30 V, 35 A, Single N Channel, u8FL Power MOSFET

NTTFS4C13N
Power MOSFET
30 V, 38 A, Single N−Channel, m8FL
Features
•
•
•
•
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• CPU Power Delivery
• DC−DC Converters
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V(BR)DSS
RDS(ON) MAX
ID MAX
9.4 mW @ 10 V
30 V
38 A
14 mW @ 4.5 V
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Symbol
Value
Unit
VDSS
30
V
VGS
±20
V
ID
11.7
A
Continuous Drain
Current RqJA
(Note 1)
TA = 25°C
Power Dissipation
RqJA (Note 1)
TA = 25°C
PD
2.06
W
Continuous Drain
Current RqJA ≤ 10 s
(Note 1)
TA = 25°C
ID
15.8
A
Power Dissipation
RqJA ≤ 10 s (Note 1)
TA = 25°C
Continuous Drain
Current RqJA
(Note 2)
TA = 80°C
PD
N−CHANNEL MOSFET
MARKING DIAGRAM
3.73
W
1
S
S
S
G
1
TA = 25°C
ID
TA = 80°C
7.2
A
5.2
TA = 25°C
PD
0.78
W
Continuous Drain
Current RqJC
(Note 1)
TC = 25°C
ID
38
A
Power Dissipation
RqJC (Note 1)
TC = 25°C
PD
21.5
W
TA = 25°C, tp = 10 ms
IDM
68
A
IDmax
70
A
TJ,
TSTG
−55 to
+150
°C
TC =80°C
Current Limited by Package
S (1,2,3)
11.4
Power Dissipation
RqJA (Note 2)
Pulsed Drain
Current
G (4)
8.5
TA = 80°C
Steady
State
D (5−8)
TA = 25°C
Operating Junction and Storage
Temperature
Source Current (Body Diode)
27
WDFN8
(m8FL)
CASE 511AB
4C13
A
Y
WW
G
4C13
AYWWG
G
D
D
D
D
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
NTTFS4C13NTAG
WDFN8
(Pb−Free)
1500 /
Tape & Reel
WDFN8
(Pb−Free)
5000 /
Tape & Reel
IS
19
A
Drain to Source DV/DT
dV/dt
7.0
V/ns
Single Pulse Drain−to−Source Avalanche
Energy (TJ = 25°C, VGS = 10 V, IL = 4 Apk,
L = 0.1 mH, RGS = 25 W) (Note 3)
EAS
22
mJ
NTTFS4C13NTWG
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
3. This is absolute maximum rating. Parts are tested at TJ = 25°C Vqs = 10 V,
IL = 15 Apk, EAS = 11 mJ.
© Semiconductor Components Industries, LLC, 2014
June, 2014 − Rev. 1
1
Publication Order Number:
NTTFS4C13N/D
NTTFS4C13N
THERMAL RESISTANCE MAXIMUM RATINGS
Symbol
Value
Junction−to−Case (Drain)
Parameter
RqJC
5.8
Junction−to−Ambient – Steady State (Note 4)
RqJA
60.8
Junction−to−Ambient – Steady State (Note 5)
RqJA
160
Junction−to−Ambient – (t ≤ 10 s) (Note 4)
RqJA
33.5
Unit
°C/W
4. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
5. Surface−mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
30
Drain−to−Source Breakdown Voltage
(transient)
V(BR)DSSt
VGS = 0 V, ID(aval) = TBD A,
Tcase = 25°C, ttransient = 100 ns
34
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
IDSS
V
V
14.9
VGS = 0 V,
VDS = 24 V
mV/°C
TJ = 25°C
1.0
TJ = 125°C
10
IGSS
VDS = 0 V, VGS = ±20 V
VGS(TH)
VGS = VDS, ID = 250 mA
mA
±100
nA
2.1
V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
VGS(TH)/TJ
RDS(on)
1.3
4.8
mV/°C
VGS = 10 V
ID = 30 A
7.5
9.4
VGS = 4.5 V
ID = 12 A
11.2
14
mW
Forward Transconductance
gFS
VDS = 1.5 V, ID = 15 A
40
S
Gate Resistance
RG
TA = 25°C
1.0
W
CHARGES AND CAPACITANCES
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
770
VGS = 0 V, f = 1 MHz, VDS = 15 V
443
pF
127
Capacitance Ratio
CRSS/CISS
Total Gate Charge
QG(TOT)
7.8
Threshold Gate Charge
QG(TH)
1.4
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
3.7
Gate Plateau Voltage
VGP
3.6
V
15.2
nC
Total Gate Charge
VGS = 0 V, VDS = 15 V, f = 1 MHz
VGS = 4.5 V, VDS = 15 V; ID = 30 A
QG(TOT)
VGS = 10 V, VDS = 15 V; ID = 30 A
0.165
2.9
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
6. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
7. Switching characteristics are independent of operating junction temperatures.
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2
NTTFS4C13N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS (Note 7)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
9
tr
td(OFF)
VGS = 4.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
35
tf
5
td(ON)
6.0
tr
td(OFF)
VGS = 10 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
tf
ns
13
26
ns
16
3.0
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
TJ = 25°C
0.82
TJ = 125°C
0.69
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = 30 A
1.1
V
23.4
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 30 A
QRR
12.1
ns
11.3
9.7
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
6. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
7. Switching characteristics are independent of operating junction temperatures.
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3
NTTFS4C13N
TYPICAL CHARACTERISTICS
10 V
70
6.5 V
ID, DRAIN CURRENT (A)
VDS = 5 V
4.5 V
60
4V
50
3.8 V
40
3.6 V
30
3.4 V
20
3.2 V
3.0 V
10
0
0
1
2
3
40
30
20
10
TJ = 25°C
4
5
0
0
1
1.5
2
2.5
3
3.5
4
4.5
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
ID = 30 A
0.013
0.012
0.011
0.010
0.009
0.008
0.007
0.006
4.0
5.0
6.0
7.0
8.0
9.0
VGS, GATE−TO−SOURCE VOLTAGE (V)
10
5
0.022
TJ = 25°C
0.020
0.018
0.016
VGS = 4.5 V
0.014
0.012
0.010
0.008
0.006
VGS = 10 V
10
20
30
40
50
60
70
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. VGS
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
10000
1.7
ID = 30 A
VGS = 10 V
VGS = 0 V
TJ = 150°C
1.5
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
0.5
TJ = −55°C
VGS, GATE−TO−SOURCE VOLTAGE (V)
0.014
1.6
TJ = 125°C
TJ = 25°C
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
0.015
3.0
50
2.8 V
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
60
4.2 V
ID, DRAIN CURRENT (A)
70
1.4
1.3
1.2
1.1
1
1000
TJ = 125°C
100
TJ = 85°C
0.9
0.8
0.7
−50
10
−25
0
25
50
75
100
125
150
5
10
15
20
25
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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4
30
NTTFS4C13N
TYPICAL CHARACTERISTICS
VGS = 0 V
TJ = 25°C
C, CAPACITANCE (pF)
900
Ciss
800
VGS, GATE−TO−SOURCE VOLTAGE (V)
1000
700
600
Coss
500
400
300
200
Crss
100
0
0
5
10
15
20
25
30
8
7
6
5
Qgd
4
3
TJ = 25°C
VDD = 15 V
VGS = 10 V
ID = 30 A
Qgs
2
1
0
0
2
4
6
8
10
12
14
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
16
30
VGS = 0 V
IS, SOURCE CURRENT (A)
100
t, TIME (ns)
QT
9
Qg, TOTAL GATE CHARGE (nC)
VDD = 15 V
ID = 15 A
VGS = 10 V
tr
td(off)
10
td(on)
tf
1
25
20
TJ = 25°C
15
TJ = 125°C
10
5
0
1
10
0.4
100
0.5
0.6
0.7
0.8
0.9
1.0
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
12
EAS, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
ID, DRAIN CURRENT (A)
10
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1000
10 ms
10
100 ms
1 ms
10 ms
1
0.1
11
0 V < VGS < 10 V
Single Pulse
TC = 25°C
RDS(on) Limit
Thermal Limit
Package Limit
0.01
0.01
0.1
dc
1
10
100
ID = 15 A
10
8
6
4
2
0
25
50
75
100
125
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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5
150
NTTFS4C13N
TYPICAL CHARACTERISTICS
100
Duty Cycle = 50%
R(t) (°C/W)
10
20%
10%
5%
2%
1
1%
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Response
100
50
45
ID, DRAIN CURRENT (A)
40
GFS (S)
35
30
25
20
15
10
TA = 25°C
TA = 85°C
10
5
1
1.0E−08
0
0
5
10 15 20 25 30 35 40 45 50 55 60 65 70
1.0E−07
1.0E−06
1.0E−05
1.0E−04 1.E−03
ID (A)
PULSE WIDTH (SECONDS)
Figure 14. GFS vs. ID
Figure 15. Avalanche Characteristics
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6
NTTFS4C13N
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511AB
ISSUE D
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH
PROTRUSIONS OR GATE BURRS.
0.20 C
D
A
B
D1
2X
0.20 C
8 7 6 5
4X
q
E1 E
c
1 2 3 4
A1
TOP VIEW
0.10 C
A
0.10 C
SIDE VIEW
0.10
8X b
C A B
0.05
C
4X
DETAIL A
6X
C
e
SEATING
PLANE
DETAIL A
8X
e/2
L
0.42
4
INCHES
NOM
0.030
−−−
0.012
0.008
0.130 BSC
0.116
0.120
0.078
0.083
0.130 BSC
0.116
0.120
0.058
0.063
0.009
0.012
0.026 BSC
0.012
0.016
0.026
0.032
0.012
0.017
0.002
0.005
0.055
0.059
0_
−−−
MIN
0.028
0.000
0.009
0.006
0.65
PITCH
PACKAGE
OUTLINE
K
MAX
0.031
0.002
0.016
0.010
0.124
0.088
0.124
0.068
0.016
0.020
0.037
0.022
0.008
0.063
12 _
4X
0.66
M
E3
8
G
MILLIMETERS
MIN
NOM
MAX
0.70
0.75
0.80
0.00
−−−
0.05
0.23
0.30
0.40
0.15
0.20
0.25
3.30 BSC
2.95
3.05
3.15
1.98
2.11
2.24
3.30 BSC
2.95
3.05
3.15
1.47
1.60
1.73
0.23
0.30
0.40
0.65 BSC
0.30
0.41
0.51
0.65
0.80
0.95
0.30
0.43
0.56
0.06
0.13
0.20
1.40
1.50
1.60
0_
−−−
12 _
SOLDERING FOOTPRINT*
1
E2
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
E3
e
G
K
L
L1
M
q
5
D2
BOTTOM VIEW
3.60
L1
0.75
2.30
0.57
0.47
2.37
3.46
DIMENSION: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
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particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
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NTTFS4C13N/D
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