14 A, 45 V N-Channel MOSFET

SFT1407
Ordering number : ENA0764
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
SFT1407
General-Purpose Switching Device
Applications
Features
•
•
•
Motor drive application.
Low ON-resistance.
4V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
45
Gate-to-Source Voltage
VGSS
±20
V
ID
14
A
Drain Current (DC)
Drain Current (PW≤10µs)
IDP
PW≤10µs, duty cycle≤1%
V
56
A
1.0
W
Allowable Power Dissipation
PD
20
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Tc=25°C
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Marking : T1407
Symbol
V(BR)DSS
IDSS
IGSS
Conditions
ID=1mA, VGS=0V
VDS=45V, VGS=0V
VGS(off)
yfs
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=7A
RDS(on)1
RDS(on)2
ID=7A, VGS=10V
ID=7A, VGS=4V
Ratings
min
typ
Unit
max
45
V
1.2
5.8
1
µA
±10
µA
2.6
9.7
V
S
21
28
mΩ
29
41
mΩ
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
40407PA TI IM TC-00000275 No. A0764-1/4
SFT1407
Continued from preceding page.
Parameter
Symbol
Input Capacitance
Ciss
Output Capacitance
Coss
Ratings
Conditions
min
typ
VDS=20V, f=1MHz
VDS=20V, f=1MHz
Unit
max
2225
pF
260
pF
VDS=20V, f=1MHz
See specified Test Circuit.
190
pF
27
ns
ns
Reverse Transfer Capacitance
Crss
Turn-ON Delay Time
td(on)
Rise Time
tr
td(off)
See specified Test Circuit.
50
See specified Test Circuit.
150
ns
tf
See specified Test Circuit.
80
ns
40
nC
6
nC
Fall Time
Total Gate Charge
Qg
Gate-to-Source Charge
Qgs
VDS=24V, VGS=10V, ID=14A
VDS=24V, VGS=10V, ID=14A
Gate-to-Drain “Miller” Charge
Qgd
VDS=24V, VGS=10V, ID=14A
Diode Forward Voltage
VSD
IS=14A, VGS=0V
8
0.92
Package Dimensions
Package Dimensions
unit : mm (typ)
7518-004
unit : mm(typ)
7003-004
5.5
7.0
5.5
4
0.85
0.7
0.5
1.5
1.5
4
2.3
6.5
5.0
0.5
0.5
0.6
1
2
2.3
1 : Gate
2 : Drain
3 : Source
4 : Drain
2.3
2
3
0 to 0.2
0.6
0.5
3
2.5
0.8
1
7.5
0.8
1.6
0.85
1.2
SANYO : TP
V
7.0
2.3
6.5
5.0
nC
1.2
1.2
Turn-OFF Delay Time
1.2
2.3
2.3
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP-FA
Switching Time Test Circuit
VDD=24V
VIN
10V
0V
ID=7A
RL=3.3Ω
VOUT
VIN
D
PW=10µs
D.C.≤1%
G
P.G
50Ω
S
SFT1407
No. A0764-2/4
SFT1407
ID -- VDS
8.0
V
6.0V
4.0
V
14
VDS=10V
V
3.5
12
VGS=3.0V
4
2
0
0
0.2
0.4
0.6
0.8
1.0
Drain-to-Source Voltage, VDS -- V
50
40
30
20
10
4
6
8
10
12
14
Gate-to-Source Voltage, VGS -- V
16
2.0
2.5
3.0
3.5
40
7A
I =
4V, D
=
7A
VGS
, I D=
10V
=
VGS
30
20
10
--40
--20
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
160
IT12256
VGS=0V
3
2
140
IS -- VSD
5
VDS=10V
4.0
IT12254
50
IT12255
yfs -- ID
3
1.5
RDS(on) -- Ta
0
--60
0
2
1.0
60
Ta=25°C
ID=7A
0
0.5
Gate-to-Source Voltage, VGS -- V
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
2
5
=
Ta
5
--2
°C
°C
75
3
2
3
2
1.0
7
5
3
1.0
2
7
5
0.1
10
7
5
--25°
C
7
Source Current, IS -- A
2
10
°C
25°C
5°C
Ta=7
5
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
0
IT12253
RDS(on) -- VGS
60
Forward Transfer Admittance, yfs -- S
4
2
0
2
3
5
7 1.0
2
3
5
7
10
Drain Current, ID -- A
2
0.1
0.2
3
0.6
0.8
1.0
Diode Forward Voltage, VSD -- V
1.2
IT12258
Ciss, Coss, Crss -- VDS
5
f=1MHz
VDD=24V
VGS=10V
td(off)
2
0.4
IT12257
SW Time -- ID
3
3
Ciss
Ciss, Coss, Crss -- pF
Switching Time, SW Time -- ns
6
--25°
C
6
8
25°
C
8
10
Ta
=7
5°C
Drain Current, ID -- A
10.
3.3V
V
10
1 6 .0
Drain Current, ID -- A
0V
12
ID -- VGS
14
100
tf
7
5
tr
td(on)
3
2
2
1000
7
5
3
Coss
2
Crss
10
7
0.1
100
2
3
5
7
1.0
2
3
5
Drain Current, ID -- A
7
10
2
3
IT12259
0
5
10
15
20
25
30
35
Drain-to-Source Voltage, VDS -- V
40
45
IT12260
No. A0764-3/4
SFT1407
VGS -- Qg
10
VDS=24V
ID=14A
7
6
5
4
3
2
0
5
10
15
20
25
30
Total Gate Charge, Qg -- nC
40
3
2
1.0
7
5
he
at
sin
k
0.4
0.2
0
s
10
10
ms
0m
op
0µ
s
era
tio
n
Tc=25°C
Single pulse
2
3
5 7 1.0
2
3
5 7 10
2
3
5 7 100
IT12262
Drain-to-Source Voltage, VDS -- V
Allowable Power Dissipation, PD -- W
0.8
0.6
Operation in this
area is limited by RDS(on).
PD -- Tc
25
1.0
No
DC
IT12261
PD -- Ta
1.2
Allowable Power Dissipation, PD -- W
35
1m
s
ID=14A
0.1
0.1
0
10
10
7
5
3
2
1
<10µs
IDP=56A
3
2
8
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
9
ASO
100
7
5
20
15
10
5
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT12263
0
20
40
60
80
100
120
140
Case Temperature, Tc -- °C
160
IT12264
Note on usage : Since the SFT1407 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
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Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
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This catalog provides information as of April, 2007. Specifications and information herein are subject
to change without notice.
PS No. A0764-4/4
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