300 DrainCurrent,IDSS -- µA 3 350 µA =150 I DSS µA 250 2 A 1.0 350µ 7 5 3 2 0 50 100 150 200 PD -- Ta 120 0.4 0 100 5 Input Voltage, VIN -- mV THD : VCC=2V VIN=30mV f=1kHz RL=2.2kΩ Cin=5pF IDSS : VDS=2V 0.8 7 0.1 400 THD : VCC=2V f=1kHz RL=2.2kΩ Cin=5pF IT16235 THD -- IDSS 1.0 THD -- VIN 10 Total Harmonic Distortion, THD -- % 0 AllowablePowerDissipation,PD -- mW Reduced Voltage Characteristic, DGVV -- dB TF262TH 100 80 60 40 20 0 400 0 20 40 60 80 100 120 AmbientTemperature, Ta -- °C IT16237 www.onsemi.com 4 IT16236 140 160 IT16238 TF262TH Package Dimensions unit : mm TF262TH-4-TL-H, TF262TH-5-TL-H SOT-623 / VTFP CASE 631AD ISSUE O Recommended Soldering Footprint 1.1 0.4 0.5 0.45 0.45 0.45 0.45 www.onsemi.com 5 TF262TH ORDERING INFORMATION Device TF262TH-4-TL-H TF262TH-5-TL-H Package Shipping memo SOT-623 / VTFP 8,000pcs. / Tape and Reel Pb-Free and Halogen Free ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. 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